TIP121TU_NL - FAIRCHILD SEMICONDUCTOR

May, 2006 − Rev. 5 1Publication Order Number:

T2800/D

T2800D

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as

light dimmers, motor controls, heating controls and power supplies.

Features

•Blocking Voltage to 400 V

•All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

•Four Quadrant Gating

•Pb−Free Package is Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to +125°C, Gate Open) VDRM,

VRRM 400 V

On−State RMS Current

(All Conduction Angles, TC = +80°C) IT(RMS) 8.0 A

Peak Non−Repetitive Surge Current (One

Full Cycle Sine Wave, 60 Hz, TJ = +80°C) ITSM 100 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s

Peak Gate Power

(Pulse Width = 10 ms, TC = +80°C) PGM 16 W

Average Gate Power

(t = 8.3 ms, TC = +80°C) PG(AV) 0.35 W

Peak Gate Current

(Pulse Width = 10 ms, TC = +80°C) IGM 4.0 A

Operating Junction Temperature Range TJ−40 to +125 °C

Storage Temperature Range Tstg −40 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TRIACS

8 AMPERES RMS, 400 VOLTS

Device Package Shipping

ORDERING INFORMATION

T2800D TO−220AB 500 Units/Box

TO−220AB

CASE 221A

STYLE 4

123

PIN ASSIGNMENT

3 Gate

Main Terminal 1

Main Terminal 2

4Main Terminal 2

MT1

MT2

T2800DG TO−220AB

(Pb−Free) 500 Units/Box

T2800DG

AYWW

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

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MARKING

DIAGRAM

T2800D

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THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction−to−Case RqJC 2.2 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Sec TL260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open) TC = 25°C

TC = 100°C

IDRM,

IRRM −

−−

−10

2.0 mA

ON CHARACTERISTICS

Peak On-State Voltage (Note 2)

(IT = "30 A Peak) VTM − 1.7 2.0 V

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 W)MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

MT2(−), G(+)

IGT

−

Gate Trigger Voltage (Continuous dc) (All Quadrants)

(VD = 12 Vdc, RL = 100 W)VGT − 1.25 2.5 V

Gate Non−Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 W, TC = 100°C) VGD 0.2 − − V

Holding Current

(VD = 12 Vdc, Initiating Current = "200 mA, Gate Open) IH− 15 30 mA

Gate Controlled Turn-On Time

(VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 ms) tgt − 1.6 − ms

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Commutation Voltage

(VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms,

Gate Unenergized, TC = 80°C)

dv/dt(c) − 10 − V/ms

Critical Rate-of-Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C) dv/dt 60 − − V/ms

2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 − VTM

VTM Maximum On State Voltage

IHHolding Current

T2800D

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MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(−) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(−) MT2

REF

MT1

(−) IGT

GATE

(−) MT2

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT −+ IGT

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

FULL CYCLE

SINUSOIDAL

WAVEFORM

024

100

TYPICAL

108642

MAXIMUM

IT(RMS), RMS ON-STATE CURRENT (AMP)

FULL CYCLE

SINUSOIDAL

WAVEFORM

IT(RMS), RMS ON-STATE CURRENT (AMP)

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

Figure 1. Current Derating Figure 2. Power Dissipation

T2800D

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PACKAGE DIMENSIONS

CASE 221A−07

ISSUE AA

TO−220

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.022 0.36 0.55

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 −−− 1.15 −−−

Z−−− 0.080 −−− 2.04

123

−T− SEATING

PLANE

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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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T2800/D

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