© Semiconductor Components Industries, LLC, 2001
March, 2020 − Rev. 5
1Publication Order Number:
ISL9R3060P2/D
STEALTHt Diode
30 A, 600 V
ISL9R3060G2, ISL9R3060P2
Description
The ISL9R3060G2, ISL9R3060P2 is a STEALTHt diode
optimized for low loss performance in high frequency hard switched
applications. The STEALTH family exhibits low reverse recovery
current (Irr) and exceptionally soft recovery under typical operating
conditions. This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching applications.
The low Irr and short ta phase reduce loss in switching transistors.
The soft recovery minimizes ringing, expanding the range
of conditions under which the diode may be operated without the use
of additional snubber circuitry. Consider using the STEALTH diode
with an SMPS IGBT to provide the most efficient and highest power
density design at lower cost.
Features
•Stealth Recovery, trr = 36 ns (@ IF = 30 A)
•Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
•600 V Reverse Voltage and High Reliability
•Avalanche Energy Rated
•This Device is Pb−Free and is RoHS Compliant
Applications
•SMPS
•Hard Switched PFC Boost Diode
•UPS Free Wheeling Diode
•Motor Drive FWD
•SMPS FWD
•Snubber Diode
www.onsemi.com
MARKING DIAGRAM
$Y&Z&3&K
R3060X2
K
A
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
ANODE
CATHODE
CATHODE
(BOTTOM
SIDE METAL)
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
R3060X2 = Specific Device Code
X =G/P
ANODE
CATHODE
CATHODE
(FLANGE)
JEDEC STYLE
2 LEAD TO−247−2L
JEDEC
TO−220AC−2L
ISL9R3060G2, ISL9R3060P2
www.onsemi.com
2
DEVICE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR600 V
Average Rectified Forward Current IF(AV) 30 A
Repetitive Peak Surge Current (20 kHz Square Wave ) IFRM 70 A
Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz) IFSM 325 A
Power Dissipation PD200 W
Avalanche Energy (1 A, 40 mH) EAVL 20 mJ
Operating and Storage Temperature Range TJ, TSTG −55 to 175 °C
Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s TL300 °C
Maximum Temperature for Soldering Package Body for 10 s TPKG 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package
Packing
Methode Reel Size Tape Width Quantity
R3060G2 ISL9R3060G2 TO−247−2L Tube N/A N/A 30
R3060G2 ISL9R3060P2 TO−220AC−2L Tube N/A N/A 50
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
OFF STATE CHARACTERISTICS
IRInstantaneous Reverse Current VR = 600 V TC = 25°C− − 100 mA
TC = 125°C− − 1 mA
ON CHARACTERISTICS
VFInstantaneous Forward Voltage IF = 30 A TC = 25°C−2.1 2.4 V
TC = 125°C−1.7 2.1 V
DYNAMIC CHARACTERISTICS
CJJunction Capacitance VR = 10 V, IF = 0 A −120 −pF
SWITCHING CHARACTERISTICS
Trr Reverse Recovery Time IF = 1 A, diF/dt = 100 A/ms, VR = 30 V −27 35 ns
IF = 30 A, diF/dt = 100 A/ms, VR = 30V −36 45 ns
Trr Reverse Recovery Time IF = 30 A
diF/dt = 200 A/ms
VR = 390 V
TC = 25°C
−36 −ns
IRR Reverse Recovery Current −2.9 −A
QRR Reverse Recovery Charge −55 −nC
Trr Reverse Recovery Time IF = 30 A
dIF/dt = 200 A/ms
VR = 390 V,
TC = 125°C
−110 −ns
SSoftness Factor (tb/ta)−1.9 − −
IRR Reverse Recovery Current −6−A
QRR Reverse Recovery Charge −450 −nC
ISL9R3060G2, ISL9R3060P2
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued)
Symbol UnitMax.Typ.Min.Test ConditionsParameter
SWITCHING CHARACTERISTICS
Trr Reverse Recovery Time IF = 30 A
dIF/dt = 1000 A/ms
VR = 390 V
TC = 125°C
−60 −ns
SSoftness Factor (tb/ta)−1.25 − −
IRR Reverse Recovery Current −21 −A
QRR Reverse Recovery Charge −730 −nC
dIM/dt Maximum di/dt during tb−800 −A/ms
THERMAL CHARACTERISTICS
RqJC Thermal Resistance Junction to Case − − 0.75 °C/W
RqJA Thermal Resistance Junction to Ambient TO−247 − − 30 °C/W
RqJA Thermal Resistance Junction to Ambient TO−220 − − 62 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ISL9R3060G2, ISL9R3060P2
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES
Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Figure 3. ta and tb Curves vs. Forward Current Figure 4. ta and tb Curves vs. diF/dt
IR, Reverse Current (mA)
VR, Reverse Voltage (V)
IF
, Forward Current (A)
VF
, Forward Voltage (V)
t, Recovery Times (ns)
diF/dt, Current Rate of Change (A/ms)
t, Recovery Times (ns)
IF
, Forward Current (A)
Figure 5. Maximum Reverse Recovery
Current vs. Forward Current
Figure 6. Maximum Reverse Recovery
Current vs. diF/dt
IRR, Max Reverse Recovery Current (A)
diF/dt, Current Rate of Change (A/ms)
IF
, Forward Current (A)
IRR, Max Reverse Recovery Current (A)
60
50
40
00 1.0 2.0 3.0
30
20
10
0.5 1.5 2.5
25oC
175oC
100oC
150oC
125oC
0
0
20
40
60
80
100
20 60
tb AT diF/dt = 200A/ms, 500A/ms, 800A/ms
VR = 390V, TJ = 1255C
10 30 40 50
ta AT diF/dt = 200A/ms, 500A/ms, 800A/ms
90
70
50
30
10
4
8
10
12
14
18
20
diF/dt = 800A/ms
diF/dt = 500A/ms
diF/dt = 200A/ms
VR = 390V, TJ = 1255C
020 6010 30 40 50
6
16
10
100
100 200 500 600400
1000
1
0.1
175oC
25oC
100oC
300
5000
75oC
150oC
125oC
0
20
40
60
80
120
VR = 390V, TJ = 1255C
tb AT IF = 60A, 30A, 15A
1000 16001400400200 600 800 1200
ta AT IF = 60A, 30A, 15A
100
0
5
10
15
20
25
1000 1600
VR = 390V, TJ = 1255CIF = 60A
IF = 15A
1400400200 600 800 1200
30
IF = 30A
ISL9R3060G2, ISL9R3060P2
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
Figure 7. Reverse Recovery Softness Factor vs. diF/dt Figure 8. Reverse Recovery Charge vs. diF/dt
Figure 9. Junction Capacitance vs. Reverse Voltage Figure 10. Forward Current Derating Curve
QRR, Reverse Recovery Charge (nC)
diF/dt, Current Rate of Change (A/ms)
S, Reverse Recovery Softness Factor
diF/dt, Current Rate of Change (A/ms)
IF(AV), Average Forward Current (A)
TC, Case Temperature (5C)
CJ, Junction Capacitance (pF)
VR, Reverse Voltage (V)
Figure 11. Normalized Maximum Transient Thermal Impedance
t, Rectangular Pulse Duration (s)
ZqJA, Normalized Thermal Impedance
10−510−210−1
0.01
10−410−3
SINGLE PULSE
100
0.1
101
DUTY CYCLE − DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
PDM
t1
t2
1.0
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZqJA x RqJA+ TA
0.5
1.0
1.5
2.0
2.5
VR = 390V, TJ = 1255C
IF = 60A
IF = 30A
IF = 15A
1000 16001400400200 600 800 1200
400
0
800
600
200
1000
0.1 1 10010 25 50 75 100 125 150 175
0
15
30
45
60
75
90
200
400
600
800
1000
1200
VR = 390V, TJ = 1255CIF = 60A
IF = 30A
IF = 15A
1000 16001400400200 600 800 1200
ISL9R3060G2, ISL9R3060P2
www.onsemi.com
6
TEST CIRCUITS AND WAVEFORMS
Figure 12. Trr Test Circuit Figure 13. Trr Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage Waveforms
I = 1 A
L = 40 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
IRM
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
GE
t1
t2
+
−
dt
dIF
IF
Trr
tatb
0
0.25IRM
DUT
CURRENT
SENSE
+
LR
VDD
−
VDD
Q1I
t0t1t2
IL
VAVL
t
IL
VGE AMPLITUDE AND
RG CONTROL dlF/dt
t1 AND t2 CONTROL IF
V
V
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
TO−220−2LD
CASE 340BA
ISSUE O
DATE 31 AUG 2016
5°
3°
5°
3°
4.672
4.472
10.360
10.109
4.036
3.636
2.860
2.660
8.787
8.587
15.215
14.757
2.640
2.440
1.65
1.25
0.889
0.787
5.180
4.980
1.91
13.894
12.941
0.60 MAX
0.36MB A
0.36MCAB
A
B1.400
1.146
7°
3°
6.477
6.121
2.755
2.555
0.457
0.357
5°
3°
5°
3°
C
8.89
6.86
3.962
3.720
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220
VARIATION AC.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
12
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13831G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−220−2LD
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13850G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−247−2LD
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
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