STEALTHt Diode 30 A, 600 V ISL9R3060G2, ISL9R3060P2 Description The ISL9R3060G2, ISL9R3060P2 is a STEALTH t diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. www.onsemi.com JEDEC STYLE 2 LEAD TO-247-2L ANODE CATHODE CATHODE (BOTTOM SIDE METAL) JEDEC TO-220AC-2L CATHODE (FLANGE) Features * * * * * Stealth Recovery, trr = 36 ns (@ IF = 30 A) Max Forward Voltage, VF = 2.4 V (@ TC = 25C) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is Pb-Free and is RoHS Compliant CATHODE ANODE MARKING DIAGRAM Applications * * * * * * SMPS Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode $Y&Z&3&K R3060X2 $Y &Z &3 &K R3060X2 X = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code =G/P K A ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2001 March, 2020 - Rev. 5 1 Publication Order Number: ISL9R3060P2/D ISL9R3060G2, ISL9R3060P2 DEVICE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current IF(AV) 30 A Repetitive Peak Surge Current (20 kHz Square Wave ) IFRM 70 A Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz) IFSM 325 A DC Blocking Voltage Power Dissipation Avalanche Energy (1 A, 40 mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s Maximum Temperature for Soldering Package Body for 10 s PD 200 W EAVL 20 mJ TJ, TSTG -55 to 175 C TL 300 C TPKG 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Methode Reel Size Tape Width Quantity R3060G2 ISL9R3060G2 TO-247-2L Tube N/A N/A 30 R3060G2 ISL9R3060P2 TO-220AC-2L Tube N/A N/A 50 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit TC = 25C - - 100 mA TC = 125C - - 1 mA TC = 25C - 2.1 2.4 V TC = 125C - 1.7 2.1 V VR = 10 V, IF = 0 A - 120 - pF IF = 1 A, diF/dt = 100 A/ms, VR = 30 V - 27 35 ns IF = 30 A, diF/dt = 100 A/ms, VR = 30V - 36 45 ns IF = 30 A diF/dt = 200 A/ms VR = 390 V TC = 25C - 36 - ns - 2.9 - A - 55 - nC IF = 30 A dIF/dt = 200 A/ms VR = 390 V, TC = 125C - 110 - ns - 1.9 - - - 6 - A - 450 - nC OFF STATE CHARACTERISTICS IR Instantaneous Reverse Current VR = 600 V ON CHARACTERISTICS VF Instantaneous Forward Voltage IF = 30 A DYNAMIC CHARACTERISTICS CJ Junction Capacitance SWITCHING CHARACTERISTICS Trr Reverse Recovery Time Trr Reverse Recovery Time IRR Reverse Recovery Current QRR Reverse Recovery Charge Trr Reverse Recovery Time S Softness Factor (tb/ta) IRR Reverse Recovery Current QRR Reverse Recovery Charge www.onsemi.com 2 ISL9R3060G2, ISL9R3060P2 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit - 60 - ns - 1.25 - - SWITCHING CHARACTERISTICS Trr Reverse Recovery Time S Softness Factor (tb/ta) IF = 30 A dIF/dt = 1000 A/ms VR = 390 V TC = 125C IRR Reverse Recovery Current - 21 - A QRR Reverse Recovery Charge - 730 - nC Maximum di/dt during tb - 800 - A/ms dIM/dt THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case - - 0.75 C/W RqJA Thermal Resistance Junction to Ambient TO-247 - - 30 C/W RqJA Thermal Resistance Junction to Ambient TO-220 - - 62 C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 ISL9R3060G2, ISL9R3060P2 TYPICAL PERFORMANCE CURVES 60 5000 175oC o 50 IR, Reverse Current (mA) IF, Forward Current (A) 175 C 25oC 150oC 40 125oC 30 20 100oC 1000 150oC 125oC 100 100oC 75oC 10 1 25oC 10 0 0 0.5 1.0 1.5 2.5 2.0 0.1 100 3.0 VF, Forward Voltage (V) VR = 390V, TJ = 1255C t, Recovery Times (ns) 80 70 60 50 40 30 20 100 tb AT IF = 60A, 30A, 15A 80 60 40 20 ta AT diF/dt = 200A/ms, 500A/ms, 800A/ms 0 10 20 30 40 50 ta AT IF = 60A, 30A, 15A 0 200 60 400 600 800 1000 1200 1400 IF, Forward Current (A) diF/dt, Current Rate of Change (A/ms) Figure 3. ta and tb Curves vs. Forward Current Figure 4. ta and tb Curves vs. diF/dt 20 VR = 390V, TJ = 1255C IRR, Max Reverse Recovery Current (A) t, Recovery Times (ns) 600 120 VR = 390V, TJ = 1255C 10 IRR, Max Reverse Recovery Current (A) 500 Figure 2. Reverse Current vs. Reverse Voltage 90 tb AT diF/dt = 200A/ms, 500A/ms, 800A/ms 0 400 VR, Reverse Voltage (V) Figure 1. Forward Current vs. Forward Voltage 100 300 200 diF/dt = 800A/ms 18 16 14 diF/dt = 500A/ms 12 10 8 diF/dt = 200A/ms 6 4 0 10 20 30 40 50 60 IF, Forward Current (A) 30 IF = 60A VR = 390V, TJ = 1255C 25 IF = 30A IF = 15A 20 15 10 5 0 200 400 600 800 1000 1200 1400 diF/dt, Current Rate of Change (A/ms) Figure 5. Maximum Reverse Recovery Current vs. Forward Current Figure 6. Maximum Reverse Recovery Current vs. diF/dt www.onsemi.com 4 1600 1600 ISL9R3060G2, ISL9R3060P2 2.5 1200 VR = 390V, TJ = 1255C IF = 60A QRR, Reverse Recovery Charge (nC) S, Reverse Recovery Softness Factor TYPICAL PERFORMANCE CURVES IF = 30A 2.0 1.5 IF = 15A 1.0 0.5 200 400 600 800 1000 1200 1400 1600 VR = 390V, TJ = 1255C 1000 IF = 30A 800 600 IF = 15A 400 200 200 400 diF/dt, Current Rate of Change (A/ms) 1000 1200 1400 90 IF(AV), Average Forward Current (A) 800 600 400 200 0.1 1 10 100 75 60 45 30 15 0 25 50 VR, Reverse Voltage (V) 1.0 75 100 125 150 Figure 10. Forward Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x RqJA+ TA SINGLE PULSE 0.01 10-5 10-4 175 TC, Case Temperature (5C) Figure 9. Junction Capacitance vs. Reverse Voltage ZqJA, Normalized Thermal Impedance 800 10-3 1600 Figure 8. Reverse Recovery Charge vs. diF/dt 1000 CJ, Junction Capacitance (pF) 600 diF/dt, Current Rate of Change (A/ms) Figure 7. Reverse Recovery Softness Factor vs. diF/dt 0 IF = 60A 10-2 10-1 100 t, Rectangular Pulse Duration (s) Figure 11. Normalized Maximum Transient Thermal Impedance www.onsemi.com 5 101 ISL9R3060G2, ISL9R3060P2 TEST CIRCUITS AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dlF/dt t1 AND t2 CONTROL IF L DUT RG CURRENT SENSE VGE dIF Trr dt ta 0 VDD - MOSFET t1 IF + tb 0.25I RM IRM t2 Figure 12. Trr Test Circuit I=1A L = 40 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)-VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Figure 13. Trr Waveforms and Definitions VAVL R CURRENT SENSE + VDD DUT - IL IL I V Q1 VDD t0 Figure 14. Avalanche Energy Test Circuit t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220-2LD CASE 340BA ISSUE O 4.036 3.636 0.36 M B A 10.360 10.109 A B 2.860 2.660 13.894 12.941 1.91 6.477 6.121 8.89 6.86 7 3 8.787 8.587 1 C 1.400 1.146 3 15.215 14.757 DATE 31 AUG 2016 2 5 3 0.60 MAX 1.65 1.25 0.889 0.787 0.36 M C A B 2.640 2.440 5 3 2.755 2.555 3.962 3.720 0.457 0.357 5.180 4.980 5 3 5 3 4.672 4.472 DOCUMENT NUMBER: DESCRIPTION: 98AON13831G TO-220-2LD NOTES: A. PACKAGE REFERENCE: JEDEC TO220 VARIATION AC. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO-247-2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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