IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
1. Product profile
1.1 General description
Passivated thyristors in a SOT428 plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
BT151S series L and R
Thyristors
Rev. 05 — 9 October 2006 Product data sheet
nHigh thermal cycling performance nSurface-mounted package
nHigh bidirectional blocking voltage
capability
nMotor control nStatic switching
nIgnition circuits nProtection circuits
nVDRM ≤500 V (BT151S-500L/R) nITSM ≤120 A (t = 10 ms)
nVRRM ≤500 V (BT151S-500L/R) nIT(RMS) ≤12 A
nVDRM ≤650 V (BT151S-650L/R) nIT(AV) ≤7.5 A
nVRRM ≤650 V (BT151S-650L/R) nIGT ≤5 mA (BT151S series L)
nVDRM ≤800 V (BT151S-800R) nIGT ≤15 mA (BT151S series R)
nVRRM ≤800 V (BT151S-800R)
Table 1. Pinning
Pin Description Simplified outline Symbol
1 cathode (K)
SOT428 (DPAK)
2 anode (A)
3 gate (G)
mb mounting base; connected to anode
3
2
mb
1
sym037
AK
G
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 2 of 13
NXP Semiconductors BT151S series L and R
Thyristors
3. Ordering information
4. Limiting values
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15A/µs.
Table 2. Ordering information
Type number Package
Name Description Version
BT151S-500L DPAK plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage BT151S-500L; BT151S-500R [1] - 500 V
BT151S-650L; BT151S-650R [1] - 650 V
BT151S-800R - 800 V
VRRM repetitive peak reverse voltage BT151S-500L; BT151S-500R [1] - 500 V
BT151S-650L; BT151S-650R [1] - 650 V
BT151S-800R - 800 V
IT(AV) average on-state current half sine wave; Tmb ≤103 °C;
see Figure 1 - 7.5 A
IT(RMS) RMS on-state current all conduction angles; see Figure 4
and 5-12 A
ITSM non-repetitive peak on-state
current half sine wave; Tj=25°C prior to
surge; see Figure 2 and 3
t=10ms - 120 A
t = 8.3 ms - 132 A
I2tI
2t for fusing t = 10 ms - 72 A2s
dIT/dt rate of rise of on-state current ITM = 20 A; IG=50mA;
dIG/dt = 50 mA/µs-50 A/µs
IGM peak gate current - 2 A
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature −40 +150 °C
Tjjunction temperature - 125 °C
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 3 of 13
NXP Semiconductors BT151S series L and R
Thyristors
Form factor a = IT(RMS)/IT(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
IT(AV) (A)
0 8642
001aab019
5
10
15
Ptot
(W)
0
116
107
98
Tmb(max)
(°C)
125
a =
1.57
4
2.8
2.2 1.9
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
001aaa957
80
40
120
160
ITSM
(A)
0
n
1 103
102
10
tp
Tj initial = 25 °C max
ITITSM
t
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 4 of 13
NXP Semiconductors BT151S series L and R
Thyristors
tp≤10 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
f = 50 Hz; Tmb ≤103 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
001aaa956
tp (s)
10−510−2
10−3
10−4
102
103
ITSM
(A)
10
dlT/dt limit
tp
Tj initial = 25 °C max
ITITSM
t
surge duration (s)
10−210110−1
001aaa954
10
15
5
20
25
IT(RMS)
(A)
0
Tmb (°C)
−50 150100050
001aaa998
8
4
12
16
IT(RMS)
(A)
0
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 5 of 13
NXP Semiconductors BT151S series L and R
Thyristors
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to
mounting base see Figure 6 - - 1.8 K/W
Rth(j-a) thermal resistance from junction to
ambient mounted on an FR4
printed-circuit board; see
Figure 14
- 75 - K/W
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
001aaa963
10−1
10−2
1
10
Zth(j-mb)
(K/W)
10−3
tp (s)
10−511010−1
10−2
10−410−3
tp
tp
T
P
t
T
δ =
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 6 of 13
NXP Semiconductors BT151S series L and R
Thyristors
6. Characteristics
Table 5. Characteristics
T
j
= 25
°
C unless otherwise stated.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD= 12 V; IT= 100 mA; see Figure 8
BT151S-500L - 2 5 mA
BT151S-500R - 2 15 mA
BT151S-650L - 2 5 mA
BT151S-650R - 2 15 mA
BT151S-800R - 2 15 mA
ILlatching current VD= 12 V; IGT = 100 mA; see
Figure 10 - 1040mA
IHholding current VD= 12 V; IGT = 100 mA; see
Figure 11 - 7 20 mA
VTon-state voltage IT= 23 A; see Figure 9 - 1.4 1.75 V
VGT gate trigger voltage IT= 100 mA; VD= 12 V; see Figure 7 - 0.6 1.5 V
IT= 100 mA; VD=V
DRM(max);
Tj= 125 °C0.25 0.4 - V
IDoff-state current VD=V
DRM(max); Tj= 125 °C - 0.1 0.5 mA
IRreverse current VR=V
RRM(max); Tj= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage VDM = 0.67 × VDRM(max); Tj= 125 °C;
exponential waveform; see Figure 12
RGK = 100 Ω200 1000 - V/µs
gate open circuit 50 130 - V/µs
tgt gate-controlled turn-on
time ITM = 40 A; VD=V
DRM(max);
IG= 100 mA; dIG/dt = 5 A/µs-2-µs
tqcommutated turn-off
time VDM = 0.67 × VDRM(max); Tj= 125 °C;
ITM = 20 A; VR=25V;
(dIT/dt)M=30A/µs; dVD/dt = 50 V/µs;
RGK = 100 Ω
-70-µs
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 7 of 13
NXP Semiconductors BT151S series L and R
Thyristors
Fig 7. Normalized gate trigger voltage as a function of
junction temperature Fig 8. Normalized gate trigger current as a function of
junction temperature
Vo= 1.06 V
Rs= 0.0304 Ω
(1) Tj= 125 °C; typical values
(2) Tj= 125 °C; maximum values
(3) Tj=25°C; maximum values
Fig 9. On-state current as a function of on-state
voltage Fig 10. Normalized latching current as a function of
junction temperature
Tj (°C)
−50 150100050
001aaa953
0.8
1.2
1.6
0.4
VGT
VGT(25°C)
Tj (°C)
−50 150100050
001aaa952
1
2
3
0
IGT
IGT(25°C)
VT (V)
021.50.5 1
001aaa959
10
20
30
IT
(A)
0
(3)(2)(1)
Tj (°C)
−50 150100050
001aaa951
1
2
3
0
IL
IL(25°C)
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 8 of 13
NXP Semiconductors BT151S series L and R
Thyristors
(1) RGK = 100 Ω
(2) Gate open circuit
Fig 11. Normalized holding current as a function of
junction temperature Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values
Tj (°C)
−50 150100050
001aaa950
1
2
3
IH
IH(25°C)
0
001aaa949
103
102
104
dVD/dt
(V/µs)
10
Tj (°C)
0 15010050
(2)
(1)
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 9 of 13
NXP Semiconductors BT151S series L and R
Thyristors
7. Package outline
Fig 13. Package outline SOT428 (DPAK)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT428 SC-63
TO-252
SOT428
06-02-14
06-03-16
DIMENSIONS (mm are the original dimensions)
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
A
2
13
E1
D2
D1HD
LL1
L2
e1
e
mounting
base
wA
M
b
E
b2
b1c
A1
y
0 5 10 mm
scale
UNIT
mm 0.93
0.46 5.46
5.00 0.56
0.20 6.22
5.98 6.73
6.47 10.4
9.6 2.95
2.55
A1
2.38
2.22
Ab
2
1.1
0.9
b1e1
0.89
0.71
bcD
1
0.9
0.5
L2
Ee
2.285 4.57
4.0
D2
min
4.45
E1
min
0.5
L1
min
HDLw
0.2
y
max
0.2
A
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 10 of 13
NXP Semiconductors BT151S series L and R
Thyristors
8. Mounting
Plastic meets requirements of UL94 V-O at 3.175 mm
Fig 14. SOT428: minimum pad size for surface-mounting
001aab021
7.0
7.0
4.57
2.5
2.15 1.5
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 11 of 13
NXP Semiconductors BT151S series L and R
Thyristors
9. Revision history
Table 6. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BT151S_SER_L_R_5 20061009 Product data sheet - BT151S_SERIES_4
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Added type numbers BT151S-500L and BT151S-650L
BT151S_SERIES_4
(9397 750 13161) 20040609 Product specification - BT151S_SERIES_3
BT151S_SERIES_3 20020101 Product specification - BT151S_SERIES_2
BT151S_SERIES_2 19990601 Product specification - BT151S_SERIES_1
BT151S_SERIES_1 19970901 Product specification - -
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 12 of 13
NXP Semiconductors BT151S series L and R
Thyristors
10. Legal information
10.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BT151S series L and R
Thyristors
© NXP B.V. 2006. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 October 2006
Document identifier: BT151S_SER_L_R_5
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
12. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Contact information. . . . . . . . . . . . . . . . . . . . . 12
12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
