2N6987 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N6989 * General purpose switching * 4 Transistor Array * PNP silicon transistor Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N6987J) * JANTX level (2N6987JX) * JANTXV level (2N6987JV) * JANS level (2N6987JS) * QCI to the applicable level Features * 100% die visual inspection per MIL-STD-750 method * * * * 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Hermetically sealed Cerdip ceramic Also available in chip configuration Chip geometry 0600 Reference document: MIL-PRF-19500/558 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 60 Collector-Base Voltage VCBO 60 Unit Volts Volts Emitter-Base Voltage VEBO 5 Volts IC 600 mA Power Dissipation, TA = 25 C Derate linearly above 25OC PT 1.5 8.57 Operating Junction Temperature TJ -65 to +200 W mW/C C TSTG -65 to +200 C Collector Current, Continuous O Storage Temperature Copyright 2010 Rev. D Semicoa Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N6987 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions IC = 10 mA Min Typ Max Units Volts 60 Collector-Base Cutoff Current ICBO1 ICBO2 VCB = 60 Volts VCB = 50 Volts 10 10 Collector-Base Cutoff Current ICBO3 VCB = 50 Volts, TA = 150C 10 A nA A Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 5 Volts VEB = 4 Volts 10 50 A nA On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts TA = -55C IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Min 75 100 100 100 50 50 Test Conditions VCE = 20 Volts, IC = 20 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 2 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min |VT-T| = 500 Volts 1010 Typ Max Units 450 300 1.3 2.6 0.4 1.6 Volts Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Transistor to Transistor Resistance |RT-T| Typ Max Units 8 pF 30 pF 2 100 Switching Characteristics Saturated Turn-On Time tON 45 ns Saturated Turn-Off Time tOFF 300 ns Copyright 2010 Rev. D Semicoa Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2