PD- 95143 IRF840ASPbF IRF840ALPbF SMPS MOSFET HEXFET(R) Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free l Benefits l Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) VDSS RDS(on) max ID 0.85 8.0A 500V D2Pak IRF840AS TO-262 IRF840AL Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C VGS dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 8.0 5.1 32 125 3.1 1.0 30 5.0 -55 to + 150 Units A W W/C V V/ns C 300 (1.6mm from case ) Typical SMPS Topologies l l l Two Transistor Forward Haft Bridge Full Bridge Notes through are on page 10 www.irf.com 1 04/21/04 IRF840AS/LPbF Static @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage V(BR)DSS V(BR)DSS/TJ Min. 500 --- --- 2.0 --- --- --- --- Typ. --- 0.58 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.85 VGS = 10V, ID = 4.8A 4.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 3.7 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 11 23 26 19 1018 155 8.0 1490 42 56 Max. Units Conditions --- S VDS = 50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 510 8.0 13 mJ A mJ Typ. Max. Units --- --- 1.0 40 C/W Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted, steady-state)* Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 8.0 showing the A G integral reverse --- --- 32 S p-n junction diode. --- --- 2.0 V TJ = 25C, IS = 8.0A, VGS = 0V --- 422 633 ns TJ = 25C, IF = 8.0A --- 2.0 3.0 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF840AS/LPbF 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 1 4.5V 20s PULSE WIDTH T = 25 C 1 10 4.5V 1 10 3.0 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 C 7.0 10 100 Fig 2. Typical Output Characteristics 100 6.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5.0 J 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) 0.1 4.0 20s PULSE WIDTH T = 150 C J 0.1 0.1 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 8.0 ID = 7.4A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF840AS/LPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 10000 Coss = Cds + Cgd Ciss 1000 Coss 100 10 Crss 20 VGS , Gate-to-Source Voltage (V) 100000 16 10 100 VDS = 400V VDS = 250V VDS = 100V 12 8 4 1 1 8.0 A ID = 7.4 0 1000 FOR TEST CIRCUIT SEE FIGURE 13 0 10 20 30 40 Q G , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R ISD , Reverse Drain Current (A) DS(on) 10us TJ = 150 C TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 I D , Drain Current (A) 10 1.4 10 100us 1ms 1 0.1 10ms TC = 25 C TJ = 150 C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF840AS/LPbF 8.0 VGS I D , Drain Current (A) RD VDS D.U.T. 6.0 RG 4.0 Pulse Width 1 s Duty Factor 0.1 % + -VDD 10V Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 TC , Case Temperature 125 150 ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.1 P DM 0.10 t1 0.05 0.02 0.01 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) www.irf.com 5 IRF840AS/LPbF 20V + V - DD IA S 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) D .U .T RG A ID 3.6A 5.1A 8.0A TOP 1000 D R IV E R L VDS 1200 1 5V BOTTOM 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 610 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS V DSav , Avalanche Voltage ( V ) VG 600 590 580 570 560 550 540 VGS 0.0 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 1.0 2.0 3.0 4.0 5.0 6.0 IAV , Avalanche Current ( A) 3mA Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www.irf.com IRF840AS/LPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF840AS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 30 S WIT H L OT CODE 80 24 AS S E MB L E D ON WW 0 2, 2 000 IN T H E AS S E MB L Y L IN E "L " IN T E R N AT ION AL R E CT IF IE R L OGO N ote: "P " in as s embly line pos ition indicates "L ead-F ree" P AR T NU MB E R F 53 0S AS S E MB L Y L OT CODE D AT E CODE YE AR 0 = 20 00 WE E K 02 L IN E L OR INT E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT CODE 8 P AR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OP T IONAL ) YE AR 0 = 20 00 WE E K 02 A = AS S E MB L Y S IT E CODE www.irf.com IRF840AS/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMP L E : T H IS IS AN IR L 3103L L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C OR IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE www.irf.com P AR T NU MB E R DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OP T IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE 9 IRF840AS/LPbF D2Pak Tape & Reel InforTRR 1 .6 0 (.06 3 ) 1 .5 0 (.05 9 ) 4 .10 (.1 6 1) 3 .90 (.1 5 3) F E E D D IR E C T I O N 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 .8 5 (.07 3 ) 1 .6 5 (.06 5 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 ( .9 5 7 ) 2 3 .9 0 ( .9 4 1 ) TRL 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 0 . 9 0 (.4 2 9 ) 1 0 . 7 0 (.4 2 1 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) F E E D D I R E C T IO N 1 3 .5 0 (.5 3 2) 1 2 .8 0 (.5 0 4) 2 7 .40 (1 .0 79 ) 2 3 .90 (.9 4 1) 4 330.00 (14.173) M A X. 6 0 .00 (2 .3 6 2) M IN . N OT ES : 1 . C O M F O R M S T O E IA -4 1 8. 2 . C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E . 3 0.4 0 (1 .1 97 ) M AX. 26.40 (1.039) 24.40 (.961) 4 3 Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. Starting TJ = 25C, L = 16mH Coss eff. is a fixed capacitance that gives the same charging time ISD 8.0A, di/dt 100A/s, VDD V(BR)DSS, Uses IRF840A data and test conditions max. junction temperature. (See fig. 11) RG = 25, IAS = 8.0A. (See Figure 12) as Coss while VDS is rising from 0 to 80% VDSS TJ 150C * When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. 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