PD - 95485A IRF1407PbF Typical Applications HEXFET(R) Power MOSFET l Industrial Motor Drive D Benefits l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 75V RDS(on) = 0.0078 G ID = 130A S Description This Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max. Units 130 92 520 330 2.2 20 390 See Fig.12a, 12b, 15, 16 4.6 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.50 --- 0.45 --- 62 C/W 1 07/14/10 IRF1407PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 75 --- --- 2.0 74 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.09 --- --- --- --- --- --- --- 160 35 54 11 150 150 140 Max. --- --- 0.0078 4.0 --- 20 250 200 -200 250 52 81 --- --- --- --- IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 5600 890 190 5800 560 1100 --- --- --- --- --- --- V(BR)DSS V(BR)DSS/TJ IGSS Units V V/C V S A nA nC ns nH pF Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 78A VDS = 10V, ID = 250A VDS = 25V, ID = 78A VDS = 75V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 150C VGS = 20V VGS = -20V ID = 78A VDS = 60V VGS = 10V VDD = 38V ID = 78A RG = 2.5 VGS = 10V D Between lead, 6mm (0.25in.) G from package and center of die contact S VGS = 0V VDS = 25V = 1.0KHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0KHz VGS = 0V, VDS = 60V, = 1.0KHz VGS = 0V, VDS = 0V to 60V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 130 showing the A G integral reverse --- --- 520 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 78A, VGS = 0V --- 110 170 ns TJ = 25C, IF = 78A --- 390 590 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.13mH RG = 25, IAS = 78A. (See Figure 12). ISD 78A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. 2 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. www.irf.com IRF1407PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 4.5V 10 20s PULSE WIDTH Tj = 25C 1 100 4.5V 10 20s PULSE WIDTH Tj = 175C 1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3.0 5.0 7.0 9.0 11.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 13.0 2.0 (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current () VDS = 15V 20s PULSE WIDTH 3.0 I D = 130A 2.5 TJ = 175C 100.00 10.00 100 Fig 2. Typical Output Characteristics 1000.00 T J = 25C 10 VDS, Drain-to-Source Voltage (V) 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ, Junction Temperature 100 120 140 160 180 ( C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF1407PbF 100000 15 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) Ciss Coss 1000 Crss 100 VDS = 37V VDS = 15V 9 6 3 0 1 10 0 100 1000.00 120 160 200 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 80 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100.00 40 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) T J = 175C OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100 10.00 T J = 25C 1.00 100sec 10 1msec Tc = 25C Tj = 175C Single Pulse VGS = 0V 1 0.10 0.0 1.0 2.0 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 60V 12 Coss = Cds + Cgd 10000 ID = 78A 3.0 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1407PbF 140 120 VGS D.U.T. RG 100 I D , Drain Current (A) RD VDS LIMITED BY PACKAGE 80 + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 60 Fig 10a. Switching Time Test Circuit 40 VDS 20 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC) 1 D = 0.50 0.1 0.20 Thermal Response 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1 / t 2 J = P DM x Z thJC +TC 0.1 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1407PbF 650 15V ID TOP + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG 520 DRIVER L VDS 32A 55A 78A BOTTOM 390 260 130 0 25 50 75 100 125 150 I AS 175 ( C) Starting T , Junction Temperature J Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 3.5 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 10 V 3.0 ID = 250A 2.5 2.0 1.5 VGS -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage vs. Temperature www.irf.com IRF1407PbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 100 0.05 0.10 10 1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 78A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = t av *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF1407PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test V GS * + - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices 8 Fig 17. For N-channel HEXFET(R) power MOSFETs www.irf.com IRF1407PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASS EMBLED ON WW 19, 2000 IN T HE ASS EMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" INT ERNAT IONAL RECT IF IER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C TO-220 package is not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2010 www.irf.com 9