2N4856A/4857A/4858A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) IDSS Min (mA) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N4856A -4 to -10 -40 50 25 5 4 2N4857A -2 to -6 -40 20 40 5 4 2N4858A -0.8 to -4 -40 8 60 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 2N4856A <25 W D Fast Switching--tON: 4 ns D High Off-Isolation--I D(off): 5 pA D Low Capacitance: 3 pF D Low Insertion Loss D D D D D D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters DESCRIPTION The 2N4856A/4857A/4858A all-purpose JFET analog switches offer low on-resistance, low capacitance, good isolation, and fast switching. Hermetically-sealed TO-206AA (TO-18) packaging allows full military processing (see Military Information). For similar products in TO-226AA (TO-92) and SOT-23 packages, see the J/SST111 series data sheet. For similar duals, see the 2N5564/5565/5566 data sheet. TO-206AA (TO-18) S 1 2 3 D G and Case Top View Document Number: 70243 S-04028--Rev. D, 04-Jun-01 www.vishay.com 7-1 2N4856A/4857A/4858A Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage : (2N4856A-58A) . . . . . . . . . . . . . . . -40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 200_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8 W Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . . . . . 300 _C Notes Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C a. Derate 10 mW/_C for TC > 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4856A Parameter Symbol Test Conditions Typa Min V(BR)GSS IG = -1 mA , VDS = 0 V -55 -40 VGS(off) VDS = 15 V, ID = 0.5 nA Max 2N4857A Min 2N4858A Max Min Max Unit Static Gate-Source Breakdown Voltage Saturation Drain Currentb IDSS Gate Reverse Current IGSS Currentc Drain Cutoff Current IG TA = 150_C -10 50 -2 20 -6 -0.8 100 8 -4 80 mA -5 -250 -250 -250 pA -13 -500 -500 -500 nA VDG = 15 V, ID = 10 mA -5 VDS = 15 V, VGS = -10 V 5 250 250 250 TA = 150_C 13 500 500 500 ID = 5 mA 0.25 ID = 10 mA 0.35 ID = 20 mA 0.5 ID(off) Drain-Source On-Voltage VDS(on) Drain-Source On-Resistancec rDS(on) VGS = 0 V, ID = 1 mA VGS(F) IG = 1 mA , VDS = 0 V Voltagec -4 VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V Gate-Source Forward -40 V Gate-Source Cutoff Voltage Gate Operating -40 VGS = 0 V pA nA 0.5 0.5 V 0.75 25 40 60 W 0.7 V 6 mS 25 mS Dynamic Common-Source Forward Transconductancec gfs Common-Source Output Conductancec gos Drain-Source On-Resistance rds(on) Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en VDS = 20 V, ID = 1 mA f = 1 kHz VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 0 V, VGS = -10 V f = 1 MHz VDS = 10 V, ID = 10 mA f = 1 kHz 25 40 60 7 10 10 10 3 4 3.5 3.5 W pF nV Hz 3 Switching td(on) Turn-On Time Turn-Off Time tr VDD = 10 V, VGSH = 0 V See Switching Circuit tOFF Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v100 ms duty cycle v10%. c. This parameter not registered with JEDEC. www.vishay.com 7-2 2 5 6 8 2 3 4 8 12 20 40 80 ns NCB Document Number: 70243 S-04028--Rev. D, 04-Jun-01 2N4856A/4857A/4858A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 80 160 IDSS rDS 60 120 40 80 20 40 0 rDS(on) - Drain-Source On-Resistance ( ) rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 20 V, VGS = 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) TA = 25_C 80 VGS(off) = -2 V 60 40 -4 V -8 V 20 0 0 0 On-Resistance vs. Drain Current 100 200 IDSS - Saturation Drain Current (mA) rDS(on) - Drain-Source On-Resistance ( ) 100 -10 1 10 ID - Drain Current (mA) Turn-On Switching On-Resistance vs. Temperature 5 ID = 1 mA rDS changes X 0.7%/_C 160 tr approximately independent of ID VDG = 5 V, RG = 50 W VGS(L) = -10 V 4 Switching Time (ns) rDS(on) - Drain-Source On-Resistance ( ) 200 120 VGS(off) = -2 V 80 -4 V 40 tr 3 td(on) @ ID = 12 mA 2 td(on) @ ID = 3 mA 1 -8 V 0 0 -55 -35 -15 5 25 45 65 85 105 0 125 -2 -4 -6 -10 -8 VGS(off) - Gate-Source Cutoff Voltage (V) TA - Temperature (_C) Capacitance vs. Gate-Source Voltage Turn-Off Switching 30 30 td(off) independent of device VGS(off) VDG = 5 V, VGS(L) = -10 V f = 1 MHz 24 18 Capacitance (pF) 24 Switching Time (ns) 100 VGS(off) = -2 V tf 12 18 12 td(off) Ciss @ VDS = 0 V 6 6 Crss @ VDS = 0 V VGS(off) = -8 V 0 0 0 2 4 6 ID - Drain Current (mA) Document Number: 70243 S-04028--Rev. D, 04-Jun-01 8 10 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) www.vishay.com 7-3 2N4856A/4857A/4858A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage Noise Voltage vs. Frequency 100 50 gfs - Forward Transconductance (mS) Hz en - Noise Voltage nV / ID = 1 mA ID = 10 mA 1 400 gos gfs 30 300 20 200 10 100 0 10 100 1k f - Frequency (Hz) 10 k 0 0 100 k VDG = 10 V ID = 10 mA TA = 25_C ID = 10 mA TA = 125_C 10 mA gig big (mS) 1 mA 10 pA -10 10 1 mA 100 pA -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) 100 IGSS @ 25_C 1 nA -2 Common-Gate Input Admittance Gate Leakage Current 10 nA IG - Gate Leakage 40 gos - Output Conductance (S) 10 500 gfs and gos @ VDS = 20 V VGS = 0 V, f = kHz VDG = 10 V IGSS @ 25_C 1 TA = 25_C 1 pA IG(on) @ ID 0.1 pA 0.1 6 0 12 18 24 100 30 200 VDG - Drain-Gate Voltage (V) 500 1000 f - Frequency (MHz) Common-Gate Forward Admittance Common-Gate Reverse Admittance 100 10 VDG = 10 V ID = 10 mA TA = 25_C VDG = 10 V ID = 10 mA TA = 25_C -gfg bfg -brg 1 10 (mS) (mS) gfg +grg -grg 0.1 1 0.01 0.1 100 www.vishay.com 7-4 200 500 f - Frequency (MHz) 1000 100 200 500 f - Frequency (MHz) 1000 Document Number: 70243 S-04028--Rev. D, 04-Jun-01 2N4856A/4857A/4858A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Gate Output Admittance Output Characteristics 20 100 VDG = 10 V ID = 10 mA TA = 25_C VGS(off) = -2 V 16 ID - Drain Current (mA) bog (mS) 10 gog 1 -0.2 V VGS = 0 V 12 -0.4 V 8 -0.6 V -0.8 V 4 -1.0 V -1.2 V 0.1 0 100 200 500 1000 0 0.2 0.4 0.6 1.0 0.8 VDS - Drain-Source Voltage (V) f - Frequency (MHz) Output Characteristics Output Characteristics 40 50 VGS(off) = -4 V VGS(off) = -8 V 32 40 VGS = 0 V 24 -0.5 V -1.0 V 16 -1.5 V -2.0 V 8 ID - Drain Current (mA) ID - Drain Current (mA) -1 V VGS = 0 V -2 V 30 -3 V 20 -4 V -5 V 10 -2.5 V -6 V -3.0 V 0 0 0 0.2 0.4 0.6 1.0 0.8 0 VDS - Drain-Source Voltage (V) 0.2 0.4 0.6 1.0 0.8 VDS - Drain-Source Voltage (V) VDD SWITCHING TIME TEST CIRCUIT RL 2N4856A 2N4857A 2N4858A VGS(L) -10 V -6 V -4 V RL* 464 W 953 W 1910 W ID(on) 20 mA 10 mA 5 mA OUT VGS(H) VGS(L) 1 *Non-inductive INPUT PULSE SAMPLING SCOPE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF Document Number: 70243 S-04028--Rev. D, 04-Jun-01 51 VIN Scope 51 www.vishay.com 7-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1