DTC143TM / DTC143TE / DTC143TUA
Transistors DTC143TKA / DTC143TSA
Rev.A 1/2
100mA / 50V Digit al transistors
(with built-in resistors)
DTC143TM / DTC143TE / DTC143TUA /
DTC143TKA / DTC143TSA
zApplicat ions
Inverter , Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film r esistors with c omplete isolation to allow negative biasing of the input. They also
have the advantage of almost completely eliminating p arasitic effect s.
3) Only the on/off conditions need to be set for operation, making the device design easy.
zStructure
PNP epit axial planar silicon transistor (Resistor built-in type)
zExternal dimensions (Unit : mm)
Abbreviated symbol : 03
Abbreviated symbol : 03
Abbreviated symbol : 03
Abbreviated symbol : 03
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
DTC143TE
ROHM : VMT3
DTC143TM
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
DTC143TSA
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
DTC143TKA
Abbreviated symbol : C143TS
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
DTC143TUA
Each lead has same dimensions Each lead has same dimensions
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.40.4
1.2
0.8
0.2 0.2
(2)
(1)
1.6 0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(2)
0.5
0.5
(3)
0.2
(1)
0.2
0.15
0.1Min.
0.9
0.7
1.25
2.1
0.3
(3)
0.65
(2)
2.0
1.3
(1)
0.65
(2)(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95 0.95
0.8
0.15
0.3Min.
1.1
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.45
0.5
4.0 2.0
DTC143TM / DTC143TE / DTC143TUA
Transistors DTC143TKA / DTC143TSA
Rev.A 2/2
zPackaging specifications zEquivalent circuit
TL
−
−
−
−
−
−
−−−
−−
−
−
−
−
−
−
−
−
−
UMT3EMT3 SMT3 SPT
DTC143TE
DTC143TM
Part No.
DTC143TUA
3000
T2L
VMT3
8000
T106
3000
T146
3000
TP
5000
DTC143TKA
DTC143TSA
Package
Packaging type TapingTaping Taping Taping Taping
Code
Basic ordering
unit (pieces)
R
1
B : Base
C : Collector
E : Emitter
B
R
1
=4.7kΩ
E
C
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
50
50
5
100
150 200 300
150
−55 to +150
DTC143TEDTC143TM
DTC143TUA DTC143TKA DTC143TSA
V
V
CEO
V
EBO
V
V
mA
mW
°C
°C
I
C
P
C
Tj
Tstg
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Limits
zElectrical characteristics (Ta=25°C)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
f
T
Min.
50
50
5
−
−
100
−
3.29
−
−
−
−
−
−
250
−
4.7
250
−
−
−
0.5
0.5
600
0.3
6.11 −
−
VI
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
50V
V
EB
=
4V
I
C
=
1mA, V
CE
=
5V
I
C
/I
B
=
5mA/0.25mA
V
CE
=10V, I
E
=
−
5mA, f=100MHz
∗
V
V
µA
µA
−
V
kΩ
MHz
Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
∗ Characteristics of built-in transistor
zElectrical characteristic curves
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
V
CE
=5V
100µ200µ500µ1m 2m 5m 10m 20m 50m 100m
1k
500
200
100
50
20
10
5
2
1
Ta=100°C
25°C
−40°C
Fig.1 DC current gain vs.
collector current
100µ200µ500µ1m 2m 5m 10m 20m 50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR CURRENT : I
C
(A)
Ta=100°C
25°C
−40°C
l
C
/l
B
=20
Fig.2 Collector-emitter saturation
voltage vs. collector current
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
