SILICON TRANSISTOR 2SA1400-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 2SA1400-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES @ High Voltage : Vceo = -400 V High Speed : te $1.0 us Complement to 2SC3588-Z QUALITY GRADE Standard Please refer to Quality grade on NEC Semiconductor Devices (Document number IE!-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voltage Vcso -400 Vv Collector to Emitter Voltage Vceo 400 Vv Emitter to Base Voltage VEBO -7 Vv Collector Current (DC) Ic -0.5 A Collector Current (Pulse)* Ic 1.0 A Total Power Dissipation (Ta = 25 C)** Pr 2.0 WwW Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150 C * PW S 300 us, Duty Cycle = 10 % ** When mounted on ceramic substrate of 7.5 cm? x 0.7 mm PACKAGE DIMENSIONS (in millimeters) 1, Base 2. Collector 3. Emitter 4. Collector Document No. TC-1633A (0.D. No. TC-5816) Date Published December 1993 M Printed in Japan NEC Corporation 1985 NEC 2SA1400-Z ELECTRICAL CHARACTERISTICS (Ta = 25 C) 0 -100 ~200 Vce Collector to Emitter Voltage V ~300 ~400 500 0 -2 -4 CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current Icao -100: HA | Vee =-400 V, le = 0 Emitter Cutoff Current lEBo -10 LA Vee = -5.0 V, Ic =0 DC Current Gain hre* 30 200 Vce = -5.0 V, lc =-50 mA Collector Saturation Voltage Veetsat* -1.0 Vv Ic = ~100 mA, is = -10 mA Base Saturation Voltage Veeisan -1.2 Ic = -100 mA, Ip = -10 mA Turn-on Time ton 1.0 us Ic = -100 mA, Ri = 1.5 kQ Storage Time tste 5.0 us Ist = 12 = 10 mA, Vec = -150 V Fall time tr 1.0 HS PW 50 us, Duty Cycle S 2% * Pulsed: PW $ 350 ys, Duty Cycle = 2% hre Classification MARKING N M L K hee - 30 to 60 40 to 80 60 to 120 100 to 200 TYPICAL CHARACTERISTICS (Ta = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE FORWARD BIAS SAFE OPERATING AREA 10 -10 -5 = i 8 S | a 5 -05 o 6 os 5 a CA Oo g 4p 5 ~0.1 6 4 Sy B 0.05 S : 3 4 8 With 7 0.01 9 5 I , - COrapy,; Cm? 2 2 aMic x07 =O I . .005 & Without heatempretate mm 0.001 0 50 100 150 -1 2 4 -10 -20 0-100 -200 -500-1000 Te - Ambient Temperature C Vce ~ Collector to Emitter Voltage - V COLLECTOR CURRENT vs. COLLECTOR REVERSE BIAS SAFE OPERATING AREA TO EMITTER VOLTAGE -250 mes = 200 = & < = 1 L = ary _ Cc _150 3 = S 3 5 a B 7100 Z 3 -80 mA 3 o Oo . > 2 0 2 40 mA lp =-20 mA -6 8 -10 Vce Collector to Emitter Voltage V NEC 2SA1400-Z DC CURRENT GAIN vs. BASE COLLECTOR SATURATION COLLECTOR CURRENT VOLTAGE vs. COLLECTOR CURRENT 1.000 - - @ Vor=-5V > 10 ic/le = 10 500 Pulsed o> ~9 Pulsed ey o . < 200 So -2 100 56 -l ee @ 50 Bs -06 5 ae } & Q 20 Se 02 y 10 oe 0.1 CE(sat) we = nh 5 8 & -0.05 lol 2 & -0.02 1 20.01 t Swithcing Time - ys O1m02m O5mim2m Sm 10m20m 50m100m200m 500m I lc Collector Current - A TURN ON TIME, STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT = le = lei =45, laz=-F 5 | Dotted Line Ip1= lp2 = 0.5 0.2 0.1 0.05 0.02 0.01 10m 20m 50m -100m-200m -500m_ -1 Ic - Collector Current - A O.1m02m OSmim2m - 5m 10mm 5OmM100M200m 500m 1 Ic - Collector Current - A NEC . | | ~ 2SA1400-Z Reference Application note name No. Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. IE1-1207 Design of Push-Pull Type Switching Regulators (Basic). TEB-1002 Design of Push-Pull Type Switching Regulators (Applications). TEB-1003 Optimum Base Drive Conditions of Switching Power Transistors. TEB-1014 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Tra nsportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. - M4 92.6