Silicon npn high voltage transistors Photographs actual size Prot Max. @ Vceo Vcso Veso Ic Tease = Veceoisus) 1) Vee(saty @!le & Is hee 3=@ Ile &Vce fr Out- Type max. max. max. max. 75C min. max. max. min. max. typ. line V Vv V A WwW V C V A A A V MHz DT1003 - aan 12 36 O2 6 1 DTio1g 200 200 5 03 4(1) 125 06 02 004 34 38 OS 6 A DT4305 300 400 265 oy DT4306 375 500 5 5 30(2) 325 125 1:5 3 0-6 10 50 3 5 3 G *DT4423 400 400 5 325 4 "DT4424 500 6 3:5 100 350 150 0:8 1 0:1 30 90 1 5 2:5(3) G "DT4425 500 6 400 2:5(3) *DT4430 300 0-9 2:5 0:5 15 45 25 5 ; *pT4ag1 700 400 5 50 12514) 396 199 9.7 2505 15 35 25 5 70 G DT6105 300 400 265 - DT6106 375 500 5 10 50 325 125 3 5 1 10 50 3 5 5 D *2N2580 400 400 0-7 5 1 10 40 5 5 *2N2581 400 400 1:0 10 2 25 65, 0 5 *2N2582 500 500 10 150(1) 3250 150 9.7 5 10 40 5 5 D *2N2583 500 500 1:0 10 2 25 65 0 5 *2N3079 200 200 200 . *2N3080 300 300 5 5 150(1) 300 150 0:7 5 1 10 50 5 5 D *2N3902 400 5 3:5 100 325 150 0:8 1 0:1 30 90 1 5 4-0 G *2N5157 500 700 6 3:5 100 400 150 0:8 1 0-1 30 90 1 5 G *2N5241 400 400 5 5 125(4) 325 150 0-7 2:5 0-5 15 35 25 5 G *New devices. (1) Tease = 45C. (2) Tease = 65C. (3) fy min. (4) Trace = 625C. Darlington power transistors Veeo(sus) Vepo Veso lc Prot Ti Icpo @ Vee & Tamp Are @ le Vee(saty @ Ico Out Type max. max. max. max. max. max. min. max. max. line V Vv V A WwW c pA Vv C A Vv A *DT3410 40 40 40 1000 2 *DT3411 80 80 80 - 1000 2 "DT3420 +40 40 ~= 5 7(5) 150 10 4g 2 475 2 17 3 UE *DT3421 80 80 80 1750 2 *DT3410A 40 40 40 1000 2 *DT3411A 80 80 80 4 1000 2 . preaon ee tCi 5 175(6) 150 10 80 25 00 3 17 3 OF *DT3421A 80 80 80 1750 2 *New devices. (5) Tamb = 25C. (6) Tease = 25C.