Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 4, 1/2014 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications. Typical Two--Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain -- 15.5 dB Drain Efficiency -- 36% IMD -- --34 dBc Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130--2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability Power Gain -- 15.5 dB Drain Efficiency -- 15% IM3 @ 10 MHz Offset -- --47 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- --49 dBc in 3.84 MHz Channel Bandwidth Typical Single--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930--1990 MHz), IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 16% ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band (1805--1880 MHz) Power Gain -- 16 dB Drain Efficiency -- 33% EVM -- 1.3% rms Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel. 1600--2200 MHz, 10 W, 28 V GSM, GSM EDGE SINGLE N--CDMA 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs TO--270--2 PLASTIC MRF6S20010NR1 TO--270G--2 PLASTIC MRF6S20010GNR1 RFin/VGS 2 1 RFout/VDS (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature TC 150 C Operating Junction Temperature (1,2) TJ 225 C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Freescale Semiconductor, Inc., 2005--2006, 2008--2009, 2014. All rights reserved. RF Device Data Freescale Semiconductor 1 Table 2. Thermal Characteristics Characteristic Symbol Thermal Resistance, Junction to Case Case Temperature 78C, 1 W CW Case Temperature 79C, 10 W PEP, Two--Tone Test Value (1,2) RJC Unit C/W 2.3 2.9 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 500 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 40 Adc) VGS(th) 1.5 2.2 3.5 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 130 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.4 Adc) VDS(on) -- 0.33 0.4 Vdc Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 20 -- pF Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 11.6 -- pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss -- 120 -- pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (3) Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP, f1 = 2170 MHz, f2 = 2170.1 MHz, Two--Tone Test Power Gain Gps 14 15.5 17 dB Drain Efficiency D 33 36 -- % Intermodulation Distortion IMD -- --34 --28 dBc Input Return Loss IRL -- --15 --9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Part internally matched on input. 4. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. (continued) MRF6S20010NR1 MRF6S20010GNR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical 2--Carrier W--CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps -- 15.5 -- dB Drain Efficiency D -- 15 -- % Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW GF -- 0.3 -- dB Intermodulation Distortion IM3 -- --47 -- dBc ACPR -- --49 -- dBc Adjacent Channel Power Ratio Typical N--CDMA Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., 1930 MHz<Frequency<1990 MHz, Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps -- 15.5 -- dB Drain Efficiency D -- 16 -- % Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW GF -- 0.3 -- dB ACPR -- --60 -- dBc Adjacent Channel Power Ratio Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg., 1805--1880 MHz, EDGE Modulation Power Gain Gps -- 16 -- dB Drain Efficiency D -- 33 -- % Gain Flatness in 30 MHz Bandwidth @ Pout = 4 W CW GF -- 0.3 -- dB Error Vector Magnitude EVM -- 1.3 -- % rms Spectral Regrowth at 400 kHz Offset SR1 -- --60 -- dBc Spectral Regrowth at 600 kHz Offset SR2 -- --70 -- dBc MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 3 R1 VBIAS VSUPPLY + R2 C11 C1 Z9 C7 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z10 Z8 C2 C5 Z16 R3 RF INPUT C4 Z11 Z12 Z13 Z14 Z15 RF OUTPUT C6 DUT Z17 C8 Z1, Z15 Z2 Z3, Z5 Z4 Z6 Z7 Z8 Z9 0.066 x 0.480 Microstrip 0.066 x 0.765 Microstrip 0.066 x 0.340 x 0.050 Taper 0.340 x 0.295 Microstrip 0.020 x 0.060 Microstrip 0.0905 x 0.280 Microstrip 0.0905 x 0.330 Microstrip 0.050 x 0.980 Microstrip Z10 Z11 Z12 Z13 Z14 Z16, Z17 PCB C9 C10 0.930 x 0.350 Microstrip 0.930 x 0.400 Microstrip 0.050 x 0.105 Microstrip 0.405 x 0.242 Microstrip 0.066 x 0.740 Microstrip 0.050 x 1.250 Microstrip Taconic RF--35, 0.030, r = 3.5 Figure 2. MRF6S20010NR1 Test Circuit Schematic -- 2110--2170 MHz Table 6. MRF6S20010NR1 Test Circuit Component Designations and Values -- 2110--2170 MHz Part Description Part Number Manufacturer C1 100 nF Chip Capacitor CDR33BX104AKYS Kemet C2, C6 4.7 pF Chip Capacitors ATC100B4R7CT500XT ATC C3, C7, C8 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C4, C5, C9, C10 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C11 10 F, 35 V Tantalum Chip Capacitor T490D106K035AT Kemet R1 1 k, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 10 k, 1/4 W Chip Resistor CRCW12061002FKEA Vishay R3 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay MRF6S20010NR1 MRF6S20010GNR1 4 RF Device Data Freescale Semiconductor R2 C1 C11 C3 C4 R1 C7 C5 R3 C2 CUT OUT AREA C6 C9 C10 C8 MRF6S20010N, Rev. 2 Figure 3. MRF6S20010NR1 Test Circuit Component Layout -- 2110--2170 MHz MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 5 --5 40 D --10 36 28 --15 IRL 32 --20 VDD = 28 Vdc, Pout = 10 W (PEP) IDQ = 130 mA, 100 kHz Tone Spacing --25 24 --30 20 IMD 2050 --35 Gps 16 --40 2130 2090 2170 IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS -- 2110--2170 MHz 2210 f, FREQUENCY (MHz) Figure 4. Two--Tone Wideband Performance @ Pout = 10 Watts (PEP) 18 --10 162.5 mA 16 130 mA 15 97.5 mA 14 65 mA 13 VDD = 28 Vdc, f = 2170 MHz Two--Tone Measurements 100 kHz Tone Spacing 12 11 IMD, INTERMODULATION DISTORTION (dBc) 195 mA --40 162.5 mA --50 97.5 mA 130 mA 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two--Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power VDD = 28 Vdc, IDQ = 130 mA f1 = 2170 MHz, f2 = 2170.1 MHz Two--Tone Measurements 3rd Order --40 7th Order 5th Order --60 --70 0.1 IDQ = 65 mA --30 Pout, OUTPUT POWER (WATTS) PEP --30 --50 --20 30 --10 --20 VDD = 28 Vdc, f = 2170 MHz Two--Tone Measurements 100 kHz Tone Spacing --60 10 1 0.1 IMD, INTERMODULATION DISTORTION (dBc) Gps, POWER GAIN (dB) 17 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 195 mA 1 10 30 30 --20 --30 --40 3rd Order VDD = 28 Vdc, Pout = 10 W (PEP) IDQ = 130 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2170 MHz --50 5th Order --60 7th Order --70 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing MRF6S20010NR1 MRF6S20010GNR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS -- 2110--2170 MHz 18 41 Actual 39 VDD = 28 Vdc, IDQ = 130 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2170 MHz 37 22 20 24 26 28 17 TC = --30_C 16 25_C 15 85_C 14 30 D 20 12 10 11 0.1 30 0 1 10 30 Pout, OUTPUT POWER (WATTS) CW Figure 9. Pulsed CW Output Power versus Input Power Figure 10. Power Gain and Drain Efficiency versus CW Output Power 27 15 18 14 13 VDD = 24 V 28 V 11 32 V 3 6 9 12 15 18 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power 21 6 VDD = 28 Vdc Pout = 10 W (PEP) IDQ = 130 mA S21 3 9 0 0 --3 --9 --6 --18 --9 S11 --27 IDQ = 130 mA f = 2170 MHz 0 85_C 40 Pin, INPUT POWER (dBm) 12 60 --30_C 25_C 50 VDD = 28 Vdc IDQ = 130 mA f = 2170 MHz 13 16 10 Gps --36 400 D DRAIN EFFICIENCY (%) P1dB = 40.9 dBm (12.26 W) 43 70 800 1200 1600 S11 (dB) Gps, POWER GAIN (dB) 45 35 Gps, POWER GAIN (dB) Ideal P3dB = 41.5 dBm (14.2 W) S21 (dB) Pout, OUTPUT POWER (dBm) 47 --12 2000 2400 2800 --15 3200 f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 7 15.8 17 Gps, POWER GAIN (dB) 15.6 16 Gps 15.4 VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 130 mA 2--Carrier W--CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 15.2 15 15 D 14 --45 14.8 --47 14.6 IM3 --49 ACPR --51 14.4 14.2 IRL 14 2060 2080 2100 2120 2140 2160 2180 2200 --53 --55 2220 --10 --12 --14 --16 --18 IRL, INPUT RETURN LOSS (dB) 18 IM3 (dBc), ACPR (dBc) 16 D, DRAIN EFFICIENCY (%) W--CDMA TYPICAL CHARACTERISTICS -- 2110--2170 MHz f, FREQUENCY (MHz) 49 42 35 28 --20 VDD = 28 Vdc, IDQ = 130 mA f1 = 2165 MHz, f2 = 2175 MHz 2--Carrier W--CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 21 --25 --30 --35 D Gps 14 --45 IM3 ACPR 7 0 0.1 --40 TC = 25_C 1 IM3 (dBc), ACPR (dBc) D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 13. 2--Carrier W--CDMA Broadband Performance @ Pout = 1 Watt Avg. --50 10 20 --55 Pout, OUTPUT POWER (WATTS) AVG. Figure 14. 2--Carrier W--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power MRF6S20010NR1 MRF6S20010GNR1 8 RF Device Data Freescale Semiconductor W--CDMA TEST SIGNAL 100 +20 0 --10 1 (dB) PROBABILITY (%) 10 0.1 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.01 0 2 4 6 --20 --30 --40 --50 --70 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --80 --25 --20 --60 0.001 0.0001 3.84 MHz Channel BW +30 8 10 PEAK--TO--AVERAGE (dB) Figure 15. CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single--Carrier Test Signal --15 --10 --5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 16. 2-Carrier W-CDMA Spectrum MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 9 N--CDMA TYPICAL CHARACTERISTICS -- 1930--1990 MHz R1 VBIAS VSUPPLY + R2 C11 C1 C7 Z7 C3 Z1 Z2 Z3 Z4 Z5 C2 C5 Z17 R3 RF INPUT C4 Z8 Z6 Z9 Z10 Z11 Z12 Z13 Z14 RF OUTPUT Z16 Z15 C6 DUT Z18 C8 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 0.066 x 0.480 Microstrip 0.066 x 0.728 Microstrip 0.354 x 0.512 Microstrip 0.066 x 0.079 Microstrip 0.591 x 0.335 Microstrip 0.050 x 0.980 Microstrip 1.142 x 0.350 Microstrip 1.142 x 0.516 Microstrip 0.433 x 0.276 Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17, Z18 PCB C9 C10 0.244 x 0.423 Microstrip 0.244 x 0.066 x 0.089 Taper 0.066 x 0.182 Microstrip 0.066 x 0.263 Microstrip 0.236 x 0.118 Microstrip 0.066 x 0.099 Microstrip 0.050 x 1.250 Microstrip Taconic RF--35, 0.030, r = 3.5 Figure 17. MRF6S20010NR1 Test Circuit Schematic -- 1930--1990 MHz Table 7. MRF6S20010NR1 Test Circuit Component Designations and Values -- 1930--1990 MHz Part Description Part Number Manufacturer C1 100 nF Chip Capacitor 12065C104KAT AVX C2, C6 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC C3, C7, C8 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC C4, C5, C9, C10 10 F Chip Capacitors C5750X5R1H106MT TDK C11 10 F, 35 V Tantalum Chip Capacitor TAJD106K035R AVX R1, R2 10 k, 1/4 W Chip Resistors CRCW12061002FKEA Vishay R3 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay MRF6S20010NR1 MRF6S20010GNR1 10 RF Device Data Freescale Semiconductor N--CDMA TYPICAL CHARACTERISTICS -- 1930--1990 MHz VDD VGS R2 C1 C11 R1 C4 C3 C7 C5 R3 C6 CUT OUT AREA C2 C8 C9 C10 MRF6S20010N Rev 0 Figure 18. MRF6S20010NR1 Test Circuit Component Layout -- 1930--1990 MHz MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 11 N--CDMA TYPICAL CHARACTERISTICS -- 1930--1990 MHz 15.6 18 D 17 16 15 15.5 Gps 15.4 --59 15.3 15.2 ACPR --59.4 --8 --59.8 --11 --60.2 15.1 --60.6 15 IRL 14.9 --61 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz) --14 --17 --20 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 15.7 D, DRAIN EFFICIENCY (%) 15.8 19 VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 500 mA N--CDMA IS--95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ACPR (dBc) 15.9 Figure 19. Single--Carrier N--CDMA Broadband Performance @ Pout = 1 Watt Avg. 50 --45 --50 30 D --55 20 ACPR 10 0 0.1 1 ACPR (dBc) D, DRAIN EFFICIENCY (%) 40 --40 VDD = 28 Vdc, IDQ = 130 mA f = 1960 MHz, N--CDMA IS--95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) --60 10 --65 Pout, OUTPUT POWER (WATTS) AVG. Figure 20. Single--Carrier N--CDMA ACPR and Drain Efficiency versus Output Power MRF6S20010NR1 MRF6S20010GNR1 12 RF Device Data Freescale Semiconductor N--CDMA TEST SIGNAL --10 100 --20 --30 1 --40 --50 0.1 IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) 10 --60 --70 --80 --90 0.0001 0 2 4 6 8 PEAK--TO--AVERAGE (dB) Figure 21. Single--Carrier CCDF N--CDMA 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. ... .. .. . .. . ...................... ......... ........... .... . .............. . ... ............... . ........ . ..... . . . . . ............ . . . . . . .. . .. . . ......... ..... . .. . ...... ...... ...... . . .......... . . . . . . . . . ......... ............. . . . . ....... --ACPR in 30 kHz . . . . .. .... . . +ACPR in 30 kHz ................... ....... .. ............ . . ........... ... ................ . . . . . . Integrated BW Integrated BW .. ........ ...... .......... ...... ............ ........... --100 --110 --3.6 --2.9 --2.2 --1.5 --0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 22. Single--Carrier N--CDMA Spectrum MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 13 GSM EDGE TYPICAL CHARACTERISTICS -- 1805--1880 MHz R1 VBIAS VSUPPLY + R2 C11 C1 C7 Z9 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 C5 Z17 R3 RF INPUT C4 Z10 Z8 C2 Z11 Z12 Z13 Z14 Z15 Z16 RF OUTPUT C6 DUT Z18 C8 Z1, Z16 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.066 x 0.480 Microstrip 0.066 x 0.137 Microstrip 0.236 x 0.236 Microstrip 0.066 x 0.354 Microstrip 0.551 x 0.512 Microstrip 0.066 x 0.079 Microstrip 0.591 x 0.189 Microstrip 0.591 x 0.334 Microstrip 0.050 x 0.980 Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z17, Z18 PCB C9 C10 1.142 x 0.350 Microstrip 1.142 x 0.516 Microstrip 0.433 x 0.276 Microstrip 0.276 x 0.157 Microstrip 0.236 x 0.433 Microstrip 0.066 x 0.104 Microstrip 0.050 x 1.250 Microstrip Taconic RF--35, 0.030, r = 3.5 Figure 23. MRF6S20010NR1 Test Circuit Schematic -- 1805--1880 MHz Table 8. MRF6S20010NR1 Test Circuit Component Designations and Values --1805--1880 MHz Part Description Part Number Manufacturer C1 100 nF Chip Capacitor 12065C104KAT AVX C2, C6 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC C3, C7, C8 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC C4, C5, C9, C10 10 F Chip Capacitors C5750X5R1H106MT TDK C11 10 F, 35 V Tantalum Chip Capacitor TAJD106K035R AVX R1, R2 10 k, 1/4 W Chip Resistors CRCW12061001FKEA Vishay R3 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay MRF6S20010NR1 MRF6S20010GNR1 14 RF Device Data Freescale Semiconductor GSM EDGE TYPICAL CHARACTERISTICS -- 1805--1880 MHz VDD VGS R2 C1 C11 R1 C4 C3 C7 C5 R3 C6 CUT OUT AREA C2 C8 C9 C10 MRF6S20010N Rev. 0 Figure 24. MRF6S20010NR1 Test Circuit Component Layout -- 1805--1880 MHz MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 15 Gps 16 50 0 40 --10 D 15 30 IRL 14 20 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 17 --20 --30 VDD = 28 Vdc IDQ = 130 mA 13 10 1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900 IRL, INPUT RETURN LOSS (dB) GSM EDGE TYPICAL CHARACTERISTICS -- 1805--1880 MHz --40 f, FREQUENCY (MHz) Figure 25. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 4 Watts 60 VDD = 28 Vdc IDQ = 130 mA f = 1840 MHz 5 50 4 40 3 30 D 20 2 EVM 1 10 0 D, DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (% ms) 6 0 0.1 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 26. Error Vector Magnitude and Drain Efficiency versus Output Power GSM EDGE TEST SIGNAL --10 VDD = 28 Vdc IDQ = 130 mA f = 1840 MHz --55 --20 Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz --30 --40 --60 --50 SR @ 400 kHz --65 (dB) SPECTRAL REGROWTH (dBc) --50 --60 --70 --70 --80 --90 SR @ 600 kHz --75 400 kHz 400 kHz 600 kHz 600 kHz --100 --110 --80 0.1 1 10 Center 1.96 GHz 200 kHz Span 2 MHz Pout, OUTPUT POWER (WATTS) Figure 27. Spectral Regrowth at 400 kHz and 600 kHz versus Output Power Figure 28. EDGE Spectrum MRF6S20010NR1 MRF6S20010GNR1 16 RF Device Data Freescale Semiconductor 2170 MHz Zo = 25 VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP f = 2170 MHz Zload f = 2110 MHz f MHz Zsource Zload 2110 3.619 + j0.792 2.544 + j3.068 2140 3.918 + j0.797 2.673 + j3.291 2170 4.087 + j0.558 2.818 + j3.406 f = 2170 MHz f = 2110 MHz Zsource Zo = 25 1900 MHz VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg. f = 1990 MHz Zload f = 1930 MHz f = 1990 MHz Zsource f = 1930 MHz f MHz Zsource Zload 1930 9.237 + j1.849 2.770 + j3.497 1960 9.521 + j2.144 2.754 + j3.668 1990 9.889 + j2.434 2.772 + j3.833 1800 MHz VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg. Zo = 25 f MHz f = 1880 MHz Zload f = 1805 MHz f = 1805 MHz Zsource Zsource Zload 1805 13.237 + j5.810 2.445 + j3.698 1840 13.953 + j6.084 2.542 + j3.942 1880 14.858 + j6.279 2.695 + j4.170 f = 1880 MHz Zsource = Test circuit impedance as measured from gate to ground. Zload Output Matching Network Device Under Test Input Matching Network Z source = Test circuit impedance as measured from drain to ground. Z load Figure 29. Series Equivalent Source and Load Impedance MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 17 Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TA = 25C, 50 ohm system) f MHz S11 S21 S12 S22 |S11| |S21| |S12| |S22| 500 0.984 --178.1 1.195 42.42 0.001 --129.1 0.875 --116.3 550 0.986 --179.0 0.947 40.48 0.001 --159.2 0.892 --121.6 600 0.985 179.9 0.747 39.66 0.001 147.4 0.905 --125.9 650 0.986 178.9 0.581 39.89 0.001 119.1 0.913 --129.9 700 0.982 177.9 0.446 41.80 0.001 108.1 0.927 --133.4 750 0.983 177.2 0.336 46.70 0.002 102.9 0.935 --136.4 800 0.983 176.5 0.248 56.02 0.002 96.99 0.941 --139.5 850 0.979 175.5 0.188 72.74 0.003 97.40 0.947 --141.9 900 0.980 174.8 0.168 96.69 0.003 94.63 0.951 --144.4 950 0.977 174.0 0.183 119.3 0.004 91.92 0.955 --146.6 1000 0.978 173.2 0.223 134.3 0.004 92.80 0.960 --148.6 1050 0.972 172.4 0.276 142.2 0.004 89.92 0.962 --150.5 1100 0.972 171.4 0.335 146.4 0.005 89.90 0.966 --152.2 1150 0.963 170.8 0.396 148.5 0.005 87.51 0.977 --153.7 1200 0.964 169.9 0.461 148.8 0.006 89.25 0.971 --155.2 1250 0.956 169.0 0.531 148.2 0.007 86.98 0.977 --156.8 1300 0.948 167.8 0.604 146.9 0.007 85.08 0.982 --157.9 1350 0.939 167.0 0.685 144.8 0.008 82.40 0.986 --159.5 1400 0.927 165.7 0.772 142.2 0.008 79.69 0.988 --160.7 1450 0.910 164.5 0.869 138.7 0.009 77.79 0.994 --162.1 1500 0.889 163.2 0.975 134.7 0.010 75.79 0.991 --163.4 1550 0.861 161.9 1.093 129.7 0.010 72.86 0.993 --164.7 1600 0.821 160.9 1.221 123.8 0.011 69.89 0.996 --166.0 1650 0.780 160.1 1.356 116.7 0.012 63.71 0.984 --167.4 1700 0.722 160.6 1.491 108.3 0.013 57.70 0.985 --168.5 1750 0.666 162.5 1.606 98.77 0.014 49.85 0.977 --169.6 1800 0.618 167.0 1.687 88.09 0.014 41.19 0.970 --170.8 1850 0.603 173.3 1.706 76.98 0.013 32.65 0.958 --171.3 1900 0.614 179.7 1.673 66.08 0.012 25.40 0.954 --171.9 1950 0.654 --175.6 1.591 55.96 0.011 20.73 0.945 --172.3 2000 0.701 --173.5 1.484 47.04 0.010 15.11 0.947 --172.6 2050 0.747 --172.7 1.364 39.29 0.008 10.13 0.947 --173.0 2100 0.783 --172.6 1.242 32.87 0.006 6.333 0.945 --173.6 2150 0.816 --172.9 1.136 27.69 0.004 15.63 0.944 --173.9 2200 0.842 --173.6 1.042 23.26 0.004 42.20 0.944 --174.2 2250 0.864 --174.2 0.961 19.26 0.005 57.76 0.948 --174.6 2300 0.882 --175.0 0.888 15.75 0.006 62.56 0.948 --175.2 2350 0.894 --175.7 0.822 12.69 0.008 59.72 0.949 --175.7 2400 0.906 --176.4 0.764 9.857 0.009 49.09 0.951 --176.1 2450 0.910 --176.9 0.712 7.587 0.008 39.24 0.955 --176.5 (continued) MRF6S20010NR1 MRF6S20010GNR1 18 RF Device Data Freescale Semiconductor Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TA = 25C, 50 ohm system) (continued) f MHz S11 S21 S12 S22 |S11| |S21| |S12| |S22| 2500 0.923 --177.5 0.666 5.462 0.006 42.56 0.957 --177.2 2550 0.927 --178.0 0.625 3.680 0.006 52.25 0.962 --177.8 2600 0.937 --178.8 0.591 1.864 0.006 60.26 0.961 --178.4 2650 0.937 --179.0 0.559 0.237 0.007 64.14 0.964 --179.1 2700 0.942 --179.8 0.529 --1.378 0.007 65.62 0.964 --179.6 2750 0.945 --179.9 0.504 --2.768 0.007 64.71 0.964 179.7 2800 0.946 179.5 0.479 --4.088 0.007 67.58 0.966 179.4 2850 0.950 179.3 0.456 --5.412 0.007 75.44 0.966 178.8 2900 0.949 178.8 0.436 --6.305 0.008 82.04 0.964 178.3 2950 0.952 178.5 0.419 --7.279 0.009 83.60 0.967 177.9 3000 0.950 178.4 0.402 --8.087 0.011 83.41 0.968 177.4 3050 0.958 177.9 0.387 --9.138 0.012 81.35 0.964 176.8 3100 0.953 177.7 0.373 --9.904 0.013 77.45 0.969 176.4 3150 0.957 177.2 0.362 --10.86 0.014 70.98 0.970 176.2 3200 0.960 177.4 0.350 --11.79 0.013 67.00 0.970 175.5 MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 19 PACKAGE DIMENSIONS MRF6S20010NR1 MRF6S20010GNR1 20 RF Device Data Freescale Semiconductor MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 21 MRF6S20010NR1 MRF6S20010GNR1 22 RF Device Data Freescale Semiconductor MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 23 MRF6S20010NR1 MRF6S20010GNR1 24 RF Device Data Freescale Semiconductor MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 25 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 2 Dec. 2008 Description Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for standardization across products, p. 1 Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1 Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related "Continuous use at maximum temperature will affect MTTF" footnote added and changed 200C to 225C in Capable Plastic Package bullet, p. 1 Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part numbers, p. 4, 10, 14 Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to better match the device's capabilities, p. 6 Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 7 Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 Removed ALT1 definition from Fig. 21, Single--Carrier CCDF N--CDMA, given no supporting performance information provided, p. 13 Replaced Case Outline 1265--08 with 1265--09, Issue K, p. 1, 20--22. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min--Max .290--.320 to .290 Min; E3 changed from Min--Max .150--.180 to .150 Min). Added JEDEC Standard Package Number. Replaced Case Outline 1265A--02 with 1265A--03, Issue C, p. 1, 23--25. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (D2 changed from Min--Max .290--.320 to .290 Min; E3 changed from Min--Max .150--.180 to .150 Min). Added pin numbers. Corrected mm dimension L for gull--wing foot from 4.90--5.06 Min--Max to 0.46--0.61 Min--Max. Added JEDEC Standard Package Number. Added Product Documentation and Revision History, p. 26 3 June 2009 Corrected decimal placement for Ciss (changed 0.12 pF to 120 pF) and Coss (changed 0.02 pF to 20 pF), Dynamic Characteristics table, p. 2 Added footnote, Measurement made with device in straight lead configuration before any lead forming operation is applied, to Functional Tests table, p. 2. Added AN3789, Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages to Product Documentation, Application Notes, p. 26 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 26 (continued) MRF6S20010NR1 MRF6S20010GNR1 26 RF Device Data Freescale Semiconductor REVISION HISTORY (cont.) Revision Date Description 4 Jan. 2014 Table 2. Thermal Characteristics: CW thermal value changed from 2.5 to 2.3C/W to reflect recent thermal test results; two--tone test W PEP thermal value changed from 5.9 to 2.9C/W to reflect recent thermal test results. Thermal value changes are based on an improvement in the RF feedback resistor design, p. 2 Table 3, ESD Protection Characteristics, removed the word "Minimum" after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 Fig. 12, MTTF versus Junction Temperature removed, p. 7. Refer to the device's MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools. MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 27 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. 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