1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation
and multipurpose amplifier applications.
Typical Two--Tone Performance @ 2170 MHz: VDD =28Volts,I
DQ =
130 mA, Pout = 10 Watts PEP
Power Gain — 15.5 dB
Drain Efficiency — 36%
IMD — --34 dBc
Typical 2--Carrier W--CDMA Performance: VDD =28Volts,I
DQ = 130 mA,
Pout = 1 Watt Avg., Full Frequency Band (2130--2170 MHz), Channel
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain — 15.5 dB
Drain Efficiency — 15%
IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth
Typical Single--Carrier N--CDMA Performance: VDD =28Volts,I
DQ =
130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930--1990 MHz),
IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 16%
ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth
Typical GSM EDGE Performance: VDD =28Volts,I
DQ = 130 mA, Pout =
4 Watts Avg., Full Frequency Band (1805--1880 MHz)
Power Gain — 16 dB
Drain Efficiency — 33%
EVM — 1.3% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
225C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +68 Vdc
Gate--Source Voltage VGS --0.5, +12 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1,2) TJ225 C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6S20010N
Rev. 4, 1/2014
Freescale Semiconductor
Technical Data
1600--2200 MHz, 10 W, 28 V
GSM, GSM EDGE
SINGLE N--CDMA
2xW--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF6S20010NR1
MRF6S20010GNR1
T O -- 2 7 0 -- 2
PLASTIC
MRF6S20010NR1
TO--270G--2
PLASTIC
MRF6S20010GNR1
(Top View)
21
Figure 1. Pin Connections
Note: The backside of the package is the
source terminal for the transistor.
RFin/VGS RFout/VDS
Freescale Semiconductor, Inc., 2005--2006, 2008--2009, 2014. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 78C, 1 W CW
Case Temperature 79C, 10 W PEP, Two--Tone Test
RJC
2.3
2.9
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1A
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =68Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 500 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=40Adc)
VGS(th) 1.5 2.2 3.5 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 130 mAdc, Measured in Functional Test)
VGS(Q) 22.8 4Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=0.4Adc)
VDS(on) —0.33 0.4 Vdc
Dynamic Characteristics (3)
Output Capacitance
(VDS =28Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —20 —pF
Reverse Transfer Capacitance
(VDS =28Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —11.6 —pF
Input Capacitance
(VDS =28Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —120 —pF
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 130 mA, Pout = 10 W PEP, f1 = 2170 MHz,
f2 = 2170.1 MHz, Two--Tone Test
Power Gain Gps 14 15.5 17 dB
Drain Efficiency D33 36 — %
Intermodulation Distortion IMD —-- 3 4 -- 2 8 dBc
Input Return Loss IRL — -- 1 5 -- 9 dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched on input.
4. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
(continued)
MRF6S20010NR1 MRF6S20010GNR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical 2--Carrier W--CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 130 mA, Pout =
1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain Gps —15.5 —dB
Drain Efficiency D—15 — %
Gain Flatness in 30 MHz Bandwidth @ Pout =1WCW GF—0.3 —dB
Intermodulation Distortion IM3 —-- 4 7 —dBc
Adjacent Channel Power Ratio ACPR —-- 4 9 —dBc
Typical N--CDMA Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 130 mA, Pout =1WAvg.,
1930 MHz<Frequency<1990 MHz, Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain Gps —15.5 —dB
Drain Efficiency D—16 — %
Gain Flatness in 30 MHz Bandwidth @ Pout =1WCW GF—0.3 —dB
Adjacent Channel Power Ratio ACPR —-- 6 0 —dBc
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 130 mA, Pout =4WAvg.,
1805--1880 MHz, EDGE Modulation
Power Gain Gps —16 —dB
Drain Efficiency D—33 — %
Gain Flatness in 30 MHz Bandwidth @ Pout =4WCW GF—0.3 —dB
Error Vector Magnitude EVM —1.3 —%rms
Spectral Regrowth at 400 kHz Offset SR1 —-- 6 0 —dBc
Spectral Regrowth at 600 kHz Offset SR2 —-- 7 0 —dBc
4
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
Figure 2. MRF6S20010NR1 Test Circuit Schematic — 2110--2170 MHz
Z10 0.930x 0.350Microstrip
Z11 0.930x 0.400Microstrip
Z12 0.050x 0.105Microstrip
Z13 0.405x 0.242Microstrip
Z14 0.066x 0.740Microstrip
Z16, Z17 0.050x 1.250Microstrip
PCB Taconic RF--35, 0.030,r=3.5
Z1, Z15 0.066x 0.480Microstrip
Z2 0.066x 0.765Microstrip
Z3, Z5 0.066x 0.340x 0.050Taper
Z4 0.340x 0.295Microstrip
Z6 0.020x 0.060Microstrip
Z7 0.0905x 0.280Microstrip
Z8 0.0905x 0.330Microstrip
Z9 0.050x 0.980Microstrip
RF
OUTPUT
VBIAS VSUPPLY
RF
INPUT
DUT
Z1
C2
R1
C11
+
C1 C7
R2 Z9
R3
Z2 Z3 Z4 Z5 Z6 Z7 Z8
Z10
Z16
C3 C4 C5
Z11 Z12 Z13 Z14
C6
Z15
Z17
C8 C9 C10
Table 6. MRF6S20010NR1 Test Circuit Component Designations and Values — 2110--2170 MHz
Part Description Part Number Manufacturer
C1 100 nF Chip Capacitor CDR33BX104AKYS Kemet
C2, C6 4.7 pF Chip Capacitors ATC100B4R7CT500XT ATC
C3, C7, C8 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C4, C5, C9, C10 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C11 10 F, 35 V Tantalum Chip Capacitor T490D106K035AT Kemet
R1 1k, 1/4 W Chip Resistor CRCW12061001FKEA Vishay
R2 10 k, 1/4 W Chip Resistor CRCW12061002FKEA Vishay
R3 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
MRF6S20010NR1 MRF6S20010GNR1
5
RF Device Data
Freescale Semiconductor
Figure 3. MRF6S20010NR1 Test Circuit Component Layout — 2110--2170 MHz
CUT OUT AREA
R1
C11
R2 C1
C7
R3
C2
C3
C4 C5
C6
C8
C9 C10
MRF6S20010N, Rev. 2
6
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
TYPICAL CHARACTERISTICS — 2110--2170 MHz
2210
16
40
2050
-- 4 0
-- 5
IRL
Gps
IMD
f, FREQUENCY (MHz)
VDD =28Vdc,P
out = 10 W (PEP)
IDQ = 130 mA, 100 kHz Tone Spacing
36
-- 1 0
32
-- 1 5
28
24
-- 2 0
-- 2 5
20
-- 3 0
2130 2170
Figure 4. Two--Tone Wideband Performance
@P
out = 10 Watts (PEP)
Pout, OUTPUT POWER (WATTS) PEP
11
18
1
IDQ = 195 mA
VDD = 28 Vdc, f = 2170 MHz
Two--Tone Measurements
100 kHz Tone Spacing
17
14
12
10 30
Figure 5. Two--Tone Power Gain versus
Output Power
30
-- 6 0
-- 1 0
0.1 1 10
-- 2 0
-- 3 0
-- 4 0
-- 5 0
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation
Distortion versus Output Power
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
10
-- 7 0
-- 1 0
0.1
7th Order
VDD =28Vdc,I
DQ = 130 mA
f1 = 2170 MHz, f2 = 2170.1 MHz
Two--Tone Measurements
5th Order
3rd Order
-- 2 0
-- 3 0
-- 4 0
130
Figure 7. Intermodulation Distortion Products
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
2090
15
65 mA
130 mA
-- 5 0
-- 3 5
0.1
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
D
16
13
97.5 mA
162.5 mA
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
130 mA
97.5 mA
195 mA
10
-- 7 0
-- 2 0
0.1
7th Order
TWO--TONE SPACING (MHz)
VDD =28Vdc,P
out = 10 W (PEP)
IDQ = 130 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2170 MHz
5th Order
3rd Order
-- 3 0
-- 4 0
-- 5 0
1 100
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
-- 6 0
Pout, OUTPUT POWER (WATTS) PEP
-- 6 0
VDD = 28 Vdc, f = 2170 MHz
Two--Tone Measurements
100 kHz Tone Spacing
162.5 mA
IDQ =65mA
MRF6S20010NR1 MRF6S20010GNR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2110--2170 MHz
30
47
P3dB = 41.5 dBm (14.2 W)
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQ = 130 mA
Pulsed CW, 8 sec(on), 1 msec(off)
f = 2170 MHz
45
43
41
39
35
22 24 26
Actual
Ideal
2820
Figure 9. Pulsed CW Output Power versus
Input Power
Pout, OUTPUT POWER (dBm)
P1dB = 40.9 dBm (12.26 W)
30
11
18
0.1
0
70
TC=--30_C
25_C
-- 3 0 _C
101
16
15
14
12
50
40
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
Gps
85_C
25_C
85_C
VDD =28Vdc
IDQ = 130 mA
f = 2170 MHz
D
DDRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
IDQ = 130 mA
f = 2170 MHz
10
16
018
13
11
14
6912
Gps, POWER GAIN (dB)
21153
VDD =24V 28 V 32 V
-- 3 6
27
400
-- 1 5
6
S21
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
S11
18 3
90
0-- 3
-- 1 8
-- 6
-- 2 7 -- 1 2
320028002400200016001200800
VDD =28Vdc
Pout = 10 W (PEP)
IDQ = 130 mA
S11 (dB)
S21 (dB)
37
17
13
60
30
15
12
-- 9
-- 9
8
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
W--CDMA TYPICAL CHARACTERISTICS — 2110--2170 MHz
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-- 1 8
-- 1 0
-- 1 2
-- 1 6
22202060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 13. 2--Carrier W--CDMA Broadband Performance
@P
out =1WattAvg.
2200218021602140212021002080
16
-- 5 5
18
17
16
15
-- 4 5
-- 4 7
-- 4 9
D, DRAIN
EFFICIENCY (%)
15.8
15.6
15.4
15.2
15
14.8
14.6
-- 5 1 -- 1 4
14
D
VDD =28Vdc,P
out =1W(Avg.),I
DQ = 130 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability(CCDF)
14.4
14.2
14
-- 5 3
IM3 (dBc), ACPR (dBc)
Figure 14. 2--Carrier W--CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0-- 5 5
Pout, OUTPUT POWER (WATTS) AVG.
49 -- 2 0
-- 3 0
35
28 -- 3 5
14
120
-- 4 0
IM3
Gps
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
42
-- 4 5
D
ACPR
0.1
-- 2 5
21 TC=25_C
VDD =28Vdc,I
DQ = 130 mA
f1 = 2165 MHz, f2 = 2175 MHz
2--Carrier W--CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB
@ 0.01% Probability(CCDF)
7-- 5 0
10
MRF6S20010NR1 MRF6S20010GNR1
9
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 15. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
Figure 16. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-- I M 3 i n
3.84 MHz BW
+IM3 in
3.84 MHz BW
--ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
PROBABILITY (%)
(dB)
+20
+30
0
-- 1 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 2 0
20515100-- 5-- 1 0-- 1 5-- 2 0-- 2 5 2
5
-- 3 0
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
10
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz
RF
OUTPUT
VBIAS VSUPPLY
RF
INPUT
DUT
Z1
C2
R1
C11
+
C1 C7
R2 Z7
R3
Z2 Z3 Z4 Z5 Z6
Z8
Z17
C3 C4 C5
Z11 Z12 Z13 Z14
C6
Z16
Z18
C8 C9 C10
Z9 Z10 Z15
Figure 17. MRF6S20010NR1 Test Circuit Schematic — 1930--1990 MHz
Z11 0.244x 0.423Microstrip
Z12 0.244x 0.066x 0.089Taper
Z13 0.066x 0.182Microstrip
Z14 0.066x 0.263Microstrip
Z15 0.236x0.118Microstrip
Z16 0.066x 0.099Microstrip
Z17, Z18 0.050x 1.250Microstrip
PCB Taconic RF--35, 0.030,r=3.5
Z1 0.066x 0.480Microstrip
Z2 0.066x 0.728Microstrip
Z3 0.354x 0.512Microstrip
Z4 0.066x 0.079Microstrip
Z5, Z6 0.591x 0.335Microstrip
Z7 0.050x 0.980Microstrip
Z8 1.142x 0.350Microstrip
Z9 1.142x 0.516Microstrip
Z10 0.433x 0.276Microstrip
Table 7. MRF6S20010NR1 Test Circuit Component Designations and Values — 1930--1990 MHz
Part Description Part Number Manufacturer
C1 100 nF Chip Capacitor 12065C104KAT AVX
C2, C6 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC
C3, C7, C8 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC
C4, C5, C9, C10 10 F Chip Capacitors C5750X5R1H106MT TDK
C11 10 F, 35 V Tantalum Chip Capacitor TAJD106K035R AVX
R1, R2 10 k, 1/4 W Chip Resistors CRCW12061002FKEA Vishay
R3 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
MRF6S20010NR1 MRF6S20010GNR1
11
RF Device Data
Freescale Semiconductor
N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz
Figure 18. MRF6S20010NR1 Test Circuit Component Layout — 1930--1990 MHz
MRF6S20010N
Rev 0
CUT OUT AREA
C11
VDD VGS
R1
R2 C1
C7
R3
C2
C3
C4 C5
C6
C9 C10
C8
12
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc)
-- 2 0
-- 8
-- 11
-- 1 7
20001900
Gps
ACPR
f, FREQUENCY (MHz)
Figure 19. Single--Carrier N--CDMA Broadband Performance
@P
out =1WattAvg.
1970196019501940193019201910
15.9
-- 6 1
19
18
17
16
--59.4
--59.8
D, DRAIN
EFFICIENCY (%)
15.8
15.7
15.6
15.5
15.3
--60.2 -- 1 4
14.9
D
VDD =28Vdc,P
out =1W(Avg.),I
DQ = 500 mA
N--CDMA IS--95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13)
15.1
15
--60.6
15.4
15.2
15
1980 1990
IRL
-- 5 9
ACPR (dBc)
Figure 20. Single--Carrier N--CDMA ACPR and Drain
Efficiency versus Output Power
0-- 6 5
Pout, OUTPUT POWER (WATTS) AVG.
50 -- 4 0
-- 5 0
30
-- 5 5
20
1
D, DRAIN EFFICIENCY (%)
40
D
ACPR
0.1
-- 4 5
VDD =28Vdc,I
DQ = 130 mA
f = 1960 MHz, N--CDMA IS--95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
10 -- 6 0
10
MRF6S20010NR1 MRF6S20010GNR1
13
RF Device Data
Freescale Semiconductor
N--CDMA TEST SIGNAL
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 21. Single--Carrier CCDF N--CDMA
10
1
0.1
0.01
0.001
2468
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability
on CCDF.
PROBABILITY (%)
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-- 6 0
-- 11 0
-- 1 0
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
--100
+ACPRin30kHz
Integrated BW
1.2288 MHz
Channel BW
2.90.7 2.21.50-- 0 . 7-- 1 . 5-- 2 . 2-- 2 . 9-- 3 . 6 3 . 6
f, FREQUENCY (MHz)
Figure 22. Single--Carrier N--CDMA Spectrum
--ACPR in 30 kHz
Integrated BW
14
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz
RF
OUTPUT
VBIAS VSUPPLY
RF
INPUT
DUT
Z1
C2
R1
C11
+
C1 C7
R2 Z9
R3
Z2 Z3 Z4 Z5 Z8
Z10
Z17
C3 C4 C5
Z11 Z12 Z13 Z14
C6
Z16
Z18
C8 C9 C10
Z15
Figure 23. MRF6S20010NR1 Test Circuit Schematic — 1805--1880 MHz
Z10 1.142x 0.350Microstrip
Z11 1.142x 0.516Microstrip
Z12 0.433x 0.276Microstrip
Z13 0.276x 0.157Microstrip
Z14 0.236x 0.433Microstrip
Z15 0.066x 0.104Microstrip
Z17, Z18 0.050x 1.250Microstrip
PCB Taconic RF--35, 0.030,r=3.5
Z1, Z16 0.066x 0.480Microstrip
Z2 0.066x 0.137Microstrip
Z3 0.236x 0.236Microstrip
Z4 0.066x 0.354Microstrip
Z5 0.551x 0.512Microstrip
Z6 0.066x 0.079Microstrip
Z7 0.591x 0.189Microstrip
Z8 0.591x 0.334Microstrip
Z9 0.050x 0.980Microstrip
Z7Z6
Table 8. MRF6S20010NR1 Test Circuit Component Designations and Values —1805--1880 MHz
Part Description Part Number Manufacturer
C1 100 nF Chip Capacitor 12065C104KAT AVX
C2, C6 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC
C3, C7, C8 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC
C4, C5, C9, C10 10 F Chip Capacitors C5750X5R1H106MT TDK
C11 10 F, 35 V Tantalum Chip Capacitor TAJD106K035R AVX
R1, R2 10 k, 1/4 W Chip Resistors CRCW12061001FKEA Vishay
R3 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
MRF6S20010NR1 MRF6S20010GNR1
15
RF Device Data
Freescale Semiconductor
GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz
Figure 24. MRF6S20010NR1 Test Circuit Component Layout — 1805--1880 MHz
MRF6S20010N
Rev. 0
CUT OUT AREA
C11
VDD VGS
R1
R2 C1
C7
R3
C2
C3
C4 C5
C6
C9 C10
C8
16
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
13
1800
10
Gps
VDD =28Vdc
IDQ = 130 mA
17 50
16 40
15 30
14 20
1900
IRL
Figure 25. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 4 Watts
-- 3 0
0
-- 1 0
-- 2 0
-- 4 0
D
D, DRAIN EFFICIENCY (%)
1810 1820 1830 1840 1850 1860 1870 1880 1890
Figure 26. Error Vector Magnitude and Drain
Efficiency versus Output Power
Pout, OUTPUT POWER (WATTS) AVG.
10
2
6
VDD =28Vdc
IDQ = 130 mA
f = 1840 MHz
4
3
0
10.1
1
20
60
40
30
0
10
EVM
D
D, DRAIN EFFICIENCY (%)
EVM, ERROR VECTOR MAGNITUDE (% ms)
50
5
10
-- 8 0
-- 5 0
0.1
Pout, OUTPUT POWER (WATTS)
-- 5 5
-- 6 0
-- 6 5
-- 7 0
-- 7 5
1
VDD =28Vdc
IDQ = 130 mA
f = 1840 MHz
Figure 27. Spectral Regrowth at 400 kHz and
600 kHz versus Output Power
SPECTRAL REGROWTH (dBc)
SR @ 400 kHz
SR @ 600 kHz
Figure 28. EDGE Spectrum
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 9 0
--100
200 kHz Span 2 MHzCenter 1.96 GHz
-- 11 0
400 kHz
600 kHz
400 kHz
600 kHz
(dB)
Reference Power VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
GSM EDGE TEST SIGNAL
MRF6S20010NR1 MRF6S20010GNR1
17
RF Device Data
Freescale Semiconductor
Figure 29. Series Equivalent Source and Load Impedance
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 1880 MHz
Zo=25
Zload Zsource
f
MHz
Zsource
Zload
1805
1840
1880
13.237 + j5.810
14.858 + j6.279
13.953 + j6.084
2.445 + j3.698
2.542 + j3.942
2.695 + j4.170
VDD =28Vdc,I
DQ = 130 mA, Pout =4WAvg.
1800 MHz
f
MHz
Zsource
Zload
2110
2140
2170
3.619 + j0.792
4.087 + j0.558
3.918 + j0.797
2.544 + j3.068
2.673 + j3.291
2.818 + j3.406
VDD =28Vdc,I
DQ = 130 mA, Pout = 10 W PEP
2170 MHz
f
MHz
Zsource
Zload
1930
1960
1990
9.237 + j1.849
9.889 + j2.434
9.521 + j2.144
2.770 + j3.497
2.754 + j3.668
2.772 + j3.833
VDD =28Vdc,I
DQ = 130 mA, Pout =1WAvg.
1900 MHz
f = 1805 MHz
f = 1805 MHz
f = 1880 MHz
f = 1930 MHz
f = 1990 MHz
Zload
Zsource
Zo=25
f = 1990 MHz
f = 1930 MHz
f = 2110 MHz
Zsource
Zload
f = 2170 MHz
f = 2170 MHz
f = 2110 MHz
Zo=25
18
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
Table 9. Common Source Scattering Parameters (VDD =28V,I
DQ = 126 mA, TA=25C, 50 ohm system)
f
MHz
S11 S21 S12 S22
|S11| |S21| |S12| |S22|
500 0.984 --178.1 1.195 42.42 0.001 --129.1 0.875 --116.3
550 0.986 --179.0 0.947 40.48 0.001 --159.2 0.892 --121.6
600 0.985 179.9 0.747 39.66 0.001 147.4 0.905 --125.9
650 0.986 178.9 0.581 39.89 0.001 119.1 0.913 --129.9
700 0.982 177.9 0.446 41.80 0.001 108.1 0.927 --133.4
750 0.983 177.2 0.336 46.70 0.002 102.9 0.935 --136.4
800 0.983 176.5 0.248 56.02 0.002 96.99 0.941 --139.5
850 0.979 175.5 0.188 72.74 0.003 97.40 0.947 --141.9
900 0.980 174.8 0.168 96.69 0.003 94.63 0.951 --144.4
950 0.977 174.0 0.183 119.3 0.004 91.92 0.955 --146.6
1000 0.978 173.2 0.223 134.3 0.004 92.80 0.960 --148.6
1050 0.972 172.4 0.276 142.2 0.004 89.92 0.962 --150.5
1100 0.972 171.4 0.335 146.4 0.005 89.90 0.966 --152.2
1150 0.963 170.8 0.396 148.5 0.005 87.51 0.977 --153.7
1200 0.964 169.9 0.461 148.8 0.006 89.25 0.971 --155.2
1250 0.956 169.0 0.531 148.2 0.007 86.98 0.977 --156.8
1300 0.948 167.8 0.604 146.9 0.007 85.08 0.982 --157.9
1350 0.939 167.0 0.685 144.8 0.008 82.40 0.986 --159.5
1400 0.927 165.7 0.772 142.2 0.008 79.69 0.988 --160.7
1450 0.910 164.5 0.869 138.7 0.009 77.79 0.994 --162.1
1500 0.889 163.2 0.975 134.7 0.010 75.79 0.991 --163.4
1550 0.861 161.9 1.093 129.7 0.010 72.86 0.993 --164.7
1600 0.821 160.9 1.221 123.8 0.011 69.89 0.996 --166.0
1650 0.780 160.1 1.356 116.7 0.012 63.71 0.984 --167.4
1700 0.722 160.6 1.491 108.3 0.013 57.70 0.985 --168.5
1750 0.666 162.5 1.606 98.77 0.014 49.85 0.977 --169.6
1800 0.618 167.0 1.687 88.09 0.014 41.19 0.970 --170.8
1850 0.603 173.3 1.706 76.98 0.013 32.65 0.958 --171.3
1900 0.614 179.7 1.673 66.08 0.012 25.40 0.954 --171.9
1950 0.654 --175.6 1.591 55.96 0.011 20.73 0.945 --172.3
2000 0.701 --173.5 1.484 47.04 0.010 15.11 0.947 --172.6
2050 0.747 --172.7 1.364 39.29 0.008 10.13 0.947 --173.0
2100 0.783 --172.6 1.242 32.87 0.006 6.333 0.945 --173.6
2150 0.816 --172.9 1.136 27.69 0.004 15.63 0.944 --173.9
2200 0.842 --173.6 1.042 23.26 0.004 42.20 0.944 --174.2
2250 0.864 --174.2 0.961 19.26 0.005 57.76 0.948 --174.6
2300 0.882 --175.0 0.888 15.75 0.006 62.56 0.948 --175.2
2350 0.894 --175.7 0.822 12.69 0.008 59.72 0.949 --175.7
2400 0.906 --176.4 0.764 9.857 0.009 49.09 0.951 --176.1
2450 0.910 --176.9 0.712 7.587 0.008 39.24 0.955 --176.5
(continued)
MRF6S20010NR1 MRF6S20010GNR1
19
RF Device Data
Freescale Semiconductor
Table 9. Common Source Scattering Parameters (VDD =28V,I
DQ = 126 mA, TA=25C, 50 ohm system) (continued)
f
MHz
S11 S21 S12 S22
|S11| |S21| |S12| |S22|
2500 0.923 --177.5 0.666 5.462 0.006 42.56 0.957 --177.2
2550 0.927 --178.0 0.625 3.680 0.006 52.25 0.962 --177.8
2600 0.937 --178.8 0.591 1.864 0.006 60.26 0.961 --178.4
2650 0.937 --179.0 0.559 0.237 0.007 64.14 0.964 --179.1
2700 0.942 --179.8 0.529 --1.378 0.007 65.62 0.964 --179.6
2750 0.945 --179.9 0.504 --2.768 0.007 64.71 0.964 179.7
2800 0.946 179.5 0.479 --4.088 0.007 67.58 0.966 179.4
2850 0.950 179.3 0.456 --5.412 0.007 75.44 0.966 178.8
2900 0.949 178.8 0.436 --6.305 0.008 82.04 0.964 178.3
2950 0.952 178.5 0.419 --7.279 0.009 83.60 0.967 177.9
3000 0.950 178.4 0.402 --8.087 0.011 83.41 0.968 177.4
3050 0.958 177.9 0.387 --9.138 0.012 81.35 0.964 176.8
3100 0.953 177.7 0.373 --9.904 0.013 77.45 0.969 176.4
3150 0.957 177.2 0.362 --10.86 0.014 70.98 0.970 176.2
3200 0.960 177.4 0.350 -- 11 . 7 9 0.013 67.00 0.970 175.5
20
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
PACKAGE DIMENSIONS
MRF6S20010NR1 MRF6S20010GNR1
21
RF Device Data
Freescale Semiconductor
22
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
MRF6S20010NR1 MRF6S20010GNR1
23
RF Device Data
Freescale Semiconductor
24
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
MRF6S20010NR1 MRF6S20010GNR1
25
RF Device Data
Freescale Semiconductor
26
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
2Dec. 2008 Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for
standardization across products, p. 1
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1
Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200C to 225C
in Capable Plastic Package bullet, p. 1
Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part
numbers, p. 4, 10, 14
Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to better match the
device’s capabilities, p. 6
Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2and listed
operating characteristics and location of MTTF calculator for device, p. 7
Removed ALT1 definition from Fig. 21, Single--Carrier CCDF N--CDMA, given no supporting performance
information provided, p. 13
Replaced Case Outline 1265--08 with 1265--09, Issue K, p. 1, 20--22. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min--Max .290--.320 to .290 Min; E3 changed from Min--Max .150--.180 to .150 Min). Added JEDEC
Standard Package Number.
Replaced Case Outline 1265A--02 with 1265A--03, Issue C, p. 1, 23--25. Corrected cross hatch pattern
and its dimensions (D2 and E2) on source contact (D2 changed from Min--Max .290--.320 to .290 Min; E3
changed from Min--Max .150--.180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull--wing foot from 4.90--5.06 Min--Max to 0.46--0.61 Min--Max. Added JEDEC Standard Package
Number.
Added Product Documentation and Revision History, p. 26
3June 2009 Corrected decimal placement for Ciss (changed 0.12 pF to 120 pF) and Coss (changed 0.02 pF to 20 pF),
Dynamic Characteristics table, p. 2
Added footnote, Measurement made with device in straight lead configuration before any lead forming
operation is applied, to Functional Tests table, p. 2.
Added AN3789, Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages to
Product Documentation, Application Notes, p. 26
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 26
(continued)
MRF6S20010NR1 MRF6S20010GNR1
27
RF Device Data
Freescale Semiconductor
REVISION HISTORY (cont.)
Revision Date Description
4Jan. 2014 Table 2. Thermal Characteristics: CW thermal value changed from 2.5 to 2.3C/W to reflect recent thermal
test results; two--tone test W PEP thermal value changed from 5.9 to 2.9C/W to reflect recent thermal test
results. Thermal value changes are based on an improvement in the RF feedback resistor design, p. 2
Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
Fig. 12, MTTF versus Junction Temperature removed, p. 7. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
28
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
Information in this document is provided solely to enable system and software
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Document Number: MRF6S20010N
Rev. 4, 1/2014