1996 Sep 26 2
Philips Semiconductors Product specification
Damper diode BY228
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Available in ammo-pack
•Also available with preformed leads
for easy insertion.
APPLICATIONS
•Damper diode in high frequency
horizontal deflection circuits up to
16 kHz.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRSM non-repetitive peak reverse voltage −1650 V
VRRM repetitive peak reverse voltage −1650 V
VRcontinuous reverse voltage −1500 V
IFWM working peak forward current Tamb =75°C; PCB mounting (see
Fig.4); see Fig.2 −5A
I
FRM repetitive peak forward current −10 A
IFSM non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
j max prior to surge;
VR=V
RRMmax
−50 A
Tstg storage temperature −65 +175 °C
Tjjunction temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF= 5 A; Tj=T
j max; see Fig.3 1.4 V
IF= 5 A; see Fig.3 1.5 V
IRreverse current VR=V
Rmax; Tj= 150 °C 150 µA
trr reverse recovery time when switched from IF= 0.5 A to IR=1A;
measured at IR= 0.25 A; see Fig.6 1µs
tfr forward recovery time when switched to IF= 5 A in 50 ns;
Tj=T
j max; Fig.7 1µs