DATA SH EET
Product specification
Supersedes data of May 1996 1996 Sep 26
DISCRETE SEMICONDUCTORS
BY228
Damper diode
handbook, 2 columns
M3D118
1996 Sep 26 2
Philips Semiconductors Product specification
Damper diode BY228
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Available in ammo-pack
•Also available with preformed leads
for easy insertion.
APPLICATIONS
•Damper diode in high frequency
horizontal deflection circuits up to
16 kHz.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRSM non-repetitive peak reverse voltage −1650 V
VRRM repetitive peak reverse voltage −1650 V
VRcontinuous reverse voltage −1500 V
IFWM working peak forward current Tamb =75°C; PCB mounting (see
Fig.4); see Fig.2 −5A
I
FRM repetitive peak forward current −10 A
IFSM non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
j max prior to surge;
VR=V
RRMmax
−50 A
Tstg storage temperature −65 +175 °C
Tjjunction temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF= 5 A; Tj=T
j max; see Fig.3 1.4 V
IF= 5 A; see Fig.3 1.5 V
IRreverse current VR=V
Rmax; Tj= 150 °C 150 µA
trr reverse recovery time when switched from IF= 0.5 A to IR=1A;
measured at IR= 0.25 A; see Fig.6 1µs
tfr forward recovery time when switched to IF= 5 A in 50 ns;
Tj=T
j max; Fig.7 1µs
1996 Sep 26 3
Philips Semiconductors Product specification
Damper diode BY228
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4.
For more information please refer to the
“General Part of associated Handbook”
.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
Rth j-a thermal resistance from junction to ambient note 1 75 K/W
mounted as shown in Fig.5 40 K/W
1996 Sep 26 4
Philips Semiconductors Product specification
Damper diode BY228
GRAPHICAL DATA
Fig.2 Maximum total power dissipation as a
function of working peak forward current.
Solid line: basic high-voltage E/W modulator circuit; see Fig.8.
Dotted line: basic conventional horizontal deflection circuit; see Fig.9.
Curves include power dissipation due to switching losses.
handbook, halfpage
054321
0
MBH407
0.75
0.25
0.50
1.25
1.00
IFWM (A)
Ptot
(W)
Fig.3 Forward current as a function of forward
voltage; maximum values.
Dotted line: Tj= 150 °C.
Solid line: Tj=25°C.
handbook, halfpage
021
0
MBH408
3
1
2
5
4
VF (V)
IF
(A)
Fig.4 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
Fig.5 Mounting with additional printed circuit
board for heat sink purposes.
Dimensions in mm.
handbook, halfpage
35
30
10
MGA204
25.4
10
3 cm
2
copper 3 cm
2
copper
1996 Sep 26 5
Philips Semiconductors Product specification
Damper diode BY228
Fig.6 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤15 ns.
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
Fig.7 Forward recovery time definition.
handbook, halfpage
t
tfr
10%
IF
t
90% 100%
VF
MGD600
1996 Sep 26 6
Philips Semiconductors Product specification
Damper diode BY228
APPLICATION INFORMATION
For horizontal deflection circuits, two basic applications are shown in Figs 8 and 9.
The maximum allowable total power dissipation for the diode can be calculated from the thermal resistance Rth j-a and
the difference between Tj max and Tamb max in the application. The maximum IFWM can then be taken from Fig.2.
The basic application waveforms in Fig.10 relate to the circuit in Fig.8. In the circuit in Fig.9 the forward conduction time
of the diode is shorter, allowing a higher IFWM (see Fig.2).
Fig.8 Application in basic high-voltage E/W
modulator circuit.
D1 = BY228.
handbook, halfpage
MBE935
LY
D1
+ (E-W)
horizontal
deflection
transistor
Fig.9 Application in basic horizontal deflection
circuit.
D1 = BY228.
handbook, halfpage
CfCs
LY
D1
MBE934
horizontal
deflection
transistor
Fig.10 Basic application waveforms.
h
andbook, full pagewidth
T
IF
VR
tp
IFRM
VRRM
IFWM
time
time
MCD430 - 1
1996 Sep 26 7
Philips Semiconductors Product specification
Damper diode BY228
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.11 SOD64.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
MBC049
,
,
4.5
max
ka
28 min28 min 5.0 max
1.35
max
