PD - 90396G POWER MOSFET THRU-HOLE (MO-036AB) IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL (R) HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG110 RDS(on) 0.7 ID 1.0A HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. MO-036AB Features: n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units 1.0 0.6 4.0 1.4 0.011 20 75 -- -- 5.5 -55 to 150 A W W/C V mJ A mJ V/ns o 300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 04/16/02 IRFG110 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Min Typ Max Units Test Conditions -- -- V VGS = 0V, ID = 1.0mA 0.13 -- V/C Reference to 25C, ID = 1.0mA -- -- -- -- -- -- 0.7 0.8 4.0 -- 25 250 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 10 100 -100 15 7.5 7.5 20 25 40 40 -- Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 180 82 15 -- -- -- VGS = 10V, ID = 0.6A VGS = 10V, ID = 1.0A VDS = VGS, ID = 250A VDS > 15V, IDS = 0.6A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID = 1.0A VDS = 50V V S( ) Parameter BVDSS Drain-to-Source Breakdown Voltage 100 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance -- VGS(th) Gate Threshold Voltage 2.0 gfs Forward Transconductance 0.86 IDSS Zero Gate Voltage Drain Current -- -- A nA nC VDD = 50V, ID = 1.0A, VGS =10V, RG = 7.5 ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 1.0 4.0 1.5 200 0.83 Test Conditions A V nS C Tj = 25C, IS = 1.0A, VGS = 0V Tj = 25C, IF = 1.0A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units -- -- -- -- 17 90 C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFG110 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFG110 13a & b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFG110 V DS VGS RD D.U.T. RG + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFG110 15V L VDS D .U .T . RG IA S 10 20V D R IV E R + - VD D A 0 .01 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V 10 .2F .3F 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFG110 Footnotes: Repetitive Rating; Pulse width limited by ISD 1.0A, di/dt 75A/s, maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 150mH Peak IL = 1.0A, VGS = 10V Pulse width 300 s; Duty Cycle 2% VDD 100V, TJ 150C Case Outline and Dimensions -- MO-036AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02 www.irf.com 7