VDRM =4.5kV
VRRM =0V
IPULSE = 100 kA
VDcmax =2.8kV
Features
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Reverse Conducting Design
•
For Repetitive Pulse Applications
•
Very High di/dt Capability
•
Free Floating Silicon Technology
•
Glazed Ceramic Presspack Housing
•
High Interdigitated Gate Structure
•
Optimized as Discharge Switch
•
Driver Unit with integrated Power Supply
•
Optical Triggering
Electrical Data
VDRM Repetitive peak of-state voltage 4.5 kV Tj = 125°C
VRRM Repetitive reverse block ing voltage 0 V Diode integr ated on same wafer
VDC Permanent DC voltage for 100
FIT failure rate 2.8 kV At T j ≤ 120 °C. Ambient cosmic
radiation at sea level in open air.
IPULSE Max. Pulse Current switching par t 100 kA Half sine wave, Tj ≤ 50°C, tp ≤ 100 µs
di/dt-s Max. current rate of rise switch > 20 kA/µ1 Hz
IPULSE Max. Pulse Current diode par t 60 kA Half sine wave, Tj ≤ 50°C, tp ≤ 100 µs
di/dt-d Max. current r at e of rise diode > 10 kA/µ1 Hz
f Pulse repetition r ate ≤ 400 Hz tp = 10 µs, 28 kA, Tc = 60°C
I2t sw Limiting load int egral switch part 0.50 x106A2stp = 100 µs, Tj = 50°C
I2t dio Limiting load int egral diode part 0.18 x106A2stp = 100 µs, Tj = 50°C
VTForward voltage drop 1.99 V It = 3000 A, Tj = 50°C
VT0 Threshold voltag e 1.18 V Tj = 50°C
rTSlope resistance 0.27 mΩTj = 50°C
tdon Turn- on delay time 0,8 µsLight 90%, VD 10%
Remark:
- The trigger pulse length must be at least 50 µs longer than the total main pulse. The device is not able to switch off
current.
ABB Switzerland Ltd reserves the right to change specifications wi thout notice
High Current High di/dt Switch for
Pulsed Power Applications
5SPR 26L4506