kyz, SGSsTHOMSON M27C1000 CMOS 1 Megabit (128K x 8) UV EPROM and OTP ROM VERY FAST ACCESS TIME: 80ns COMPATIBLE WITH HIGH SPEED MICRO- PROCESSORS, ZERO WAIT STATE LOW POWER CMOS CONSUMPTION: ee aa Active Current 30mA 7 ~ Standby Current 100nA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE FOR AUTOMATED PROGRAMMING = PROGRAMMING TIMES OF AROUND 12sec.(PRESTO II ALGORITHM) FDIP32W_ (F) PDIP32 (B) DESCRIPTION The M27C1000 is a high speed 1 Megabit UV erasable and electrically programmable memory EPROM ideally suited for microprocessor systems requiring large programs. It is organized as 131,072 by 8 bits. The 32 pin Window Ceramic Frit-Seal Dual-in-Line package has transparent lid which allows the user to expose the chip to ultraviolet light to erase the Voc Ypp bit pattern. Anew pattern can then be written to the | | device by following the programming procedure. Figure 1. Logic Diagram For applications where the content is programmed 17 8 only one time and erasure is not required, the AOA16 PH KP Q0-07 M27C1000 is offered in Plastic Dual-in-Line pack- age. P d 2701000 Table 1. Signal Names E q AO - A16 Address Inputs G -O Q0 - Q7 Data Outputs E Chip Enable | G Output Enable Vss aos? P Program Vpe Program Supply Veco Supply Voltage Vss Ground May 1992 1/8 113M27C1000 Table 2. Absolute Maximum Ratings Symbol Parameter Value Unit Ta Ambient Operating Temperature: grade 1 0 to 70 C TBias Temperature Under Bias -50 to 125 C Tsta Storage Temperature 65 to 150 C Vio Input or Output Voltages 0.6 to7 Vv Voc Supply Voltage ~0.6 to 7 Vv Vag AQ Voltage 0.6 to 13.5 v Vpp Program Supply Voltage 0.6 to 14 Vv Note: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation ot the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents. Figure 2. DiP Pin Connections Vpp 01 \* 321 Vee Gq2 310 P Ais 03 30 NC Al2 04 29 Al4 A7 5 28 f Al3 AB 6 271 AB AS 07 26 Ag A408 250 ai a3 go M27C1000 54h aie A2 1) 10 23 Alo Al 411 220 E AO 972 21 a7 Qo 4713 20P a6 ai 14 19 f a5 Q2 15 18 f Q4 Vog 4.16 17 fl Q3 VA00838 Warning: NC = No Connection. DEVICE OPERATION The modes of operation of the M27C 1000 are listed in the Operating Modes table. A single 5V power supply is required in the read mode. All inputs are TTL levels except for Vpp and 12V on AQ for Elec- tronic Signature. 2/8 (7 SGS-THOMSON S/ Microniecnnonics 114 Read Mode The M27C1000 has two control functions, both of which must be logically active in order to obtain data at the outputs.Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data to the output pins, indepen- dent of device selection. Assuming that the ad- dresses are stable, the address access time (tavav) is equal to the delay from E to output (teLav). Data is available at the output after a delay of teLav from the falling edge of G, assuming that E has been low and the addresses have been stable for at least tavav-teLav. Standby Mode The M27C1000 has a standby mode which re- duces the active current from 30mA to 100uA (or 35mA to 200UA, see Read Mode DC Characteris- tics Table for details). The M27C1000 is placed in the standby mode by applying a CMOS high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input. Two Line Output Control Because EPROMs are usually used in larger mem- ory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most efficient use of these two control lines, E should be decoded and used as the primaryM27C1000 DEVICE OPERATION (cont'd) device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselected mem- ory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. System Considerations The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the devices. The supply current, Icc, has three seg- ments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. The associated transient voltage peaks can be suppressed by complying with the two line output contro! and by properly selected decoupling capac- (tors. It is recommended that a 1uF ceramic capac- itor be used on every device between Vcc and Vss. This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible. In addition, a 4.7uF bulk electrolytic capacitor should be used between Vcc and Vss for every eight devices. The bulk capacitor should be located near the power supply connec- tion point. The purpose of the bulk capacitor is to Table 3. Operating Modes overcome the voltage drop caused by the inductive effects of PCB traces. Programming When delivered (and after each erasure for UV EPROM), all bits of the M27C1000 are in the 1" state. Data is introduced by selectively program- ming "Os" into the desired bit locations. Although only Os will be programmed, both 1s and Os can be present in the data word. The only way to change a 0 toa1" is by die exposition to ultravi- olet light (UV EPROM). The M27C1000 is in the programming mode when Vpp input is at 12.75V, and E and P are at TTL-low. The data to be pro- grammed is applied 8 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. Vcc is specified to be 6.25V + 0.25V. PRESTO II Programming Algorithm PRESTO I! Programming Algorithm allows the whole array to be programmed, with a guaranteed * margin, in around 12 seconds. Programming with PRESTO II involves in applying a sequence of 100us program pulses to each byte until a correct verify occurs. During programming and verify op- eration, a MARGIN MODE circuit is automatically activated in order to guarantee that each cell is programmed with enough margin. No overpro- gram pulse is applied since the verify in MARGIN MODE provides necessary margin to each pro- grammed cell. Mode E G P AS Vep QO - Q7 Read Vib Vie xX X Veco Data Out Output Disable Vi ViH Xx x Veco Hi-Z Program Vit Vin Vic Pulse x Vep Data In Verify Vit Vit Vie x Vpp Data Out Program Inhibit Vi x x x Vep Hi-Z Standby Vi x x xX Vcc Hi-Z Electronic Signature Vit Vit Vin Vip Voc Codes Notes: X = Vin or Vit, Vio = 12V + 0.5V. Table 4. Electronic Signature identifier AO Q7 Q Qs Qa Q3 Q2 Qi Qo Hex Data Manufacturer's Code Vit 0 0 1 0 0 0 0 0 20h Device Code Vin 0 0 0 0 0 1 0 1 05h ky7 SES;THOMSON se 115M27C1000 AC MEASUREMENT CONDITIONS Figure 4. AC Testing Load Circuit Input Rise and Fall Times < 20ns 13y Input Pulse Voltages 0.4 to 2.4V Input and Output Timing Ref. Voltages 0.8 to 2.0V ingi4 Note that Output Hi-Z is defined as the point where data is no longer driven. 3.3KQ Figure 3. AC Testing Input Output Waveforms DEVICE > ay UNDER OUT TEST T C, =100pF 0.4V ; VA00826 C, includes JIG capacitance VA00828 Table 5. Capacitance (Ta = 25 C, f= 1 MHz) Symbol Parameter Test Condition Min Max Unit Cin Input Capacitance Vin = OV 6 pF Cout Output Capacitance Vout = OV 12 pF Note: This parameter is sampled only and not tested 100%. Table 6. Read Mode DC Characteristics ") (Ta = 0 to 70 C; Voc = 5V + 5% or 5V + 10%; Ver = Voc) Symbol Parameter Test Condition Min Max Unit lu Input Leakage Current OV < Vin < Voc 410 HA ILo Output Leakage Current OV < Vout < Vec +10 HA lcc | Supply Current E =Vi, G = Vu, f = 5MHz 30 mA lect Supply Current (Standby) TTL E=Vin 1 mA Icco | Supply Current (Standby) CMOS E > Vcc - 0.2V 100 pA lpp Program Current Vep = Voc 10 HA ViL Input Low Voltage 0.3 0.8 Vv Vin Input High Voltage 2 Veco +1 v Voi Output Low Voltage lo. = 2.1mMA 0.4 Vv V Output High Voltage TTL lon = 400A 2.4 Vv OH Output High Voltage CMOS lon = -100nA Veco - 0.7V v Notes: 1. Vcc must be applied simultaneously with or before Vpp and removed simultaneously or after Vpp. 2. For Speeds -80, -10 only. For other types the maximum Icc is 35mA. 3. For Speeds -80, -10 only. For other types the maximum Iccz is 200pA. 4/8 . k37 SESSTHOMSON 116Table 7A. Read Mode AC Characteristics (Ta = 0 to 70 C; Vcc = 5V + 5% or 5V + 10%; Vep = Voc) M27C1000 M27C1000 Symbol Alt Parameter Test Condition -80 -10 12 Unit Min | Max | Min | Max | Min | Max tavav tacc |Address Valid to Output Valid E=Vi,G=Vi 80 100 120} ns teLav tce | Chip Enable Low to Output Valid G=V 80 100 120|/ ns teLav toe | Output Enable Low to Output Valid E=Vi 40 50 60 ns teHaz tor | Chip Enable High to Output Hi-Z GeVit 30 | 0 | 30 | 0 | 40] ns tonaz 7) tor | Output Enable High to Output Hi-Z E=Vi 30 | 0 | 301 0 | 40] ns Address Transition to ra a. taxax tou Output Transition E=Vii.G=Vi{ 0 0 0 ns Table 7B. Read Mode AC Characteristics (Ta = 0 to 70 C; Veco = 5V + 5% or 5V + 10%; Vpp = Vcc) M27C1000 Symbol Alt Parameter Test Condition 15 -20 25 Unit Min | Max | Min | Max| Min | Max tavav tacc | Address Valid to Output Valid E=Va,G=Vi 150 200 250| ns teLav tce | Chip Enabie Low to Output Valid G=Vi 150 200 250] ns tctav toe | Output Enable Low to Output Valid E=Va 65 70 100| ns tenaz tor | Chip Enable High to Output Hi-Z G=Vi 0 | 50 60 60 | ns taHoz @ tor |Output Enable High to Output Hi-Z E=Vi 0 |, 50 60 60 ns Address Transition to rs a taxax tou Output Transition E=Vi,G=Vi} 0 0 0 ns Notes: 1. Vcc must be applied simultaneously with or before Ver and removed simultaneously or after Vep. 2. This parameter is sampled only and not 100% tested. Figure 5. Read Mode AC Waveforms AOA16 VALID = tAVQV >| tAXQX A E \ { : m tGLQV > ee tEHOZ G N | le teLQv ~~ le tGHOZ . Hi-Z VAOCTIS 5/8 7 SGS-THOMSON MICRSELECTRINICS 117M27C1000 Table 8. Programming Mode DC Characteristics !) (Ta = 25 C; Voc = 6.25V + 0.25V; Vpp = 12.75V + 0.25V) Symbol Parameter Test Condition Min Max Unit lui Input Leakage Current Vit s Vin Ss Vin +10 pA loc Supply Current 50 mA Ipp Program Current E=Vi 50 mA Vi Input Low Voltage 0.3 0.8 Vv Vin Input High Voitage 2 Veco + 0.5 Vv Vor Output Low Voltage lol = 2.1mA 0.4 Vv Vou Output High Voltage TTL loH = 400A 2.4 v Vio AQ Voltage 11.5 12.5 Vv Note: 1. Vcc must be applied simultaneously with or before Ver and removed simultaneously or after Vep. Table 9. Programming Mode AC Characteristics (Ta = 25 C; Vee = 6.25V + 0.25V; Vpp = 12.75V + 0.25V) Symbol Alt Parameter Test Condition Min Max Unit tavPL tas Address Valid to Program Low 2 us taver tos Input Valid to Program Low 2 us {VPHPL ives Vpp High to Program Low 2 us tvcHPL tvcs Vcc High to Program Low 2 us Chip Enable Low to teLPL tces Program Low 2 us teLPH tpw Program Pulse Width 95 105 Ls Program High to Input tpHox 'oH |) Transition 2 Hs Input Transition to Output taxa toes Enable Low 2 LS Output Enable Low to taLav toe Output Valid 100 ns (2) Output Enable High to taHaz top Output Hi-Z 0 130 ns Output Enable High to taHax taH | Address Transition 9 ns Notes: 1. Vcc must be applied simultaneously with or before Ver and removed simultaneously or after Vee. 2. This parameter is sampled only and not 100% tested. 6/8 ky SGS-THOMSON MICROELECTRONICS 118M27C1000 Figure 6. Programming and Verify Modes AC Waveforms AQA16 K tAVPL - SL on VALID ) DATA IN DATA OUT tPHOX > tCLOVE } tGHOZ + i tGHAX 4} E ers Ul Ol >| tPLPH + PROGRAM a__ VERIFY. tQXGL te VAOQD714 Figure 7. Programming Flowchart Vog = 6.25V. Vpp = 12.5V Vee = 5V, Vpp = 5V Check all Bytes VA00715 yy Program Inhibit Programming of multiple M27C1000s in parallel with different data is also easily accomplished. Except for E, all like inputs including G of the parallel M27C1000 may be common. A TTL low level pulse applied to a M27C1000 E input, with P low and Vpp at 12.75V, will program that M27C1000. A high level E input inhibits the other M27C1000 from being programmed. Program Verify A verify (read) should be performed on the pro- grammed bits to determine that they were correctly programmed. The verify is accomplished with E and G at Vil, P at Vin, Vpp at 12.75V and Vcc at 6.25V. Electronic Signature The Electronic Signature mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25C + 5C ambient temperature range that is required when program- ming the M27C1000. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line AQ of the M27C1000, with SGS-THOMSON 7/8 MICROELECTRONICS 119M27C1000 DEVICE OPERATION (cont'd) Vpp=Vcc=5V. Two identifier bytes may then be sequenced from the device outputs by toggling address line AO from Vi_ to Vin. All other address lines must be held at Vit during Electronic Signa- ture mode. Byte 0 (AO=ViL) represents the manufacturer code and byte 1 (A0=Vin) the device identifier code. For the SGS-THOMSON M27C1000, these two identi- fier bytes are given here below, and can be read- out on outputs QO to Q7. ERASURE OPERATION (applies to UV EPROM) The erasure characteristics of the M27C1000 is such that erasure begins when the cells are ex- posed to light with wavelengths shorter than ap- proximately 4000 A. It should be noted that sunlight and some type of fluorescent lamps have wave- lengths in the 3000-4000 A range. Research ORDERING INFORMATION shows that constant exposure to room level fluo- rescent lighting could erase a typical M27C 1000 in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27C 1000 is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27C1000 window to prevent unintentional erasure. The recommended erasure procedure for the M27C 1000 is exposure to short wave ultraviolet light which has a wavelength of 2537 A. The inte- grated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm?. The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 uW/cm? power rating. The M27C1000 should be placed within 2.5 cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure. Example: M27C1000 -80 X 1 PT | | - a | Speed | Vcc Tolerance | Package | [Temperature Range | -80 80 ns xX +5% F FDIP32W 1 Oto 70C -10 100 ns blank + 10% B PDIP32 -12 120 ns -15 150 ns -20 200 ns -25 250 ns For a list of available options of Speed, Vcc Tolerance, Package and Temperature Range refer to the Selector Guide in this Data Book or the current Memory Shortform that will be periodically up-dated. For further information on any aspect of this device, please contact our Sales Office nearest to you. s ky SES; THOMSON 120