Philips Semiconductors Preliminary specification Ceeeeeeeeeee ener reer ee Three quadrant triacs BTA216X series C high commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL | PARAMETER MAX. | MAX. | MAX. | UNIT triacs in a plastic envelope intended forusein circuits where high static and BTA216X- | 500C | 600C | 800C dynamic dV/dt and high di/dt can Vorm Repetitive peak off-state 500 | 600 | 800 occur. These devices will commutate voltages the full rated rms current at the Iremsy RMS on-state current 16 16 16 A maximum rated junction temperature, TSM Non-repetitive peak on-state 140 | 140 | 140 A without the aid of a snubber. current PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION O 1 main terminal 1 T2 T1 2 | main terminal 2 3 |gate case |isolated S LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL. [PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 Voam Repetitive peak off-state - 500' 600 800 V voltages beams) RMS on-state current full sine wave; - 16 A Tp S38 C lem Non-repetitive peak full sine wave; on-state current J; = 25 C prior to surge t= 20 ms - 140 A t= 16.7 ms - 150 A Ft t for fusing t= 10ms - 98 As di,/dt Repetitive rate of rise of = [ly = 20 A; 1, =0.2 A; 100 A/us on-state current after di,/dt = 0.2 A/us triggering low Peak gate current - 2 A Vom Peak gate voltage - 5 Vv Pou Peak gate power - 5 Ww Peavy Average gate power over any 20 ms - 0.5 Ww period Tag Storage temperature -40 150 *C T Operating junction - 125 Cc temperature Preliminary specification . See Philips Semiconductors for Design-in information 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ps. October 1997 530 Rev 1.000 Philips Semiconductors Preliminary specification Three quadrant triacs BTA216X series C high commutation THERMAL RESISTANCES SYMBOL |PARAMETER | CONDITIONS MIN. | TYP. | MAX. | UNIT Rinjns Thermal resistance full or half cycle junction to heatsink with heatsink compound - - 4.0 | K/W without heatsink compound - - 5.5 | KW Ripa Thermal resistance in free air - 55 - K/AW junction to ambient STATIC CHARACTERISTICS T, = 25 C unless otherwise stated SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT let Gate trigger current Vo =12Vi 4 =0.1A T2+ G+ 2 18 35 mA T2+ G- 2 21 35 mA T2- G- 2 34 35 mA I Latching current Vp =12V; I6p= 0.1 A T2+ G+ - - 20 mA T2+ G- - - 30 mA T2- G- - - 20 mA ha Holding current Vp = 12 Vi ler = O.1A - - 15 mA V; On-state voltage ,=20A - 1.2 15 Vv Ver Gate trigger voltage Vp =12V;h=0.1A - 0.7 1.5 Vv Vo = 400 Vi Ir = 0.1 ALT = 125C 0.25 | 0.4 - Vv lb Off-state leakage current | Vp = Vora may T= 5 - 0.1 0.5 mA DYNAMIC CHARACTERISTICS T, = 25 C unless otherwise stated SYMBOL }PARAMETER CONDITIONS MIN. | TYP. | UNIT dV,/dt Critical rate of rise of Vow = 67% Vormman: Us = 125 C; exponential 1000 - Vins off-state voltage wavelonn: Were open circuit dh on/ dt Critical rate of change of =| Voy = 400 V; T, = 125 C; Inns) = 16 A; without 3 14. | A/ms commutating current snubber; gate open circuit tor Gate controlled turn-on hay = 20 A; Vp = Vormmax: la = 0.1 A; - 2 us time di,/dt =5 Alus 2 Device does not trigger in the T2-, G+ quadrant. October 1997 531 Rev 1.000