Small Signal Schottky Diodes COMCHIP MD DIODE SPECIALIST CDBV3-40/S/C/A-G Reverse Voltage: 40 Volts Forward Current: 200mA RoHS Device Features Designed for mounting on small surface. High speed switching application, circuit protection. Low turn-on voltage Mechanical data Case:SOT-23, molded plastic. Terminals: Solder plated, solderable per MIL-STD-750, method 208. Approx. weight: 0.006 gram f] f4 1 2 1 2 4 4 1 2 1 2 054 (4. 0.045 (1.15) Vv To-osetoaoy 4h SOT-323 q-0.087 (2.20) y, 0.059 (1.80 ) [3] A iT By 0.056 (1.40): : 0.047 (1.20) * >: . 4 0.002 (0.05) 4-0.087 (2.20) 0.078 (2.00) 4.004 (0.10 )max 004 (0.10 )max +| lapaizsases 5008 f0-20} 0.004(0.10)min Dimensions in inches and (millimeters) scone || * Maximum Ratings and Electrical Characteristics (at Ta = 25C unless otherwise noted ) Parameter Condition Symbol Value Unit Repetitive peak reverse voltage VRRM 40 Vv Reverse voltage VR 40 Vv Forward current IF 200 mA Surge peak forward current T=1.0sec IFSmM 0.6 A Power dissipation Pd 200 mW Maximum forward voltage @ IF = 1.0 mA, tp<300us 0.38 @ IF = 40 mA, tp<300us VF 1.0 V Maximum reverse current @ VR=30V IR 0.2 uA Max reverse recovery time Note 1 Trr 5 ns Maximum diode capacitance VR=OV, f=1MHz Cj 5 pF Max. junction temperature Tj 125 c Storage temperature TSTG -65 to +150 ec Note1: IF=10mA through IR=10mA to IR=1.0mA, RL=100 ohms Rev. A QW-BAO00S Page 1 Small Signal Schottky Diodes COMCHIP > RATING AND CHARACTERISTIC CURVES (CDBV3-40/S/C/A-G) Fig. 1- Forward characteristics Fig. 2- Reverse characteristics 1000 100 Forward current (mA) Reverse current (A) 0.1 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 Forward voltage (V) Reverse voltage (V) Fig. 3- Capacitance between Fig.4-P D i terminals characteristics 9 ower Derating Curve : 400 rT a _ OD = Mounting on glass epoxyPCBs __| 2 = E Z 300 3 = c < 3 a 200 IN a S 2 ow N\ Wi 100 IN oe = N\ o Oo K s a. N G a 4 N 0 10 20 30 40 50 60 70 0 100 200 Reverse voltage (V) Ambient temperature (c ) Rev.A ee QW-BAO00S Page 2