SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise * High total power dissipation. (PT=450mW) * High hFE and good linearity * Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 50 Units V VCEO VEBO Collector-Emitter Voltage 45 V Emitter-Base Voltage 5 IC V Collector Current 100 mA PC Collector Power Dissipation 450 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC =100A, IE =0 Min. 50 BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 45 BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 ICBO Collector Cut-off Current VCB =50V, IE =0 IEBO Emitter Cut-off Current VEB =5V, IC =0 hFE DC Current Gain VCE =5V, IC =1mA VCE (sat) Collector-Base Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) Base-Emitter On Voltage VCE =5V, IC =2mA Cob Output Capacitance VCB =10V, IE =0 f=1MHz fT Current Gain Bandwidth Product VCE =5V, IC =10mA NF Noise Figure VCE =5V, IC =0.2mA f=1KHz, RS=2K 60 Typ. Max. Units V V V 50 nA 50 nA 280 1000 IC =100mA, IB =5mA 0.14 0.3 IC =100mA, IB =5mA 0.84 1.0 0.63 0.7 V 2.2 3.5 pF 0.58 150 V 270 0.9 MHz 10 dB hFE Classification Classification A B C D hFE 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000 (c)2002 Fairchild Semiconductor Corporation Rev. A4, November 2002 SS9014 Typical Characteristics 100 1000 VCE = 5V IB = 160A IB = 140A IB = 120A 80 70 hFE, DC CURRENT GAIN IC [mA], COLLECTOR CURRENT 90 IB = 100A 60 IB = 80A 50 IB = 60A 40 IB = 40A 30 20 IB = 20A 100 10 0 10 0 10 20 30 40 50 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE VBE (sat) 100 VCE (sat) IC = 20 IB 10 100 IC [mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage (c)2002 Fairchild Semiconductor Corporation 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE Figure 2. DC current Gain 1000 10 1000 IC [mA], COLLECTOR CURRENT Figure 1. Static Characteristic 1 100 1000 VCE = 5V 100 10 1 10 100 1000 IC [mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. A4, November 2002 SS9014 Package Dimensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.20 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 +0.10 0.38 -0.05 (R2.29) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A4, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2002 Fairchild Semiconductor Corporation Rev. I1