©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
SS9014
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 100 mA
PCCollector Power Dissipation 450 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Voltage IC =100µA, IE =0 50 V
BVCEO Collect or-E mitter Break down Voltage IC =1mA, IB =0 45 V
BVEBO E mitter-B ase Break down Voltage IE =100µA, IC =0 5 V
ICBO Collector Cut-off Current VCB =50V, IE =0 50 nA
IEBO Emitter Cut-off Current VEB =5 V, IC =0 50 nA
hFE DC Current Gain VCE =5V, IC =1mA 60 280 1000
VCE (sat) Collector-Base Saturation Voltage IC =100mA, IB =5mA 0.14 0.3
VBE (sat) Base-Emitter Saturation Voltage IC =100mA, IB =5mA 0.84 1.0 V
VBE (on) Base-Emitter On Voltage VCE =5V, IC =2mA 0.58 0.63 0.7 V
Cob Output Capacitance VCB =10V, IE =0
f=1MHz 2.2 3.5 pF
fTCurrent Gain Bandwidth Product VCE =5V, IC =10mA 150 270 MHz
NF Noise Figure VCE =5V, IC =0.2mA
f=1KHz, RS=2KΩ0.9 10 dB
Classification A B C D
hFE 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000
1. Emitter 2. Base 3. Collector
SS9014
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (PT=450mW)
• High hFE and good linearity
• Complementary to SS9015
TO-92
1
©2002 Fairchild Semiconductor Corporation
SS9014
Rev. A4, November 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product
0 1020304050
0
10
20
30
40
50
60
70
80
90
100
IB = 160µA
IB = 140µA
IB = 120µA
IB = 100µA
IB = 80µA
IB = 60µA
IB = 40µA
IB = 20µA
IC [mA], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000
10
100
1000 VCE = 5V
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
IC = 20 IB
VBE (sat)
VCE (sat)
VBE(s at) , VCE(sat)[mV], SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000 VCE = 5V
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC [mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
SS9014
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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