UF1000F - UF1008F WTE POWER SEMICONDUCTORS 10A ISOLATION ULTRAFAST GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! Ultra-Fast Switching High Current Capability C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability Classification 94V-O D B Mechanical Data ! ! ! ! ! ! A PIN1 2 F Case: ITO-220A Full Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number ITO-220A Dim Min Max A 14.9 15.1 B -- 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74O 3.91O H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm E P I L H PIN 1 + J PIN 2 - K Maximum Ratings and Electrical Characteristics @TA=25C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current UF 1000F UF 1001F UF 1002F UF 1003F UF 1004F UF 1006F UF 1008F Unit VRRM VRWM VR 50 100 200 300 400 600 800 V VR(RMS) 35 70 140 210 280 420 560 V IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage @IF = 10A VFM @TA = 25C @TA = 125C IRM Peak Reverse Current At Rated DC Blocking Voltage @TC = 100C Symbol 1.0 1.3 1.7 10 500 V A Reverse Recovery Time (Note 1) trr 50 100 nS Typical Junction Capacitance (Note 2) Cj 80 50 pF Operating and Storage Temperature Range Tj, TSTG -65 to +150 C Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. UF1000F - UF1008F 1 of 2 (c) 2000 Won-Top Electronics IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 10 8 6 4 2 0 0 50 100 100 1000F - 1002F 1006F - 1008F 1.0 Pulse width = 300s 2% duty cycle 0.1 150 0.2 TC, CASE TEMPERATURE (C) Fig. 1 Forward Current Derating Curve 0.6 1.0 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 180 400 8.3 ms single half-sine-wave JEDEC method 150 1000F - 1004F Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 1003F - 1004F 10 120 90 60 100 1006F - 1008F 30 10 0 1 10 0.1 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current UF1000F - UF1008F 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 2 of 2 (c) 2000 Won-Top Electronics