R.A.P.992304-CHIU 1920CD35 35 Watts, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION The 1920CD35 is a COMMON EMITTER transistor capable of providing 35 Watts of Class AB, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS BASE STATION amplifier applications. It includes Input prematching and utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55AR Style 2 COMMON EMITTER ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25C 120 Watts Maximum Voltage and Current Collector to Emitter Voltage (BVCES) Collector to Emitter Voltage (LCCEO) Collector to Emitter Voltage (BVCER) Emitter to Base Voltage (BVEBO) Collector Current (Ic) Maximum Temperatures Storage Temperature Operating Junction Temperature 55 V 27 V 50 V 3.5 V 14.0 Amps -65 to +200 C +230 C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL CHARACTERISTICS Pout Pin Pg c VSWR1 Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1990 MHz VCC = 25 Volts Icq = 250 mAmps As above MIN TYP MAX 35 6.0 8.0 8.5 43 UNITS W W dB % 3:1 FUNCTIONAL CHARACTERISTICS @ 25C BVCES LVCEO BVCER BVEBO ICES hFE COB jc2 Collector to Emitter Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown Emitter to Base Breakdown Collector Leakage Current DC - Current Gain Output Capacitance Thermal Resistance Ie = 50 mA Ic = 50 mA Ic = 50mA, Re = 10 Ohms Ie = 10mA Vce = 27 V Vce = 5V, Ic = 1A, F = 1 MHz, Vcb = 28V Tc = 25oC 55 25 50 3.5 10 100 20 28 1.6 V V V V mA PF C/W Initial Issue April 1999 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1920CD35 Zin Frequency R 1900 1930 1960 1990 2000 ZCL R jx 4.19 4.22 4.17 3.06 2.74 5.14 4.99 4.62 4.23 4.83 jx 4.7 4.56 4.05 4.39 4.42 -8.28 -8.24 -7.69 -7.38 -7.34 INPUT IMPEDANCE Vcc=25 V Icq=250 mA Pout=35 W CW 6.00 OHMS 5.00 4.00 RIN xIN 3.00 2.00 1.00 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 FREQUENCY (MHZ) Collector Efficiency vs Power out CDMA F=1990 mHz Vcc=25 V Icq=250 mA 35 30 Efficiency % 25 20 Eff CDMA 15 10 5 0 20 22 24 26 28 30 32 34 36 38 Power Out (dBm) CDMA ave 40 42