NTLUS030N03C Product Preview Power MOSFET 30 V, 21 mW, 6.9 A, Single N-Channel, 1.6x1.6x0.55 mm mCool UDFN6 Package www.onsemi.com Features * UDFN Package with Exposed Drain Pads for Excellent Thermal * * * Conduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving Ultra Low RDS(on) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MOSFET V(BR)DSS ID MAX 21 mW @ 10 V 30 V 6.9 A 30 mW @ 4.5 V D Applications * * * * RDS(on) MAX Power Load Switch Wireless Charging DC-DC Converters Motor Drive G MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V ID 6.9 A Continuous Drain Current RJA (Note 1, 3) Power Dissipation RJA (Note 1, 3) Continuous Drain Current RJA (Note 2, 3) Power Dissipation RJA (Note 2, 3) TA = 25C Steady State Steady State Pulsed Drain Current TA = 85C S N-CHANNEL MOSFET S 5.0 D MARKING DIAGRAM 1 UDFN6 (mCOOL) CASE 517AU XXMG G TA = 25C PD 1.49 W TA = 25C ID 4.5 A XX = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) TA = 85C 3.2 TA = 25C PD 0.64 W tp = 10 ms IDM 20 A TJ, TSTG -55 to 150 C TL 260 C Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 in2 pad size, 2 oz Cu pad. 2. Surface-mounted on FR4 board using the min pad size, 2 oz Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. PIN CONNECTIONS D 1 D 2 G 3 6 D 5 D 4 S D S (Top View) This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. (c) Semiconductor Components Industries, LLC, 2017 October, 2017 - Rev. P1 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Publication Order Number: NTLUS030N03C/D NTLUS030N03C THERMAL RESISTANCE RATINGS Symbol Max Junction-to-Ambient - Steady State (Note 1, 3) RJA 83.7 Junction-to-Ambient - Steady State min Pad (Note 2, 3) RJA 196.6 Parameter Unit C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25C Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS VGS = 0 V, VDS = 24 V V TBD mV/C TJ = 25C 1.0 TJ = 125C 10 mA IGSS VDS = 0 V, VGS = 20 V 100 nA VGS(TH) VGS = VDS, ID = 250 mA 2.2 V VGS(TH)/TJ ID = 250 mA, ref to 25C TBD RDS(on) VGS = 10 V, ID = 6.0 A 16.8 21 VGS = 4.5 V, ID = 5.0 A 24 30 VDS = 1.5 V, ID = 5.0 A TBD S 393 pF ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance Forward Transconductance gFS 1.2 mV/C mW CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 10 Total Gate Charge QG(TOT) 2.8 Threshold Gate Charge QG(TH) VGS = 0 V, f = 1 MHz, VDS = 15 V 218 nC TBD VGS = 4.5 V, VDS = 15 V; ID = 5.0 A Gate-to-Source Charge QGS Gate-to-Drain Charge QGD TBD QG(TOT) TBD nC td(ON) TBD ns tr TBD Total Gate Charge TBD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time td(OFF) Fall Time VGS = 4.5 V, VDD = 15 V, ID = 5.0 A, RG = 6 W tf TBD TBD SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time tr td(OFF) Fall Time ns TBD VGS = 10 V, VDD = 15 V, ID = 5.0 A, RG = 6 W tf TBD TBD TBD DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 5.0 A 4. Pulse Test: pulse width 300 ms, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 TJ = 25C 0.8 TJ = 125C TBD 1.1 V NTLUS030N03C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge TBD VGS = 0 V, dIs/dt = 100 A/ms, IS = 5.0 A QRR ns TBD TBD TBD nC 4. Pulse Test: pulse width 300 ms, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. DEVICE ORDERING INFORMATION Device NTLUS030N03CTAG Package Shipping UDFN6 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 NTLUS030N03C PACKAGE DIMENSIONS UDFN6 1.6x1.6, 0.5P CASE 517AU ISSUE O A B D 2X 0.10 C EE EE PIN ONE REFERENCE 2X L1 L E DETAIL A OPTIONAL CONSTRUCTION 0.10 C EXPOSED Cu TOP VIEW A DETAIL B (A3) 0.05 C A1 0.05 C 0.10 C A B MOLD CMPD A3 DETAIL B SEATING PLANE D2 3 1 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 1.60 BSC 1.60 BSC 0.50 BSC 0.62 0.72 0.15 0.25 0.57 0.67 0.55 BSC 0.25 BSC 0.20 0.30 --- 0.15 SOLDERMASK DEFINED MOUNTING FOOTPRINT* e F 6X C SIDE VIEW EE EE DIM A A1 A3 b D E e D1 D2 E2 F G L L1 OPTIONAL CONSTRUCTION A1 NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 0.82 E2 G L 0.16 0.43 0.10 C A B 0.68 2X 6 DETAIL A 4 D1 BOTTOM VIEW 0.35 6X b 0.10 C A B 0.05 C 1.90 NOTE 3 0.28 1 6X 0.50 PITCH 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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