D W DAWIN Electronics TM DM2G300SH6NE May. 2009 High Power Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN'S IGBT 7DM-2 Package devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 6 7 Features 5 4 High Speed Switching BVCES = 600V Low Conduction Loss : VCE(sat) = 2.1 V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10uS at TC=100 Reduced EMI and RFI Isolation Type Package Package : 7DM-2 Series Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 600 V VGES Gate-Emitter Voltage - 20 V IC Collector Current Tc = 25 375 A Tc = 80 300 A - 600 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current Tc = 80 300 A IFM Diode Maximum Forward Current - 600 A TSC Short Circuit Withstand Time Tc = 100 10 uS PD Maximum Power Dissipation Tc = 25 833 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 9 seconds - 260 - 4.0 N.m 2.0 N.m Mounting screw Torque :M6 Power terminals screw Torque :M5 Copyright@Dawin Electronics Corp. All right reserved 1/7 D W DAWIN Electronics TM DM2G300SH6NE May. 2009 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Values Symbol Parameter Conditions BVCES C - E Breakdown Voltage VGE = 0V , IC = 250uA BVCES/ Temperature Coeff. of TJ Breakdown Voltage VGE(th) Unit Typ. Max. 600 - - V VGE = 0V , IC = 1.0mA - 0.6 - V/ G - E threshold voltage IC =300mA , VCE = VGE 5.0 6.5 8.5 V ICES Collector cutoff Current VCE = 600V , VGE = 0V - - 250 uA IGES G - E leakage Current VGE =20V - - 100 nA VCE(sat) Collector to Emitter IC=300A, VGE=15V @TC= 25 - 2.1 2.9 V saturation voltage IC=300A, VGE=15V @TC=100 - 2.4 - V Turn on delay tim e VCC = 300V , IC =300A - 140 - nS Turn on rise time VGE = 15V - 150 - nS Turn off delay tim e RG = 2.1 - 180 - nS Turn off fall time Inductive Load, @TC = 25 - 140 240 nS td(on) tr td(off) tf Min. Eon Turn on Switching Loss - 8.5 - mJ Eoff Turn off Switching Loss - 15 - mJ Ets Total Switching Loss - 23.5 - mJ Tsc Short Circuit Withstand Time 10 - - uS VCC = 300V, VGE = 15V @TC = 100 Qg Total Gate Charge VCC = 300V - 990 - nC Qge Gate-Emitter Charge VGE = 15V - 210 - nC Qgc Gate-Collector Charge IC = 300A - 350 - nC Copyright@Dawin Electronics Corp. All right reserved 2/7 D W DAWIN Electronics TM DM2G300SH6NE May. 2009 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol VFM trr Irr Qrr Parameter Values Conditions Diode Forward Voltage IF=300A Min. Typ. Max. Tc =25 - 1.8 2.2 Tc =100 - 1.9 - Diode Reverse IF=300A, VR=300V Tc =25 - 120 140 Recovery Tim e di/dt= -600A/uS Tc =100 - 140 - Diode Peak Reverse Tc =25 - 40 45 Recovery Current Tc =100 - 47 - Diode Reverse Tc =25 - - - Recovery Charge Tc =100 - - - Unit V nS A nC Thermal Characteristics and Weight Values Symbol Parameter Conditions Min. Typ. Max. Unit RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.15 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.25 /W RCS Case-to-Sink ( Conductive grease applied) 0.04 - - /W Weight Weight of Module - - 250 g Copyright@Dawin Electronics Corp. All right reserved 3/7 D W DAWIN Electronics TM DM2G300SH6NE May. 2009 Performance Curves Common Emitter TC=25 500 600 20V 15V 12V Collector Current, IC [A] Collector Current, IC [A] 600 400 300 V GE=10V 200 100 500 15V 12V 300 V GE=10V 200 100 0 0 1 2 3 4 5 0 Collector - Emitter Voltage, VCE(sat) [V] 1 2 3 4 5 Collector - Emitter Voltage, VCE(sat) [V] Fig 2. Typical Output characteristics Fig 1. Typical Output characteristics 600 600 500 500 T C=25 Load Current [A] 400 T C=125 300 200 100 400 300 200 Duty cycle = 50% TC=125 Power Dissipation = 400W 100 0 0 0 1 2 3 0.1 4 1 Fig 3. Typical Saturation Voltage characteristics 20 20 Collector - Emitter Voltage, VCE(sat) [V] 16 12 300A 400A 4 IC=200A 0 0 5 10 15 100 Fig 4. Load Current vs. Frequency Common Emitter TC=25 8 10 Frequency [KHz] Collector - Emitter Voltage, VCE(sat) [V] Collector - Emitter Voltage, VCE(sat) [V] 20V 400 0 Collector Current, IC [A] Common Emitter TC=125 20 Common Emitter TC=125 15 10 300A 400A 5 IC=200A 0 0 5 10 15 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Typical Saturation Voltage vs. V GE Fig 6. Typical Saturation Voltage vs. V GE Copyright@Dawin Electronics Corp. All right reserved 4/7 W DAWIN Electronics Gate - Emitter Voltage, VGE [V] 15 TM 1 Common Emitter IC=300A TC=25 12 DM2G300SH6NE May. 2009 Thermal Response Zthjc [/W] D V CC=300V 9 6 3 200 400 600 800 1000 0.01 IGBT : DIODE : TC=25 0.001 1.E-05 0 0 0.1 1200 2.E-01 4.E-01 6.E-01 8.E-01 1.E+00 Rectangular Pulse Duration Time [sec] Gate Charge, Qg [nC] Fig 7. Capacitance characteristics Fig 8. Transient Thermal Impedance 1000 3500 Collector Current, IC [A] Collector Current, IC [A] 3000 100 10 2500 2000 1500 1000 500 0 1 0 100 200 300 400 500 600 0 700 Collector - Emitter Voltage, VCE [V] Collector Current, Ic [A ] Collector Current, IC [A] 1ms DC Operation Single Non-repetitive Pulse Tc = 25 Curves must be derated linerarly with increase In temperature 1 500 600 700 TJ 150 VGE 15V 450 100us 100 0.1 400 500 50us Ic MAX. (Continuous) 0.1 300 Fig 10. SCSOA characteristics 1000 Ic MAX. (Pulsed) 1 200 Collector - Emitter Voltage, VCE [V] Fig 9. RBSOA characteristics 10 100 400 350 300 250 200 150 100 50 10 100 0 1000 0 20 40 60 80 100 120 140 160 Case Temperature, Tc [ ] Collector-Emitter Voltage, VCE [V] Fig12. rated Current vs. Case Temperature Fig 11. SOA Characteristic Copyright@Dawin Electronics Corp. All right reserved 5/7 D W DAWIN Electronics TM 600 1000 TJ = 150 VGE 15V 900 800 Forward Current, IF [A] Power Dissipation, PD [ W ] DM2G300SH6NE May. 2009 700 600 500 400 300 200 100 0 T C=25 400 T C=125 200 0 0 20 40 60 80 100 120 140 0 160 Case Temperature, Tc [ ] 1 2 3 Forward Drop Voltage, VF [V] Fig 13. Power Dissipation vs. Case Temperature Fig 14. Forward characteristics Copyright@Dawin Electronics Corp. All right reserved 6/7 4 D W DAWIN Electronics TM May. 2009 Package Out Line Information 7DM-2 Copyright@Dawin Electronics Corp. All right reserved 7/7 DM2G300SH6NE