IRKH56/04AS90PBF - International Rectifier

Parameters IRK.41 IRK.56 Units

IT(AV) or IF(AV)

@ 85°C

IO(RMS) (*) 100 135 A

ITSM @ 50Hz 850 1310 A

IFSM @ 60Hz 890 1370 A

I2t @ 50Hz 3.61 8.50 KA2s

@ 60Hz 3.30 7.82 KA2s

I2√t 36.1 85.0 KA2√s

VRRM range 400 to 1600 V

TSTG - 40 to 125 oC

TJ- 40 to125 oC

(*) As AC switch.

45 60 A

Major Ratings and Characteristics

45 A

60 A

ADD-A-pakTM GEN V Power Modules

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

IRK.41, .56 SERIES

Bulletin I27131 rev. G 10/02

www.irf.com

Features

High Voltage

Industrial Standard Package

Thick Al metal die and double stick bonding

Thick copper baseplate

UL E78996 approved

3500VRMS isolating voltage

Mechanical Description

The Generation V of Add-A-pak module combine the

excellent thermal performance obtained by the usage of

Direct Bonded Copper substrate with superior

mechanical ruggedness, thanks to the insertion of a

solid Copper baseplate at the bottom side of the device.

The Cu baseplate allow an easier mounting on the

majority of heatsink with increased tolerance of surface

roughness and improve thermal spread.

The Generation V of AAP module is manufactured

without hard mold, eliminating in this way any possible

direct stress on the leads.

Benefits

Up to 1600V

Full compatible TO-240AA

High Surge capability

Easy Mounting on heatsink

Al203 DBC insulator

Heatsink grounded

Electrical Description

These modules are intended for general purpose high

voltage applications such as high voltage regulated power

supplies, lighting circuits, temperature and motor speed

control circuits, UPS and battery charger.

The electrical terminals are secured against axial pull-out:

they are fixed to the module housing via a click-stop

feature already tested and proved as reliable on other IR

modules.

IRK.41, .56 Series

Bulletin I27131 rev. G 10/02

www.irf.com

IT(AV) Max. average on-state

current (Thyristors) 45 60 180o conduction, half sine wave,

IF(AV) Maximum average 45 60 TC = 85oC

forward current (Diodes)

IO(RMS)Max. continuous RMS

on-state current.

As AC switch

ITSM Max. peak, one cycle 850 1310 t=10ms No voltage

or non-repetitive on-state 890 1370 t=8.3ms reapplied

IFSM or forward current 715 1100 t=10ms 100% VRRM

750 1150 t=8.3ms reapplied

940 1450 t=10ms TJ = 25oC,

985 1520 t=8.3ms no voltage reapplied

I2t Max. I2t for fusing 3.61 8.56 t=10ms No voltage

3.30 7.82 t=8.3ms reapplied

2.56 6.05 t=10ms 100% VRRM

2.33 5.53 t=8.3ms reapplied

4.42 10.05 t=10ms TJ = 25oC,

4.03 9.60 t=8.3ms no voltage reapplied

I2√t Max. I2√t for fusing (1) 36.1 85.6 KA2√s t=0.1 to 10ms, no voltage reapplied

VT(TO) Max. value of threshold 0.88 0.85 Low level (3)

voltage (2) 0.91 0.88 High level (4)

rtMax. value of on-state 5.90 3.53 Low level (3)

slope resistance (2) 5.74 3.41 High level (4)

VTM Max. peak on-state or ITM = π x IT(AV)

VFM forward voltage IFM = π x IF(AV)

di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,

of rise of turned on ITM =π x IT(AV), Ig = 500mA,

current tr < 0.5 µs, tp > 6 µs

TJ = 25oC, anode supply = 6V,

resistive load, gate open circuit

ILMax. latching current 400 TJ = 25oC, anode supply = 6V,resistive load

TJ = TJ max

Parameters IRK.41 IRK.56 Units Conditions

100 135

(1) I2t for time tx = I2√t x √tx(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2(3) 16.7% x π x IAV < I < π x IAV

(4) I > π x IAV

On-state Conduction

IHMax. holding current 200

Initial TJ = TJ max.

150 A/µs

KA2s

mΩ

1.81 1.54 V

I(RMS) I(RMS)

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Type number

VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM

Voltage repetitive non-repetitive peak off-state voltage, IDRM

Code peak reverse voltage peak reverse voltage gate open circuit 125°C

-V V VmA

04 400 500 400

06 600 700 600

08 800 900 800

IRK.41/ .56 10 1000 1100 1000 15

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

Sinusoidal

half wave,

Initial TJ = TJ max.

TJ = 25°C

IRK.41, .56 Series

Bulletin I27131 rev. G 10/02

www.irf.com

A mounting compound is recommended

and the torque should be rechecked after a

period of 3 hours to allow for the spread of

the compound

TJJunction operating

temperature range

Tstg Storage temp. range - 40 to 125

RthJC Max. internal thermal

resistance, junction 0.23 0.20 Per module, DC operation

to case

RthCS Typical thermal resistance

case to heatsink

T Mounting torque ± 10%

to heatsink 5

busbar 3

wt Approximate weight 110 (4) gr (oz)

Case style TO-240AA JEDEC

Thermal and Mechanical Specifications

Parameters IRK.41 IRK.56 Units Conditions

- 40 to 125

0.1

(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.

°C

K/W

Mounting surface flat, smooth and greased

IRRM Max. peak reverse and

IDRM off-state leakage current

at VRRM, VDRM

2500 (1 min) 50 Hz, circuit to base, all terminals

3500 (1 sec) shorted

dv/dt Max. critical rate of rise TJ = 125oC, linear to 0.67 VDRM,

of off-state voltage (5) gate open circuit

15 mA TJ = 125 oC, gate open circuit

500 V/µs

Blocking

VINS RMS isolation voltage V

Triggering

PGM Max. peak gate power 10 10

PG(AV) Max. average gate power 2.5 2.5

IGM Max. peak gate current 2.5 2.5 A

-VGM Max. peak negative

gate voltage

4.0 TJ = - 40°C

2.5 TJ = 25°C

1.7 TJ = 125°C

270 TJ = - 40°C

150 mA TJ = 25°C

80 TJ = 125°C

VGD Max. gate voltage

that will not trigger

IGD Max. gate current

that will not trigger

Parameters IRK.41 IRK.56 Units Conditions

0.25 V

6mA

Anode supply = 6V

resistive load

VGT Max. gate voltage

required to trigger

Anode supply = 6V

resistive load

IGT Max. gate current

required to trigger

TJ = 125oC,

rated VDRM applied

TJ = 125oC,

rated VDRM applied

Parameters IRK.41 IRK.56 Units Conditions

Sine half wave conduction Rect. wave conduction

Devices Units

180o120o90o60o30o180o120o90o60o30o

IRK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34

IRK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28 °C/W

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

IRK.41, .56 Series

Bulletin I27131 rev. G 10/02

www.irf.com

IRK T 56 / 16 A S90

Device Code

12 3 45

1- Module type

2- Circuit configuration (See Circuit Configuration table below)

3- Current code * *

4- Voltage code (See Voltage Ratings table)

5- A : Gen V

6- dv/dt code: S90 = dv/dt 1000 V/µs

No letter = dv/dt 500 Vµs

Ordering Information Table

* * Available with no auxiliary cathode.

To specify change: 41 to 42

56 to 57

e.g. : IRKT57/16A etc.

IRK.57 types

With no auxiliary cathode

Outline Table

Dimensions are in millimeters and [inches]

NOTE: To order the Optional Hardware see Bulletin I27900

K2 G2

K1G1

(1)

(2)

(3)

(4) (5) (7) (6)

(1)

(2)

(3)

(4) (5)

(1)

(2)

(3)

(7)

(6)

IRKT IRKH IRKL IRKN

(1)

(2)

(3)

(4) (5)

IRK.41, .56 Series

Bulletin I27131 rev. G 10/02

www.irf.com

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

100

110

120

130

0 1020304050

Maximum Allo wable Case Temperatur e (°C)

30° 60° 90° 120° 180°

Average On-state Current (A)

Conduction Angle

IRK.41.. S eries

R (DC) = 0.46 K/W

thJC

100

110

120

130

0 20406080

30° 60° 90° 120° 180°

Average On-state Current (A)

Maximum All owable Case Temperature (°C )

Conduction Period

IRK.4 1 .. S eries

R (DC) = 0.4 6 K/W

thJC

Fig. 3 - On-state Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 4 - On-state Power Loss Characteristics

100

0 20406080

180°

120°

90°

60°

30° RMS Limit

Co ndu ct ion Per iod

Max imum Av erage On-s t ate Power Loss (W)

Average On-state Current (A)

IRK.41.. Series

Per Junction

T = 125°C

0 1020304050

180°

120°

90°

60°

30° RMS Limit

Con duct ion A ngl e

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

IRK.41.. Serie s

Per Junction

T = 125°C

300

400

500

600

700

800

1 10 100

Number Of Equal Amp litude Half Cycle Current Pulses (N)

At Any Rated Loa d Condition And With

Rated V Applied Following Surge.

RRM

Peak Half Sine Wave On-state Current (A)

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

IRK.41.. Series

Per Junction 300

400

500

600

700

800

900

0.01 0.1 1

Pulse Tra i n Duratio n (s )

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

RRM

Of Conduction May Not Be Maintained.

Peak Half Sine Wave On-state Current (A)

IRK.41.. Series

Per Junction

IRK.41, .56 Series

Bulletin I27131 rev. G 10/02

www.irf.com

Fig. 9 - On-state Power Loss Characteristics

Fig. 8 - On-state Power Loss Characteristics

Fig. 7 - On-state Power Loss Characteristics

0 20 40 60 80 100 120 140

Maximum Allowable Ambi ent Temperature (°C)

1.5 K/W

1 K/W

0.7 K/W

0.5 K/W

0.3 K/W

R = 0.1 K/W - Delta R

thSA

0.2 K/W

100

150

200

250

300

350

020406080100

Total Outpu t Current (A)

Maximum Total Power Loss (W)

180°

(Sine)

180°

(Rect)

2 x IRK.41.. Series

Single Phase Bridge

Connected

T = 125°C

0 20 40 60 80 100 120 140

Maximum Allowable Ambie nt Te mp erature (° C)

1 K/W

0.7 K/W

0.5 K/W

0.3 K/W

0.2 K/W

R = 0.1 K/W - Delta R

thSA

100

150

200

250

300

350

400

450

500

0 20 40 60 80 100 120 140

Total Ou tpu t Current (A)

Maximum Total Power Loss (W)

120°

(Rect)

3 x IRK.41.. Series

Th ree Ph ase Bridge

Connected

T = 125°C

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

3 K/W

2 K/W

1.5 K/W

1 K/W

0.7 K/W

0.5 K/W

0.3 K/W

R = 0.1 K/W - Delta R

5 K/W

thSA

100

120

140

020

100

180°

120°

90°

60°

30°

Total RMS Output Current (A)

Maximum Total On-state Power Loss (W)

Conduction Angle

IRK.41.. Series

Per Module

T = 125°C

IRK.41, .56 Series

Bulletin I27131 rev. G 10/02

www.irf.com

Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics

100

110

120

130

0 10203040506070

Maximum A ll o wable Case Temperature (°C)

30° 60° 90° 120° 180°

Av erage On-state Current (A)

Conduction Angle

IRK.56.. Series

R (DC) = 0. 40 K/W

thJC

100

110

120

130

0 20406080100

30° 60°

90°

120° 180°

Average On-state Current (A)

Maximum Allowab le Case Temperature (°C)

Conduction Period

IRK.56.. Series

R (DC) = 0.40 K/W

thJC

Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current

Fig. 13 - On-state Power Loss Characteristics

Fig. 12 - On-state Power Loss Characteristics

100

120

0 20 40 60 80 100

180°

120°

90°

60°

30°

RMS Limit

Conductio n Period

Maxi mum Av erage On-state P ower Loss (W)

Average On-sta te Current ( A)

IRK.56.. Series

Per Junction

T = 125°C

0 102030405060

180°

120°

90°

60°

30°

RMS Limit

Condu ct ion An g le

Maximum A v erage On-state Power Loss (W)

Average On-state Current (A)

IRK.56.. Series

Per Junctio n

T = 125°C

500

600

700

800

900

1000

1100

1200

1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM J

Peak Half Sine Wave On-state Current (A)

IRK.56.. Series

Per Junc tion 400

600

800

1000

1200

1400

0.01 0.1 1

Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

Of Conduction May Not Be Maintained.

RRM

IRK.56.. Series

Per Junction

IRK.41, .56 Series

Bulletin I27131 rev. G 10/02

www.irf.com

Fig. 16 - On-state Power Loss Characteristics

Fig. 17 - On-state Power Loss Characteristics

Fig. 18 - On-state Power Loss Characteristics

0 20406080100120140

Maximum Allowable Ambient Temperature (°C)

4 K/W

2 K/W

1.5 K/W

1 K/W

0.7 K/W

0.5 K/W

0.3 K/W

R = 0.1 K/W - Delta R

thSA

0.2 K/W

0.4 K/W

100

120

140

160

180

200

0 20406080100120140

180°

120°

90°

60°

30°

Total RMS Output Current (A)

Maximum Total On-state Power Loss (W)

Conduction Angle

IRK.56.. Series

Per Module

T = 125°C

0 20406080100120140

Maximum Allowable Ambient Temperature (°C)

2 K/W

1 K/W

R = 0.1 K/W - Delta R

thSA

0.7 K/W

0.5 K/W

0.3 K/W

0.2 K/W

100

150

200

250

300

350

400

450

0 20406080100120140

Total Output Cu rrent (A)

Maxim um Tota l Power Loss (W)

180°

(Sine)

180°

(Rect)

2 x IRK.56.. Series

Single Phase Bridge

Connected

T = 125°C

0 20 40 60 80 100 120 140

Maximum Allowable Am b i ent Tempera ture (°C)

1 K/W

0.7 K/W

0.5 K/W

0.3 K/W

R = 0.1 K/W - Delta R

thSA

0.2 K/W

100

200

300

400

500

600

0 20 40 60 80 100 120 140 160 180

Total Output Current (A)

Maximum Total Power Loss (W)

120°

(Rect)

3 x IRK.56.. Series

Thr ee Phase Bridge

Connected

T = 125°C

IRK.41, .56 Series

Bulletin I27131 rev. G 10/02

www.irf.com

Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics

100

1000

0.5 1 1.5 2 2.5 3 3.5 4 4.5

T = 25°C

Instantaneous On-state Cu rrent (A)

Instantaneous On-state Voltage ( V )

T = 125°C

IRK.56.. Series

Per Junction

100

1000

01234567

T = 25°C

Instantaneous O n- state Cur rent (A)

Ins tantaneous O n -state Voltage (V)

T = 125°C

IRK.41.. Series

Per Junction

Fig. 23 - Thermal Impedance ZthJC Characteristics

Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics

100

110

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Current - Irr (A)

Rate Of Fall Of Forward Current - di/dt (A/µs)

100 A

50 A

I = 200 A

20 A

10 A

IRK.41.. Series

IRK.56.. Series

T = 125 °C

100

150

200

250

300

350

400

450

500

10 20 30 40 50 60 70 80 90 100

100 A

50 A

Rate Of Fall Of On-state Current - d i/dt (A/µs)

Maximum Re verse Reco very Cha rge - Qrr (µC)

I = 200 A

20 A

10 A

IRK.41.. Series

IRK.56.. Series

T = 125 °C

0.01

0.1

0.001 0.01 0.1 1 10

S quar e Wave P ulse Duration (s)

thJC

Trans ient Thermal Impedance Z (K/W)

Per Junction

Steady State Value:

R = 0.46 K/W

R = 0.40 K/W

(DC Op eration) IRK.41.. Series

IRK.56.. Series

thJC

IRK.41, .56 Series

Bulletin I27131 rev. G 10/02

www.irf.com

Fig. 24 - Gate Characteristics

0.1

100

0.001 0.01 0.1 1 10 100 1000

(b) (a)

Rectangular gate pulse

(4) (3) (2) (1)

(1) PGM = 100 W, tp = 500 µs

(2) PGM = 50 W, tp = 1 ms

(3) PGM = 20 W, tp = 25 ms

(4) PGM = 10 W, tp = 5 ms

Insta ntaneo u s Ga te Cu rr ent (A)

Ins tantaneous G ate Vol tage (V)

TJ = -40 °C

TJ = 25 °C

TJ = 125 °C

a)Recommende d load line f or

b)Rec om mend ed load li ne for

VGD IGD Freq uency Limi ted by PG(AV )

rated di/dt: 20 V, 30 ohms

tr = 0.5 µs, tp >= 6 µs

<= 30% rated di/dt: 20 V, 65 ohms

tr = 1 µs, tp >= 6 µs

IRK.41 ../.56.. Series

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 10/02

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.