STGP15M120F3 Datasheet Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package Features TAB 1 2 3 TO-220 * * 10 s of minimum short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A * * Tight parameter distribution Positive VCE(sat) temperature coefficient * * Low thermal resistance Maximum junction temperature: TJ = 175 C Applications C(2, TAB) * * * * G(1) Industrial drives UPS Solar Welding Description E(3) G1C2TE3 Product status link This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. STGP15M120F3 Product summary Order code STGP15M120F3 Marking G15M120F3 Package TO-220 Packing Tube DS11255 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STGP15M120F3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit Collector-emitter voltage (VGE = 0 V) 1200 V Continuous collector current at TC = 25 C 30 A Continuous collector current at TC = 100 C 15 A ICP(1) Pulsed collector current 60 A VGE Gate-emitter voltage 20 V PTOT Total dissipation at TC = 25 C 259 W Tstg Storage temperature range -55 to 150 C Operating junction temperature range -55 to 175 C Value Unit VCES IC TJ 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol DS11255 - Rev 3 Parameter RthJC Thermal resistance junction-case 0.58 RthJA Thermal resistance junction-ambient 62.5 C/W page 2/15 STGP15M120F3 Electrical characteristics 2 Electrical characteristics TJ = 25 C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions Min. V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA 1200 VGE = 15 V, IC = 15 A Collector-emitter saturation voltage VGE = 15 V, IC = 30 A, VCE = VGE, IC = 500 A ICES Collector cut-off current IGES Gate-emitter leakage current V 2.2 TJ = 175 C Gate threshold voltage Unit 2.3 2.1 TJ = 125 C VGE(th) Max. V 1.85 VGE = 15 V, IC = 15 A, VCE(sat) Typ. 5 6 7 V VGE = 0 V, VCE = 1200 V 25 A VCE = 0 V, VGE = 20 V 250 nA Table 4. Dynamic characteristics Symbol Parameter Test conditions Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. Unit - 985 - pF - 118 - pF - 38 - pF Qg Total gate charge VCC = 960 V, IC = 15 A, - 53 - nC Qge Gate-emitter charge VGE = 0 to 15 V - 8 - nC Qgc Gate-collector charge (see Figure 23. Gate charge test circuit) - 32 - nC Min. Typ. Max. Unit Turn-on delay time - 26 - ns Current rise time - 12 - ns - 1000 - A/s - 122 - ns - 163 - ns - 0.55 - mJ Table 5. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off delay time Current fall time Test conditions VCE = 600 V, IC = 15 A, VGE = 15 V, RG = 22 , (see Figure 22. Test circuit for inductive load switching) Eon(1) Turn-on switching energy (2) Turn-off switching energy - 0.85 - mJ Total switching energy - 1.4 - mJ Eoff Ets DS11255 - Rev 3 Parameter page 3/15 STGP15M120F3 Electrical characteristics Symbol td(on) tr Parameter Test conditions Turn-on delay time Current rise time Min. Typ. Max. Unit - 25 - ns - 14 - ns Turn-on current slope VCE = 600 V, IC = 15 A, - 857 - A/s Turn-off delay time VGE = 15 V, RG = 22 , - 136 - ns Current fall time TJ = 175 C - 270 - ns Eon(1) Turn-on switching energy (see Figure 22. Test circuit for inductive load switching) - 1.1 - mJ (2) Turn-off switching energy - 1.13 - mJ Ets Total switching energy - 2.23 - mJ tsc Short-circuit withstand time - s (di/dt)on td(off) tf Eoff VCC 600 V, VGE = 15 V, TJstart = 150 C 10 1. Including the recovery of the external diode. The diode is the same of the co-packed STGWA15M120DF3 device. 2. Including the tail of the collector current. DS11255 - Rev 3 page 4/15 STGP15M120F3 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature GIPD271020141420FSR Ptot (W) VGE 15 V, T J 175 C 250 Figure 2. Collector current vs case temperature GIPD291020141132FSR IC (A) VGE 15 V, T J 175 C 30 25 200 20 150 15 100 10 50 5 0 0 100 50 TC(C) 150 Figure 3. Output characteristics (TJ = 25 C) GIPD291020141140FSR IC (A) VGE=15V 0 0 100 50 TC(C) 150 Figure 4. Output characteristics (TJ = 175C) GIPD291020141151FSR IC (A) VGE=15V 13V 50 50 13V 40 40 11V 30 30 20 20 9V 10 0 0 1 2 3 4 5 VCE(V) Figure 5. VCE(sat) vs junction temperature VCE(sat) (V) GIPD291020141158FSR VGE=15V IC=30A 3.2 11V 9V 10 0 0 7V 1 2 3 4 5 VCE(V) Figure 6. VCE(sat) vs collector current GIPD291020141315FSR VCE(sat) (V) 3.2 Tj=175C VGE=15V 2.8 2.8 Tj=25C 2.4 2.4 IC=15A 2.0 2.0 1.6 1.2 -50 DS11255 - Rev 3 Tj=-40C 1.6 IC=7.5A 1.2 0 50 100 150 TC(C) 0.8 0 5 10 15 20 25 IC(A) page 5/15 STGP15M120F3 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency GIPD291020141321FSR IC (A) Figure 8. Safe operating area GIPD291020141330FSR IC (A) TC=80C 40 1s TC=100C 30 10s 10 20 100s 10 Single pulse, Tc=25C Tj<175C, VGE=15V Rectangular current shape, (duty cycle=0.5, Vcc= 600V Rg=22, Vge=0/15V, Tj=175 C) 0 1 f(kHz) 10 Figure 9. Transfer characteristics GIPD291020141347FSR IC (A) 1 1 100 10 VCE(V) 1000 Figure 10. Normalized VGE(th) vs junction temperature GIPD291020141405FSR VGE(th) (norm) VCE=VGE IC=500A Tj=25C 50 1ms 1.1 40 1.0 30 VCE = 8V 0.9 20 0.8 10 0 3 Tj=175C 5 7 9 11 VGE(V) Figure 11. Normalized V(BR)CES vs junction temperature GIPD291020141443FSR V(BR)CES (norm) IC=2mA 1.04 0.7 -50 100 50 0 150 TC(C) Figure 12. Capacitance variations GIPD291020141507FSR C(pF) Cies 1000 1.0 100 Coes 0.96 10 0.92 0.88 -50 DS11255 - Rev 3 f= 1MHz Cres 0 50 100 150 TC(C) 1 0.1 1 10 100 VCE(V) page 6/15 STGP15M120F3 Electrical characteristics (curves) Figure 13. Gate charge vs gate-emitter voltage GIPD291020141517FSR VGE(V) VCC = 960 V IC = 15 A IG = 1 mA 16 Figure 14. Switching energy vs collector current GIPD291020141521FSR E(mJ) 2.5 VCC=600V, VGE=15V Rg=22, Tj=175C Eon 2 12 Eoff 1.5 8 1 4 0.5 0 0 10 20 30 Qg(nC) 50 40 Figure 15. Switching energy vs gate resistance GIPD291020141526FSR E(mJ) VCC=600V, VGE=15V IC=15A, Tj=175C 1.8 Eon 0 0 5 10 15 20 Figure 16. Switching energy vs junction temperature GIPD291020141532FSR E(mJ) 1.1 VCC=600V, VGE=15V IC=15A, Rg=22 1 1.6 30 IC(A) 25 0.9 Eon Eoff 1.4 Eoff 1.2 0.7 1 0.8 0.8 0.6 0 20 40 60 100 Rg() 80 Figure 17. Switching energy vs collector emitter voltage GIPD291020141536FSR E(mJ) VGE=15V, Tj=175C IC=15A, Rg=22 0.5 0 50 100 Figure 18. Short-circuit time and current vs VGE GIPD291020141543FSR Isc(A) tsc(s) Eon VCC 600V TJ 150 C 1.9 TJ(C) 150 Isc 40 1.5 Eoff 30 80 tsc 60 1.1 20 0.7 0.3 200 DS11255 - Rev 3 400 600 800 VCE(V) 10 9 40 10 11 12 13 14 15 20 VGE(V) page 7/15 STGP15M120F3 Electrical characteristics (curves) Figure 19. Switching times vs collector current t(ns) Figure 20. Switching times vs gate resistance GIPD291020141715FSR Tj=175C, Rg=22 GIPD291020141725FSR t(ns) VCC=600V, VGE=15V tf tf 100 100 tdoff tdoff tdon tdon 10 10 tr tr 1 0 5 VCC=600V, VGE=15V Tj=175C, IC=15A 10 15 20 1 0 30 IC(A) 25 20 40 60 80 100 Rg() Figure 21. Thermal impedance ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 DS11255 - Rev 3 -4 10 -3 10 -2 10 -1 10 tp (s) page 8/15 STGP15M120F3 Test circuits 3 Test circuits Figure 22. Test circuit for inductive load switching C A Figure 23. Gate charge test circuit A k L=100 H G E B B RG 3.3 F C G + k 1000 F VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 24. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC Td(on) Ton 10% Td(off) Tr(Ion) Tf Toff AM01506v1 DS11255 - Rev 3 page 9/15 STGP15M120F3 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. DS11255 - Rev 3 page 10/15 STGP15M120F3 TO-220 type A package information 4.1 TO-220 type A package information Figure 25. TO-220 type A package outline 0015988_typeA_Rev_21 DS11255 - Rev 3 page 11/15 STGP15M120F3 TO-220 type A package information Table 6. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS11255 - Rev 3 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 oP 3.75 3.85 Q 2.65 2.95 page 12/15 STGP15M120F3 Revision history Table 7. Document revision history Date Version 10-Sep-2015 1 Changes Initial release. Removed maturity status indication from cover page. The document status is production data. 17-Apr-2018 2 Added Section 2.1 Electrical characteristics (curves). Updated Section 4.1 TO-220 type A package information. Minor text changes 01-Aug-2018 DS11255 - Rev 3 3 Updated Table 5. Switching characteristics (inductive load). page 13/15 STGP15M120F3 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS11255 - Rev 3 page 14/15 STGP15M120F3 IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2018 STMicroelectronics - All rights reserved DS11255 - Rev 3 page 15/15