STGP15M120F3 - STMICROELECTRONICS

123

TO-220

TAB

G(1)

C(2, TAB)

E(3)

G1C2TE3

Features

• 10 μs of minimum short-circuit withstand time

• VCE(sat) = 1.85 V (typ.) @ IC = 15 A

• Tight parameter distribution

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Maximum junction temperature: TJ = 175 °C

Applications

• Industrial drives

• UPS

• Solar

• Welding

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

Product status link

STGP15M120F3

Product summary

Order code STGP15M120F3

Marking G15M120F3

Package TO-220

Packing Tube

Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package

STGP15M120F3

Datasheet

DS11255 - Rev 3 - August 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

1Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 1200 V

Continuous collector current at TC = 25 °C 30 A

Continuous collector current at TC = 100 °C 15 A

ICP(1) Pulsed collector current 60 A

VGE Gate-emitter voltage ±20 V

PTOT Total dissipation at TC = 25 °C 259 W

Tstg Storage temperature range -55 to 150 °C

TJOperating junction temperature range -55 to 175 °C

1. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case 0.58

°C/W

RthJA Thermal resistance junction-ambient 62.5

STGP15M120F3

Electrical ratings

DS11255 - Rev 3 page 2/15

2Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA 1200 V

VCE(sat) Collector-emitter saturation voltage

VGE = 15 V, IC = 15 A 1.85 2.3

VGE = 15 V, IC = 15 A,

TJ = 125 °C 2.1

VGE = 15 V, IC = 30 A,

TJ = 175 °C 2.2

VGE(th) Gate threshold voltage VCE = VGE, IC = 500 μA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 25 μA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

- 985 - pF

Coes Output capacitance - 118 - pF

Cres Reverse transfer capacitance - 38 - pF

QgTotal gate charge VCC = 960 V, IC = 15 A,

VGE = 0 to 15 V

(see Figure 23. Gate charge

test circuit)

- 53 - nC

Qge Gate-emitter charge - 8 - nC

Qgc Gate-collector charge - 32 - nC

Table 5. Switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 600 V, IC = 15 A,

VGE = 15 V, RG = 22 Ω,

(see Figure 22. Test circuit for

inductive load switching)

- 26 - ns

trCurrent rise time - 12 - ns

(di/dt)on Turn-on current slope - 1000 - A/μs

td(off) Turn-off delay time - 122 - ns

tfCurrent fall time - 163 - ns

Eon(1) Turn-on switching energy - 0.55 - mJ

Eoff(2) Turn-off switching energy - 0.85 - mJ

Ets Total switching energy - 1.4 - mJ

STGP15M120F3

Electrical characteristics

DS11255 - Rev 3 page 3/15

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 600 V, IC = 15 A,

VGE = 15 V, RG = 22 Ω,

TJ = 175 °C

(see Figure 22. Test circuit for

inductive load switching)

- 25 - ns

trCurrent rise time - 14 - ns

(di/dt)on Turn-on current slope - 857 - A/μs

td(off) Turn-off delay time - 136 - ns

tfCurrent fall time - 270 - ns

Eon(1) Turn-on switching energy - 1.1 - mJ

Eoff(2) Turn-off switching energy - 1.13 - mJ

Ets Total switching energy - 2.23 - mJ

tsc Short-circuit withstand time

VCC ≤ 600 V, VGE = 15 V,

TJstart = 150 °C 10 - μs

1. Including the recovery of the external diode. The diode is the same of the co-packed STGWA15M120DF3 device.

2. Including the tail of the collector current.

STGP15M120F3

Electrical characteristics

DS11255 - Rev 3 page 4/15

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

Ptot

150

100

050 100

(W)

200

150 TC(°C)

250 VGE ≥ 15 V, TJ ≤ 175 °C

GIPD271020141420FSR

Figure 2. Collector current vs case temperature

050 100

(A)

150 TC(°C)

VGE ≥ 15 V, TJ ≤ 175 °C

GIPD291020141132FSR

Figure 3. Output characteristics (TJ = 25 °C)

0 1 3

(A)

2 4

VCE(V)

11V

13V

VGE=15V

GIPD291020141140FSR

Figure 4. Output characteristics (TJ = 175°C)

0 1 3

(A)

2 4

VCE(V)

11V

13V

VGE=15V

GIPD291020141151FSR

Figure 5. VCE(sat) vs junction temperature

VCE(sat)

2.0

1.2

-50 0100

(V)

50 150

2.4

TC(°C)

1.6

2.8

VGE=15V

IC=7.5A

IC=30A

IC=15A

3.2

GIPD291020141158FSR

Figure 6. VCE(sat) vs collector current

1.6

0.80515

10 20

2.0

IC(A)

1.2

2.4

VGE=15V Tj=175°C

Tj=25°C

Tj=-40°C

VCE(sat) (V)

2.8

3.2

GIPD291020141315FSR

STGP15M120F3

Electrical characteristics (curves)

DS11255 - Rev 3 page 5/15

Figure 7. Collector current vs switching frequency

(A)

10 f(kHz)

TC=80°C

TC=100°C

Rectangular current shape,

(duty cycle=0.5, Vcc= 600V Rg=22Ω,

Vge=0/15V

, Tj=175 °C)

GIPD291020141321FSR

Figure 8. Safe operating area

(A)

10 VCE(V)

10µs

100µs

1ms

100

Single pulse, Tc=25°C

Tj<175°C, VGE=15V

1µs

1000

GIPD291020141330FSR

Figure 9. Transfer characteristics

(A)

5VGE(V)

Tj=175°C

Tj=25°C

9 11

VCE = 8V

GIPD291020141347FSR

Figure 10. Normalized VGE(th) vs junction temperature

VGE(th)

0.8

1.1

-50

(norm)

TC(°C)

0.7 0

0.9

1.0

50 100 150

VCE=VGE

IC=500µA

GIPD291020141405FSR

Figure 11. Normalized V(BR)CES vs junction temperature

V(BR)CES

1.04

0.88

-50

(norm)

TC(°C)

1.0

0 50 100 150

IC=2mA

0.92

0.96

GIPD291020141443FSR

Figure 12. Capacitance variations

C(pF)

0.1 VCE(V)

1000

110

100

Cies

Coes

Cres

1100

f= 1MHz

GIPD291020141507FSR

STGP15M120F3

Electrical characteristics (curves)

DS11255 - Rev 3 page 6/15

Figure 13. Gate charge vs gate-emitter voltage

VGE(V)

00Qg(nC)

20 40

10 5030

VCC = 960 V

IC = 15 A

IG = 1 mA

GIPD291020141517FSR

Figure 14. Switching energy vs collector current

E(mJ)

00IC(A)

0.5

5 10

15 20

VCC=600V, VGE=15V

Rg=22Ω, Tj=175°C

1.5

2.5

Eon

Eoff

25 30

GIPD291020141521FSR

Figure 15. Switching energy vs gate resistance

E(mJ)

0Rg(Ω)

20 40

0.8

1.2

60 80

VCC=600V, VGE=15V

IC=15A, Tj=175°C

1.4

1.6

1.8

Eon

Eoff

100

GIPD291020141526FSR

Figure 16. Switching energy vs junction temperature

E(mJ)

TJ(°C)

0.6

0.5

0.7

100

VCC=600V, VGE=15V

IC=15A, Rg=22Ω

0.8

0.9

Eon

Eoff

150

1.1

GIPD291020141532FSR

Figure 17. Switching energy vs collector emitter voltage

E(mJ)

200 VCE(V)

1.1

400 600

0.3

1.9

800

VGE=15V, Tj=175°C

IC=15A, Rg=22Ω

Eon

Eoff

0.7

1.5

GIPD291020141536FSR

Figure 18. Short-circuit time and current vs VGE

tsc(µs)

9VGE(V)

10 11

10 12

VCC ≤ 600V

TJ ≤150 °C Isc

tsc

13 14 15

Isc(A)

GIPD291020141543FSR

STGP15M120F3

Electrical characteristics (curves)

DS11255 - Rev 3 page 7/15

Figure 19. Switching times vs collector current

t(ns)

0IC(A)

510

115 20

VCC=600V,

Tj=175°C,

VGE=15V

Rg=22Ω

tdoff

tdon

25 30

100

GIPD291020141715FSR

Figure 20. Switching times vs gate resistance

t(ns)

0Rg(Ω)

20 40

60 80

VCC=600V,

Tj=175°C,

VGE=15V

IC=15A

tdoff

tdon

100

GIPD291020141725FSR

Figure 21. Thermal impedance

10 10 10 10 10 tp(s)

-5 -4 -3 -2 -1

10-2

10-1

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-c

δ=tp/t

Single pulse

δ=0.5

ZthTO2T_B

STGP15M120F3

Electrical characteristics (curves)

DS11255 - Rev 3 page 8/15

3Test circuits

Figure 22. Test circuit for inductive load switching

A A

C3.3

µF 1000

µF

L=100 µH

D.U.T

AM01504v1

Figure 23. Gate charge test circuit

AM01505v1

Figure 24. Switching waveform

AM01506v1

90%

10%

90%

10%

VCE

Td(on)

Ton

Tr(Ion)

Td(off)

Toff

Tr(Voff)

Tcross

90%

10%

STGP15M120F3

Test circuits

DS11255 - Rev 3 page 9/15

4Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions

and product status are available at: www.st.com. ECOPACK® is an ST trademark.

STGP15M120F3

Package information

DS11255 - Rev 3 page 10/15

4.1 TO-220 type A package information

Figure 25. TO-220 type A package outline

0015988_typeA_Rev_21

STGP15M120F3

TO-220 type A package information

DS11255 - Rev 3 page 11/15

Table 6. TO-220 type A package mechanical data

Dim.

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.55

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10.00 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13.00 14.00

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

STGP15M120F3

TO-220 type A package information

DS11255 - Rev 3 page 12/15

Revision history

Table 7. Document revision history

Date Version Changes

10-Sep-2015 1 Initial release.

17-Apr-2018 2

Removed maturity status indication from cover page. The document status is

production data.

Added Section 2.1 Electrical characteristics (curves).

Updated Section 4.1 TO-220 type A package information.

Minor text changes

01-Aug-2018 3 Updated Table 5. Switching characteristics (inductive load).

STGP15M120F3

DS11255 - Rev 3 page 13/15

Contents

1Electrical ratings ..................................................................2

2Electrical characteristics...........................................................3

2.1 Electrical characteristics (curves) .................................................5

3Test circuits .......................................................................9

4Package information..............................................................10

4.1 TO-220 type A package information ..............................................10

Revision history .......................................................................13

STGP15M120F3

Contents

DS11255 - Rev 3 page 14/15

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STGP15M120F3

DS11255 - Rev 3 page 15/15