SHD626051D - Sensitron Semiconductor

• 221 WEST INDUSTRY COURT • DEER PARK, NY 1172 9-4681 • PHONE ( 631) 5 86-7600 • FAX (631) 242-9798 •

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4074, REV. G

HERMETIC SILICON CARBIDE RECTIFIER

DESCRIPTION: A 600-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257

PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL

FEATURES:

• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR

• High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at

high frequency; use part number prefix SHDG

• Ceramic Seal Option – For ceramic seals use part number prefix SHDC

MAXIMUM RATINGS ALL RATING S ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.

RATING SYMBOL MAX. UNITS

PEAK INVERSE VOLTAGE PIV 600 Volts

MAXIMUM DC OUTPUT CURREN T (With TC = 65 OC for P and N suffixes) IO 20 Amps

MAXIMUM DC OUTPUT CURREN T (With TC = 65 OC for Single and D suffixe s) IO 10 Amps

MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG

(t = 8.3ms, Sine) per leg, TC = 25 OC IFRM 50 Amps

MAXIMUM POWER DISSIPATION, TC = 25 OC, Pd 40 W

MAXIMUM THERM AL RE SISTAN CE, Jun c tion to Case PER LEG RθJC 2.5 °C/W

MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE* Top, Tstg -55 to 200 °C

Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the

packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be

performed to 175C.

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC TYP MAX. UNITS

MAXIMUM FORWARD VOLTAGE DROP TJ = 25°C

Pulsed (If = 10 A PER L EG) V f TJ = 150 °C

1.65

2.05 1.80

2.20

Volts

MAXIMUM FORWARD VOLTAGE DROP TJ = 25°C

Pulsed (If = 6 A PER LEG) Vf TJ = 150 °C

1.35

1.60 1.45

1.70

Volts

MAXIMUM REVERSE CURRENT (Ir @ 600V PIV PER LEG) TJ = 25 °C

TJ = 150 °C

0.04

0.08 0.15

0.50

JUNCTION CAPACITANCE CT) (Vr =5V) per leg CT 250 350 pF

TOTAL CAPACITIVE CHARGE QC per leg

(VR=600V IF=20A di/dt=500A/μs TJ=25°C) Thi s is design in fo rma tion on ly 35 N/A nC

SHD626051

SHD626051P

SHD626051N

SHD626051D

• 221 WEST INDUSTRY COURT • DEER PARK, NY 1172 9-4681 • PHONE ( 631) 5 86-7600 • FAX (631) 242-9798 •

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4074, REV. G

SHD626051

SHD626051P

SHD626051N

SHD626051D

• 221 WEST INDUSTRY COURT • DEER PARK, NY 1172 9-4681 • PHONE ( 631) 5 86-7600 • FAX (631) 242-9798 •

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4074, REV. G

MECHANICAL DIMENSIONS

TO-257

123

.200

.190 (5.08

4.82)

.045

.035 (1.14

0.89)

.120(3.05) BSC

.430

.410 (10.92

10.41)

.420

.410 (10.67

10.41)

.665

.645 (16.89

16.38)

.537

.527 (13.64

13.39)

1.132

1.032 (28.75

26.21)

.035

.025 (0.89

0.63)

3 Places

.100(2.54) BSC

2 Places

.150

.140 (3.81

3.56) Dia.

PINOUT TABLE

TYPE PIN 1 PIN 2 PIN 3

SINGLE RECTIFIER CATHODE ANODE ANODE

DUAL RECTIFIER/COMMON CATHODE (P) ANODE 1 COMMON

CATHODE ANODE 2

DUAL RECTIFIER/COMMON AN ODE ( N) CATHODE 1 COMMON

ANODE CATHODE 2

DUAL RECTIFIER/DOUBLER (D) ANODE ANODE/

CATHODE CATHODE

SCHEMATIC

1 2 3 1 2 3 1 2 3 3 2 1

SINGLE COMMON CATHODE COMMON ANODE DOUBLER

Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche

capabilities of the device are limited.

Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially

damaging conditions in their applications.

SHD626051

SHD626051P

SHD626051N

SHD626051D

• 221 WEST INDUSTRY COURT • DEER PARK, NY 1172 9-4681 • PHONE ( 631) 5 86-7600 • FAX (631) 242-9798 •

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4074, REV. G

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the

datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical

equipment , and safety equipment) , safety should be ensured by u sing semiconductor devices that f eature assure d s afety or by me an s of users’

fail-safe precautions or other arrangement .

3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of

the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any

other problems that may result from applications of information, products or circuits described in the datasheets.

4- In no event shall Sensitron Semiconductor be li able for any failure in a semiconductor device or any secondary da mage resulting from use at

a value exceeding the absolute maximum rating.

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron

Semiconductor.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder

maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When

exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.

SHD626051

SHD626051P

SHD626051N

SHD626051D