NTE272 (NPN) & NTE273 (PNP)
Silicon Darlington Complementary
Power Amplifiers
Description:
The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type
case designed for use in complementary amplifiers and driver applications.
Features:
DHigh DC Current Gain:
hFE = 25,000 (Min) @ IC = 200mA
= 15,000 (Min) @ IC = 500mA
DCollector–Emitter Breakdown Voltage:
V(BR)CES = 40V @ IC = 500mA
DLow Collector–Emitter Saturation Voltage:
VCE(sat) = 1.5V @ IC = 1A
DMonolithic Construction for High Reliability
Absolute Maximum Ratings:
Collector–Emitter Voltage (Note 2), VCEO 40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCES 40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA = +25°C), PD1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25°C 8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25°C 80mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–55 to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55 to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RthJA 125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 12.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. NTE273 is a discontinued device and no longer available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele-
ments are identical. V(BR)CES is tested in lieu of V(BR)CEO in order to avoid errors caused
by noise pickup. The voltage measured during the V(BR)CES test is the V(BR)CEO of the output
transistor.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CES IC = 100µA, VBE = 0 40 – – V
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 50 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 12 – – V
Collector Cutoff Current ICBO VCB = 30V, IE = 0 – – 100 nA
Emitter Cutoff Current IEBO VEB = 10V, IC = 0 – – 100 nA
ON Characteristics (Note 3)
DC Current Gain |hfe| IC = 200mA, VCE = 5V 25,000 65,000 150,000
IC = 500mA, VCE = 5V 15,000 35,000 –
IC = 1A, VCE = 5V 4,000 12,000 –
Collector–Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 2mA –1.2 1.5 V
Base–Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 2mA –1.85 2.0 V
Base–Emitter ON Voltage VBE(ON) IC = 1A, VCE = 5V –1.7 2.0 V
Dynamic Characteristics
Small–Signal Current Gain hFE IC = 200mA, VCE = 5V,
f = 100MHz, Note 2 1.0 3.2 –
Collector–Base Capacitance Ccb VCB = 10V, IE = 0, f = 1MHz –2.5 6.0 pF
Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
B
C
E
B
C
E
NTE272 Schematic
NTE273 Schematic
Uniwatt darlington transistors can be used in any
number of low power applications, such as relay
drivers, motor control and as general purpose
amplifiers. As an audio amplifier these devices,
when used as a complementary pair, can drive
3.5 watts into a 3.2ohm speaker using a 14 volt
supply with less than one per cent distortion. Be-
cause of the high gain the base drive requirement
is as low as 1mA in this application. They are also
useful as power drivers for high current applica-
tion such as voltage regulators. TO202N
Collector Connected to Tab
EBC
.050 (1.27)
.380 (9.65) Max
.280 (7.25) Max
.128 (3.28) Dia
.200 (5.08)
.100 (2.54)
.218
(5.55)
.160
(4.06)
.475
(12.0)
Min .995
(25.3)
