NE C/ CALIFORNIA SBE D Ml BY2741L4 OO0e4e22 BOS MBNECC NEC T3l-14 NE64500 NPN SILICON HIGH | NE64508 FREQUENCY TRANSISTOR Negabee FEATURES e HIGH fr fr = 8.5 GHz e LOW NOISE FIGURE 1.3 dB at 1.5 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 14 GB at 1.5 GHz 12 GB at 2 GHz e SPACE QUALIFIED OUTLINE DIMENSIONS Units in mm) NE64500 (CHIP) (Chip Thickness: 16020 pm) 03 HOOD OUTLINE 35 38MN 3-76 DESCRIPTION AND APPLICATIONS The NE645 series of NPN silicon transistors Is designed for low-noise amplifier and medium power oscillator applica- tions. The NE645 series employs a naw NEC proprietary fabri- cation technique which provides excellent noise figures at high currents, resulting In superior assoclated gains and a very wide dynamic range. The NE645 is available in a chip form or three rugged hermetically sealed strip-line packages. Reliability is assured by quality control and test procedures patterned after MIL-S-19500 and MIL-STD-750. The NEG4500 (chip) employs arsenic doped emitters and NEC's reliable Pt/Si-Ti-Pt-Au metallization system. The NE64535 (MICRO-X) is a low cost, hermetically sealed pack- age designed for large volume Industrial and military micro- wave products. The NE64508 is in a low-loss, hi-ral package capable of meeting the rigors of space qualification. The NE64587 is in a common collector configuration suitable for oscillator applications up to 10 GHz. OUTLINE 08 E 062005 4 somn | ca PAZ a E} 062005 +03 +008 20 -02 o1* 003 [ra203 JT OUTLINE 87 50 MN 50MIN 35203 NECNE C/ CALIFORNIA SBE D MM B427414 0002423 544 MMNECC NE64500, NE64508, NE64535, NE64587 PERFORMANCE SPECIFICATIONS ta = 25C) 1 PART NUMBER NE64500 NE64508 NE64535 NE64587 EIAJ REGISTERED NUMBER 2802273 2802585 PACKAGE OUTLINE 00 (CHIP) 08 35 (MICRO-X) 87 SYMBOLS|PARAMETERS AND CONDITIONS |UNITS| MIN | TYP | MAX| MIN | TYP |} MAX| MIN | TYP | MAX] MIN] TYP | MAX fr Gain Bandwidth Product at VcE = 8V,Ic = 20mA GHz 8.5 8.5 8.5 8.5 |S21e|? Insertion Power Gain at VcE = 8V, Ic = 20 mA, = 1 GHz dB 18 18 18 f = 2 GHz dB 10 12 10 12 10 | 11 f = 4 GHz dB 65 6.5 6.5 NFMIN Minimum Noise Figure? at VcE = 8V, Ic = 7 mA, f = 0.5 GHz dB 0.9 0.9 f = 1.5 GHz dB 1.3 1.4 f = 2 GHz dB 16 16] 2 1.6 | 25 GA Associated Gain at VcE = 8V, Ic = 7 mA, f = 1.5 GHz dB 14 14 13 f = 2 GHz dB 11 12 11 12 10 | 11 MAG Maximum Available Gain? at Vce = 8V, Ic = 10 mA, f = 2 GHz dB 16 16 15 f = 4GHz dB 1 10 Posc Oscillator Output Power at VcE = 10 V, Ic = 40 mA, f = 6 GHz mW 110 110 ELECTRICAL CHARACTERISTICS 1 = 25c) 1 PART NUMBER NE64500 NE64508 NE64535 NE64587 EIAJ REGISTERED NUMBER 2S8C2273 28C2585 PACKAGE OUTLINE 00 (CHIP) 08 35 (MICRO-X) 87 SYMBOLS/|PARAMETERS AND CONDITIONS |UNITS| MIN | TYP } MAX| MIN | TYP | MAX! MIN TYP | MAX] MIN | TYP | MAX IcBo Collector Cutoff Current at Ves = 8V,le = 0 pA 0.1 0.1 0.1 0.1 lEBO Emitter Cutoff Current at Ves = 1V, Ic =0 pA 1 1 1 1 hFe Forward Current Gain at VceE = 8V,Ic = 7mA 50 | 100 | 250 | 50 | 100] 250] 50 | 100 | 250 | 50 | 100 } 250 Cos Collector to Base Capacitance at Ves = 10V, le = 0, f = 1 MHz pF 02/1 06 0.2 | 06 0.2 | 06 0.2 | 06 RTH Thermal Resistance (Junction-to-Case) | C/W 75 85 85 75 Pr Tota! Power Dissipation mw 400 400 400 400 Notes: 1. Electronic Industrial Association of Japan. 2. Input and output are tuned for optimum noise figure. 3. MAG = [Svie|2 1 1 [4 - S14] [4 - See? 4. the guard terminal. 5. NE64635 - Tc = 166C NE64508 - Tc = 150C NE64587 - Tc = 170C 3-77 Maximum Available Gain (MAG) is calculated from the device S-Parameters using the equation, The Case Temperature, Tc, when measuring Total Power Dissipation for the following devices are: Cos measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected toNE C/ CALIFORNIA NE6450U, NE64508, NE64535, NE64587 SKE D MM bYA74R4 OOOR4AY 480 MMNECC ABSOLUTE MAXIMUM RATINGS ta = 250) SYMBOLS PARAMETERS UNITS} RATINGS VeBo Collector fo Base Voltage Vv 25 VcEO Collector to Emitter Vottage| V 12 Veso Emitter to Base Voltage* Vv 1.5 Ic Collector Current mA 65 Ts Junction Temperature C 200 TsT@ Storage Temperature C |-65to +200** *Veeo rating for NE64500 and NEG64587 is 3 V. **TsTa for NE6G4535 Is -65C to 150C because leads are Sn plated and may tarnish above 150C. Once soldered into a circuit, the unit can be stored at 200C. TYPICAL DEVICE CHARACTERISTICS (ta = 25c) Total Power Dissipation, Pr (mW) Gain Bandwidth Product, fr (GHz) 3 8 3 POWER DERATING CURVE Ambient Temperature, TA (C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VcE = 8V 2 3 5 7 10 Collector Current, Ic (mA) 20 NE64508, 35 With Infinite Heat Sink NEG4508%. ATH GA) = 400 C Free Air | P| 1 NE64535 ATH (J-C) Free Air . = 85 C | RTH (J-A) = 390 C/W N 0 50 100 150 200 ou 3-78 CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE ~ o ~ a o Nn Collector to Base Capacitance, Ccs (pF) o o o ~ 1 2 3 7 10 Collector to Base Voltage, VcB (V) DC CURRENT GAIN vs. COLLECTOR CURRENT a 2 3 8 s s DC Forward Current Gain, hre 38 10 0203 05 1 #23 85710 0 Collector Current, Ic (mA)NE C/ CALIFORNIA SBE D MM 6427424 O002425 317 MMNECC NE64500, NE64508, NE64535, NE64587 TYPICAL PERFORMANCE CHARACTERISTICS (a = 25c) INSERTION GAIN vs. INSERTION GAIN vs. FREQUENCY COLLECTOR CURRENT 20 20 VcE = VcE = 8V 1 _ Ic = 10mA _ o 16 S 16 NN Nn w w nH 12 3 |Sate|2 2 a a Oo 8 o 8 S @ Ea 4 0 0 1 2 3 5 7 10 1 2 3 5 7 10 20 30 Frequency, f (GHz) Collector Current, Ic (mA) ASSOCIATED GAIN AND ASSOCIATED GAIN AND OPTIMUM NOISE FIGURE OPTIMUM NOISE FIGURE vs. FREQUENCY vs. COLLECTOR CURRENT 5 VcE = 8V Vee = 8V Ic = 7mA f = 2 GHz = = 4 a _ co _ Zz a z 9 5 . 5 = 2 2 @ o g 5 5 3 iz z 2k 6 2 2 fy 3 2 9 Q o 8 o Zz 8 Zz < <= 1 0 0 0.1 0203 O85 1 2 3 1 2 3 5 7 10 20 30 Frequency, f (GHz) Collector Current, Ic (mA) NE64508 OUTPUT POWER AT THE 1 dB NE64587 COMPRESSION POINT vs. OSCILLATOR OUTPUT POWER COLLECTOR CURRENT vs. FREQUENCY = 4 ~ Vee = 10V a & Ic = 40 mA Zz Go 9 28 8 Se +S 2c S &s = 5 g g go i 8 3 g 3 r Oo 6 10 14 18 22 26 6 7 8 ) 10 Collector Current, Ic (mA) Frequency, f (GHz) 3-79NE C/ CALIFORNIA SbE D WM b4e741L4 OOOe42b 2535 MMNECC NE64500, NE64508, NE64535, NE64587 TYPICAL COMMON EMITTER SCATTERING PARAMETERS NE64500 Coordinates In Ohms Frequency In GHz ~K0 (Vce = 10 V, lc = 10 mA) (measured on alumina carrier) S-MAGN AND ANGLES: - VCE = 10 V, IC = 5mA - FREQUENCY (MHz) Si Sa S12 S22 500 69 ~75 10.60 129 .047 5 72 -29 1000 58 -112 6.30 108 061 48 56 -38 2000 50 -140 3.44 89 076 53 47 -42 3000 48 =186 231 71 094 BB 47-56 4000 49 -166 1.79 62 -118 65 46 -62 VCE = 10V, Ic = 10mA 500 58 -99 13.88 119 037 54 59 -36 1000 1-130 754 101 049 5 45 ~39 2000 AZ =182 3.97 86 070264 39 0-42 3000 45 ~164 2.61 71 .097 68 40 ~56 4000 46002C172 2.04 62 12800274 39 8-60 VCE = 10V, IC = 20mA 500 51 -121 15.81 111 .028 57 48 ~38 1000 48 ~144 8.14 97 042 64 38 -37 2000 AG -160 4.21 84 .069 73 35 ~40 3000 45 169 2.74 70 099 74 36 -5 4000 46 =175 2.14 61 -132 74 36 -59 NOISE FIGURE TEST CIRCUIT TEST CIRCUIT FORf <4 GHz AIL RYT HP MiCROLAB ALFORD HP RYT Wd CEL. AIL 07616 300288 11590R N3i1A 8052-57 11500A 300288 MIG IF AMP 7380 HT Cc SOURCE Tee] Tea Fy] bur}| tunes F-) Tee awe |] ontTon l | | I I LE = ke = SOURCE GENERAL MICROWAVE Li = 0.4 dB, f = 2.5 GHz MODEL 522NE C/ CALIFORNIA SbE D MM 6427424 OO02427 LIT MMNECC NE64500, NE64508, NE64535, NE64587 TYPICAL COMMON EMITTER SCATTERING PARAMETERS +180 -150 NE64508 Coordinates in Ohms Frequency in GHz me ~f60 (VcE = 8 V, Ic = 10 mA) S-MAGN AND ANGLES: VCE = 8V,IC = 7mA FREQUENCY (MHz) Su Sai S12 S22 500 82 -84 4.27 128 042 38 .70 ~62 1000 77 -163 3.76 91 .050 38 51 -58 2000 63 -172 2.81 68 055 33 51 -60 2500 .60 -179 2.80 57 089 44 55 -67 3000 59 175 2.44 48 071 22 56 -72 3500 .60 167 2.15 40 069 25 57 -78 4000 56 160 1.85 30 .072 34 60 -82 4500 54 150 1.62 23 .067 31 .60 ~85 5000 51 148 1.49 19 085 45 65 -88 5500 52 142 1.39 10 103 38 67 -94 6000 50 131 1.27 4 -108 36 .68 -97 VCE = 8V,IC = 10mA 500 78 -92 5.82 123 .035 37 63 -65 1000 72 -162 5.01 88 .045 24 46 -58 2000 63 -177 2.84 67 .052 41 47 -61 2500 62 178 2.85 57 .060 45 49 -66 3000 .60 169 2.66 47 .070 44 54 -70 3500 59 162 2.35 39 082 4 54 -79 4000 55 157 2.02 32 .077 45 56 -83 4500 51 147 1.75 24 080 43 57 -87 5000 52 146 1.67 20 .080 51 60 -87 5500 51 139 1.53 11 106 44 63 -93 6000 50 129 1.42 4 118 40 65 -97 3-81NE C/ CALIFORNIA SLE D MM G4274L4 0002428 024 MMNECC NE64500, NE64508, NE64535, NE64587 TYPICAL COMMON EMITTER SCATTERING PARAMETERS NE64535 Coordinates in Ohms ; Frequency In GHz "Oe -K0 (Vce = 8 V, Ic = 7 mA) S-MAGN AND ANGLES: VcE=8V,IC = 7mA FREQUENCY (MHz) Siu Sat G12 S22 k 500 61 ~108 11.03 115 03 37 64 -37 0.53 1000 64 153 6.36 89 05 39 49 ~44 0.87 2000 53 173 3.45 64 07 43 44 ~50 1.08 3000 54 149 2.36 42 -10 44 43 -64 1.16 4000 56 131 1.79 24 12 43 4 ~80 1.13 5000 60 115 1.44 7 15 39 46 -98 1.02 6000 63 95 1.26 -10 -18 33 48 -113 0.89 VCE = 8V,IC = 10mA 500 56 -122 12.34 110 03 41 58 ~39 0.67 1000 52 -161 6.83 87 04 42 44 ~42 1.11 2000 52 168 3.69 63 07 48 40 ~49 1.13 3000 53 146 2.49 42 10 47 40 ~63 1.16 4000 56 129 1.89 23 -12 44 Al -81 1.12 5000 59 114 1.53 7 18 39 44 -98 1.03 6000 63 94 1.34 ~10 -18 46 -112 0.88 VCE = 8V,IC = 20mA 500 63 ~145 13.79 101 02 40 48 ~38 0.97 1000 52 ~176 7.26 82 03 54 39 -38 1.42 2000 52 162 3.79 60 06 62 39 -46 1.23 3000 53 125 2.58 23 10 38 38 ~77 1.12 4000 58 102 1.96 -0 13 26 39 ~102 1.07 5000 60 81 1.62 -23 16 13 At ~125 0.94 6000 64 56 1.37 -47 19 0 42 ~148 0.86 VCE = 8V,ICc = 30mA 500 52 ~156 13.77 97 02 44 45 -33 1.19 1000 53 179 7.13 80 03 60 38 ~34 1.64 2000 53 158 3.68 69 06 63 40 ~44 1.24 3000 54 140 2.52 39 40 57 40 -61 1.15 4000 65 124 1.89 21 1 5i 42 ~79 1.09 5000 59 109 1.55 4 16 44 43 ~96 0.98 6000 65 89 1.33 -14 19 37 44 ~113 0.84 3-82NE C/ CALIFORNIA SbE D MM 6427424 0002429 Toe MNECC NE64500, NE64508, NE64535, NE64587 TYPICAL COMMON COLLECTOR SCATTERING PARAMETERS NE64587 Coordinates in Ohms Frequency in GHz ae 150 (Vec = -8 V, Ic = 40 mA) S-MAGN AND ANGLES: VEC = -8V,IC = 10mA FREQUENCY (MHz) Si $21 S12 S22 2000 92 -59 4.70 44 37 40 79 120 3000 87 -85 1.58 -64 50 18 70 90 4000 81 -115 1.50 -79 .60 2 71 78 5000 72 ~135 1.35 -100 .69 -19 68 43 6000 66 ~163 1.23 -115 76 -39 65 22 7000 60 172 1.09 -135 84 -63 61 -1 8000 .60 148 1.02 ~162 90 -79 55 -18 9000 58 114 93 ~167 0 -101 46 -43 10000 58 92 87 180 94 -119 39 ~59 11000 56 60 80 155 94 ~146 32 -82 42000 58 40 73 137 87 -167 19 -94 VEC = -8V,IC = 20mA 2000 92 -60 1.74 -44 36 41 85 125 3000 91 -84 1.65 ~64 49 19 76 93 4000 82 -113 1.55 -79 .60 2 v7 80 5000 74 ~133 1.44 -101 70 -21 72 42 6000 67 ~-160 1.30 ~116 AT -41 69 20 7000 60 175 1.14 -136 81 -66 64 -4 8000 58 154 1.08 -153 86 -82 59 -20 9000 57 117 1.00 -169 85 -103 51 -43 10000 56 92 92 177 89 -119 AT ~56 11000 55 58 83 152 88 -145 42 -74 12000 58 35 75 135 .84 -168 33 -82 VEC = -8V,IC = 40mA 2000 89 -61 1.82 -47 38 33 85 118 3000 83 -91 1.75 -70 52 11 81 90 4000 75 -120 1.62 -90 62 -9 a7 66 5000 69 ~150 1.36 ~112 71 -32 71 42 6000 66 ~180 1.21 -132 9 -52 64 22 7000 66 155 1.09 ~148 84 -74 56 2 8000 67 129 98 -168 88 -93 47 ~15 9000 63 104 84 179 .90 -116 38 -38 10000 61 84 76 159 96 -137 31 -63 11000 59 63 68 144 95 -166 23 -95 12000 54 49 67 132 95 177 .20 -140 3-83