REVISIONS DOC. NO. SPC-FO0S5 * Effective: 7/8/02 * DCP No: 1398 Si ROTE, WEERTES Ne STON, ss rua mu it i c om WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC DCP #| REV DESCRIPTION DRAWN| DATE |CHECKD| DATE |APPRVD| DATE TECHNOLOGY. p 1885 A RELEASED BYF | 02/08/06; HO | 2/6/06 | JWM | 2/6/06 SPCFO005.DWG Description: Plastic, NPN, TO220 power transistor General purpose amplifier and switching applications RoHS Features: Compliant Collector Emitter Saturation Voltage I=3A, =0.6A, Vop =1.2V (Max) D.C. Current Gain Ip=1A, Vop=4V hrp=25 (Min) Absolute Maximum Ratings: - - CollectorBase Voltage, Vorgs = 115V Dimensions| A B Cc 1D E F G H J K L M N 0 CollectorEmitter Voltage, Vosg = 100V Min. 14.42| 9.65 |5.56| [1.15] 3.75/ 2.29] 2.54 | 12.70/2.80| 2.05] - |. EmitterBase Voltage, Vego = SV Max. _|16.51[10.67|4.83]0.90|1.40| 3.88] 2.79] 3.43/0.56| 14.73|4.07 |2.92/31.24 Continuous Collector Current, Ib = 3A Base Current, = 1A Total Device Dissipation (Te = +25C), Pp = 40W Derate above 25C = 0.32mW/*C B Cc = Operating Junction Temperature Range, Ty = 65C to +150C | E Storage Temperature Range, Ty, = 65C to +150C H } F g NPN TI + Electrical Characteristics: (Tp= +25C unless otherwise specified) 3 Collector A o O Parameter | Symbol | Test Conditions | Min | Max | Unit | OFF Characteristics 2 Base N { ot 2 3 Oo CollectorEmitter Breakdown Voltage | Varyceo | Ie = 30mA, Ip = 0 Note 1 too] - | v L | | | CollectorBase Breakdown Voltage Vearyces Ib = 1mA, Vez = O 115 - Vv f yoty ot EmitterBase Breakdown Voltage Vear)EBO k = 1mA, k = 0 5 - V 1 Emitter K | | | Vee = 100V, Vee = O - . A Collector CutOff Current Ices & = 0.2 m | | | Iceo | Ven = S0V, bb = 0 - | 0.3 | mA Emitter Cut-Off Current Iso | Ves = SV, kb = 0 - | 1 | ma pL Jet eL ON Characteristics (Note 1) | G | =H | DC Current Gain Vee = 4V, Ip = 1A 25 - - 4 hee Vee = 4V, Ip = 3A ro! -| CollectorEmitter Saturation Voltage Vee (sat) kb = 3A, Ib = 0.6A | 1.2 V BaseEmitter On Voltage Vac(on) | Ic = SA, Vor = 4V - /1.8] V Pin Configuration: Small-Signal Characteristics 1. Base - - 2. Collector Current GainBandwidth Product fr Vee = 10V, Ip = O.5A, f = 1MHz 3 - MHz 4 3. Emitter SmallSignal Current Gain Ne Vee = 10V, Ip = 0.5A, f = 1kHz | 20 - - 2 3 4. Collector Note 1. Pulse Test: Pulse Width $ 300us, Duty Cycle S$ 2% DISCLAIMER: TOLERANCES: DRAWN BY: DATE: DRAWING TITLE: ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED | UAT ESS OTHERWISE BASAM YOUSIF 02/08/06] General Purpose Power Transistor, Plastic, TO-220, NPN HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE 7 ; BELIEVE TO BE ACCURATE AND RELIABLE. SINCE SPECIFIED, CHECKED BY: DATE: [ SIZE] DWG. NO. ELECTRONIC FILE REV CONDITIONS OF USE ARE BEYOND OUR CONTROL, THE USER SHALL DETERMINE THE SUITABILITY OF THE PRODUCT COR EEE RENCE HISHAM ODISH 2/6/06 | A BD241C 02H2179.DWG A FOR THE INTENDED USE AND ASSUME ALL RISK AND APPROVED BY: DATE: LIABILITY WHATSOEVER IN CONNECTION THEREWITH. PURPOSES ONLY. : LON . MILLIMETER j JEEF MCVICKER 2/6/06 | SCALE: NTS U.0.M.: MILLIMETERS SHEET: 1 OF 1