APM9932/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features * Pin Description N-Channel 20V/15A, RDS(ON)=12m(typ.) @ VGS=10V RDS(ON)=17m(typ.) @ VGS=4.5V * P-Channel S1 1 8 D1 S1 1 8 D G1 2 7 D1 G1 2 7 D S2 3 6 D2 S2 3 6 D G2 4 5 D2 G2 4 5 D -20V/-6A, RDS(ON)=30m(typ.) @ VGS=-4.5V RDS(ON)=45m(typ.) @ VGS=-2.5V * SO-8 SO-8 Super High Dense Cell Design for Extremely D1 Low RDS(ON) * * APM9932C APM9932 D D1 Reliable and Rugged SO-8 Package G1 Applications G1 S1 S1 N-Channel MOSFET * Power Management in Notebook Computer , G2 S2 N- and P-Channel MOSFET S2 Portable Equipment and Battery Powered Systems. G2 D2 D2 P-Channel MOSFET Ordering and Marking Information APM9932/C Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM9932/C K : APM9932/C XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1 www.anpec.com.tw APM9932/C Absolute Maximum Ratings Symbol (TA = 25C unless otherwise noted) Parameter N-Channel P-Channel VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage 16 12 ID* Maximum Drain Current - Continuous 15 -6 IDM Maximum Drain Current - Pulsed 30 -10 TA=25C 2.5 2.5 PD Maximum Power Dissipation TA=100C 1.0 1.0 TJ Maximum Junction Temperature TSTG Storage Temperature Range RjA Thermal Resistance - Junction to Ambient Unit V A W 150 C -55 to 150 C 50 C/W * Surface Mounted on FR4 Board, t 10 sec. Electrical Characteristics Symbol (TA = 25C unless otherwise noted) Parameter APM9932/C Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current N-Ch VGS=0V , IDS=250A 20 P-Ch -20 VDS=18V , VGS=0V N-Ch 1 VDS=-18V , VGS=0V P-Ch -1 VDS=VGS , IDS=250A N-Ch 0.6 1.3 VDS=VGS , IDS=-250A P-Ch -0.6 -1.3 VGS=16V , VDS=0V N-Ch 100 VGS=12V , VDS=0V P-Ch 100 VGS=10V , IDS=9A RDS(ON)a Drain-Source On-state VGS=4.5V , IDS=7A Resistance VGS=-4.5V , IDS=-6A VGS=-2.5V , IDS=-5A VSDa Notes a Diode Forward Voltage N-Ch P-Ch V 12 18 17 27 30 42 45 60 ISD=5A , VGS=0V N-Ch 0.6 1.3 ISD=-2A , VGS=0V P-Ch -0.6 -1.3 A V nA m V : Pulse test ; pulse width 300s, duty cycle 2% Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 2 www.anpec.com.tw APM9932/C Electrical Characteristics (Cont.) Symbol Parameter (TA = 25C unless otherwise noted) APM9932/C Test Condition Min. Typ. Max. Unit Dynamica Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time N-Channel N-Ch 14 22 VDS=10V , IDS= 6A P-Ch 19 25 VGS=4.5V N-Ch 5 P-Channel P-Ch 4.1 VDS=-4V , IDS=-1A N-Ch 2.8 VGS=-4.5V P-Ch 1.6 N-Channel N-Ch 6 12 VDD=10V , IDS=1A , P-Ch 23 45 VGEN=4.5V , RG=10 N-Ch 5 10 P-Ch 45 80 P-Channel N-Ch 16 40 VDD=-4V , IDS=-1A , P-Ch 45 90 VGEN=-4.5V , RG=10 N-Ch 5 20 P-Ch 32 55 N-Channel N-Ch 1225 VGS=0V , VDS=15V P-Ch 1400 Frequency=1.0MHz N-Ch 330 P-Channel P-Ch 520 VGS=0V , VDS=-4V N-Ch 220 Frequency=1.0MHz P-Ch 320 Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Notes a : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 3 www.anpec.com.tw APM9932/C Typical Characteristics N-Channel Output Characteristics Transfer Characteristics 20 20 VGS=3,4,5,6,7,8,9,10V ID-Drain Current (A) ID-Drain Current (A) VGS=2.5V 16 12 8 V GS=2V 15 10 TJ=125C 5 4 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) RDS(ON)-On-Resistance () 1.25 1.00 0.75 0.50 0.25 0 25 50 75 2.5 3.0 0.025 0.020 VGS=4.5V 0.015 V GS=10V 0.010 0.005 0.000 100 125 150 Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 2.0 0.030 IDS=250uA -25 1.5 On-Resistance vs. Drain Current 1.50 0.00 -50 1.0 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature VGS(th)-Threshold Voltage (V) (Normalized) TJ=-55C TJ=25C 0 4 8 12 16 20 ID - Drain Current (A) 4 www.anpec.com.tw APM9932/C Typical Characteristics (Cont.) N-Channel On-Resistance vs. Gate-to-Source Voltage 2.0 ID=15A 0.14 RDS(ON)-On-Resistance () (Normalized) RDS(ON)-On-Resistance () 0.16 On-Resistance vs. Junction Temperature 0.12 0.10 0.08 0.06 0.04 0.02 0.00 VGS=10V ID=15A 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 1 2 3 4 5 6 7 8 9 0.4 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 75 100 125 150 Capacitance 1800 V DS=10V ID=6A Frequency=1MHz 1500 8 Capacitance (pF) VGS-Gate-Source Voltage (V) 50 TJ - Junction Temperature (C) Gate Charge 10 25 6 4 Ciss 1200 900 600 Coss 2 300 Crss 0 0 5 10 15 20 25 0 30 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 5 www.anpec.com.tw APM9932/C Typical Characteristics (Cont.) N-Channel Single Pulse Power 20 80 10 70 60 TJ=150C Power (W) IS-Source Current (A) Source-Drain Diode Forward Voltage TJ=25C 1 50 40 30 20 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 0.01 1.2 0.1 VSD -Source-to-Drain Voltage (V) 1 10 30 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 6 www.anpec.com.tw APM9932/C Typical Characteristics P-Channel Output Characteristics Transfer Characteristics 10 10 -VGS=2,3,4,5,6,7,8,9,10V -ID-Drain Current (A) -ID-Drain Current (A) 8 6 -VGS=2V 4 2 8 6 4 TJ=125C 2 TJ=25C 0 0 1 2 3 4 5 6 7 0 0.0 8 0.5 -VDS - Drain-to-Source Voltage (V) TJ=-55C 1.0 1.5 2.0 2.5 3.0 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.08 RDS(ON)-On-Resistance () -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250uA 1.25 1.00 0.75 0.50 0.25 0.07 0.06 -VGS=2.5V 0.05 0.04 -VGS=4.5V 0.03 0.02 0.01 0.00 -50 -25 0 25 50 75 0.00 100 125 150 Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 0 1 2 3 4 5 6 7 8 9 10 -ID - Drain Current (A) 7 www.anpec.com.tw APM9932/C Typical Characteristics (Cont.) P-Channel On-Resistance vs. Gate-to-Source Voltage 1.8 -ID=6A RDS(ON)-On-Resistance () (Normalized) RDS(ON)-On-Resistance () 0.12 On-Resistance vs. Junction Temperature 0.10 0.08 0.06 0.04 0.02 0.00 1 2 3 4 5 6 7 8 9 -VGS=4.5V -ID=6A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 -25 -VGS - Gate-to-Source Voltage (V) 0 100 125 150 2000 -VDS=4V -ID=1A Frequency=1MHz 1600 Capacitance (pF) -VGS-Gate-Source Voltage (V) 75 Capacitance 4 3 2 1 0 50 TJ - Junction Temperature (C) Gate Charge 5 25 Ciss 1200 800 Coss 400 0 4 8 12 16 0 20 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 Crss 0 2 4 6 8 10 -VDS - Drain-to-Source Voltage (V) 8 www.anpec.com.tw APM9932/C Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Voltage Single Pulse Power 80 60 Power (W) -IS-Source Current (A) 10 1 TJ=150C TJ=25C 0.1 40 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 -VSD -Source-to-Drain Voltage (V) 1 10 30 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 9 www.anpec.com.tw APM9932/C Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 1 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1. 27B S C 0. 50B S C 8 8 10 www.anpec.com.tw APM9932/C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 11 pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C www.anpec.com.tw APM9932/C Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 1 F 5.5 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 0.5 12.4 0.2 2 0.2 12 0. 3 8 0.1 1.750.1 D D1 Po P1 Ao Bo Ko t 2.0 0.1 6.4 0.1 5.2 0. 1 1.55 +0.1 1.55+ 0.25 4.0 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 12 2.1 0.1 0.30.013 www.anpec.com.tw APM9932/C Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 13 www.anpec.com.tw