Dual Enhancement Mode MOSFET (N-and P-Channel)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM9932/C
• N-Channel
20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V
RDS(ON)=17mΩ(typ.) @ VGS=4.5V
• P-Channel
-20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V
RDS(ON)=45mΩ(typ.) @ VGS=-2.5V
••
••
• Super High Dense Cell Design for Extremely
Low RDS(ON)
••
••
• Reliable and Rugged
••
••
• SO-8 Package
Pin Description
Ordering and Marking Information
Features
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
SO-8
1
2
3
45
6
7
8S1
G1
S2
G2 D2
D2
D1
D1
G1
S1
D1 D1
APM9932/C
Handling Code
Temp. Range
Pac kage Co de
Pac kage Co de
K : SO-8
Operation Junction Tem p. Range
C : -55 to 1 50 C
Handling Code
T R : Tape & R eel
°
AP M9932/C K : APM9932/C
XXXXX XX XXX - Date Code
N-Channel MOSFET
P-Channel MOSFET
G2
S2
D2 D2
APM9932
SO-8
1
2
3
45
6
7
8S1
G1
S2
G2 D
D
D
D
G1
S1
G2
S2
D
APM9932C
N- and P-Channel
MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw2
APM9932/C
APM9932/C
Symbol Parameter Test Condition Min. Typ. Max. Unit
Static N-Ch 20
BVDSS Drain-Source Br eakdo wn
Voltage VGS=0V , IDS=250µAP-Ch -20 V
VDS=18V , VGS=0V N-Ch 1
IDSS Zero Gate Voltage Drain
Current VDS=-18V , VGS=0V P-Ch -1 µA
VDS=VGS , IDS=250µAN-Ch 0.6 1.3
VGS(th) Gate Threshold Voltage VDS=VGS , IDS=-250µAP-Ch -0.6 -1.3 V
VGS=±16V , VDS=0V N-Ch ±100
IGSS Gate Leakage Current VGS=±12V , VDS=0V P-Ch ±100 nA
VGS=10V , IDS=9A 12 18
VGS=4.5V , IDS=7A N-Ch 17 27
VGS=-4.5V , IDS=-6A 30 42
RDS(ON)aDrain-Source On-state
Resistance
VGS=-2.5V , IDS=-5A P-Ch 45 60
mΩ
ISD=5A , VGS=0V N-Ch 0.6 1.3
VSDaDiode Forward Voltage ISD=-2A , VGS=0V P-Ch -0.6 -1.3 V
Electrical Characteristics (TA = 25°C unless otherwise noted)
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol Parameter N-Channel P-Channel Unit
VDSS Drain-Sourc e Voltage 20 -20
VGSS Gate-Source Voltage ±16 ±12 V
ID*Maximum Drain Current – Continuous 15 -6
IDM Maximum Drain Current – Pulsed 30 -10 A
TA=25°C2.5 2.5
PDMaximum Power Dissipation TA=100°C1.0 1.0 W
TJMaximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
RθjA Thermal Resistance – Junction to Ambient 50 °C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Notesa : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw3
APM9932/C
Notesa : Guaranteed by design, not subject to production testing
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM9932/C
Symbol Parameter Test Condition Min. Typ. Max. Unit
Dynamica
N-Ch 14 22
QgTotal Gate Charge P-Ch 19 25
N-Ch 5
Qgs Gate-Source Charge P-Ch 4.1
N-Ch 2.8
Qgd Gate-Drain Charge
N-Channel
VDS=10V , IDS= 6A
VGS=4.5V
P-Channel
VDS=-4V , IDS=-1A
VGS=-4.5V P-Ch 1.6
nC
N-Ch 612
td(ON) Turn-on Delay Time P-Ch 23 45
N-Ch 510
TrTurn-on Rise Time P-Ch 45 80
N-Ch 16 40
td(OFF) Turn-off Delay Time P-Ch 45 90
N-Ch 520
TfTurn-off Fall Time
N-Channel
VDD=10V , IDS=1A ,
VGEN=4.5V , RG=10Ω
P-Channel
VDD=-4V , IDS=-1A ,
VGEN=-4.5V , RG=10Ω
P-Ch 32 55
ns
N-Ch 1225
Ciss Input Capacitance P-Ch 1400
N-Ch 330
Coss Output Capacita nc e P-Ch 520
N-Ch 220
Crss Reverse Transfer Capacitance
N-Channel
VGS=0V , VDS=15V
Frequency=1.0MHz
P-Channel
VGS=0V , VDS=-4V
Frequency=1.0MHz P-Ch 320
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw4
APM9932/C
0 4 8 121620
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0246810
0
4
8
12
16
20
-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
20
Typical Characteristics
VGS=2.5V
ID-Drain Current (A)
Transfer Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
VGS - Gate-to-Source Voltage (V)
Threshold V oltage vs. Junction Temperature
Tj - Junction Temperature (°C)
VGS(th)-Threshold V oltage (V)
(Normalized)
IDS=250uA
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Drain Current
ID - Drain Current (A)
VGS=4.5V
Output Characteristics
ID-Drain Current (A)
VGS=3,4,5,6,7,8,9,10V
VDS - Drain-to-Source V oltage (V)
VGS=10V
VGS=2V
N-Channel
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw5
APM9932/C
012345678910
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0 5 10 15 20
0
300
600
900
1200
1500
1800
0 5 10 15 20 25 30
0
2
4
6
8
10
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Typical Characteristics (Cont.)
VGS - Gate-to-Source Voltage (V)
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Gate-to-Source V oltage
RDS(ON)-On-Resistance (Ω)
(Normalized)
On-Resistance vs. Junction Temperature
VGS=10V
ID=15A
TJ - Junction T emperature (°C)
VDS - Drain-to-Source Voltage (V)
Capacitance
Capacitance (pF)
Ciss
Coss
Crss
Gate Charge
QG - Gate Charge (nC)
VGS-Gate-Source V oltage (V)
VDS=10V
ID=6A
N-Channel
ID=15A
Frequency=1MHz
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw6
APM9932/C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
20
0.01 0.1 1 10
0
10
20
30
40
50
60
70
80
30
1E-4 1E-3 0.01 0.1 1 10
0.01
0.1
1
30
Source-Drain Diode Forward V oltage
IS-Source Current (A)
TJ=150°C TJ=25°C
VSD -Source-to-Drain V oltage (V)
Typical Characteristics (Cont.)
Power (W)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
D=0.02
SINGLE PULSE
N-Channel
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw7
APM9932/C
012345678910
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
2
4
6
8
10
012345678
0
2
4
6
8
10
-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Typical Characteristics
-ID-Drain Current (A)
Transfer Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
-VGS - Gate-to-Source V oltage (V)
Threshold V oltage vs. Junction Temperature
Tj - Junction Temperature (°C)
-VGS(th)-Threshold V oltage (V)
(Normalized)
-IDS=250uA
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Drain Current
-ID - Drain Current (A)
-VGS=2.5V
Output Characteristics
-ID-Drain Current (A)
-VGS=2,3,4,5,6,7,8,9,10V
-VDS - Drain-to-Source V oltage (V)
-VGS=4.5V
-VGS=2V
P-Channel
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw8
APM9932/C
0246810
0
400
800
1200
1600
2000
048121620
0
1
2
3
4
5
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
12345678910
0.00
0.02
0.04
0.06
0.08
0.10
0.12
Typical Characteristics (Cont.)
-VGS - Gate-to-Source V oltage (V)
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Gate-to-Source V oltage
RDS(ON)-On-Resistance (Ω)
(Normalized)
On-Resistance vs. Junction Temperature
-VGS=4.5V
-ID=6A
TJ - Junction T emperature (°C)
-VDS - Drain-to-Source V oltage (V)
Capacitance
Capacitance (pF)
Ciss
Coss
Crss
Gate Charge
QG - Gate Charge (nC)
-VGS-Gate-Source V oltage (V)
-VDS=4V
-ID=1A
P-Channel
-ID=6A
Frequency=1MHz
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw9
APM9932/C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
1E-4 1E-3 0.01 0.1 1 10
0.01
0.1
1
30
0.01 0.1 1 10
0
20
40
60
80
30
Source-Drain Diode Forward V oltage
-IS-Source Current (A)
TJ=150°C TJ=25°C
-VSD -Source-to-Drain V oltage (V)
Typical Characteristics (Cont.)
Power (W)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
D=0.02
SINGLE PULSE
P-Channel
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw10
APM9932/C
Packaging Information
Millimeters Inches
Dim Min. Max. Min. Max.
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
φ 18
°8°
HE
e1 e2
0.015X45
D
A
A1
0.004max.
1
L
SOP-8 pin ( Reference JEDEC Registration MS-012)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw11
APM9932/C
Reference JEDEC Standard J-STD-020A APRIL 1999
Reflow Condition (IR/Convection or VPR Reflow)
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
°
temperature
Classification Reflow Profiles
Convection or I R/
Convection VPR
Average ramp-up rate( 183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C) 120 seconds max
Temperat ure mainta ine d above 183 °C60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds
Peak tem peratur e range 220 +5/-0 °C or 235 +5/- 0°C 215-219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak tem peratur e 6 minutes max .
Package Reflow Conditions
pkg. thickness ≥
≥≥
≥ 2.5mm
and all bgas pkg. thickness < 2.5mm and
pkg. volume ≥
≥≥
≥ 350 mm³ pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 220 +5/- 0 °C Convect i on 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead S o lder ab ility Meets E IA Specification R SI8 6-91, A NSI/J-ST D- 0 02 C a te g ory 3 .
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw12
APM9932/C
Carrier Tape & Reel Dimensions
A
J
B
T2
T1
C
t
Ao
E
W
Po P
Ko
Bo
D1
D
F
P1
Test item Method Description
SOLDERABIL IT Y MIL-STD-883D-2 003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Reliability test program
Application A B C J T1 T2 W P E
330 ± 162 +1.512.75+
0.15 2 ± 0.5 12.4 ± 0. 2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
F D D1 Po P1 Ao Bo Ko tSOP- 8
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2 .1 ± 0.1 0.3±0.013
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002 www.anpec.com.tw13
APM9932/C
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin T ien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
App lication Carrier Width Cover Tape Width Devices Pe r Reel
SOP- 8 12 9.3 2500
