MMBT3906TT1 General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. Features * NSVM Prefix for Automotive and Other Applications Requiring www.onsemi.com GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT Unique Site and Control Change Requirements * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS (TA = 25C) Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -200 mAdc Symbol Max Unit 200 1.6 mW mW/C 600 C/W 300 2.4 mW mW/C Rating Collector Current - Continuous 2 EMITTER 3 CASE 463 SOT-416/SC-75 STYLE 1 2 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (Note 1) @TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation, FR-4 Board (Note 2) @TA = 25C Derated above 25C MARKING DIAGRAM PD RqJA PD Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 400 C/W Junction and Storage Temperature Range TJ, Tstg -65 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 Inch Pad 2A M G G 1 2A M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping MMBT3906TT1G Device SOT-416 (Pb-Free) 3000 / Tape & Reel NSVMMBT3906TT1G SOT-416 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 August, 2017 - Rev. 3 1 Publication Order Number: MMBT3906TT1/D MMBT3906TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -40 - -40 - -5.0 - - -50 - -50 60 80 100 60 30 - - 300 - - - - -0.25 -0.4 -0.65 - -0.85 -0.95 250 - - 4.5 - 10.0 2.0 12 0.1 10 100 400 3.0 60 - 4.0 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = -1.0 mAdc, IB = 0) V(BR)CEO Collector -Base Breakdown Voltage (IC = -10 mAdc, IE = 0) V(BR)CBO Emitter -Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) IBL Collector Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) hFE Collector -Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) Base -Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VBE(sat) - Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance1 (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hre Small -Signal Current Gain (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 k W, f = 1.0 kHz) NF MHz pF pF kW X 10- 4 - mmhos dB SWITCHING CHARACTERISTICS Delay Time (VCC = -3.0 Vdc, VBE = 0.5 Vdc) td - 35 Rise Time (IC = -10 mAdc, IB1 = -1.0 mAdc) tr - 35 Storage Time (VCC = -3.0 Vdc, IC = -10 mAdc) ts - 225 Fall Time (IB1 = IB2 = -1.0 mAdc) tf - 75 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. www.onsemi.com 2 ns ns r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE MMBT3906TT1 1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 1. Normalized Thermal Response 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k 10 k 0 CS < 4 pF* +10.6 V 300 ns 1N916 10 < t1 < 500 ms DUTY CYCLE = 2% DUTY CYCLE = 2% t1 CS < 4 pF* 10.9 V * Total shunt capacitance of test jig and connectors Figure 2. Delay and Rise Time Equivalent Test Circuit Figure 3. Storage and Fall Time Equivalent Test Circuit www.onsemi.com 3 MMBT3906TT1 TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 5.0 VCC = 40 V IC/IB = 10 QT Cobo Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25C TJ = 125C Cibo 3.0 2.0 1000 700 500 300 200 QA 100 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 70 50 20 30 40 5.0 7.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 4. Capacitance Figure 5. Charge Data 200 500 500 IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 t f , FALL TIME (ns) IC/IB = 20 TIME (ns) 100 70 50 tr @ VCC = 3.0 V 30 20 10 7 5 15 V 40 V 2.0 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 70 50 200 IC/IB = 10 30 20 10 7 5 td @ VOB = 0 V 1.0 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Turn -On Time Figure 7. Fall Time www.onsemi.com 4 200 MMBT3906TT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 5.0 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 1.0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA 20 40 IC = 0.5 mA 8.0 6.0 4.0 IC = 50 mA 2.0 IC = 100 mA 0 0.1 100 0.2 0.4 1.0 2.0 4.0 10 20 40 100 RS, SOURCE RESISTANCE (kW) Figure 8. Figure 9. h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE (m mhos) 300 hfe , CURRENT GAIN 200 100 70 50 70 50 30 20 10 7.0 5.0 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 Figure 10. Current Gain 10 5.0 7.0 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 10 10 h ie , INPUT IMPEDANCE (k ) 5.0 7.0 Figure 11. Output Admittance 20 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 12. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio www.onsemi.com 5 MMBT3906TT1 STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 15. Collector Saturation Region TJ = 25C V, VOLTAGE (VOLTS) 0.8 V, TEMPERATURE COEFFICIENTS (mV/C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 +25C TO +125C -55C TO +25C 0 -0.5 +25C TO +125C -1.0 qVS FOR VBE(sat) -55C TO +25C -1.5 -2.0 200 qVC FOR VCE(sat) 0 Figure 16. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 17. Temperature Coefficients www.onsemi.com 6 180 200 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC-75/SOT-416 CASE 463-01 ISSUE G 3 1 2 DATE 07 AUG 2015 SCALE 4:1 -E- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE -D- 1 M D HE C 0.20 (0.008) E A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.065 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.060 0.063 0.067 MIN 0.027 0.000 0.006 0.004 0.061 0.027 GENERIC MARKING DIAGRAM* A1 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M G STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 1 XX = Specific Device Code M = Date Code G = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.508 0.020 0.787 0.031 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB15184C SC-75/SOT-416 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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