E-Line
TO92 Compatible
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 180 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 1A
Continuous Collector Current IC0.5 A
Practical Power Dissipation * Ptotp 1.5 W
Power Dissipation at Tamb
=25°C
derate above 25°C
Ptot 1
5.7
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 180 V IC
=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO 180 V IC
=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1 µAVCB=145V
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter Saturation
Voltage
VCE(sat) 0.2
0.2
0.25
V
V
V
IC
=50mA, IB=0.5mA*
IC
=100mA, IB=2mA*
IC
=200mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 V IC
=200mA, IB=5mA*
Base-Emitter
Turn-On Voltage
VBE(on) 0.9 V IC=200mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE 500
150
IC
=100mA, VCE
=5V*
IC
=200mA, VCE
=5V*
ZTX696B
3-247
ZTX696B
3-248
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency fT70 MHz IC
=50mA, VCE=5V
f=50MHz
Input Capacitance Cibo 200 pF VEB
=0.5V, f=1MHz
Output Capacitance Cobo 6pFV
CE
=10V, f=1MHz
Switching Times ton
toff
80
4400
ns
ns
IC
=100mA, IB!=10mA
IB2=10mA, VCC
=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
E-Line
TO92 Compatible
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 180 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 1A
Continuous Collector Current IC0.5 A
Practical Power Dissipation * Ptotp 1.5 W
Power Dissipation at Tamb
=25°C
derate above 25°C
Ptot 1
5.7
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 180 V IC
=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO 180 V IC
=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1 µAVCB=145V
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter Saturation
Voltage
VCE(sat) 0.2
0.2
0.25
V
V
V
IC
=50mA, IB=0.5mA*
IC
=100mA, IB=2mA*
IC
=200mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 V IC
=200mA, IB=5mA*
Base-Emitter
Turn-On Voltage
VBE(on) 0.9 V IC=200mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE 500
150
IC
=100mA, VCE
=5V*
IC
=200mA, VCE
=5V*
ZTX696B
3-247
ZTX696B
3-248
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency fT70 MHz IC
=50mA, VCE=5V
f=50MHz
Input Capacitance Cibo 200 pF VEB
=0.5V, f=1MHz
Output Capacitance Cobo 6pFV
CE
=10V, f=1MHz
Switching Times ton
toff
80
4400
ns
ns
IC
=100mA, IB!=10mA
IB2=10mA, VCC
=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC V
BE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
h
FE
- Normalised Gain
V
BE(sat)
- (Volts)
V
BE
- (Volts)
I
C
- Collector Current (Amps)
1.5K
1K
500
h
FE
- Typical Gain
VCE - Collector Voltage (Volts)
Safe Oper atin g Area
1100010 100
0.001
0.01
0.1
1 Single Pulse Test at T amb=25°C
Tamb=25°C -55°C
+25°C
+100°C
+175°C
0
0
-55°C
+25°C
+100°C
+175°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
VCE=5V
IC/IB=50
IC/IB=50
VCE=5V
IC/IB=10
IC/IB=100
IC/IB=50
ZTX696B
3-249
