Databook.fxp 1/13/99 2:09 PM Page B-21 B-21 01/99 2N5460, 2N5461, 2N5462 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at 25C Audio Amplifiers General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N5460 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Voltage VGS Drain Saturation Current (Pulsed) IDSS Max 40 2N5461 Min Max 40 5 6 0.8 4.5 -1 -5 1 4 2N5462 Min 1 1 7.5 0.8 4.5 -2 -9 1.8 Process PJ32 Max Unit V IG = 10A, VDS = OV 5 nA VGS = 20V, VDS = OV 1 A VGS = 20V, VDS = OV 9 V VDS = - 15V, ID = - 1 A V VDS = - 15V, ID = - 100 A V VDS = - 15V, ID = - 200 A VDS = - 15V, ID = - 400 A 40 5 1 0.75 40 V - 10 mA 310 mW 2.8 mW/C 1.5 6 V -4 - 16 mA Test Conditions TA = 100C VDS = - 15V, VGS = OV Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Common Source Forward Transadmittance | Yfs | 2 Common Source Output Admittance | Yos | 75 Common Source Input Capacitance Ciss 7 Common Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage Noise Figure 0.8 0.4 k VGS = OV, ID = O A f = 1 kHz 6 mS VDS = - 15V, VGS = O V f = 1 kHz 75 75 S VDS = - 15V, VGS = O V f = 1 kHz 7 7 pF VDS = - 15V, VGS = OV f = 1 MHz 2 2 2 pF VDS = - 15V, VGS = OV f = 1 MHz e N 2.5 2.5 2.5 dB VDS = - 15V, VGS = OV f = 100 Hz, BW = 1 Hz NF 115 115 115 nV/Hz VDS = - 15V, VGS = OV, RG = 1M f = 100 Hz 1.5 TO226AA Package Surface Mount Dimensions in Inches (mm) SMP5460, SMP5461, SMP5462 5 2 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375