01/99 B-21
2N5460, 2N5461, 2N5462
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage 40 V
Continuous Forward Gate Current – 10 mA
Continuous Device Power Dissipation 310 mW
Power Derating 2.8 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMP5460, SMP5461, SMP5462
At 25°C free air temperature: 2N5460 2N5461 2N5462 Process PJ32
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS 40 40 40 V IG= 10µA, VDS = ØV
Gate Reverse Current IGSS 555nAV
GS = 20V, VDS = ØV
111µAV
GS = 20V, VDS = ØV TA= 100°C
Gate Source Cutoff Voltage VGS(OFF) 0.75 6 1 7.5 1.8 9 V VDS = – 15V, ID= – 1 µA
0.8 4.5 V VDS = – 15V, ID= – 100 µA
Gate Source Voltage VGS 0.8 4.5 V VDS = – 15V, ID= – 200 µA
1.5 6 V VDS = – 15V, ID= – 400 µA
Drain Saturation Current (Pulsed) IDSS – 1– 5– 2– 9– 4– 16mA V
DS = – 15V, VGS = ØV
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 2 0.8 0.4 kΩVGS = ØV, ID= Ø A f = 1 kHz
Common Source Forward Transadmittance |Yfs | 1 4 1.5 5 2 6 mS VDS = – 15V, VGS = ØV f = 1 kHz
Common Source Output Admittance |Yos | 757575µSV
DS = – 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 777pFV
DS = – 15V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 222pFV
DS = – 15V, VGS = ØV f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit ¯eN2.5 2.5 2.5 dB VDS = – 15V, VGS = ØV f = 100 Hz,
Input Noise Voltage BW = 1 Hz
Noise Figure NF 115 115 115 nV/√Hz VDS = – 15V, VGS = ØV, f = 100 Hz
RG= 1MΩ
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Databook.fxp 1/13/99 2:09 PM Page B-21
