MEDIUM POWER SILICON
NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3065
Issue 2
Page 1 of 3
2N3053
• Low Leakage Current,
High Transition Frequency (FT) = 100MHz Typ.
• Hermetic TO-39 Metal Package.
• Ideally Suited For Medium Current Switching And
Amplifier Applications.
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 60V
VCEO Collector – Emitter Voltage 40V
VCER Collector – Emitter Voltage
RBE = 10Ω 50V
VCEX Collector – Emitter Voltage VBE = -1.5V 60V
VEBO Emitter – Base Voltage 5V
IC Continuous Collector Current 0.7A
PD Total Power Dissipation at TA = 25°C 1.0W
Derate Above 25°C 5.71mW/°C
PD Total Power Dissipation at TC = 25°C 5W
Derate Above 25°C 28.6mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJA Thermal Resistance, Junction To Ambient 175 °C/W
RθJC
Thermal Resistance, Junction To Case 35 °C/W
MEDIUM POWER SILICON
NPN TRANSISTOR
2N3053
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3065
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO Collector-Emitter
Breakdown Voltage IC = 100µA IB = 0 40
V(BR)CER
(1)
Collector-Emitter
Breakdown Voltage IC = 10mA RBE = 10Ω 50
V(BR)CBO Collector-Base
Breakdown Voltage IC = 100µA IE = 0 60
V(BR)EBO Emitter-Base
Breakdown Voltage IE = 100µA IC = 0 5
V
ICBO Collector Cut-Off Current VCB = 30V IE = 0 0.25
IEBO Emitter Cut-Off Current VEB = 4V IC = 0 0.25
µA
hFE
(1)
Forward-current transfer
ratio IC = 150mA VCE = 10V 50 250
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = 150mA IB = 15mA 1.4
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = 150mA IB = 15mA 1.7
V
DYNAMIC CHARACTERISTICS
IC = 50mA VCE = 10V
fT Transition Frequency
f = 20MHz
100 MHz
VCB = 10V IE = 0
Cobo Output Capacitance
f = 1.0MHz
15 pF
VEB = 0.5V IC = 0
Cibo Input Capacitance
f = 1.0MHz
80 pF
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 380us, δ ≤ 2%
MEDIUM POWER SILICON
NPN TRANSISTOR
2N3053
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3065
Issue 2
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO
-
39 (TO
-
205AD
) METAL PACKAGE
Underside View
Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
