MBR1045MFS, NRVB1045MFS Switch Mode Power Rectifiers These state-of-the-art devices have the following features: http://onsemi.com Features * Low Power Loss / High Efficiency * New Package Provides Capability of Inspection and Probe After * * * * * * Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 150C Operating Junction Temperature Wettable Flacks Option Available NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These are Pb-Free and Halide-Free Devices SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 45 VOLTS 5,6 1,2,3 MARKING DIAGRAM A 1 Mechanical Characteristics: * * * * * Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94-0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Device Meets MSL 1 Requirements SO-8 FLAT LEAD CASE 488AA STYLE 2 B1045 A Y W ZZ A A C B1045 AYWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability Applications * Excellent Alternative to DPAK in Space-Constrained Automotive * * Applications Output Rectification in Compact Portable Consumer Applications Freewheeling Diode used with Inductive Loads ORDERING INFORMATION Device Package Shipping MBR1045MFST1G SO-8 FL (Pb-Free) 1500 / Tape & Reel MBR1045MFST3G SO-8 FL (Pb-Free) 5000 / Tape & Reel NRVB1045MFST1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NRVB1045MFST3G SO-8 FL (Pb-Free) 5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2014 August, 2014 - Rev. 1 1 Publication Order Number: MBR1045MFS/D MBR1045MFS, NRVB1045MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 Average Rectified Forward Current (Rated VR, TC = 142C) IF(AV) 10 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 140C) IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -55 to +150 C EAS 150 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non-repetitive) V ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RJA THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RJC - 1.7 C/W 0.430 0.504 0.550 0.595 0.52 0.62 0.65 0.75 47 0.076 170 0.500 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 10 A, TJ = 125C) (iF = 10 A, TJ = 25C) (iF = 20 A, TJ = 125C) (iF = 20 A, TJ = 25C) vF Reverse Current (Note 1) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Diode Capacitance CD V mA 300 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 MBR1045MFS, NRVB1045MFS IF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 125C 10 TA = 150C TA = 25C 1 TA = -40C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 100 10 TA = 125C TA = 150C TA = 25C 1 TA = -40C 0.1 0 0.3 0.4 0.5 0.6 0.7 0.8 Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E-01 0.9 1.E+00 TA = 150C TA = 150C 1.E-01 1.E-02 TA = 125C 1.E-03 1.E-02 TA = 125C 1.E-03 1.E-04 TA = 25C 1.E-05 1.E-06 1.E-04 TA = -40C TA = 25C 1.E-05 1.E-07 TA = -40C 1.E-06 1.E-08 1.E-07 1.E-09 1.E-10 0 10 20 30 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 1.E-08 0 10000 TJ = 25C 1000 100 0 10 20 30 VR, REVERSE VOLTAGE (V) 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 45 Figure 4. Maximum Reverse Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) Figure 3. Typical Reverse Characteristics C, JUNCTION CAPACITANCE (pF) 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E+00 10 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 40 20 RqJC = 1.7C/W dc 15 SQUARE WAVE 10 5 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 6. Current Derating TO-220AB Figure 5. Typical Junction Characteristics http://onsemi.com 3 MBR1045MFS, NRVB1045MFS TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 TJ = 150C IPK/IAV = 20 7 IPK/IAV = 10 6 IPK/IAV = 5 5 4 3 2 Square Wave 1 dc 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 R(t), (C/W) 10 50% Duty Cycle 20% 10% 5% 2% Assumes 25C ambient and soldered to a 600 mm2 - oz copper pad on PCB 1 1% 0.1 0.01 0.001 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (S) Figure 8. R(t) vs. Duty http://onsemi.com 4 1 10 100 1000 MBR1045MFS, NRVB1045MFS PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE K 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A 0.10 C SOLDERING FOOTPRINT* SIDE VIEW 8X DETAIL A 3X 4X 1.270 0.750 4X b 0.10 C A B 0.05 c MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 5.00 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.15 6.00 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ STYLE 2: PIN 1. ANODE 2. ANODE 3. ANODE 4. NO CONNECT 5. CATHODE 1.000 e/2 L 1 0.965 4 1.330 K 2X 0.905 2X 0.495 E2 PIN 5 (EXPOSED PAD) G L1 M 4.530 3.200 0.475 2X D2 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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