2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.60.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAV *1 PD Tch Tstg Rating 900 10 40 30 10 648 310 +150 -55 to +150 *1 L=11.9mH, Vcc=90V Unit V A A V A mJ W C Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton t No Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge o c e r IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V d en . de Gate(G) ew n for mm Symbol V(BR)DSS VGS(th) Drain(D) < *2 Tch=150C Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Equivalent circuit schematic Tch=25C Tch=125C ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=10A VGS=10V RGS=10 Vcc=450V ID=10A VGS=10V L=11.9mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. n sig Source(S) Typ. Max. 900 2.5 3.0 3.5 10 500 0.2 1.0 10 100 0.92 1.2 3.5 7 2200 3300 240 360 115 173 28 42 70 105 220 330 90 135 120 180 36 54 40 60 10 1.00 1.50 1.8 21.0 Units V V A mA nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.403 50.0 Units C/W C/W 1 2SK3341-01 FUJI POWER MOSFET Characteristics Safe operating area ID=f(VDS):Single Pulse,Tc=25C Allowable Power Dissipation PD=f(Tc) 400 2 10 350 t= 1s 300 10s 1 10 250 100s ID [A] PD [W] D.C. 200 1ms 150 0 10 10ms 100 t D= 50 100ms t T T 0 -1 10 0 25 50 75 100 125 1 150 10 10 2 3 10 VDS [V] Tc [C] Typical Transfer Characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25C Typical Output Characteristics ID=f(VDS):80s pulse test,Tch=25C 22 20 18 10 20V 7V 6.5V 14 10 5.5V 1 mm 8 6 d en 5.0V 4 eco n sig ew n for ID[A] ID [A] 6.0V 12 . de 10V 16 0.1 VGS=4.5V 2 r ot 0 0 2 4 6 8 N 10 12 14 16 18 20 0.01 22 24 0 26 1 2 3 VDS [V] 4 5 6 7 8 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s pulse test,Tch=25C Typical Transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 3.0 VGS= 4.5V 5.0V 5.5V 6.0V 2.5 10 RDS(on) [ ] gfs [S] 2.0 1 6.5V 7V 1.5 10V 20V 1.0 0.5 0.1 0.0 0.1 1 10 0 5 10 15 20 25 ID [A] ID [A] http://store.iiic.cc/ 2 2SK3341-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 5.0 4.0 4.5 3.5 4.0 3.0 max. VGS(th) [V] 3.5 RDS(on) [ ] 2.5 2.0 3.0 typ. 2.5 2.0 1.5 max. typ. min. 1.5 1.0 1.0 0.5 0.5 0.0 0.0 -50 -25 0 25 50 75 100 125 -50 150 -25 0 25 50 Typical Gate Charge Characteristics VGS=f(Qg):ID=10A,Tch=25C 10 10 n sig ew n for C [F] 450V 720V 10 -9 nd e mm 10 5 0 0 50 t No 100 150 . de -8 Vcc= 180V VGS [V] 125 -7 20 10 100 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 25 15 75 Tch [C] Tch [C] o c e r 150 200 10 Ciss Coss -10 Crss -11 250 10 -2 10 -1 10 Qg [C] 0 1 10 10 2 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C 100 10 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 3 td(off) t [ns] IF [A] 10 10 tf 2 1 tr td(on) 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 10 1 10 -1 VSD [V] 10 0 10 1 ID [A] http://store.iiic.cc/ 3 2SK3341-01 FUJI POWER MOSFET Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=90V,I(AV)<=10A 0 800 10 700 0.5 600 -1 Zth(ch-c) [K/W] 10 EAV [mJ] 500 400 0.2 0.1 0.05 0.02 0.01 -2 10 t 0 300 D= t T T 200 -3 10 -5 10 -4 10 -3 10 100 -2 -1 10 0 10 10 1 10 t [s] 0 0 25 50 75 100 125 150 starting Tch [C] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4