The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
1
1
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Designed primarily for linear large–signal output stages up to
150 MHz frequency range.
N–Channel enhancement mode
Specified 28 volts, 30 MHz characteristics
Output power = 150 watts
Power gain = 15 dB (Typ.)
Efficiency = 40% (Typ.)
Superior high order IMD
IMD(d3) (150 W PEP): –30 dB (Typ.)
IMD(d11) (150 W PEP): –60 dB (Typ.)
100% tested for load mismatch at all phase angles with 30:1 VSWR
The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5
The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
6
The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
7
The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
8
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
8
The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
9
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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9
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capaci-
tors between the terminals. The metal oxide gate struc-
ture determines the capacitors from gate–to–drain (Cgd),
and gate–to–source (Cgs). The PN junction formed dur-
ing the fabrication of the RF MOSFET results in a junc-
tion capacitance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances
on data sheets. The relationships between the inter–
terminal capacitances and those given on data sheets
are shown below. The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the
gate.
2. Positive voltage of the drain in respect to source
and zero volts at the gate. In the latter case the
numbers are lower. However, neither method repre-
sents the actual operating conditions in RF applica-
tions.
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data pre-
sented, Figure 5 may give the designer additional infor-
mation on the capabilities of this device. The graph
represents the small signal unity current gain frequency
at a given drain current level. This is equivalent to fT for
bipolar transistors. Since this test is performed at a fast
sweep speed, heating of the device does not occur.
Thus, in normal use, the higher temperatures may de-
grade these characteristics to some extent.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The input resistance is very high — on the order of 109
ohms
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open–
circuited or floating should be avoided. These conditions
can result in turn–on of the devices due to voltage build–up
on the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protec-
tion is required, an external zener diode is recommended.
The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
10
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
10
The RF MOSFET Line
150W, to 150MHz, 28V
Rev. V1
MRF140
11
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
11
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