2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general-purpose amplifier and low speed switching applications. * High DC Current Gain - * * * * * * http://onsemi.com hFE = 3500 (Typ) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc (Min) - 2N6668 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package Complementary to 2N6387, 2N6388 Pb-Free Packages are Available* PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60-80 V, 65 W MARKING DIAGRAM 4 1 COLLECTOR 2 STYLE 1: PIN 1. 2. 3. 4. 3 BASE COLLECTOR EMITTER COLLECTOR 2N666x AYWWG CASE 221A-09 TO-220AB BASE 8k x A Y WW G 120 = 7 or 8 = Assembly Location = Year = Work Week = Pb-Free Package EMITTER Figure 1. Darlington Schematic ORDERING INFORMATION Device Package Shipping 2N6667 TO-220AB 50 Units/Rail 2N6667G TO-220AB (Pb-Free) 50 Units/Rail 2N6668 TO-220AB 50 Units/Rail 2N6668G TO-220AB (Pb-Free) 50 Units/Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 7 1 Publication Order Number: 2N6667/D 2N6667, 2N6668 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (Note 1) Rating Symbol 2N6667 2N6668 Unit VCEO 60 80 Vdc Collector-Base Voltage VCB 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current - Continuous - Peak IC 10 15 Adc Base Current IB 250 mAdc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 65 0.52 W W/_C Total Device Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C TJ, Tstg - 65 to + 150 _C Collector-Emitter Voltage Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RqJC 1.92 _C/W Thermal Resistance, Junction to Ambient RqJA 62.5 _C/W ELECTRICAL CHARACTERISTICS (Note 1) (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 - - Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N6667 2N6668 ICEO - - 1.0 1.0 mAdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6667 2N6668 2N6667 2N6668 ICEX - - - - 300 300 3.0 3.0 mAdc IEBO - 5.0 mAdc hFE 1000 100 20000 - - Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) VCE(sat) - - 2.0 3.0 Vdc Base-Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) VBE(sat) - - 2.8 4.5 Vdc Current Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) |hfe| 20 - - Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob - 200 pF Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 1000 - - Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) (IC = 10 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. http://onsemi.com 2 2N6667, 2N6668 VCC - 30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA RC SCOPE TUT V2 RB APPROX +8V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf v 10 ns DUTY CYCLE = 1.0% 51 0 D1 V1 [8k [ 120 + 4.0 V APPROX 25 s - 12 V Figure 2. Switching Times Test Circuit TC 80 10 7 5 3 60 3 t, TIME (s) PD, POWER DISSIPATION (WATTS) TA 4 TC 2 40 1 20 TA tr 2 ts 1 0.7 0.5 0.3 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 .td tf 0.2 0 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.1 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) Figure 4. Typical Switching Times Figure 3. Power Derating r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.05 0.1 ZJC(t) = r(t) RJC RJC = 1.92C/W MAX 0.05 0.03 0.02 0.02 0.01 0.01 0.01 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 Figure 5. Thermal Response http://onsemi.com 3 20 50 100 200 500 1000 2N6667, 2N6668 IC, COLLECTOR CURRENT (AMPS) 20 100 s 5 ms 10 5 3 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. dc 1 ms 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 TJ = 150C 2N6667 BONDING WIRE LIMIT 2N6668 THERMAL LIMIT @ TC = 25C SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 20 30 50 5 2 3 7 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1 70 100 Figure 6. Maximum Safe Operating Area 300 5000 TJ = 25C 2000 C, CAPACITANCE (pF) hFE , SMALL-SIGNAL CURENT GAIN 10,000 1000 500 TC = 25C VCE = 4 VOLTS IC = 3 AMPS 200 100 Cob Cib 100 70 50 50 20 10 1 2 5 7 10 3 20 30 50 70 100 30 0.1 200 300 500 1000 f, FREQUENCY (kHz) 1 2 5 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Small-Signal Current Gain Figure 8. Typical Capacitance VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 20,000 VCE = 3 V 10,000 hFE, DC CURRENT GAIN 200 7000 5000 3000 2000 TJ = 150C TJ = 25C 1000 700 500 300 200 0.1 TJ = - 55C 0.2 3 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (AMPS) 5 7 10 Figure 9. Typical DC Current Gain 0.2 100 50 2.6 TJ = 25C 2.2 IC = 2 A 4A 6A 1.8 1.4 1 0.6 0.3 0.5 0.7 1 2 3 5 7 IB, BASE CURRENT (mA) 10 20 30 Figure 10. Typical Collector Saturation Region http://onsemi.com 4 2N6667, 2N6668 +5 V, TEMPERATURE COEFFICIENTS (mV/C) 2.5 TJ = 25C 2 1.5 1 0.5 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 7 10 +4 *IC/IB +3 hFE@VCE + 3.0V 3 25C to 150C +2 +1 -55C to 25C 0 -1 VC for VCE(sat) -2 -3 VB for VBE 25C to 150C -55C to 25C -4 -5 0.1 0.2 0.3 0.5 0.7 103 REVERSE FORWARD VCE = 30 V 102 TJ = 150C 101 100C 100 10-1 +0.6 2 3 5 7 Figure 12. Typical Temperature Coefficients 105 104 1 IC, COLLECTOR CURRENT (AMP) Figure 11. Typical "On" Voltages IC, COLLECTOR CURRENT (A) V, VOLTAGE (VOLTS) 3 25C +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Typical Collector Cut-Off Region http://onsemi.com 5 10 2N6667, 2N6668 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6667/D