Multiple Transistors - ; Max IcBo \ be Type Absolute Max. Ratings Typical at ven Base Type Polarity Max. or *f, Me at im) Construction Ref. (mW) + fab Vv Ver, VE; 1 or *hfe aie) | WY | WY | Wy | aoa) HA v TEXAS (Continued) Current Types (Continued) 2N4854 PNP / NPN 600 60 40 _ 200 at 150 _ _ 18 2N4855 PNP/ Dual amplifiers NPN 640 60 40 - 80 at 150 _ _ 18 ft Minimum value Silicon Field Effect Transistors-FETS i Max. ical Max. com Absolute Max. Ratings V (BR) gss sa eyical input _ nase Type struction Reverse Transfer | Capaci- Application Ref Pd Vds Vdg Ves Ig Current | Admittance | tance , (mW) (VY) (Vv) (VY) (mA) (nA) (umhos) | (PF) MULLARD Current Types BFW12 Bryiat NcPE 150 30 30 30 5 _ O.1 _ ~ General purpose ai BFR29 NcPE 200 30 30 10 50 _ _ _ ~ Audio, LF., V.H.F. 55 BFR30 NcPE 200 25 25 25 5 _ 0.2 _ ~ i Micro-miniature 58 BFR31 NcPE 200 25 25 25 5 _ 0,2 _ _ 58 Brees NeMOS 200 20 - 8 20 ~ 1 12,000 4.5* Communications 22 BSV81 NcPE 200 30 30 10 50 _ _ ~_ Choppers 55 BFQ10 BFQ11 BFQ12 High performance, low BFQ13 ) dual NCPE 250 30 30 30 10 _ _ _ _ level differential 32 BFQ14 amplifiers BFQ15 BFQ16 Bresia; NePE 250 30 30 30 20 ~ 3,000 5 Matched pair 21 BFS21A , P BF244A : BFO4 tn NePE 300 30 30 30 10 5 Low noise 29 BF244C BF245A BF245B NcPE 300 30 30 30 10 _ 5 _ - Low noise 56 BF245C S BF256A BF256B ( NcPE 300 30 30 30 10 _ 5 _ General purpose 56 BF256C BFW10 NcPE 300 30 30 30 20 _ _ 5, 000 5 \ Low noise, wideband a1 BFWI1 NcPE 300 30 30 30 20 _ _ 5, 250 5 amplifiers 21 BFW61 NcPE 300 25 25 25 20 _ _ 4,250 6 General purpose 21 2N3823 NePE 300 30 30 30 10 30 _ 5, 000 6 V.H.F. amps/mixers a1 BSV78 NcPE 350 40 40 40 50 _ 0.25 _ - 57 BSV79 NecPE 350 40 40 40 50 _ 0.25 _ -| General purpose 57 BSV80 NcPE 350 40 40 40 50 _ 0.25 _ _ 57 Minimum value * Typical value 72