CSD20060D-Silicon Carbide Schottky Diode Zero R ecovery(R) VRRM Rectifier IF(AVG) = 20 A Qc Features * * * * * * * = 600 V = 56 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-247-3 Benefits * * * * * Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications * * * Switch Mode Power Supplies Power Factor Correction - Typical PFC Pout : 2000W-4000W Motor Drives - Typical Power : 5HP-10HP Part Number Package Marking CSD20060D TO-247-3 CSD20060 Maximum Ratings .Q D20060D Rev Datasheet: CS Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V 10/20 16.5/33 A TC=150C TC=125C IF(AVG) Average Forward Current (Per Leg/Device) IF(Peak) Peak Forward Current 25/50 A TC=125, TREP<1 mS, Duty=0.5 IFRM Repetitive Peak Forward Surge Current (Per Leg/Device) 43/86 29/58 A TC=25C, tP=10 ms, Half Sine Wave TC=125C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current (Per Leg) 77 A TC=25C, tP=1.5 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current (Per Leg/Device) 250/500 A TC=25C, tP=10 s, Pulse Ptot Power Dissipation (Per Leg) 138 46 W TC=25C TC=125C -55 to +175 C 1 8.8 Nm lbf-in TJ , Tstg Operating Junction and Storage Temperature TO-247 Mounting Torque Note M3 Screw 6-32 Screw Subject to change without notice. www.cree.com/power 1 Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions VF Forward Voltage 1.5 2.0 1.8 2.4 V IR Reverse Current 50 100 200 1000 A VR = 600 V TJ=25C VR = 600 V TJ=175C QC Total Capacitive Charge 28 nC VR = 600 V, IF = 10 A di/dt = 500 A/s TJ = 25C C Total Capacitance 550 65 50 pF VR = 0 V, TJ = 25C, f = 1 MHz VR = 200 V, TJ = 25C, f = 1 MHz VR = 400 V, TJ = 25C, f = 1 MHz Note IF = 10 A TJ=25C IF = 10 A TJ=175C Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RJC ** Parameter Typ. Unit Thermal Resistance from Junction to Case 1.08** 0.54* C/W Per Leg, * Both Legs Typical Performance (Per Leg) 20 200 18 180 16 160 12 10 8 6 140 120 100 80 60 4 40 2 20 0 0 2 IR Reverse Current (A) IF Forward Current (A) 14 1.0 2.0 3.0 4.0 0 0 100 200 300 400 500 600 700 VF Forward Voltage (V) VR Reverse Voltage (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics CSD20060D Rev. Q Typical Performance (Per Leg) 400 Current Derating 100.0 100 95.0 90 90.0 85.0 80 80.0 75.0 70 70.0 65.0 60.0 60 55.0 50 50.0 45.0 40.0 40 35.0 30.0 30 25.0 20.0 20 15.0 10.0 10 5.0 0 0.0 350 10% 30% 50% 70% DC C Capacitance (pF) Current (A) Forward Peak IF(PEAK) Peak Forward Current 300 Duty* Duty* Duty* Duty* 250 200 150 100 50 25 25 0 1 50 75 100 125 150 175 200 50 75 100 125 150 175 200 DC * Frequency > 1KHz 70% Duty 50% Duty 30% Duty 10 100 1000 VR Reverse Voltage (V) Case Temperature (C) TC Case Temperature 10% Duty Figure 3. Current Derating Figure 4. Capacitance vs. Reverse Voltage 1.0E+01 Zth (C/W) 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 Tim e (s) Figure 5. Transient Thermal Impedance 3 CSD20060D Rev. Q 1.E-02 1.E-01 1.E+00 Typical Performance (Per Leg) 140 140.000 Power Dissipation (W) 120.000 120 100 100.000 80 80.000 60 60.000 40 40.000 20 20.000 0 0.000 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC Case Temperature (C) Figure 6. Power Derating 4 CSD20060D Rev. Q Package Dimensions Package TO-247-3 POS X Z W Y BB Inches Max Min Max A .605 .631 15.367 16.027 B .800 .830 20.320 21.082 C .789 .800 20.05 20.31 D .095 .126 2.413 3.200 E .046 .052 1.168 1.321 F .060 .084 1.524 2.134 G AA 5 CSD20060D Rev. Q Millimeters Min .215 TYP .215 TYP H .180 .203 4.572 5.156 J .078 .081 1.982 2.057 K 6 21 6 21 L 4 6 4 6 M 2 4 2 4 N 2 4 2 4 P .090 .097 2.286 2.464 Q .020 .030 .508 .762 R 9 11 9 11 S 9 11 9 11 T 2 8 2 8 U 2 8 2 8 3.658 V .138 .144 3.505 W .210 .220 5.334 5.588 X .502 .557 12.751 14.148 Y .637 .695 16.180 17.653 Z .040 .052 1.016 1.321 AA .032 .046 .813 1.168 BB .110 .140 2.794 3.556 Recommended Solder Pad Layout .12 .2 .08 .2 TO-247-3 Part Number Package Marking CSD20060D TO-247-3 CSD20060 Diode Model Diode Model CSD20060 per Leg Vf T = VT + If*RT VT= 0.92 + (Tj * -1.35*10-3) RT= 0.052 + (Tj * 0.29*10-3) Note: Tj = Diode Junction Temperature In Degrees Celcius VT RT "The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006. This part number was released previously with Sn/Pb solder plating as a standard industry finish. For more information please contact power_sales@cree.com " This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright (c) 2006-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 CSD20060D Rev. Q Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power