Silicon Switching Diode 1N914BCP DO-35 Glass Package | Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Featu res DO-35 Glass Package Lead Dia. Six sigma quality 0.018-0,022' Metallurgically bonded Ne BKC's Sigma Bond plating - fF} A : for problem free solderability 1.0" PE Length > 0a < , LL-34/35 MELF SMD available iMinySesse0.mn 155.028 vm Hermetic Glass Body Comparable to JANS Only Value Added Testing Used Maximum Ratings Symbol Value Unit Peak Inverse Voltage PIV 100 (Min). Voits Average Rectified Current lavg 200 mAmps Continuous Forward Current | eae 300 mAmps Peak Surge Current (t= 1 sec.) teak _ 1.0 Amp BKC Power Dissipation T,=50 C, L = 3/8" from body P it 500 mWatts Operating Temperature Range To, -65 to +200 C Storage Temperature Range T 5, -65 to +200 Electrical Characteristics @ 25C* Symbol Minimum Maximum Unit Forward Voltage Drop @ |.= 10 mA Vv. * 0.80 Volts Forward Voltage Drop @ |,= 100 mA Ve 1.20 Volts Breakdown Voltage @ |, = 100A PIV 100 Volts Reverse Leakage Current @ V, = 20 V l, 25 (50000 @ 150 C)| nA Reverse Leakage Current @ V.=75 V i. 0.5 (100 @ 150C) | microA Capacitance @ V.=0V, f= tmHz C, 4.0 pF Capacitance @ V.=1.5V, f= 1mHz Cc, 2.8 pF Reverse Recovery time (note 1) t, 5.0 nSecs Forward Recovery time t,, 20 nsecs Note 1: Per Method 4031-A with |. = 10 mA,Vr = 6 V, R, = 100 Ohms. * UNLESS OTHERWISE SPECIFIED 48 BKC Semiconductors ICrosemi 6 Lake Street - Lawrence. MA Gi84/ Progress Powered by Technology Tel: 978-681-0392 - Fax. 978-681-9138 ais ll