S25FL116K/S25FL132K/S25FL164K
16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/
64-Mbit (8 Mbyte), 3.0 V, SPI Flash Memory
Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document Number: 002-00497 Rev. *I Revised July 04, 2018
This product family has been retired and is not recommended for designs. For new and current designs, S25FL064L supersede the
S25FL1-K family. These are the factory-recommended migration paths. Please refer to the S25FL-L Family datasheets for
specifications and ordering information.
Features
Serial Peripheral Interface (SPI) with Multi-I/O
❐SPI Clock polarity and phase modes 0 and 3
❐Command subset and footprint compatible with S25FL-K
Read
❐Normal Read (Serial):
• 50 MHz clock rate (40 °C to +85 °C/105 °C)
❐Fast Read (Serial):
• 108 MHz clock rate (40 °C to +85 °C/105 °C)
❐Dual Read:
• 108 MHz clock rate (40 °C to +85 °C/105 °C)
❐Quad Read:
• 108 MHz clock rate (40 °C to +85 °C/105 °C)
❐54 MB/s maximum continuous data transfer rate
(40 °C to +85 °C/105 °C)
❐Efficient Execute-In-Place (XIP)
❐Continuous and wrapped read modes
❐Serial Flash Discoverable Parameters (SFDP)
Program
❐Serial-input Page Program (up to 256 bytes)
❐Program Suspend and Resume
Erase
❐Uniform sector erase (4 kB)
❐Uniform block erase (64 kB)
❐Chip erase
❐Erase Suspend and Resume
Cycling Endurance
❐100K Program-Erase cycles, minimum
Data Retention
❐20-year data retention, minimum
Security
❐Three 256-byte Security Registers with OTP protection
❐Low supply voltage protection of the entire memory
❐Pointer-based security protection feature (S25FL132K and
S25FL164K)
❐Top / Bottom relative Block Protection Range, 4 kB to all of
memory
❐8-Byte Unique ID for each device
❐Nonvolatile Status Register bits control protection modes
• Software command protection
• Hardware input signal protection
• Lock-Down until power cycle protection
• OTP protection of security registers
90 nm Floating Gate Technology
Single Supply Voltage
❐2.7 V to 3.6 V (Industrial, Industrial Plus, and Extended tem-
perature range)
❐2.6 V to 3.6 V (Extended temperature range)
Temperature Ranges
❐Industrial (40 °C to +85 °C)
❐Industrial Plus (40 °C to +105 °C)
❐Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)
❐Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)
Package Options
❐S25FL116K
• 8-lead SOIC (150 mil) – SOA008
• 8-lead SOIC (208 mil) – SOC008
• 8-contact WSON 5 mm x 6 mm – WND008
• 24-ball BGA 6 mm 8 mm – FAB024 and FAC024
• KGD / KGW
❐S25FL132K
• 8-lead SOIC (150 mil) – SOA008
• 8-lead SOIC (208 mil) – SOC008
• 8-contact USON 4 mm 4 mm – UNF008
• 8-contact WSON 5 mm 6 mm – WND008
• 24-ball BGA 6 mm 8 mm – FAB024 and FAC024
• KGD / KGW
❐S25FL164K
• 8-lead SOIC (208 mil) – SOC008
• 16-lead SOIC (300 mil) – SO3016
• 8-contact WSON 5 mm 6 mm – WND008
• 24-ball BGA 6 mm 8 mm – FAB024 and FAC024
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 2 of 90
S25FL116K/S25FL132K/S25FL164K
Logic Block Diagram
Performance Summary
Maximum Read Rates (VCC = 2.7 V to 3.6 V, 85 °C/105 °C)
Command Clock Rate (MHz) Mbytes/s
Read 50 6.25
Fast Read 108 13.5
Dual Read 108 27
Quad Read 108 54
Typical Program and Erase Rates (VCC = 2.7 V to 3.6 V, 85 °C/105 °C)
Operation kbytes/s
Page Programming (256-byte page buffer) 365
4-kbyte Sector Erase 81
64-kbyte Sector Erase 131
Typical Current Consumption (VCC = 2.7 V to 3.6 V, 85 °C/105 °C)
Operation Current (mA)
Serial Read 50 MHz 7
Serial Read 108 MHz 12
Dual Read 108 MHz 14
Quad Read 108 MHz 16
Program 20
Erase 20
Standby 0.015
Deep-Power Down 0.002
Memory
Control
Logic
Data Path
X Decoders
CS#
SCK
SI/IO0
SO/IO1
HOLD#/IO3
WP#/IO2
I/O Y Decoders
Data Latch
Not Recommended for New Design
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Contents
1. General Description..................................................... 4
1.1 Migration Notes.............................................................. 5
1.2 Glossary......................................................................... 6
1.3 Other Resources............................................................ 7
2. Hardware Interface....................................................... 7
2.1 Serial Peripheral Interface with Multiple Input / Output
(SPI-MIO)....................................................................... 7
3. Signal Descriptions ..................................................... 8
3.1 Input / Output Summary................................................. 8
3.2 Address and Data Configuration.................................... 8
3.3 Serial Clock (SCK)......................................................... 8
3.4 Chip Select (CS#) .......................................................... 9
3.5 Serial Input (SI) / IO0 ..................................................... 9
3.6 Serial Output (SO) / IO1................................................. 9
3.7 Write Protect (WP#) / IO2 .............................................. 9
3.8 HOLD# / IO3 .................................................................. 9
3.9 Core and I/O Signal Voltage Supply (VCC) .................. 10
3.10 Supply and Signal Ground (VSS) ................................. 10
3.11 Not Connected (NC) .................................................... 10
3.12 Reserved for Future Use (RFU)................................... 10
3.13 Do Not Use (DNU) ....................................................... 10
3.14 Block Diagrams............................................................ 10
4. Signal Protocols......................................................... 12
4.1 SPI Clock Modes ......................................................... 12
4.2 Command Protocol ...................................................... 12
4.3 Interface States............................................................ 16
4.4 Status Register Effects on the Interface ...................... 18
4.5 Data Protection ............................................................ 19
5. Electrical Characteristics .......................................... 20
5.1 Absolute Maximum Ratings ......................................... 20
5.2 Thermal Resistance ..................................................... 21
5.3 Operating Ranges........................................................ 21
5.4 DC Electrical Characteristics ....................................... 22
5.5 AC Measurement Conditions ....................................... 23
5.6 Power-Up Timing ......................................................... 24
5.7 Power-On (Cold) Reset................................................ 25
5.8 AC Electrical Characteristics........................................ 25
6. Physical Interface ...................................................... 29
6.1 Connection Diagrams ................................................... 29
6.2 Physical Diagrams ........................................................ 31
7. Software Interface....................................................... 38
8. Address Space Maps.................................................. 38
8.1 Overview....................................................................... 38
8.2 Flash Memory Array...................................................... 38
8.3 Security Registers......................................................... 39
8.4 Security Register 0 — Serial Flash Discoverable
Parameters (SFDP — JEDEC JESD216B) .................. 39
8.5 Status Registers ........................................................... 50
8.6 Device Identification...................................................... 60
9. Functional Description............................................... 61
9.1 SPI Operations ............................................................. 61
9.2 Write Protection ............................................................ 62
9.3 Status Registers ........................................................... 62
10. Commands .................................................................. 63
10.1 Configuration and Status Commands........................... 65
10.2 Program and Erase Commands ................................... 68
10.3 Read Commands .......................................................... 71
10.4 Reset Commands ......................................................... 76
10.5 ID and Security Commands.......................................... 78
10.6 Set Block / Pointer Protection (39h) — S25FL132K
and S25FL164K............................................................ 82
11. Data Integrity ............................................................... 84
11.1 Erase Endurance .......................................................... 84
11.2 Data Retention.............................................................. 84
11.3 Initial Delivery State ...................................................... 84
12. Ordering Information.................................................. 85
13. Revision History.......................................................... 88
Document History Page ..................................................... 88
Sales, Solutions, and Legal Information .......................... 91
Worldwide Sales and Design Support ........................... 91
Products ........................................................................ 91
PSoC® Solutions .......................................................... 91
Cypress Developer Community ..................................... 91
Technical Support ......................................................... 91
Not Recommended for New Design
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S25FL116K/S25FL132K/S25FL164K
1. General Description
The S25FL1-K of nonvolatile flash memory devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI
single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O
or QIO) serial protocols. This multiple width interface is called SPI Multi-I/O or MIO.
The SPI-MIO protocols use only 4 to 6 signals:
Chip Select (CS#)
Serial Clock (SCK)
❐IO0 (SI)
❐IO1 (SO)
❐IO2 (WP#)
❐IO3 (HOLD#)
Serial Data
The SIO protocol uses Serial Input (SI) and Serial Output (SO) for data transfer. The DIO protocols use IO0 and IO1 to input or
output two bits of data in each clock cycle.
The Write Protect (WP#) input signal option allows hardware control over data protection. Software controlled commands can also
manage data protection.
The HOLD# input signal option allows commands to be suspended and resumed on any clock cycle.
The QIO protocols use all of the data signals (IO0 to IO3) to transfer 4 bits in each clock cycle. When the QIO protocols are enabled
the WP# and HOLD# inputs and features are disabled.
Clock frequency of up to 108 MHz is supported, allowing data transfer rates up to:
Single bit data path = 13.5 Mbytes/s
Dual bit data path = 27 Mbytes/s
Quad bit data path = 54 Mbytes/s
Executing code directly from flash memory is often called Execute-in-Place or XIP. By using S25FL1-K devices at the higher clock
rates supported, with QIO commands, the command read transfer rate can match or exceed traditional x8 or x16 parallel interface,
asynchronous, NOR flash memories, while reducing signal count dramatically. The Continuous Read Mode allows for random
memory access with as few as 8 clocks of overhead for each access, providing efficient XIP operation. The Wrapped Read mode
provides efficient instruction or data cache refill via a fast read of the critical byte that causes a cache miss, followed by reading all
other bytes in the same cache line in a single read command.
The S25FL1-K:
Support JEDEC standard manufacturer and device type identification.
Program pages of 256 bytes each. One to 256 bytes can be programmed in each Page Program operation. Pages can be erased
in groups of 16 (4-kB aligned sector erase), groups of 256 (64-kB aligned block erase), or the entire chip (chip erase).
The S25FL1-K devices operate on a single 2.6 V/2.7 V to 3.6 V power supply and all devices are offered in space-saving
packages.
Provides an ideal storage solution for systems with limited space, signal connections, and power. These memories offer flexibility
and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly
(XIP), and storing reprogrammable data.
Not Recommended for New Design
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1.1 Migration Notes
1.1.1 Features Comparison
The S25FL1-K is command set and footprint compatible with prior generation FL-K and FL-P families.
Notes:
1. S25FL-K family devices can erase 4-kB sectors in groups of 32 kB or 64 kB.
2. S25FL1-K family devices can erase 4-kB sectors in groups of 64 kB.
3. S25FL-P has either 64-kB or 256-kB uniform sectors depending on an ordering option.
4. Refer to individual data sheets for further details.
1.1.2 Known Feature Differences from Prior Generations
1.1.2.1 Secure Silicon Region (OTP)
The size and format (address map) of the OTP area is the same for the S25FL1-K and the S25FL-K but different for the S25FL-P.
FL Generations Comparison
Parameter S25FL1-K S25FL-K S25FL-P
Technology Node 90 nm 90 nm 90 nm
Architecture Floating Gate Floating Gate MirrorBit®
Release Date In Production In Production In Production
Density 16 Mbit - 64 Mbit 4 Mbit - 128 Mbit 32 Mbit - 256 Mbit
Bus Width x1, x2, x4 x1, x2, x4 x1, x2, x4
Supply Voltage 2.6 V / 2.7 V - 3.6 V 2.7 V - 3.6 V 2.7 V - 3.6 V
Normal Read Speed 6 MB/s (50 MHz) 6 MB/s (50 MHz) 5 MB/s (40 MHz)
Fast Read Speed 13.5 MB/s (108 MHz) 13 MB/s (104 MHz) 13 MB/s (104 MHz)
Dual Read Speed 27 MB/s (108 MHz) 26 MB/s (104 MHz) 20 MB/s (80 MHz)
Quad Read Speed 54 MB/s (108 MHz at 85°C/105°C) 52 MB/s (104 MHz) 40 MB/s (80 MHz)
Program Buffer Size 256B 256B 256B
Page Programming Time
(typ.) 700 µs (256B) 700 µs (256B) 1500 µs (256B)
Program Suspend / Resume Yes Yes No
Erase Sector Size 4 kB / 64 kB 4 kB / 32 kB / 64 kB 64 kB / 256 kB
Parameter Sector Size N/A N/A 4 kB
Sector Erase Time (typ.) 50 ms (4 kB), 500 ms (64 kB) 30 ms (4 kB), 150 ms (64 kB) 500 ms (64 kB)
Erase Suspend / Resume Yes Yes No
OTP Size 768B (3 x 256B) 768B (3 x 256B) 506B
Operating Temperature -40°C to +85°C / +105°C -40°C to +85°C -40°C to +85°C / +105°C
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 6 of 90
S25FL116K/S25FL132K/S25FL164K
1.1.2.2 Commands Not Supported
The following S25FL-K and S25FL-P commands are not supported:
Quad Page PGM (32h)
Half-Block Erase 32K (52h)
Word read Quad I/O (E7)
Octal Word Read Quad I/O (E3h)
MFID dual I/O (92h)
MFID quad I/O (94h)
Read Unique ID (4Bh)
1.1.2.3 New Features
The S25FL1-K introduces new features to low density SPI category memories:
Variable read latency (number of dummy cycles) for faster initial access time or higher clock rate read commands
Industrial Plus and Extended temperature range
Volatile configuration option in addition to legacy nonvolatile configuration
1.2 Glossary
Command. All information transferred between the host system and memory during one period while CS# is low. This includes
the instruction (sometimes called an operation code or opcode) and any required address, mode bits, latency cycles, or data.
Flash. The name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases large blocks of memory
bits in parallel, making the erase operation much faster than early EEPROM.
High. A signal voltage level ≥ VIH or a logic level representing a binary one (1).
Instruction. The 8-bit code indicating the function to be performed by a command (sometimes called an operation code or
opcode). The instruction is always the first 8 bits transferred from host system to the memory in any command.
Low. A signal voltage level VIL or a logic level representing a binary zero (0).
LSB. Least Significant Bit. Generally the right most bit, with the lowest order of magnitude value, within a group of bits of a
register or data value.
MSB. Most Significant Bit. Generally the left most bit, with the highest order of magnitude value, within a group of bits of a register
or data value.
nonvolatile. No power is needed to maintain data stored in the memory.
OPN. Ordering Part Number. The alphanumeric string specifying the memory device type, density, package, factory nonvolatile
configuration, etc. used to select the desired device.
Page. 256-byte aligned and length group of data.
PCB. Printed Circuit Board.
Register Bit References. Are in the format: Register_name[bit_number] or Register_name[bit_range_MSB: bit_range_LSB].
Sector. Erase unit size; all sectors are physically 4-kbytes aligned and length. Depending on the erase command used, groups of
physical sectors may be erased as a larger logical sector of 64 kbytes.
Write. An operation that changes data within volatile or nonvolatile registers bits or nonvolatile flash memory. When changing
nonvolatile data, an erase and reprogramming of any unchanged nonvolatile data is done, as part of the operation, such that the
nonvolatile data is modified by the write operation, in the same way that volatile data is modified – as a single operation. The
nonvolatile data appears to the host system to be updated by the single write command, without the need for separate commands
for erase and reprogram of adjacent, but unaffected data.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 7 of 90
S25FL116K/S25FL132K/S25FL164K
1.3 Other Resources
1.3.1 Cypress Flash Memory Roadmap
www.cypress.com/product-roadmaps/cypress-flash-memory-roadmap
1.3.2 Links to Software
www.cypress.com/software-and-drivers-cypress-flash-memory
1.3.3 Links to Application Notes
www.cypress.com/cypressappnotes
2. Hardware Interface
2.1 Serial Peripheral Interface with Multiple Input / Output (SPI-MIO)
Many memory devices connect to their host system with separate parallel control, address, and data signals that require a large
number of signal connections and larger package size. The large number of connections increase power consumption due to so
many signals switching and the larger package increases cost.
The S25FL1-K reduces the number of signals for connection to the host system by serially transferring all control, address, and data
information over 4 to 6 signals. This reduces the cost of the memory package, reduces signal switching power, and either reduces
the host connection count or frees host connectors for use in providing other features.
The S25FL1-K uses the industry standard single bit SPI and also supports commands for 2-bit (Dual) and 4-bit (Quad) wide serial
transfers. This multiple width interface is called SPI Multi-I/O or SPI-MIO.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 8 of 90
S25FL116K/S25FL132K/S25FL164K
3. Signal Descriptions
3.1 Input / Output Summary
Note
1. A signal name ending with the # symbol is active when low.
3.2 Address and Data Configuration
Traditional SPI single bit wide commands (Single or SIO) send information from the host to the memory only on the SI signal. Data
may be sent back to the host serially on the Serial Output (SO) signal.
Dual or Quad Output commands send information from the host to the memory only on the SI signal. Data will be returned to the
host as a sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input / Output (I/O) commands send information from the host to the memory as bit pairs on IO0 and IO1 or four bit
(nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or four bit (nibble) groups
on IO0, IO1, IO2, and IO3.
3.3 Serial Clock (SCK)
This input signal provides the synchronization reference for the SPI interface. Instructions, addresses, or data input are latched on
the rising edge of the SCK signal. Data output changes after the falling edge of SCK.
Table 1. Signal List
Signal Name Type Description
SCK Input Serial Clock.
CS# Input Chip Select.
SI (IO0) I/O Serial Input for single bit data commands. IO0 for Dual or Quad commands.
SO (IO1) I/O Serial Output for single bit data commands. IO1 for Dual or Quad commands.
WP# (IO2) I/O Write Protect in single bit or Dual data commands. IO2 in Quad mode. The signal has an internal
pull-up resistor and may be left unconnected in the host system if not used for Quad commands.
HOLD# (IO3) I/O
Hold (pause) serial transfer in single bit or Dual data commands. IO3 in Quad-I/O mode. The
signal has an internal pull-up resistor and may be left unconnected in the host system if not used
for Quad commands.
VCC Supply Core and I/O Power Supply.
VSS Supply Ground.
NC Unused
Not Connected. No device internal signal is connected to the package connector nor is there
any future plan to use the connector for a signal. The connection may safely be used for routing
space for a signal on a Printed Circuit Board (PCB). However, any signal connected to an NC
must not have voltage levels higher than VCC.
RFU Reserved
Reserved for Future Use. No device internal signal is currently connected to the package
connector but there is potential future use of the connector for a signal. It is recommended to not
use RFU connectors for PCB routing channels so that the PCB may take advantage of future
enhanced features in compatible footprint devices.
DNU Reserved Do Not Use. Do not use these connections for PCB signal routing channels. Do not connect any
host system signal to this connection.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 9 of 90
S25FL116K/S25FL132K/S25FL164K
3.4 Chip Select (CS#)
The chip select signal indicates when a command for the device is in process and the other signals are relevant for the memory
device. When the CS# signal is at the logic high state, the device is not selected and all input signals are ignored and all output
signals are high impedance. Unless an internal Program, Erase or Write Status Registers embedded operation is in progress, the
device will be in the Standby Power mode. Driving the CS# input to logic low state enables the device, placing it in the Active Power
mode. After Power-Up, a falling edge on CS# is required prior to the start of any command.
3.5 Serial Input (SI) / IO0
This input signal is used to transfer data serially into the device. It receives instructions, addresses, and data to be programmed.
Values are latched on the rising edge of serial SCK clock signal.
SI becomes IO0 - an input and output during Dual and Quad commands for receiving instructions, addresses, and data to be
programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK).
3.6 Serial Output (SO) / IO1
This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial SCK clock
signal.
SO becomes IO1, an input and output during Dual and Quad commands for receiving instructions, addresses, and data to be
programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK).
3.7 Write Protect (WP#) / IO2
When WP# is driven Low (VIL), while the Status Register Protect bits (SRP1 and SRP0) of the Status Registers (SR2[0] and SR1[7])
are set to 0 and 1 respectively, it is not possible to write to the Status Registers. This prevents any alteration of the Status Registers.
As a consequence, all the data bytes in the memory area that are protected by the Block Protect, TB, SEC, and CMP bits in the
status registers, are also hardware protected against data modification while WP# remains Low.
The WP# function is not available when the Quad mode is enabled (QE) in Status Register-2 (SR2[1]=1). The WP# function is
replaced by IO2 for input and output during Quad mode for receiving addresses, and data to be programmed (values are latched on
rising edge of the SCK signal) as well as shifting out data (on the falling edge of SCK).
WP# has an internal pull-up resistance; when unconnected, WP# is at VIH and may be left unconnected in the host system if not
used for Quad mode.
3.8 HOLD# / IO3
The HOLD# signal is used to pause any serial communications with the device without deselecting the device or stopping the serial
clock.
To enter the Hold condition, the device must be selected by driving the CS# input to the logic low state. It is required that the user
keep the CS# input low state during the entire duration of the Hold condition. This is to ensure that the state of the interface logic
remains unchanged from the moment of entering the Hold condition.
The Hold condition starts on the falling edge of the Hold (HOLD#) signal, provided that this coincides with SCK being at the logic low
state. If the falling edge does not coincide with the SCK signal being at the logic low state, the Hold condition starts whenever the
SCK signal reaches the logic low state. Taking the HOLD# signal to the logic low state does not terminate any Write, Program or
Erase operation that is currently in progress.
During the Hold condition, SO is in high impedance and both the SI and SCK input are Don't Care.
The Hold condition ends on the rising edge of the Hold (HOLD#) signal, provided that this coincides with the SCK signal being at the
logic low state. If the rising edge does not coincide with the SCK signal being at the logic low state, the Hold condition ends
whenever the SCK signal reaches the logic low state.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 10 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 3.1 Hold Condition
3.9 Core and I/O Signal Voltage Supply (VCC)
VCC is the voltage source for all device internal logic and input / output signals. It is the single voltage used for all device functions
including read, program, and erase.
3.10 Supply and Signal Ground (VSS)
VSS is the common voltage drain and ground reference for the device core, input signal receivers, and output drivers.
3.11 Not Connected (NC)
No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The
connection may safely be used for routing space for a signal on a Printed Circuit Board (PCB).
3.12 Reserved for Future Use (RFU)
No device internal signal is currently connected to the package connector but is there potential future use for the connector for a
signal. It is recommended to not use RFU connectors for PCB routing channels so that the PCB may take advantage of future
enhanced features in compatible footprint devices.
3.13 Do Not Use (DNU)
A device internal signal may be connected to the package connector. The connection may be used by Cypress for test or other
purposes and is not intended for connection to any host system signal. Any DNU signal related function will be inactive when the
signal is at VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS.
Do not use these connections for PCB signal routing channels. Do not connect any host system signal to these connections.
3.14 Block Diagrams
Figure 1. Bus Master and Memory Devices on the SPI Bus – Single Bit Data Path
Figure 2. Bus Master and Memory Devices on the SPI Bus – Dual Bit Data Path
CS#
SCK
HOLD#
SI_or_IO_(during_input)
SO_or_IO_(internal)
SO_or_IO_(external)
Valid Input Don’t Care Valid Input Don’t Care Valid Input
A B C D E
A B B C D E
Hold Condition
Standard Use
Hold Condition
Non-standard Use
SPI
Bus Master
HOLD#
WP#
SI
SO
SCK
CS2#
CS1#
SPI
Flash
SPI
Flash
HOLD#
WP#
SO
SI
SCK
CS2#
CS1#
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 11 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 3. Bus Master and Memory Devices on the SPI Bus – Quad Bit Data Path
SPI
Bus Master
HOLD#
WP#
IO1
IO0
SCK
CS2#
CS1#
SPI
Flash
SPI
Flash
HOLD#
WP#
IO0
IO1
SCK
CS2#
CS1#
SPI
Bus Master
IO3
IO2
IO1
IO0
SCK
CS2#
CS1#
SPI
Flash
SPI
Flash
IO3
IO2
IO0
IO1
SCK
CS2#
CS1#
Not Recommended for New Design
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4. Signal Protocols
4.1 SPI Clock Modes
The S25FL1-K can be driven by an embedded microcontroller (bus master) in either of the two following clocking modes.
Mode 0 with Clock Polarity (CPOL) = 0 and, Clock Phase (CPHA) = 0
Mode 3 with CPOL = 1 and, CPHA = 1
For these two modes, input data into the device is always latched in on the rising edge of the SCK signal and the output data is
always available from the falling edge of the SCK clock signal.
The difference between the two modes is the clock polarity when the bus master is in standby mode and not transferring any data.
SCK will stay at logic low state with CPOL = 0, CPHA = 0
SCK will stay at logic high state with CPOL = 1, CPHA = 1
Figure 4. SPI Modes Supported
Timing diagrams throughout the remainder of the document are generally shown as both mode 0 and 3 by showing SCK as both
high and low at the fall of CS#. In some cases a timing diagram may show only mode 0 with SCK low at the fall of CS#. In such a
case, mode 3 timing simply means clock is high at the fall of CS# so no SCK rising edge set up or hold time to the falling edge of
CS# is needed for mode 3.
SCK cycles are measured (counted) from one falling edge of SCK to the next falling edge of SCK. In mode 0 the beginning of the
first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge of SCK because SCK is already low
at the beginning of a command.
4.2 Command Protocol
All communication between the host system and S25FL1-K memory devices is in the form of units called commands.
All commands begin with an instruction that selects the type of information transfer or device operation to be performed. Commands
may also have an address, instruction modifier (mode), latency period, data transfer to the memory, or data transfer from the
memory. All instruction, address, and data information is transferred serially between the host system and memory device.
All instructions are transferred from host to memory as a single bit serial sequence on the SI signal.
Single bit wide commands may provide an address or data sent only on the SI signal. Data may be sent back to the host serially on
the SO signal.
Dual or Quad Output commands provide an address sent to the memory only on the SI signal. Data will be returned to the host as a
sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input / Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or, four bit (nibble)
groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0,
IO1, IO2, and IO3.
CPOL=0_CPHA=0_SCK
CPOL=1_CPHA=1_SCK
CS#
SI
SO
MSB
MSB
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Commands are structured as follows:
Each command begins with CS# going low and ends with CS# returning high. The memory device is selected by the host driving
the Chip Select (CS#) signal low throughout a command.
The serial clock (SCK) marks the transfer of each bit or group of bits between the host and memory.
Each command begins with an eight bit (byte) instruction. The instruction is always presented only as a single bit serial sequence
on the Serial Input (SI) signal with one bit transferred to the memory device on each SCK rising edge. The instruction selects the
type of information transfer or device operation to be performed.
The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces
in the device. The instruction determines the address space used. The address is a 24-bit, byte boundary, address. The address
transfers occur on SCK rising edge.
The width of all transfers following the instruction are determined by the instruction sent. Following transfers may continue to be
single bit serial on only the SI or Serial Output (SO) signals, they may be done in 2-bit groups per (dual) transfer on the IO0 and IO1
signals, or they may be done in 4-bit groups per (quad) transfer on the IO0-IO3 signals. Within the dual or quad groups the least
significant bit is on IO0. More significant bits are placed in significance order on each higher numbered IO signal. SIngle bits or
parallel bit groups are transferred in most to least significant bit order.
Some instructions send an instruction modifier called mode bits, following the address, to indicate that the next command will be
of the same type with an implied, rather than an explicit, instruction. The next command thus does not provide an instruction byte,
only a new address and mode bits. This reduces the time needed to send each command when the same command type is repeated
in a sequence of commands. The mode bit transfers occur on SCK rising edge.
The address or mode bits may be followed by write data to be stored in the memory device or by a read latency period before
read data is returned to the host.
Write data bit transfers occur on SCK rising edge.
SCK continues to toggle during any read access latency period. The latency may be zero to several SCK cycles (also referred to
as dummy cycles). At the end of the read latency cycles, the first read data bits are driven from the outputs on SCK falling edge at
the end of the last read latency cycle. The first read data bits are considered transferred to the host on the following SCK rising edge.
Each following transfer occurs on the next SCK rising edge.
If the command returns read data to the host, the device continues sending data transfers until the host takes the CS# signal high.
The CS# signal can be driven high after any transfer in the read data sequence. This will terminate the command.
At the end of a command that does not return data, the host drives the CS# input high. The CS# signal must go high after the
eighth bit, of a stand alone instruction or, of the last write data byte that is transferred. That is, the CS# signal must be driven high
when the number of clock cycles after CS# signal was driven low is an exact multiple of eight cycles. If the CS# signal does not go
high exactly at the eight SCK cycle boundary of the instruction or write data, the command is rejected and not executed.
All instruction, address, and mode bits are shifted into the device with the most significant bits (MSB) first. The data bits are
shifted in and out of the device MSB first. All data is transferred in byte units with the lowest address byte sent first. Following bytes
of data are sent in lowest to highest byte address order i.e. the byte address increments.
All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The
embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an embedded
operation. These are discussed in the individual command descriptions.
Depending on the command, the time for execution varies. A command to read status information from an executing command is
available to determine when the command completes execution and whether the command was successful.
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4.2.1 Command Sequence Examples
Figure 5. Stand Alone Instruction Command
Figure 6. Single Bit Wide Input Command
Figure 7. Single Bit Wide Output Command
Figure 8. Single Bit Wide I/O Command without Latency
Figure 9. Single Bit Wide I/O Command with Latency
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Data
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Data 1 Data 2
CS#
SCK
SI
SO
Phase
7654321023 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Data 1 Data 2
CS#
SCK
SI
SO
Phase
7654321023 1 0
7 6 5 4 3 2 1 0
Instruction Address Dummy Cycles Data 1
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Figure 10. Dual Output Command
Figure 11. Quad Output Command without Latency
Figure 12. Dual I/O Command
Figure 13. Quad I/O Command
Additional sequence diagrams, specific to each command, are provided in Section 10. Commands on page 63.
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7 6 5 4 3 2 1 0 23 1 0 4 0 4 0 4 0 4 0 4 0 4
5 1 5 1 5 1 5 1 5 1 5
6 2 6 2 6 2 6 2 6 2 6
7 3 7 3 7 3 7 3 7 3 7
Instruction Address Data 1 Data 2 Data 3 Data 4 Data 5 ...
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 22 2 0 6 4 2 0 6 4 2 0
23 3 1 7 5 3 1 7 5 3 1
Instruction Address Dummy Data 1 Data 2
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7654321020 4 0 4 4 0 4 0 4 0 4 0
21 5 1 5 5 1 5 1 5 1 5 1
22 6 2 6 6 2 6 2 6 2 6 2
23 7 3 7 7 3 7 3 7 3 7 3
Instruction Address Mode Dummy D1 D2 D3 D4
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4.3 Interface States
This section describes the input and output signal levels as related to the SPI interface behavior.
Legend:
Z = no driver - floating signal
HL = Host driving VIL
HH = Host driving VIH
HV = either HL or HH
X = HL or HH or Z
HT = toggling between HL and HH
ML = Memory driving VIL
MH = Memory driving VIH
MV = either ML or MH
4.3.1 Low Power Hardware Data Protection
When VCC is less than VWI the memory device will ignore commands to ensure that program and erase operations can not start
when the core supply voltage is out of the operating range.
4.3.2 Power-On (Cold) Reset
When the core voltage supply remains at or below the VCC (Low) voltage for > tPD time, then rises
to ≥ VWI the device will begin its Power-On-Reset (POR) process. POR continues until the end of tPUW. During tPUW the device does
not react to write commands. Following the end of tPUW the device transitions to the Interface Standby state and can accept write
commands. For additional information on POR see Section 5.7 Power-On (Cold) Reset on page 25.
Table 2. Interface States Summary
Interface State VCC SCK CS#
HOLD# /
IO3
WP# /
IO2
SO /
IO1 SI / IO0
Low Power
Hardware Data Protection < VWI XXXXZX
Power-On (Cold) Reset ≥ VCC (min) X HH X X Z X
Interface Standby ≥ VCC (min) X X X X Z X
Instruction Cycle ≥ VCC (min) HT HL HH HV Z HV
Hold Cycle ≥ VCC (min) HV or HT HL HL X X X
Single Input Cycle
Host to Memory Transfer ≥ VCC (min) HT HL HH X Z HV
Single Latency (Dummy) Cycle ≥ VCC (min) HT HL HH X Z X
Single Output Cycle
Memory to Host Transfer ≥ VCC (min) HT HL HH X MV X
Dual Input Cycle
Host to Memory Transfer ≥ VCC (min) HT HL HH X HV HV
Dual Latency (Dummy) Cycle ≥ VCC (min) HT HL HH X X X
Dual Output Cycle
Memory to Host Transfer ≥ VCC (min) HT HL HH X MV MV
Quad Input Cycle
Host to Memory Transfer ≥ VCC (min) HT HL HV HV HV HV
Quad Latency (Dummy) Cycle ≥ VCC (min) HT HL X X X X
Quad Output Cycle
Memory to Host Transfer ≥ VCC (min) HT HL MV MV MV MV
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4.3.3 Interface Standby
When CS# is high the SPI interface is in standby state. Inputs are ignored. The interface waits for the beginning of a new command.
The next interface state is Instruction Cycle when CS# goes low to begin a new command.
While in interface standby state the memory device draws standby current (ISB) if no embedded algorithm is in progress. If an
embedded algorithm is in progress, the related current is drawn until the end of the algorithm when the entire device returns to
standby current draw.
4.3.4 Instruction Cycle
When the host drives the MSB of an instruction and CS# goes low, on the next rising edge of SCK the device captures the MSB of
the instruction that begins the new command. On each following rising edge of SCK the device captures the next lower significance
bit of the 8-bit instruction. The host keeps CS# low, HOLD# high, and drives Write Protect (WP#) signal as needed for the
instruction. However, WP# is only relevant during instruction cycles of a Write Status Registers command and is otherwise ignored.
Each instruction selects the address space that is operated on and the transfer format used during the remainder of the command.
The transfer format may be Single, Dual output, Quad output, Dual I/O, or Quad I/O. The expected next interface state depends on
the instruction received.
Some commands are stand alone, needing no address or data transfer to or from the memory. The host returns CS# high after the
rising edge of SCK for the eighth bit of the instruction in such commands. The next interface state in this case is Interface Standby.
4.3.5 Hold
When Quad mode is not enabled (SR2[1]=0) the HOLD# / IO3 signal is used as the HOLD# input. The host keeps HOLD# low, SCK
may be at a valid level or continue toggling, and CS# is low. When HOLD# is low a command is paused, as though SCK were held
low. SI / IO0 and SO / IO1 ignore the input level when acting as inputs and are high impedance when acting as outputs during hold
state. Whether these signals are input or output depends on the command and the point in the command sequence when HOLD# is
asserted low.
When HOLD# returns high the next state is the same state the interface was in just before HOLD# was asserted low.
4.3.6 Single Input Cycle — Host to Memory Transfer
Several commands transfer information after the instruction on the single serial input (SI) signal from host to the memory device. The
dual output, and quad output commands send address to the memory using only SI but return read data using the I/O signals. The
host keeps CS# low, HOLD# high, and drives SI as needed for the command. The memory does not drive the Serial Output (SO)
signal.
The expected next interface state depends on the instruction. Some instructions continue sending address or data to the memory
using additional Single Input Cycles. Others may transition to Single Latency, or directly to Single, Dual, or Quad Output.
4.3.7 Single Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the instruction. During the latency cycles, the host keeps CS#
low, and HOLD# high. The Write Protect (WP#) signal is ignored. The host may drive the SI signal during these cycles or the host
may leave SI floating. The memory does not use any data driven on SI / I/O0 or other I/O signals during the latency cycles. In dual or
quad read commands, the host must stop driving the I/O signals on the falling edge at the end of the last latency cycle. It is
recommended that the host stop driving I/O signals during latency cycles so that there is sufficient time for the host drivers to turn off
before the memory begins to drive at the end of the latency cycles. This prevents driver conflict between host and memory when the
signal direction changes. The memory does not drive the Serial Output (SO) or I/O signals during the latency cycles.
The next interface state depends on the command structure i.e. the number of latency cycles, and whether the read is single, dual,
or quad width.
4.3.8 Single Output Cycle — Memory to Host Transfer
Several commands transfer information back to the host on the single Serial Output (SO) signal. The host keeps CS# low, and
HOLD# high. The Write Protect (WP#) signal is ignored. The memory ignores the Serial Input (SI) signal. The memory drives SO
with data.
The next interface state continues to be Single Output Cycle until the host returns CS# to high ending the command.
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4.3.9 Dual Input Cycle — Host to Memory Transfer
The Read Dual I/O command transfers two address or mode bits to the memory in each cycle. The host keeps CS# low, HOLD#
high. The Write Protect (WP#) signal is ignored. The host drives address on SI / IO0 and SO / IO1.
The next interface state following the delivery of address and mode bits is a Dual Latency Cycle if there are latency cycles needed or
Dual Output Cycle if no latency is required.
4.3.10 Dual Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the instruction. During the latency cycles, the host keeps CS#
low, and HOLD# high. The Write Protect (WP#) signal is ignored. The host may drive the SI / IO0 and SO / IO1 signals during these
cycles or the host may leave
SI / IO0 and SO / IO1 floating. The memory does not use any data driven on SI / IO0 and SO / IO1 during the latency cycles. The
host must stop driving SI / IO0 and SO / IO1 on the falling edge at the end of the last latency cycle. It is recommended that the host
stop driving them during all latency cycles so that there is sufficient time for the host drivers to turn off before the memory begins to
drive at the end of the latency cycles. This prevents driver conflict between host and memory when the signal direction changes. The
memory does not drive the SI / IO0 and SO / IO1 signals during the latency cycles.
The next interface state following the last latency cycle is a Dual Output Cycle.
4.3.11 Dual Output Cycle — Memory to Host Transfer
The Read Dual Output and Read Dual I/O return data to the host two bits in each cycle. The host keeps CS# low, and HOLD# high.
The Write Protect (WP#) signal is ignored. The memory drives data on the SI / IO0 and SO / IO1 signals during the dual output
cycles.
The next interface state continues to be Dual Output Cycle until the host returns CS# to high ending the command.
4.3.12 Quad Input Cycle — Host to Memory Transfer
The Read Quad I/O command transfers four address, mode, or data bits to the memory in each cycle. The host keeps CS# low, and
drives the I/O signals.
For Read Quad I/O the next interface state following the delivery of address and mode bits is a Quad Latency Cycle if there are
latency cycles needed or Quad Output Cycle if no latency is required.
4.3.13 Quad Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the Latency Control in the Status Register-3 (SR3[3:0]). During
the latency cycles, the host keeps CS# low. The host may drive the IO signals during these cycles or the host may leave the IO
floating. The memory does not use any data driven on I/O during the latency cycles. The host must stop driving the IO signals on the
falling edge at the end of the last latency cycle. It is recommended that the host stop driving them during all latency cycles so that
there is sufficient time for the host drivers to turn off before the memory begins to drive at the end of the latency cycles. This prevents
driver conflict between host and memory when the signal direction changes. The memory does not drive the IO signals during the
latency cycles.
The next interface state following the last latency cycle is a Quad output Cycle.
4.3.14 Quad Output Cycle — Memory to Host Transfer
The Read Quad Output and Read Quad I/O return data to the host four bits in each cycle. The host keeps CS# low. The memory
drives data on IO0-IO3 signals during the Quad output cycles.
The next interface state continues to be Quad Output Cycle until the host returns CS# to high ending the command.
4.4 Status Register Effects on the Interface
The Status Register-2, bit 1 (SR2[1]), selects whether Quad mode is enabled to ignore HOLD# and WP# and allow Read Quad
Output, and Read Quad I/O commands.
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4.5 Data Protection
Some basic protection against unintended changes to stored data are provided and controlled purely by the hardware design. These
are described below. Other software managed protection methods are discussed in the software section of this document.
4.5.1 Low Power
When VCC is less than VWI the memory device will ignore commands to ensure that program and erase operations can not start
when the core supply voltage is out of the operating range.
4.5.2 Power-Up
Program and erase operations continue to be prevented during the Power-Up to Write delay (tPUW) because no write command is
accepted until after tPUW.
4.5.3 Deep Power-Down (DPD)
In DPD mode the device responds only to the Resume from DPD command (RES ABh). All other commands are ignored during
DPD mode, thereby protecting the memory from program and erase operations.
4.5.4 Clock Pulse Count
The device verifies that all program, erase, and Write Status Registers commands consist of a clock pulse count that is a multiple of
eight before executing them. A command not having a multiple of 8 clock pulse count is ignored and no error status is set for the
command.
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5. Electrical Characteristics
5.1 Absolute Maximum Ratings
Notes
2. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not guaranteed. Exposure to absolute maximum
ratings may affect device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
3. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances
(RoHS) 2002/95/EU.
4. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 ohms, R2=500 ohms).
5.1.1 Input Signal Overshoot
During DC conditions, input or I/O signals should remain equal to or between VSS and VCC. During voltage transitions, inputs or I/Os
may overshoot VSS to negative VIOT or overshoot to positive VIOT, for periods up to 20 ns.
Figure 14. Maximum Negative Overshoot Waveform
Figure 15. Maximum Positive Overshoot Waveform
Table 3. Absolute Maximum Ratings
Parameters [2] Symbol Conditions Range Unit
Supply Voltage VCC –0.6 to +4.0 V
Voltage Applied to any Pin VIO Relative to Ground –0.6 to +4.0 V
Transient Voltage on any Pin VIOT < 20 ns Transient Relative to Ground –2.0 to 6.0 V
Storage Temperature TSTG –65 to +150 °C
Lead Temperature TLEAD [3] °C
Electrostatic Discharge Voltage VESD Human Body Model [4] –2000 to +2000 V
V
IL
V
IOT
< 20 ns
< 20 ns < 20 ns
V
IH
VIOT
< 20 ns
< 20 ns < 20 ns
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5.1.2 Latchup Characteristics
Note
5. Excludes power supply VCC. Test conditions: VCC = 3.0V, one connection at a time tested, connections not being tested are at VSS.
5.2 Thermal Resistance
5.3 Operating Ranges
Operating ranges define those limits between which functionality of the device is guaranteed.
Note
6. VCC voltage during read can operate across the min and max range but should not exceed ± 10% of the voltage used during programming or erase of the data being read.
Table 4. Latchup Specification
Description Min Max Unit
Input voltage with respect to VSS on all input only connections –1.0 VCC + 1.0 V
Input voltage with respect to VSS on all I/O connections –1.0 VCC + 1.0 V
VCC Current –100 +100 mA
Table 5. Thermal Resistance
Parameter Description SOA008 SOC008 FAB024 FAC024 WSON Unit
Theta JA Thermal resistance
(junction to ambient) 75 75 39 39 18 °C/W
Table 6. Operating Ranges
Parameter Symbol Conditions
Spec
UnitMin Max
Ambient Temperature TA Industrial -40 +85 °C
Industrial Plus -40 +105
Supply Voltage VCC Industrial and Industrial Plus Temp 2.7 3.6 V
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5.4 DC Electrical Characteristics
Note
7. Tested on sample basis and specified through design and characterization data. TA = 25°C, VCC = 3V.
5.4.1 Active Power and Standby Power Modes
The device is enabled and in the Active Power mode when Chip Select (CS#) is Low. When CS# is high, the device is disabled, but
may still be in an Active Power mode until all program, erase, and write operations have completed. The device then goes into the
Standby Power mode, and power consumption drops to ISB.
DC Electrical Characteristics
Parameter Symbol Conditions Min Typ
Max
Unit-40 to 85°C -40 to 105°C
Input Leakage ILI ±2 µA
I/O Leakage ILO ±2 µA
Standby Current ICC1 CS# = VCC, VIN =
GND or VCC 15 25 25 µA
Deep Power-Down Current
(S25FL116K) ICC2 CS# = VCC, VIN =
GND or VCC 2 5 5 µA
Deep Power-Down Current
(S25FL132K / S25FL164K) ICC2 CS# = VCC, VIN =
GND or VCC 2 8 10 µA
Current: Read Single / Dual /
Quad 1 MHz [5.4.1] ICC3
SCK = 0.1 VCC /
0.9 VCC
SO = Open
4 / 5 / 6 6 / 7.5 / 9 6 / 7.5 / 9 mA
Current: Read Single / Dual /
Quad 33 MHz [5.4.1] ICC3
SCK = 0.1 VCC /
0.9 VCC
SO = Open
6 / 7 / 8 9 / 10.5 / 12 9 / 10.5 / 12 mA
Current: Read Single / Dual /
Quad 50 MHz [5.4.1] ICC3
SCK = 0.1 VCC /
0.9 VCC
SO = Open
7 / 8 / 9 10 / 12 / 13.5 10 / 12 / 13.5 mA
Current: Read Single / Dual /
Quad 108 MHz [5.4.1] ICC3
SCK = 0.1 VCC /
0.9 VCC
SO = Open
12 / 14 /
16 18 / 22 / 25 18 / 22 / 25 mA
Current: Write Status Registers ICC4 CS# = V
CC 8 12 12mA
Current Page Program ICC5 CS# = VCC 20 25 25 mA
Current Sector / Block Erase ICC6 CS# = VCC 20 25 25 mA
Current Chip Erase ICC7 CS# = VCC 20 25 25 mA
Input Low Voltage (S25FL116K) VIL -0.5 V
CC x 0.2 VCC x 0.2 V
Input Low Voltage
(S25FL132K / S25FL164K) VIL -0.5 V
CC x 0.3 VCC x 0.3 V
Input High Voltage VIH V
CC x 0.7 VCC + 0.4 VCC + 0.4 V
Output Low Voltage VOL IOL = 100 µA VSS 0.2 0.2 V
IOL = 1.6 mA VSS 0.4 0.4
Output High Voltage VOH I
OH = –100 µA VCC – 0.2 VCC V
CC V
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5.5 AC Measurement Conditions
Figure 16. Test Setup
Notes
8. Output High-Z is defined as the point where data is no longer driven.
9. Input slew rate: 1.5 V/ns.
10. AC characteristics tables assume clock and data signals have the same slew rate (slope).
Figure 17. Input, Output, and Timing Reference Levels
5.5.1 Capacitance Characteristics
Notes
11. Sampled, not 100% tested.
12. Test conditions TA = 25°C, f = 1.0 MHz.
Table 7. AC Measurement Conditions
Symbol Parameter Min Max Unit
CLLoad Capacitance 30 pF
TR, TF Input Rise and Fall
Times 2.4 ns
Input Pulse Voltage 0.2 x VCC to 0.8 VCC V
Input Timing Ref Voltage 0.5 VCC V
Output Timing Ref
Voltage 0.5 VCC V
Device
Under
Te s t CL
Table 8. Capacitance
Parameter Test Conditions Min Max Unit
CIN Input Capacitance (applies to SCK, CS#) 1 MHz – 8 pF
COUT Output Capacitance (applies to All I/O) 1 MHz – 8 pF
VCC + 0.4V
0.7 x VCC
0.3 x VCC
- 0.5V
Timing Reference Level
0.5 x VCC
VCC
0.2V to 0.4V
Input Levels Output Levels
VCC - 0.2V
VSS
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5.6 Power-Up Timing
Note:
1. These parameters are characterized only.
Figure 18. Power-Up Timing and Voltage Levels
Figure 19. Power-Down and Voltage Drop
Table 9. Power-Up Timing and Voltage Levels
Parameter Symbol Spec Unit
Min Max
VCC (min) to CS# Low tVSL 10 –µs
Power-Up to Write — Time Delay Before Write Command tPUW 10 –ms
Write Inhibit Threshold Voltage VWI 2.4 –V
Power-Down Time tPD 10.0 –µs
VCC Power-Down Reset Threshold Voltage VCC Low 1.0 –V
VCC
VCC (max)
VCC (min)
VWI
Time
Reset
State
Read instructions
allowed
Device is fully
accessible
Program, Erase, and Write instructions are ignored
CS# must track VCC
tPUW
tVSL
t
PD
No Device Access Allowed
t
VSL
Device Read
Allowed
Vcc
(Max)
Vcc
(Min)
Time
Vcc
Vcc
(Low)
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5.7 Power-On (Cold) Reset
The device executes a Power-On Reset (POR) process until a time delay of tPUW has elapsed after the moment that VCC rises
above the VWI threshold. See Figure 18 on page 24, Figure 19 on page 24, and Table on page 24. The device must not be selected
(CS# to go high with VCC) until after (tVSL), i.e. no commands may be sent to the device until the end of tVSL.
5.8 AC Electrical Characteristics
Table 10. AC Electrical Characteristics: –40°C to +85°C/105°C at 2.7V to 3.6V
Description Symbol Alt
Spec
UnitMin Typ Max
Clock frequency for all SPI commands except for
Read Data command (03h) and Fast Read
command (0Bh)
2.7 V - 3.6V VCC
FRfCD.C. –108 MHz
Clock frequency for Read Data command (03h) fR D.C. –50 MHz
Clock frequency for all Fast Read commands SIO
and MIO fFR D.C. –108 MHz
Clock Period PSCK 9.25 – –ns
Clock High, Low Time for fFR tCLH, tCLL [13] tCH, tCL 3.3 – –ns
Clock High, Low Time for FRtCLH, tCLL [13] tCH, tCL 4.3 – –ns
Clock High, Low Time for fR t
CRLH, tCRLL [13] tCH, tCL 6 – –ns
Clock Rise Time tCLCH [14] tCRT 0.1 – –V/ns
Clock Fall Time tCHCL [14] tCFT 0.1 – –V/ns
CS# Active Setup Time relative to SCK tSLCH t
CSS 5 – –ns
CS# Not Active Hold Time relative to SCK tCHSL t
CSH 5 – –ns
Data In Setup Time tDVCH t
SU 2 – –ns
Data In Hold Time tCHDX t
HD 5 – –ns
CS# Active Hold Time relative to SCK tCHSH t
CSS 5 – –ns
CS# Not Active Setup Time relative to SCK tSHCH t
CSH 5 – –ns
CS# High Time tCS 10 – –ns
CS# Deselect Time (for Array Read -> Array Read) tSHSL1 t
CS1 7 – –ns
CS# Deselect Time (for Erase or Program -> Read
Status Registers) tSHSL2 t
CS2 40 – –ns
Volatile Status Register Write Time 40 – –
CS# Deselect Time (for Erase or Program ->
Suspend command) tSHSL3 t
CS3 130 – –ns
Output Disable Time tSHQZ [14] tDIS – –7 ns
Clock Low to Output Valid, 30 pF, 2.7V - 3.6V tCLQV1 t
V1 – –7 ns
Clock Low to Output Valid, 15 pF, 2.7V - 3.6V tCLQV1 t
V1 – –6 ns
Clock Low to Output Valid (for Read ID commands)
2.7V - 3.6V tCLQV2 t
V2 – –8.5 ns
Output Hold Time tCLQX t
HO 2 – –ns
HOLD# Active Setup Time relative to SCK tHLCH –5 – –ns
HOLD# Active Hold Time relative to SCK tCHHH –5 – –ns
HOLD# Not Active Setup Time relative to SCK tHHCH –5 – –ns
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 26 of 90
S25FL116K/S25FL132K/S25FL164K
Notes
13. Clock high + Clock low must be less than or equal to 1/fC.
14. Value guaranteed by design and / or characterization, not 100% tested in production.
15. Only applicable as a constraint for a Write Status Registers command when Status Register Protect 0 (SRP0) bit is set to 1. Or WPSEL bit = 1.
16. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number of bytes programmed.
17. All program and erase times are tested using a random data pattern.
18. For 10K Cycles. 85 ms at 100K cycles.
5.8.1 Clock Timing
Figure 20. Clock Timing
HOLD# Not Active Hold Time relative to SCK tCHHL –5 – –ns
HOLD# to Output Low-Z tHHQX [14] tLZ – –7ns
HOLD# to Output High-Z tHLQZ [14] tHZ – –12 ns
Write Protect Setup Time Before CS# Low tWHSL [15] tWPS 20 – –ns
Write Protect Hold Time After CS# High tSHWL [15] tWPH 100 – –ns
CS# High to Power-down Mode tDP [14] – – –3 µs
CS# High to Standby Mode without Electronic
Signature Read tRES1 [14] – – –3 µs
CS# High to Standby Mode with Electronic
Signature Read tRES2 [14] – – –1.8 µs
CS# High to next Command after Suspend tSUS [14] – – –20 µs
Write Status Registers Time tW – –2 30 [18] ms
Byte Program Time (First Byte) [16][17] tBP1 – –15 50 µs
Additional Byte Program Time (After First Byte)
[16][17] tBP2 – –2.5 12 µs
Page Program Time (105°C) [17] tPP – –0.7 3 ms
Sector Erase Time (4 kB) [17] tSE – –50 450 ms
Block Erase Time (64 kB) [17] t
BE2 – –500 2000 ms
Chip Erase Time 16 Mb / 32 Mb / 64 Mb [17] tCE – –11.2 / 32 / 64 64 / 128 / 256 s
End of Reset Instruction to CE# High tRCH [14] –40 – –ns
CE# High to next Instruction after Reset tRST [14] –1.5 – –µs
Table 10. AC Electrical Characteristics: –40°C to +85°C/105°C at 2.7V to 3.6V (Continued)
Description Symbol Alt
Spec
UnitMin Typ Max
VIL max
VIH min
tCH
tCRT tCFT
tCL
VCC / 2
PSCK
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 27 of 90
S25FL116K/S25FL132K/S25FL164K
5.8.2 Input / Output Timing
Figure 21. SPI Single Bit Input Timing
Figure 22. PI Single Bit Output Timing
Figure 23. SPI MIO Timing
CS#
SCK
SI
SO
MSB IN LSB IN
tCSS tCSS
tCSH tCSH
tCS
tSU
tHD
CS#
SCK
SI
SO MSB OUT LSB OUT
tCS
tHO tVtDIStLZ
CS#
SCK
IO MSB IN LSB IN MSB OUT LSB OUT
tCSH
tCSHtCSS
tCSS
tSU
tHD tLZ tHO
tCS
tDIStV
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 28 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 24. Hold Timing
Figure 25. WP# Input Timing
Figure 26. Software Reset Input Timing
CS#
SCK
HOLD#
SI_or_IO_(during_input)
SO_or_IO_(during_output) A B B C D E
tHZ tHZtLZ tLZ
tCHHL tCHHL
tHLCH tHLCH
tCHHH tCHHH
tHHCH tHHCH
Hold Condition
Standard Use Hold Condition
Non-standard Use
CS#
WP#
SCK
SI
SO
Phase
7654321076543210
Write Status Registers Instruction Input Data
tWPS tWPH
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Software Reset Enable Inst. (66h) Software Reset Instruction (99h) Reset to Next Instr.
tCS2
tRCH
tRST
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 29 of 90
S25FL116K/S25FL132K/S25FL164K
6. Physical Interface
6.1 Connection Diagrams
6.1.1 SOIC 8
Figure 27. 8-Pin Plastic Small Outline Package (SO)
6.1.2 SOIC 16 — S25FL164K
Figure 28. 16-Pin Plastic Small Outline Package (SO)
6.1.3 WSON 8
Figure 29. 8-Contact WSON (5 mm x 6 mm) Package / 8-Contact USON (4 mm x 4 mm) Package
1
2
3
4
CS#
SO/IO1
WP#/IO2
V
SS
SI/IO0
SCK
HOLD#/IO3
V
CC
5
6
7
8
1
2
3
4
16
15
14
13
HOLD#/IO3
V
CC
DNU
DNU DNU
DNU
SI/IO0
SCK
5
6
7
8
12
11
10
9WP#/IO2
V
SS
DNU
DNU
DNU
DNU
CS#
SO/IO1
1
2
3
4 5
6
7
8
CS#
SO/IO1 HOLD#/IO3
SCK
SI/IO0
V
SS
WSON
WP#/IO2
V
CC
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 30 of 90
S25FL116K/S25FL132K/S25FL164K
6.1.4 FAB024 24-Ball BGA
Figure 6.1 24-Ball BGA Package, 5x5 Ball Configuration, Top View
6.1.5 FAC024 24-Ball BGA Package
Figure 6.2 24-Ball BGA Package, 6x4 Ball Configuration, Top View
Note
19. Signal connections are in the same relative positions as FAB024 BGA, allowing a single PCB footprint to use either package.
6.1.6 Special Handling Instructions for FBGA Packages
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and / or data
integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time.
3241
NCNC RFU
B
D
E
A
C
VSSSCK VCCDNU
RFUCS# WP#/IO2DNU
SI/IO0SO/IO1 HOLD#/IO3DNU
NCNC RFUNC
NC
NC
NC
NC
NC
5
3241
NCNC RFU
B
D
E
A
C
VSSSCK VCCDNU
RFUCS# WP#/IO2DNU
SI/IO0SO/IO1 HOLD#/IO3DNU
NCNC RFUNC
NC
NCNC NCNC
F
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 31 of 90
S25FL116K/S25FL132K/S25FL164K
6.2 Physical Diagrams
6.2.1 SOA008 — 8-Lead Plastic Small Outline Package (150-mils Body Width)
4.90 BSC
D
0.40
20
10
0
N
L1
L2
E1
L
e
E
15°
0°
5°
8°
0.89
3.90 BSC
6.00 BSC
1.04 REF
0.25 BSC
8
1.27 BSC
1.32
-
0.10
0.28
0.31
0.17
0.17
c1
c
b1
b
A2
A1
A1.75
0.25
0.51
0.48
0.23
0.25
0° REF
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
1. ALL DIMENSIONS ARE IN MILLIMETERS.
NOTES:
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
LOWER RADIUS OF THE LEAD FOOT.
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
0.25 mm FROM THE LEAD TIP.
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
THE PLASTIC BODY.
PACKAGE LENGTH.
SEATING PLANE.
DIMENSIONS
SYMBOL MIN. NOM. MAX.
-
-
-
-
-
-
-
-
-
-
-
h0.25 0.50
-
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 32 of 90
S25FL116K/S25FL132K/S25FL164K
6.2.2 SOC008 — 8-Lead Plastic Small Outline Package (208-mils Body Width)
5.28 BSC
D
0.51
20
10
0
N
L1
L2
E1
L
e
E
15°
0°
5°
8°
0.76
5.28 BSC
8.00 BSC
1.36 REF
0.25 BSC
8
1.27 BSC
1.70
1.75
0.05
0.33
0.36
0.15
0.19
c1
c
b1
b
A2
A1
A
1.90
2.16
0.25
0.48
0.46
0.20
0.24
0-8° REF
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
1. ALL DIMENSIONS ARE IN MILLIMETERS.
NOTES:
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
LOWER RADIUS OF THE LEAD FOOT.
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
0.25 mm FROM THE LEAD TIP.
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
THE PLASTIC BODY.
PACKAGE LENGTH.
SEATING PLANE.
DIMENSIONS
SYMBOL MIN. NOM. MAX.
-
-
-
-
-
-
-
-
-
-
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 33 of 90
S25FL116K/S25FL132K/S25FL164K
6.2.3 SO3016 — 16-Lead Plastic Wide Outline Package (300-mils Body W idth)
0.33 C
0.25 M DCA-B
0.20 C A-B
0.10 C
0.10 C
0.10 C D
2X
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
1. ALL DIMENSIONS ARE IN MILLIMETERS.
NOTES:
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
LOWER RADIUS OF THE LEAD FOOT.
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
h
0
D
L2
N
e
A1
b
c
E
E1
A
0.75
10.30 BSC
1.27 BSC
0.30
10.30 BSC
0.33
0°
0.25
16
0.20
7.50 BSC
0.10
0.31
8°
0.51
2.65
2.35
A2 2.05 2.55
b1 0.27 0.48
0.30
0.20
c1
L1
0.40
L1.27
1.40 REF
0.25 BSC
05° 15°
00°
1
2-
DIMENSIONS
SYMBOL MIN. NOM. MAX.
-
-
-
-
-
-
-
-
-
-
-
-
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
0.25 mm FROM THE LEAD TIP.
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
THE PLASTIC BODY.
PACKAGE LENGTH.
SEATING PLANE.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 34 of 90
S25FL116K/S25FL132K/S25FL164K
6.2.4 WND008 — 8-Contact WSON 5 mm
6 mm
A MAXIMUM 0.15mm PULL BACK (L1) MAY BE PRESENT.
BILATERAL COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK
PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE.
MAXIMUM ALLOWABLE BURR IS 0.076mm IN ALL DIRECTIONS.
DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED
N IS THE TOTAL NUMBER OF TERMINALS.
ALL DIMENSIONS ARE IN MILLIMETERS.
DIMENSIONING AND TOLERANCING CONFORMS TO ASME Y14.5M-1994.
NOTES:
MAX. PACKAGE WARPAGE IS 0.05mm.
8
7.
6.
5
2.
4
3.
1.
9
10
THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE
DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA.
ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE.
8
4
1.27 BSC.
0.40
6.00 BSC
5.00 BSC
4.00
3.40
0.20 MIN.
0.75
0.02
0.60
A1
K
A
E2
D
E
D2
b
L
ND
N
e
0.00
3.30
0.70
3.90
0.35
0.55
3.50
0.05
0.80
4.10
0.45
0.65
A3 0.20 REF
DIMENSIONS
SYMBOL
MIN. NOM. MAX.
BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS
SLUG AS WELL AS THE TERMINALS.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 35 of 90
S25FL116K/S25FL132K/S25FL164K
6.2.5 UNF008 — 8- Co nt act USON 4 mm x 4 mm
JEDEC SPECIFICATION NO. REF: N/A
COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK
PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE.
DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED
N IS THE TOTAL NUMBER OF TERMINALS.
ALL DIMENSIONS ARE IN MILLIMETERS.
NOTES:
5.
4.
1.
3.
2.
6.
7.
THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE
DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA.
ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE.
8
4
0.80 BSC.
0.30
4.00 BSC
4.00 BSC
2.30
3.00
0.20
0.55
0.035
0.40
A1
K
A
E2
D
E
D2
b
L
ND
N
e
0.00
2.90
0.50
2.20
0.25
0.35
3.10
0.05
0.60
2.40
0.35
0.45
A3 0.152 REF
DIMENSIONS
SYMBOL
MIN. NOM. MAX.
BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS
SLUG AS WELL AS THE TERMINALS.
--
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 36 of 90
S25FL116K/S25FL132K/S25FL164K
6.2.6 FAB024 — 24-Ball Ball Grid Array (8 mm
6 mm) Package
METALLIZED MARK INDENTATION OR OTHER MEANS.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
e REPRESENTS THE SOLDER BALL GRID PITCH.
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
8.
9.
7
ALL DIMENSIONS ARE IN MILLIMETERS.
PARALLEL TO DATUM C.
5.
6
4.
3.
2.
1.
NOTES:
SD
b
eD
eE
ME
N
0.35
0.00 BSC
1.00 BSC
1.00 BSC
0.40
24
5
0.45
D1
MD
E1
E
D
A
A1 0.20
-
4.00 BSC
4.00 BSC
5
6.00 BSC
8.00 BSC
-
-1.20
-
SE 0.00 BSC
DIMENSIONS
SYMBOL MIN. NOM. MAX.
"SE" = eE/2.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 37 of 90
S25FL116K/S25FL132K/S25FL164K
6.2.7 FAC024 — 24-Ball Ball Grid Array (8 mm
6 mm) Package
METALLIZED MARK INDENTATION OR OTHER MEANS.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
e REPRESENTS THE SOLDER BALL GRID PITCH.
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
8.
9.
7
ALL DIMENSIONS ARE IN MILLIMETERS.
PARALLEL TO DATUM C.
5.
6
4.
3.
2.
1.
NOTES:
SD
b
eD
eE
ME
N
0.35
0.50 BSC
1.00 BSC
1.00 BSC
0.40
24
4
0.45
D1
MD
E1
E
D
A
A1 0.25
-
5.00 BSC
3.00 BSC
6
6.00 BSC
8.00 BSC
-
-1.20
-
SE 0.50 BSC
DIMENSIONS
SYMBOL MIN. NOM. MAX.
"SE" = eE/2.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 38 of 90
S25FL116K/S25FL132K/S25FL164K
7. Software Interface
This section discusses the features and behaviors most relevant to host system software that interacts with S25FL1-K memory
devices.
8. Address Space Maps
8.1 Overview
Many commands operate on the main flash memory array. Some commands operate on address spaces separate from the main
flash array. Each separate address space uses the full 24-bit address but may only define a small portion of the available address
space.
8.2 Flash Memory Array
The main flash array is divided into erase units called sectors. The sectors are uniform 4 kbytes in size.
Note: These are condensed tables that use a couple of sectors as references. There are address ranges that are not explicitly listed.
All 4-kB sectors have the pattern XXX000h-XXXFFFh.
S25FL116K Main Memory Address Map
Sector Size (kbyte) Sector Count Sector Range
Address Range
(Byte Address) Notes
4 512
SA0 000000h-000FFFh Sector Starting Address
—
Sector Ending Address
: :
SA511 1FF000h-1FFFFFh
S25FL132K Main Memory Address Map
Sector Size (kbyte) Sector Count Sector Range
Address Range
(Byte Address) Notes
4 1024
SA0 000000h-000FFFh Sector Starting Address
—
Sector Ending Address
: :
SA1023 3FF000h-3FFFFFh
S25FL164K Main Memory Address Map
Sector Size (kbyte) Sector Count Sector Range
Address Range
(Byte Address) Notes
4 2048
SA0 000000h-000FFFh Sector Starting Address
—
Sector Ending Address
: :
SA2047 7FF000h-7FFFFFh
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 39 of 90
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8.3 Security Registers
The S25FL1-K provides four 256-byte Security Registers. Each register can be used to store information that can be permanently
protected by programming One Time Programmable (OTP) lock bits in Status Register-2.
Register 0 is used by Cypress to store and protect the Serial Flash Discoverable Parameters (SFDP) information that is also
accessed by the Read SFDP command. See Section 8.4.
The three additional Security Registers can be erased, programmed, and protected individually. These registers may be used by
system manufacturers to store and permanently protect security or other important information separate from the main memory
array.
8.4 Security Register 0 — Serial Flash Discoverable Parameters (SFDP — JEDEC JESD216B)
This document defines the Serial Flash Discoverable Parameters (SFDP) revision B data structure for S25FL1-K family.
These data structure values are an update to the earlier revision SFDP data structure in the S25FL1-K family devices.
The Read SFDP (RSFDP) command (5Ah) reads information from a separate flash memory address space for device identification,
feature, and configuration information, in accord with the JEDEC JESD216B standard for Serial Flash Discoverable Parameters.
The SFDP data structure consists of a header table that identifies the revision of the JESD216 header format that is supported and
provides a revision number and pointer for each of the SFDP parameter tables that are provided. The parameter tables follow the
SFDP header. However, the parameter tables may be placed in any physical location and order within the SFDP address space.
The tables are not necessarily adjacent nor in the same order as their header table entries.
The SFDP header points to the following parameter tables:
Basic Flash
❐This is the original SFDP table. It has a few modified fields and new additional field added at the end of the table.
Sector Map
❐This is the original SFDP table. It has a few modified fields and new additional field added at the end of the table.
The physical order of the tables in the SFDP address space is: SFDP Header, Cypress Vendor Specific, Basic Flash, and Sector
Map.
The SFDP address space is programmed by Cypress and read-only for the host system.
Table 11. Security Register Addresses
Security Register Address
0 (SFDP) 000000h - 0000FF
1 001000h - 0010FF
2 002000h - 0020FF
3 003000h - 0030FF
Not Recommended for New Design
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8.4.1 Serial Flash Discove rable Parameters (SFDP) Address Map
The SFDP address space has a header starting at address zero that identifies the SFDP data structure and provides a pointer to
each parameter. One Basic Flash parameter is mandated by the JEDEC JESD216B standard.
8.4.2 SFDP Header Field Definition s
Table 12. SFDP Overview Map — Security Register 0
Byte Address Description
0000h Location zero within JEDEC JESD216B SFDP space – start of SFDP header
,,, Remainder of SFDP header followed by undefined space
0080h Start of SFDP parameter
... Remainder of SFDP JEDEC parameter followed by undefined space
00BFh End of SFDP space
00C0h to 00F7h Reserved space
00F8h to 00FFh Unique ID
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 41 of 90
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Table 13. SFDP Header
SFDP Byte
Address
SFDP Dword
Name Data Description
00h
SFDP Header
1st DWORD
53h
This is the entry point for Read SFDP (5Ah) command i.e. location zero within
SFDP space
ASCII “S”
01h 46h ASCII “F”
02h 44h ASCII “D”
03h 50h ASCII “P”
04h
SFDP Header
2nd DWORD
06h
SFDP Minor Revision (06h = JEDEC JESD216 Revision B)
– This revision is backward compatible with all prior minor revisions. Minor
revisions are changes that define previously reserved fields, add fields to the end,
or that clarify definitions of existing fields. Increments of the minor revision value
indicate that previously reserved parameter fields may have been assigned a new
definition or entire Dwords may have been added to the parameter table.
However, the definition of previously existing fields is unchanged and therefore
remain backward compatible with earlier SFDP parameter table revisions.
Software can safely ignore increments of the minor revision number, as long as
only those parameters the software was designed to support are used i.e.
previously reserved fields and additional Dwords must be masked or ignored. Do
not do a simple compare on the minor revision number, looking only for a match
with the revision number that the software is designed to handle. There is no
problem with using a higher number minor revision.
05h 01h
SFDP Major Revision
– This is the original major revision. This major revision is compatible with all
SFDP reading and parsing software.
06h 03h Number of Parameter Headers (zero based, 03h = 4 parameters)
07h FFh Unused
08h
Parameter
Header
0
1st DWORD
00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter)
09h 00h
Parameter Minor Revision (00h = JESD216)
– This older revision parameter header is provided for any legacy SFDP reading
and parsing software that requires seeing a minor revision 0 parameter header.
SFDP software designed to handle later minor revisions should continue reading
parameter headers looking for a higher numbered minor revision that contains
additional parameters for that software revision.
0Ah 01h Parameter Major Revision (01h = The original major revision - all SFDP software
is compatible with this major revision.
0Bh 09h Parameter Table Length (in double words = Dwords = 4-byte units) 09h = 9
Dwords
0Ch Parameter
Header
0
2nd DWORD
80h Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
JEDEC Basic SPI Flash parameter byte offset = 80h
0Dh 00h Parameter Table Pointer Byte 1
0Eh 00h Parameter Table Pointer Byte 2
0Fh FFh Parameter ID MSB (FFh = JEDEC defined legacy Parameter ID)
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 42 of 90
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8.4.3 JEDEC SFDP Basic SPI Flash Parameter
10h
Parameter
Header
1
1st DWORD
EFh Parameter ID LSB (EFh = Winbond Legacy SPI Flash Parameter)
11h 00h
Parameter Minor Revision (00h = JESD216)
– This older revision parameter header is provided for any legacy SFDP reading
and parsing software that requires seeing a minor revision 0 parameter header.
SFDP software designed to handle later minor revisions should continue reading
parameter headers looking for a later minor revision that contains additional
parameters.
12h 01h Parameter Major Revision (01h = The original major revision – all SFDP software
is compatible with this major revision.
13h 04h Parameter Table Length (in double words = Dwords = 4-byte units) 04h = 4
Dwords
14h Parameter
Header
1
2nd DWORD
80h Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
JEDEC Basic SPI Flash parameter byte offset = 0080h address
15h 00h Parameter Table Pointer Byte 1
16h 00h Parameter Table Pointer Byte 2
17h FFh Parameter ID MSB (FFh = JEDEC defined Parameter)
18h
Parameter
Header
2
1st DWORD
00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter)
19h 06h Parameter Minor Revision (06h = JESD216 Revision B)
1Ah 01h Parameter Major Revision (01h = The original major revision - all SFDP software
is compatible with this major revision.
1Bh 10h Parameter Table Length (in double words = Dwords = 4-byte units) 10h = 16
Dwords
1Ch Parameter
Header
2
2nd DWORD
80h Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
JEDEC Basic SPI Flash parameter byte offset = 0080h address
1Dh 00h Parameter Table Pointer Byte 1
1Eh 00h Parameter Table Pointer Byte 2
1Fh FFh Parameter ID MSB (FFh = JEDEC defined Parameter)
20h
Parameter
Header
3
1st DWORD
01h Parameter ID LSB (Cypress Vendor Specific ID parameter)
Legacy Manufacturer ID 01h = AMD / Cypress
21h 01h Parameter Minor Revision (01h = ID updated with SFDP Rev B table)
22h 01h Parameter Major Revision (01h = The original major revision - all SFDP software
that recognizes this parameter’s ID is compatible with this major revision.
23h 00h Parameter Table Length (in double words = Dwords = 4-byte units) 00h not
implemented
24h Parameter
Header
3
2nd DWORD
00h Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
25h 00h Parameter Table Pointer Byte 1
26h 00h Parameter Table Pointer Byte 2
27h 01h Parameter ID MSB (01h = JEDEC JEP106 Bank Number 1)
Table 13. SFDP Header (Continued)
SFDP Byte
Address
SFDP Dword
Name Data Description
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 43 of 90
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Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
00h
JEDEC Basic Flash
Parameter Dword-1
E5h
Start of SFDP JEDEC parameter
Bits 7:5 = unused = 111b
Bit 4:3 = 05h is volatile status register write instruction and status register
is default non-volatile= 00b
Bit 2 = Program Buffer > 64 bytes = 1
Bits 1:0 = Uniform 4-kB erase is supported through out the device = 01b
01h 20h Bits 15:8 = Uniform 4-kB erase instruction = 20h
02h F1h
Bit 23 = Unused = 1b
Bit 22 = Supports QOR Read (1-1-4), Yes = 1b
Bit 21 = Supports QIO Read (1-4-4),Yes =1b
Bit 20 = Supports DIO Read (1-2-2), Yes = 1b
Bit19 = Supports DDR, No= 0 b
Bit 18:17 = Number of Address Bytes 3 only = 00b
Bit 16 = Supports SIO and DIO Yes = 1b
Binary Field: 1-1-1-1-0-00-1
Nibble Format: 1111_0001
Hex Format: F1
03h FFh Bits 31:24 = Unused = FFh
04h
JEDEC Basic Flash
Parameter Dword-2
FFh
Density in bits, zero based,
16 Mb = 00FFFFFFh
32 Mb = 01FFFFFFh
64 Mb = 03FFFFFFh
05h FFh
06h FFh
07h
00h 16Mb
01h 32Mb
03h 64Mb
08h
JEDEC Basic Flash
Parameter Dword-3
44h
Bits 7:5 = number of QIO (1-4-4)Mode cycles = 010b
Bits 4:0 = number of Fast Read QIO Dummy cycles = 00100b for default
latency code
09h EBh Fast Read QIO (1-4-4)instruction code
0Ah 08h
Bits 23:21 = number of Quad Out (1-1-4) Mode cycles = 000b
Bits 20:16 = number of Quad Out Dummy cycles = 01000b for default
latency code
0Bh 6Bh Quad Out (1-1-4)instruction code
0Ch
JEDEC Basic Flash
Parameter Dword-4
08h
Bits 7:5 = number of Dual Out (1-1-2)Mode cycles = 000b
Bits 4:0 = number of Dual Out Dummy cycles = 01000b for default
latency code
0Dh 3Bh Dual Out (1-1-2) instruction code
0Eh 80h
Bits 23:21 = number of Dual I/O Mode cycles = 100b
Bits 20:16 = number of Dual I/O Dummy cycles = 00000b for default
latency code
0Fh BBh Dual I/O instruction code
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 44 of 90
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10h
JEDEC Basic Flash
Parameter Dword-5
EEh
Bits 7:5 RFU = 111b
Bit 4 = QPI (4-4-4) fast read commands not supported = 0b
Bits 3:1 RFU = 111b
Bit 0 = Dual All not supported = 0b
11h FFh Bits 15:8 = RFU = FFh
12h FFh Bits 23:16 = RFU = FFh
13h FFh Bits 31:24 = RFU = FFh
14h
JEDEC Basic Flash
Parameter Dword-6
FFh Bits 7:0 = RFU = FFh
15h FFh Bits 15:8 = RFU = FFh
16h FFh Bits 23:21 = number of Dual All Mode cycles = 111b
Bits 20:16 = number of Dual All Dummy cycles = 11111b
17h FFh Dual All instruction code
18h
JEDEC Basic Flash
Parameter Dword-7
FFh Bits 7:0 = RFU = FFh
19h FFh Bits 15:8 = RFU = FFh
1Ah FFh
Bits 23:21 = number of QPI Mode cycles = 111b not supported
Bits 20:16 = number of QPI Dummy cycles = 11111b for default latency
code
1Bh FFh QPI instruction code “Not supported FF”
1Ch
JEDEC Basic Flash
Parameter Dword-8
0Ch Sector type 1 size 2N Bytes = 4 kB = 0Ch (for Uniform 4 kB)
1Dh 20h Sector type 1 instruction
1Eh 10h Sector type 2 size 2N Bytes = 64 kB = 0Fh (for Uniform 64 kB)
1Fh D8h Sector type 2 instruction
20h
JEDEC Basic Flash
Parameter Dword-9
00h Sector type 3 size 2N Bytes = not supported = 00h
21h FFh Sector type 3 instruction = not supported = FFh
22h 00h Sector type 4 size 2N Bytes = not supported = 00h
23h FFh Sector type 4 instruction = not supported = FFh
Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 45 of 90
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24h JEDEC Basic Flash
Parameter Dword-10 42h
Bits 31:30 = Sector Type 4 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = RFU = 11b
Bits 29:25 = Sector Type 4 Erase, Typical time count = RFU = 11111b (typ
erase time = (count +1) * units) = RFU =11111
Bits 24:23 = Sector Type 3 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = RFU = 11b
Bits 22:18 = Sector Type 3 Erase, Typical time count = 00100b (typ erase
time = (count +1) * units) = RFU =11111
Bits 17:16 = Sector Type 2 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = 16 ms = 01b
Bits 15:11 = Sector Type 2 Erase, Typical time count = 11110b (typ erase
time = (count +1) * units) = 31*16 ms = 496 ms
Bits 10:9 = Sector Type 1 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = 16ms = 01b
Bits 8:4 = Sector Type 1 Erase, Typical time count = 00100b (typ erase
time = (count +1) * units) = 5*16 ms = 80 ms
Bits 3:0 = Count = (Max Erase time / (2 * Typical Erase time))- 1 = 0010b
Multiplier from typical erase time to maximum erase time = 6x multiplier
Max Erase time = 2*(Count +1)*Typ Erase time
Binary Fields: 11-11111-11-11111-01-11110-01-00100-0010
Nibble Format: 1111_1111_1111_1101_1111_0010_0100_0010
Hex Format: FF_FD_F2_42
25h F2h –
26h FDh –
27h FFh –
Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 46 of 90
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28h
JEDEC Basic Flash
Parameter Dword-11
81h Bits 23 = Byte Program Typical time, additional byte units (0b:1 µs, 1b:8
µs) = 1 µs = 0b
Bits 22:19 = Byte Program Typical time, additional byte count,
(count+1)*units, count = 0010b, (typ Program time = (count +1) * units) =
3*1 µs =3 µs
Bits 18 = Byte Program Typical time, first byte units (0b:1 µs, 1b:8 µs) = 8
µs = 1b
Bits 17:14 = Byte Program Typical time, first byte count, (count+1)*units,
count = 0001b, (typ Program time = (count +1) * units) = 2*8 µs = 16 µs
Bits 13 = Page Program Typical time units (0b:8 µs, 1b:64 µs) = 64 µs =
1b
Bits 12:8 = Page Program Typical time count, (count+1)*units, count =
01010b, (typ Program time = (count +1) * units) = 11*64 µs = 704 µs
Bits 7:4 = N = 1000b, Page size= 2N = 256B page
Bits 3:0 = Count = 0001b = (Max Page Program time / (2 * Typ Page
Program time))- 1
Multiplier from typical Page Program time to maximum Page Program
time = 4x multiplier
Max Page Program time = 2*(Count +1)*Typ Page Program time
Binary Fields: 0-0010-1-0001-1-01010-1000-0001
Nibble Format: 0001_0100_0110_1010_1000_0001
Hex Format: 14_6A_81
29h 6Ah
2Ah 14h
2Bh
C2h 16Mb
C7h 32Mb
CFh 64Mb
16 Mb = 1100_0010b = C2h
Bit 31 Reserved = 1b
Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms,
10b: 4 s, 11b: 64 s) = 4s = 10b
Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, count =
00010b, (typ Program time = (count +1) * units) = 3*4s = 12S
32 Mb = 1100_0111b = C7h
Bit 31 Reserved = 1b
Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms,
10b: 4 s, 11b: 64 s) = 4s = 10b
Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, count =
00111b, (typ Program time = (count +1) * units) = 8*4s = 32s
64 Mb = 1100_1111b = CFh
Bit 31 Reserved = 1b
Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms,
10b: 4 s, 11b: 64 s) = 4s = 10b
Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, count =
01111b, (typ Program time = (count +1) * units) = 16*4S = 64S
Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 47 of 90
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2Ch
JEDEC Basic Flash
Parameter Dword-12
CCh Bit 31 = Suspend and Resume supported = 0b
Bits 30:29 = Suspend in-progress erase max latency units (00b: 128ns,
01b: 1us, 10b: 8 µs, 11b: 64 µs) = 1 µs= 01b
Bits 28:24 = Suspend in-progress erase max latency count = 10011b,
max erase suspend latency = (count +1) * units = 20*1 µs = 20 µs
Bits 23:20 = Erase resume to suspend interval count = 0001b, interval =
(count +1) * 64 µs = 2 * 64 µs = 128 µs
Bits 19:18 = Suspend in-progress program max latency units (00b:
128ns, 01b: 1us, 10b: 8 µs, 11b: 64 µs) = 1 µs= 01b
Bits 17:13 = Suspend in-progress program max latency count = 10011b,
max erase suspend latency = (count +1) * units = 20*1 µs = 20 µs
Bits 12:9 = Program resume to suspend interval count = 0001b, interval =
(count +1) * 64 µs = 2 * 64 µs = 128 µs
Bit 8 = RFU = 1b
Bits 7:4 = Prohibited operations during erase suspend
= xxx0b: May not initiate a new erase anywhere (erase nesting not
permitted)
+ xx0xb: May not initiate a page program anywhere
+ x1xxb: May not initiate a read in the erase suspended sector size
+ 1xxxb: The erase and program restrictions in bits 5:4 are sufficient
= 1100b
Bits 3:0 = Prohibited Operations During Program Suspend
= xxx0b: May not initiate a new erase anywhere (erase nesting not
permitted)
+ xx0xb: May not initiate a new page program anywhere (program
nesting not permitted)
+ x1xxb: May not initiate a read in the program suspended page size
+ 1xxxb: The erase and program restrictions in bits 1:0 are sufficient
= 1100b
Binary Fields: 0-01-10011-0001-01-10011-0001-1-1100-1100
Nibble Format: 0011_0011_0001_0110_0110_0011_1100_1100
Hex Format: 33_16_63_CC
2Dh 63h
2Eh 16h
2Fh 33h
30h
JEDEC Basic Flash
Parameter Dword-13
7Ah Bits 31:24 = Erase Suspend Instruction = 75h
Bits 23:16 = Erase Resume Instruction = 7Ah
Bits 15:8 = Program Suspend Instruction = 75h
Bits 7:0 = Program Resume Instruction = 7Ah
31h 75h
32h 7Ah
33h 75h
34h
JEDEC Basic Flash
Parameter Dword-14
F7h Bit 31 = Deep Power-Down Supported = 0
Bits 30:23 = Enter Deep Power-Down Instruction = B9h
Bits 22:15 = Exit Deep Power-Down Instruction = ABh
Bits 14:13 = Exit Deep Power-Down to next operation delay units = (00b:
128 ns, 01b: 1 µs, 10b: 8 µs, 11b: 64 µs) = 1 µs = 01b
Bits 12:8 = Exit Deep Power-Down to next operation delay count =
00010b, Exit Deep Power-Down to next operation delay =
(count+1)*units = 3*1 µs=3 µs
Bits 7:4 = RFU = 1111b
Bit 3:2 = Status Register Polling Device Busy
= 01b: Legacy status polling supported = Use legacy polling by reading
the Status Register with 05h instruction and checking WIP bit[0]
(0=ready; 1=busy).
Bits 1:0 = RFU = 11b
Binary Fields: 0-10111001-10101011-01-00010-1111-01-11
Nibble Format: 0101_1100_1101_0101_1010_0010_1111_0111
Hex Format: 5C_D5_A2_F7
35h A2h
36h D5h
37h 5Ch
Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 48 of 90
S25FL116K/S25FL132K/S25FL164K
38h
JEDEC Basic Flash
Parameter Dword-15
00h Bits 31:24 = RFU = FFh
Bit 23 = Hold and WP Disable = not supported = 0b
Bits 22:20 = Quad Enable Requirements
= 101b: QE is bit 1 of the status register 2. Status register 1 is read using
Read Status instruction 05h. Status register 2 is read using instruction
35h. QE is set via Write Status instruction 01h with two data bytes where
bit 1 of the second byte is one. It is cleared via Write Status with two data
bytes where bit 1 of the second byte is zero.
Bits 19:16 0-4-4 Mode Entry Method
= xxx1b: Mode Bits[7:0] = A5h Note: QE must be set prior to using this
mode
+ x0xxb: Mode Bits[7:0] = Axh
+ 1xxxb: RFU
= 1001b
Bits 15:10 0-4-4 Mode Exit Method
= xx_xxx1b: Mode Bits[7:0] = 00h will terminate this mode at the end of
the current read operation
+ xx_1xxxb: Input Fh (mode bit reset) on DQ0-DQ3 for 8 clocks. This will
terminate the mode prior to the next read operation.
+ 11_x1xx: RFU
= 111101
Bit 9 = 0-4-4 mode supported = 1
Bits 8:4 = 4-4-4 mode enable sequences = 0_0000b: not supported
Bits 3:0 = 4-4-4 mode disable sequences = 0000b: not supported
Binary Fields: 11111111-0-101-1001-111101-1-00000-0000
Nibble Format: 1111_1111_0101_1001_1111_0110_0000_0000
Hex Format: FF_59_F6_00
39h F6h
3Ah 59h
3Bh FFh
Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 49 of 90
S25FL116K/S25FL132K/S25FL164K
3Ch
JEDEC Basic Flash
Parameter Dword-16
E8h Bits 31:24 = Enter 4-Byte Addressing
= xxxx_xxx1b:issue instruction B7 (preceding write enable not required
+ xx1x_xxxxb: Supports dedicated 4-byte address instruction set.
Consult vendor data sheet for the instruction set definition or look for 4-
byte Address Parameter Table.
+ 1xxx_xxxxb: Reserved
= 10000000b not supported
Bits 23:14 = Exit 4-byte Addressing
= xx_xxxx_xxx1b:issue instruction E9h to exit 4-byte address mode
(Write enable instruction 06h is not required)
+ xx_xx1x_xxxxb: Hardware reset
+ xx_x1xx_xxxxb: Software reset (see bits 13:8 in this DWORD)
+ xx_1xxx_xxxxb: Power cycle
+ x1_xxxx_xxxxb: Reserved
+ 1x_xxxx_xxxxb: Reserved
= 11_0000_0000b not supported
Bits 13:8 = Soft Reset and Rescue Sequence Support
= x1_xxxxb: issue reset enable instruction 66h, then issue reset
instruction 99h. The reset enable, reset sequence may be issued on 1,2,
or 4 wires depending on the device operating mode
= 01_0000b
Bit 7 = RFU = 1
Bits 6:0 = Volatile or nonvolatile Register and Write Enable Instruction for
Status Register 1
= xxx_1xxxb: nonvolatile/Volatile status register 1 powers-up to last
written value in the nonvolatile status register, use instruction 06h to
enable write to nonvolatile status register. Volatile status register may be
activated after power-up to override the nonvolatile status register, use
instruction 50h to enable write and activate the volatile status register.
+ x1x_xxxxb: Reserved
+ 1xx_xxxxb: Reserved
= 1101000b
Binary Fields: 10000000-1100000000-010000-1-1101000
Nibble Format: 1000_0000_1100_0000_0001_0000_1110_1000
Hex Format: 80_C0_10_E8
3Dh 10h
3Eh C0h
3Fh 80h
Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 50 of 90
S25FL116K/S25FL132K/S25FL164K
8.5 Status Registers
Status Register-1 (SR1) and Status Register-2 (SR2) can be used to provide status on the availability of the flash memory array, if
the device is write enabled or disabled, the state of write protection, Quad SPI setting, Security Register lock status, and Erase /
Program Suspend status.
SR1 and SR2 contain nonvolatile bits in locations SR1[7:2] and SR2[6:0] that control sector protection, OTP Register Protection,
Status Register Protection, and Quad mode. Bit locations SR2[7], SR1[1], and SR1[0] are read only volatile bits for suspend, write
enable, and busy status; these are updated by the memory control logic. The SR1[1] write enable bit is set only by the Write Enable
(06h) command and cleared by the memory control logic when an embedded operation is completed.
Write access to the nonvolatile Status Register bits is controlled by the state of the nonvolatile Status Register Protect bits SR1[7]
and SR2[0] (SRP0, SRP1), the Write Enable command (06h) preceding a Write Status Registers command, and while Quad mode
is not enabled, the WP# pin.
A volatile version of bits SR2[6], SR2[1], and SR1[7:2] that control sector protection and Quad Mode are used to control the behavior
of these features after power up. During power up or software reset, these volatile bits are loaded from the nonvolatile version of the
Status Register bits. The Write Enable for Volatile Status Register (50h) command can be used to write these volatile bits when the
command is followed by a Write Status Registers (01h) command. This gives more flexibility to change the system configuration and
memory protection schemes quickly without waiting for the typical nonvolatile bit write cycles or affecting the endurance of the Status
Register nonvolatile bits.
Write access to the volatile SR1 and SR2 Status Register bits is controlled by the state of the nonvolatile Status Register Protect bits
SR1[7] and SR2[0] (SRP0, SRP1), the Write Enable for Volatile Status Register command (50h) preceding a Write Status Registers
command, and while Quad mode is not enabled, the WP# pin.
Status Register-3 (SR3) is used to configure and provide status on the variable read latency, and Quad IO wrapped read features.
Write access to the volatile SR3 Status Register bits is controlled by Write Enable for Volatile Status Register command (50h)
preceding a Write Status Register command. The SRP bits do not protect SR3.
Table 15. Status Register-1 (SR1)
Bits
Field
Name Function Type Default State Description
7SRP0
Status
Register
Protect 0
Nonvolatile and
Volatile versions
0
0 = WP# input has no effect or Power Supply Lock
Down mode
1 = WP# input can protect the Status Register or OTP
Lock Down
See Table on page 58.
6 SEC Sector / Block
Protect 0
0 = BP2-BP0 protect 64-kB blocks
1 = BP2-BP0 protect 4-kB sectors
See Table 20 on page 54 and Table 21 on page 55 for
protection ranges.
5TB
Top / Bott om
Protect 0
0 = BP2-BP0 protect from the Top down
1 = BP2-BP0 protect from the Bottom up
See Table 20 on page 54 and Table 21 on page 55 for
protection ranges.
4BP2
Block Protect
Bits
0000b = No protection
See Table 20 on page 54 and Table 21 on page 55 for
protection ranges.
3BP1 0
2BP0 0
1WEL
Write Enable
Latch Volatile, Read only 0
0 = Not Write Enabled, no embedded operation can
start
1 = Write Enabled, embedded operation can start
0BUSY
Embedded
Operation
Status
Volatile, Read only 0 0 = Not Busy, no embedded operation in progress
1 = Busy, embedded operation in progress
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 51 of 90
S25FL116K/S25FL132K/S25FL164K
Note
20. LB0 value should be considered don't care for read. This bit is set to 1.
Table 16. Status Register-2 (SR2)
Bits Field Name Function Type Default State Description
7SUS
Suspend
Status Volatile, Read Only 0 0 = Erase / Program not suspended
1 = Erase / Program suspended
6 CMP Complement
Protect
nonvolatile and
Volatile versions 0
0 = Normal Protection Map
1 = Inverted Protection Map
See Table 20 on page 54 and Table 21 on page 55
for protection ranges.
5LB3
Security
Register
Lock Bits
OTP
0 OTP Lock Bits 3:0 for Security Registers 3:0
0 = Security Register not protected
1 = Security Register protected
Security register 0 contains the Serial Flash
Discoverable Parameters and is always
programmed and locked by Cypress.
4LB2 0
3LB1 0
2LB0 1
1 QE Quad Enable
nonvolatile and
Volatile versions
0
(For all model
numbers
except ‘Q1’)
0 = Quad Mode Not Enabled, the WP# pin and
HOLD# are enabled
1 = Quad Mode Enabled, the IO2 and IO3 pins are
enabled, and WP# and HOLD# functions are
disabled
1
(For model
number ‘Q1’)
1 = Quad Mode Enabled and can not be changed,
the IO2 and IO3 pins are enabled, and WP# and
HOLD# functions are disabled
0SRP1
Status
Register
Protect 1
0
0 = SRP1 selects whether WP# input has effect on
protection of the status register
1 = SRP1 selects Power Supply Lock Down or OTP
Lock Down mode
See Table on page 58.
Table 17. Status Register-3 (SR3)
Bits Field Name Function Type Default State Description
7 RFU Reserved 0 Reserved for Future Use
6 W6
Burst Wrap
Length
Volatile
1 00 = 8-byte wrap. Data read starts at the initial address
and wraps within an aligned 8-byte boundary.
01 = 16-byte wrap. Data read starts at the initial address
and wraps within an aligned 16-byte boundary.
10 = 32-byte wrap. Data read starts at the initial address
and wraps within an aligned 32-byte boundary.
11 = 64-byte wrap. Data read starts at the initial address
and wraps within an aligned 64-byte boundary.
5W5 1
4W4
Burst Wrap
Enable 10 = Wrap Enabled
1 = Wrap Disabled
3
Latency
Control (LC)
Variable Read
Latency Control
0Defines the number of read latency cycles in Fast Read,
Dual Out, Quad Out, Dual IO, and Quad IO commands.
Binary values for 1 to 15 latency cycles. A value of zero
disables the variable latency mode.
20
10
00
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 52 of 90
S25FL116K/S25FL132K/S25FL164K
8.5.1 BUSY
BUSY is a read only bit in the Status Register (SR1[0]) that is set to a 1 state when the device is executing a Page Program, Sector
Erase, Block Erase, Chip Erase, Write Status Registers or Erase / Program Security Register command. During this time the device
will ignore further commands except for the Software Reset, Read Status Register and Erase / Program Suspend commands (see
tW, tPP, tSE, tBE, and tCE in Section 5.8 AC Electrical Characteristics on page 25). When the program, erase or write status / security
register command has completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for further commands.
8.5.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the Status Register (SR1[1]) that is set to 1 after executing a Write Enable Command.
The WEL status bit is cleared to 0 when the device is write disabled. A write disable state occurs upon power-up or after any of the
following commands: Write Disable, Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Registers, Erase Security
Register and Program Security Register. The WEL status bit is cleared to 0 even when a program or erase operation is prevented by
the block protection bits. The WEL status bit is also cleared to 0 when a program or erase operation is suspended. The WEL status
bit is set to 1 when a program or erase operation is resumed.
8.5.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are nonvolatile read / write bits in the Status Register (SR1[4:2]) that provide Write
Protection control and status. Block Protect bits can be set using the Write Status Registers Command (see tW in Section 5.8 AC
Electrical Characteristics on page 25). All, none or a portion of the memory array can be protected from Program and Erase
commands (see Section 8.5.7 Block Protection Maps on page 53). The factory default setting for the Block Protection Bits is 0 (none
of the array is protected.)
8.5.4 Top / Bottom Block Protect (TB)
The nonvolatile Top / Bottom bit (TB SR1[5]) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB=0) or the
Bottom (TB=1) of the array as shown in Section 8.5.7 Block Protection Maps on page 53. The factory default setting is TB=0. The TB
bit can be set with the Write Status Registers Command depending on the state of the SRP0, SRP1 and WEL bits.
8.5.5 Sector / Block Protect (SEC)
The nonvolatile Sector / Block Protect bit (SEC SR1[6]) controls if the Block Protect Bits (BP2, BP1, BP0) protect either 4-kB Sectors
(SEC=1) or 64-kB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array as shown in Section 8.5.7 Block Protection
Maps on page 53. The default setting is SEC=0.
8.5.6 Complement Protect (CMP)
The Complement Protect bit (CMP SR2[6]) is a nonvolatile read / write bit in the Status Register (SR2[6]). It is used in conjunction
with SEC, TB, BP2, BP1 and BP0 bits to provide more flexibility for the array protection. Once CMP is set to 1, previous array
protection set by SEC, TB, BP2, BP1 and BP0 will be reversed. For instance, when CMP=0, a top 4-kB sector can be protected
while the rest of the array is not; when CMP=1, the top 4-kB sector will become unprotected while the rest of the array become read-
only. Refer to Section 8.5.7 Block Protection Maps on page 53 for details. The default setting is CMP=0.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 53 of 90
S25FL116K/S25FL132K/S25FL164K
8.5.7 Block Protection Maps
Notes
21. X = don’t care.
22. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
Table 18. FL116K Block Protection (CMP = 0)
Status Register [21] S25FL1-K (16 Mbit) Block Protection (CMP=0) [22]
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses
Protected
Density Protected Portion
X X 0 0 0 None None None None
0 0 0 0 1 31 1F0000h – 1FFFFFh 64 kB Upper 1/32
0 0 0 1 0 30 and 31 1E0000h – 1FFFFFh 128 kB Upper 1/16
0 0 0 1 1 28 thru 31 1C0000h – 1FFFFFh 256 kB Upper 1/8
0 0 1 0 0 24 thru 31 180000h – 1FFFFFh 512 kB Upper 1/4
0 0 1 0 1 16 thru 31 100000h – 1FFFFFh 1 MB Upper 1/2
0 1 0 0 1 0 000000h – 00FFFFh 64 kB Lower 1/32
0 1 0 1 0 0 and 1 000000h – 01FFFFh 128 kB Lower 1/16
0 1 0 1 1 0 thru 3 000000h – 03FFFFh 256 kB Lower 1/8
0 1 1 0 0 0 thru 7 000000h – 07FFFFh 512 kB Lower 1/4
0 1 1 0 1 0 thru 15 000000h – 0FFFFFh 1 MB Lower 1/2
X X 1 1 X 0 thru 31 000000h – 1FFFFFh 2 MB All
1 0 0 0 1 31 1FF000h – 1FFFFFh 4 kB Upper 1/512
1 0 0 1 0 31 1FE000h – 1FFFFFh 8 kB Upper 1/256
1 0 0 1 1 31 1FC000h – 1FFFFFh 16 kB Upper 1/128
1 0 1 0 X 31 1F8000h – 1FFFFFh 32 kB Upper 1/64
1 1 0 0 1 0 000000h – 000FFFh 4 kB Lower 1/512
1 1 0 1 0 0 000000h – 001FFFh 8 kB Lower 1/256
1 1 0 1 1 0 000000h – 003FFFh 16 kB Lower 1/128
1 1 1 0 X 0 000000h – 007FFFh 32 kB Lower 1/64
Table 19. FL116K Block Protection (CMP = 1)
Status Register [23] S25FL1-K (16 Mbit) Block Protection (CMP=1) [24]
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses Protected
Density Protected Portion
X X 0 0 0 0 thru 31 000000h – 1FFFFFh All All
0 0 0 0 1 0 thru 30 000000h – 1EFFFFh 1,984 kB Lower 31/32
0 0 0 1 0 0 thru 29 000000h – 1DFFFFh 1,920 kB Lower 15/16
0 0 0 1 1 0 thru 27 000000h – 1BFFFFh 1,792 kB Lower 7/8
0 0 1 0 0 0 thru 23 000000h – 17FFFFh 1,536 kB Lower 3/4
0 0 1 0 1 0 thru 15 000000h – 0FFFFFh 1 MB Lower 1/2
0 1 0 0 1 1 thru 31 010000h – 1FFFFFh 1,984 kB Upper 31/32
0 1 0 1 0 2 and 31 020000h – 1FFFFFh 1,920 kB Upper 15/16
0 1 0 1 1 4 thru 31 040000h – 1FFFFFh 1,792 kB Upper 7/8
0 1 1 0 0 8 thru 31 080000h – 1FFFFFh 1,536 kB Upper 3/4
0 1 1 0 1 16 thru 31 100000h – 1FFFFFh 1 MB Upper 1/2
X X 1 1 X None None None None
1 0 0 0 1 0 thru 31 000000h – 1FEFFFh 2,044 kB Lower 511/512
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 54 of 90
S25FL116K/S25FL132K/S25FL164K
Notes
23. X = don’t care.
24. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
Notes
25. X = don’t care.
26. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
1 0 0 1 0 0 thru 31 000000h – 1FDFFFh 2,040 kB Lower 255/256
1 0 0 1 1 0 thru 31 000000h – 1FBFFFh 2,032 kB Lower 127/128
1 0 1 0 X 0 thru 31 000000h – 1F7FFFh 2,016 kB Lower 63/64
1 1 0 0 1 0 thru 31 001000h – 1FFFFFh 2,044 kB Upper 511/512
1 1 0 1 0 0 thru 31 002000h – 1FFFFFh 2,040 kB Upper 255/256
1 1 0 1 1 0 thru 31 004000h – 1FFFFFh 2,032 kB Upper 127/128
1 1 1 0 X 0 thru 31 008000h – 1FFFFFh 2,016 kB Upper 63/64
Table 19. FL116K Block Protection (CMP = 1) (Continued)
Status Register [23] S25FL1-K (16 Mbit) Block Protection (CMP=1) [24]
Table 20. FL132K Block Protection (CMP = 0)
Status Register [25] S25FL132K (32-Mbit) Block Protection (CMP=0) [26]
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses
Protected
Density Protected Portion
X X 0 0 0 None None None None
0 0 0 0 1 63 3F0000h – 3FFFFFh 64 kB Upper 1/64
0 0 0 1 0 62 and 63 3E0000h – 3FFFFFh 128 kB Upper 1/32
0 0 0 1 1 60 thru 63 3C0000h – 3FFFFFh 256 kB Upper 1/16
0 0 1 0 0 56 thru 63 380000h – 3FFFFFh 512 kB Upper 1/8
0 0 1 0 1 48 thru 63 300000h – 3FFFFFh 1 MB Upper 1/4
0 0 1 1 0 32 thru 63 200000h – 3FFFFFh 2 MB Upper 1/2
0 1 0 0 1 0 000000h – 00FFFFh 64 kB Lower 1/64
0 1 0 1 0 0 and 1 000000h – 01FFFFh 128 kB Lower 1/32
0 1 0 1 1 0 thru 3 000000h – 03FFFFh 256 kB Lower 1/16
0 1 1 0 0 0 thru 7 000000h – 07FFFFh 512 kB Lower 1/8
0 1 1 0 1 0 thru 15 000000h – 0FFFFFh 1 MB Lower 1/4
0 1 1 1 0 0 thru 31 000000h – 1FFFFFh 2 MB Lower 1/2
X X 1 1 1 0 thru 63 000000h – 3FFFFFh 4 MB All
1 0 0 0 1 63 3FF000h – 3FFFFFh 4 kB Upper 1/1024
1 0 0 1 0 63 3FE000h – 3FFFFFh 8 kB Upper 1/512
1 0 0 1 1 63 3FC000h – 3FFFFFh 16 kB Upper 1/256
1 0 1 0 X 63 3F8000h – 3FFFFFh 32 kB Upper 1/128
1 1 0 0 1 0 000000h – 000FFFh 4 kB Lower 1/1024
1 1 0 1 0 0 000000h – 001FFFh 8 kB Lower 1/512
1 1 0 1 1 0 000000h – 003FFFh 16 kB Lower 1/256
1 1 1 0 X 0 000000h – 007FFFh 32 kB Lower 1/128
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 55 of 90
S25FL116K/S25FL132K/S25FL164K
Notes
27. X = don’t care.
28. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
Table 21. FL132K Block Protection (CMP = 1)
Status Register [27] S25FL132K (32-Mbit) Block Protection (CMP=1) [28]
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses
Protected
Density Protected Portion
X X 0 0 0 0 thru 63 000000h – 3FFFFFh 4 MB All
0 0 0 0 1 0 thru 62 000000h – 3EFFFFh 4,032 kB Lower 63/64
0 0 0 1 0 0 and 61 000000h – 3DFFFFh 3,968 kB Lower 31/32
0 0 0 1 1 0 thru 59 000000h – 3BFFFFh 3,840 kB Lower 15/16
0 0 1 0 0 0 thru 55 000000h – 37FFFFh 3,584 kB Lower 7/8
0 0 1 0 1 0 thru 47 000000h – 2FFFFFh 3 MB Lower 3/4
0 0 1 1 0 0 thru 31 000000h – 1FFFFFh 2 MB Lower 1/2
0 1 0 0 1 1 thru 63 010000h – 3FFFFFh 4,032 kB Upper 63/64
0 1 0 1 0 2 and 63 020000h – 3FFFFFh 3,968 kB Upper 31/32
0 1 0 1 1 4 thru 63 040000h – 3FFFFFh 3,840 kB Upper 15/16
0 1 1 0 0 8 thru 63 080000h – 3FFFFFh 3,584 kB Upper 7/8
0 1 1 0 1 16 thru 63 100000h – 3FFFFFh 3 MB Upper 3/4
0 1 1 1 0 32 thru 63 200000h – 3FFFFFh 2 MB Upper 1/2
X X 1 1 1 None None None None
1 0 0 0 1 0 thru 63 000000h – 3FEFFFh 4,092 kB Lower 1023/1024
1 0 0 1 0 0 thru 63 000000h – 3FDFFFh 4,088 kB Lower 511/512
1 0 0 1 1 0 thru 63 000000h – 3FBFFFh 4,080 kB Lower 255/256
1 0 1 0 X 0 thru 63 000000h – 3F7FFFh 4,064 kB Lower 127/128
1 1 0 0 1 0 thru 63 001000h – 3FFFFFh 4,092 kB Upper 1023/1024
1 1 0 1 0 0 thru 63 002000h – 3FFFFFh 4,088 kB Upper 511/512
1 1 0 1 1 0 thru 63 004000h – 3FFFFFh 4,080 kB Upper 255/256
1 1 1 0 X 0 thru 63 008000h – 3FFFFFh 4,064 kB Upper 127/128
Table 22. FL164K Block Protection (CMP = 0)
Status Register [29] S25FL164K (64-Mbit) Block Protection (CMP=0) [30]
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses
Protected
Density Protected Portion
X X 0 0 0 None None None None
0 0 0 0 1 126 and 127 7E0000h – 7FFFFFh 128 kB Upper 1/64
0 0 0 1 0 124 thru 127 7C0000h – 7FFFFFh 256 kB Upper 1/32
0 0 0 1 1 120 thru 127 780000h – 7FFFFFh 512 kB Upper 1/16
0 0 1 0 0 112 thru 127 700000h – 7FFFFFh 1 MB Upper 1/8
0 0 1 0 1 96 thru 127 600000h – 7FFFFFh 2 MB Upper 1/4
0 0 1 1 0 64 thru 127 400000h – 7FFFFFh 4 MB Upper 1/2
0 1 0 0 1 0 and 1 000000h – 01FFFFh 128 kB Lower 1/64
0 1 0 1 0 0 thru 3 000000h – 03FFFFh 256 kB Lower 1/32
0 1 0 1 1 0 thru 7 000000h – 07FFFFh 512 kB Lower 1/16
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 56 of 90
S25FL116K/S25FL132K/S25FL164K
Notes
29. X = don’t care.
30. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
0 1 1 0 0 0 thru 15 000000h – 0FFFFFh 1 MB Lower 1/8
0 1 1 0 1 0 thru 31 000000h – 1FFFFFh 2 MB Lower 1/4
0 1 1 1 0 0 thru 63 000000h – 3FFFFFh 4 MB Lower 1/2
X X 1 1 1 0 thru 127 000000h – 7FFFFFh 8 MB ALL
1 0 0 0 1 127 7FF000h – 7FFFFFh 4 kB Upper 1/2048
1 0 0 1 0 127 7FE000h – 7FFFFFh 8 kB Upper 1/1024
1 0 0 1 1 127 7FC000h – 7FFFFFh 16 kB Upper 1/512
1 0 1 0 X 127 7F8000h – 7FFFFFh 32 kB Upper 1/256
1 1 0 0 1 0 000000h – 000FFFh 4 kB Lower1/2048
1 1 0 1 0 0 000000h – 001FFFh 8 kB Lower 1/1024
1 1 0 1 1 0 000000h – 003FFFh 16 kB Lower 1/512
1 1 1 0 X 0 000000h – 007FFFh 32 kB Lower 1/256
Table 22. FL164K Block Protection (CMP = 0) (Continued)
Status Register [29] S25FL164K (64-Mbit) Block Protection (CMP=0) [30]
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses
Protected
Density Protected Portion
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 57 of 90
S25FL116K/S25FL132K/S25FL164K
Notes
31. X = don’t care.
32. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
Table 23. FL164K Block Protection (CMP = 1)
Status Register [31] S25FL164K (64-Mbit) Block Protection (CMP=1) [32]
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses
Protected
Density Protected Portion
X X 0 0 0 0 thru 127 000000h – 7FFFFFh 8 MB ALL
0 0 0 0 1 0 thru 125 000000h – 7DFFFFh 8,064 kB Lower 63/64
0 0 0 1 0 0 thru 123 000000h – 7BFFFFh 7,936 kB Lower 31/32
0 0 0 1 1 0 thru 119 000000h – 77FFFFh 7,680 kB Lower 15/16
0 0 1 0 0 0 thru 111 000000h – 6FFFFFh 7 MB Lower 7/8
0 0 1 0 1 0 thru 95 000000h – 5FFFFFh 5 MB Lower 3/4
0 0 1 1 0 0 thru 63 000000h – 3FFFFFh 4 MB Lower 1/2
0 1 0 0 1 2 thru 127 020000h – 7FFFFFh 8,064 kB Upper 63/64
0 1 0 1 0 4 thru 127 040000h – 7FFFFFh 7,936 kB Upper 31/32
0 1 0 1 1 8 thru 127 080000h – 7FFFFFh 7,680 kB Upper 15/16
0 1 1 0 0 16 thru 127 100000h – 7FFFFFh 7 MB Upper 7/8
0 1 1 0 1 32 thru 127 200000h – 7FFFFFh 5 MB Upper 3/4
0 1 1 1 0 64 thru 127 400000h – 7FFFFFh 4 MB Upper 1/2
X X 1 1 1 None None None None
1 0 0 0 1 0 thru 127 000000h – 7FEFFFh 8,188 kB Lower 2047/2048
1 0 0 1 0 0 thru 127 000000h – 7FDFFFh 8,184 kB Lower 1023/1024
1 0 0 1 1 0 thru 127 000000h – 7FBFFFh 8,176 kB Lower 511/512
1 0 1 0 X 0 thru 127 000000h – 7F7FFFh 8,160 kB Lower 255/256
1 1 0 0 1 0 thru 127 001000h – 7FFFFFh 8,188 kB Lower 2047/2048
1 1 0 1 0 0 thru 127 002000h – 7FFFFFh 8,184 kB Lower 1023/1024
1 1 0 1 1 0 thru 127 004000h – 7FFFFFh 8,176 kB Lower 511/512
1 1 1 0 X 0 thru 127 008000h – 7FFFFFh 8,160 kB Lower 255/256
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 58 of 90
S25FL116K/S25FL132K/S25FL164K
8.5.8 Status Reg ister Protect (SRP1, SRP0)
The Status Register Protect bits (SRP1 and SRP0) are nonvolatile read / write bits in the Status Register (SR2[0] and SR1[7]). The
SRP bits control the method of write protection: software protection, hardware protection, power supply lock-down, or one time
programmable (OTP) protection.
Notes
33. When SRP1, SRP0 = (1, 0), a power-down, power-up, or Software Reset cycle will change SRP1, SRP0 to (0, 0) state.
34. The One-Time Program feature is available upon special order. Contact Cypress for details.
35. Busy, WEL, and SUS (SR1[1:0] and SR2[7]) are volatile read only status bits that are never affected by the Write Status Registers command.
36. The nonvolatile version of CMP, QE, SRP1, SRP0, SEC, TB, and BP2-BP0 (SR2[6,1,0] and SR1[6:2]) bits and the OTP LB3-LB0 bits are not writable when protected
by the SRP bits and WP# as shown in the table. The nonvolatile version of these Status Register bits are selected for writing when the Write Enable (06h) command
precedes the Write Status Registers (01h) command.
37. The volatile version of CMP, QE, SRP1, SRP0, SEC, TB, and BP2-BP0 (SR2[6,1,0] and SR1[6:2]) bits are not writable when protected by the SRP bits and WP# as
shown in the table. The volatile version of these Status Register bits are selected for writing when the Write Enable for volatile Status Register (50h) command precedes
the Write Status Registers (01h) command. There is no volatile version of the LB3-LB0 bits and these bits are not affected by a volatile Write Status Registers command.
38. The volatile SR3 bits are not protected by the SRP bits and may be written at any time by volatile (50h) Write Enable command preceding the Write Status Registers
(01h) command.
8.5.9 Erase / Program Suspend Status (SUS)
The Suspend Status bit is a read only bit in the status register (SR2[7]) that is set to 1 after executing an Erase / Program Suspend
(75h) command. The SUS status bit is cleared to 0 by Erase / Program Resume (7Ah) command as well as a power-down, power-up
cycle.
8.5.10 Security Register Lock Bits (LB3, LB2, LB1, LB0)
The Security Register Lock Bits (LB3, LB2, LB1, LB0) are nonvolatile One Time Program (OTP) bits in Status Register (SR2[5:2])
that provide the write protect control and status to the Security Registers. The default state of LB[3:1] is 0, Security Registers 1 to 3
are unlocked. LB[3:1] can be set to 1 individually using the Write Status Registers command. LB[3:1] are One Time Programmable
(OTP), once it’s set to 1, the corresponding 256-byte Security Register will become read-only permanently.
Security Register 0 is programmed with the SFDP parameters and LB0 is programmed to 1 by Cypress.
8.5.11 Quad Enable (QE)
The Quad Enable (QE) bit is a nonvolatile read / write bit in the Status Register (SR2[1]) that allows Quad SPI operation. When the
QE bit is set to a 0 state (factory default), the WP# pin and HOLD# are enabled. When the QE bit is set to a 1, the Quad IO2 and IO3
pins are enabled, and WP# and HOLD# functions are disabled.
Note: If the WP# or HOLD# pins are tied directly to the power supply or ground during standard SPI or Dual SPI operation, the QE
bit should never be set to a 1.
Status Register Protection Bits
SRP1 SRP0 WP# Status Register Description
0 0 X Software Protection WP# pin has no control. SR1 and SR2 can be written to after a Write
Enable command, WEL=1. [Factory Default]
0 1 0 Hardware Protected When WP# pin is low the SR1 and SR2 are locked and can not be
written.
0 1 1 Hardware Unprotected When WP# pin is high SR1 and SR2 are unlocked and can be written
to after a Write Enable command, WEL=1.
10X
Power Supply Lock-
Down
SR1 and SR2 are protected and can not be written to again until the
next power-down, power-up cycle. [33]
1 1 X One Time Program [34] SR1 and SR2 are permanently protected and can not be written.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 59 of 90
S25FL116K/S25FL132K/S25FL164K
8.5.12 Latency Control (LC)
Status Register-3 provides bits (SR3[3:0]) to select the number of read latency cycles used in each Fast Read command. The Read
Data command is not affected by the latency code. The binary value of this field selects from 1 to 15 latency cycles. The zero value
selects the legacy number of latency cycles used in prior generation FL-K family devices. The default is 0 cycles to provide
backward compatibility to legacy devices. The Latency Control bits may be set to select a number of read cycles optimized for the
frequency in use. If the number of latency cycles is not sufficient for the operating frequency, invalid data will be read.
Notes
39. SCK frequency > 108 MHz SIO, 108 MHz DIO, or 108 MHz QIO is not supported by this family of devices.
40. The Dual I/O and Quad I/O command protocols include Continuous Read Mode bits following the address. The clock cycles for these bits are not counted as part of
the latency cycles shown in the table. Example: the legacy Dual I/O command has four Continuous Read Mode bits following the address and no additional dummy
cycles. Therefore, the legacy Dual I/O command without additional read latency is supported only up to the frequency shown in the table for a read latency of zero
cycles. By increasing the variable read latency the frequency of the Dual I/O command can be increased to allow operation up to the maximum supported 108 MHz
DIO frequency.
8.5.13 Burst Wrap Enable (W4)
Status Register-3 provides a bit (SR3[4]) to enable a read with wrap option for the Quad I/O Read command. When SR3[4]=1, the
wrap mode is not enabled and unlimited length sequential read is performed. When SR3[4]=0, the wrap mode is enabled and a fixed
length and aligned group of 8, 16, 32, or 64 bytes will be read starting at the byte address provided by the Quad I/O Read command
and wrapping around at the group alignment boundary.
8.5.14 Burst Wrap Length (W6, W5)
Status Register-3 provides bits (SR3[1:0]) to select the alignment boundary at which reading will wrap to perform a cache line fill.
Reading begins at the initial byte address of a Fast Read Quad IO command, then sequential bytes are read until the selected
boundary is reached. Reading then wraps to the beginning of the selected boundary. This enables critical word first cache line refills.
The wrap point can be aligned on 8-, 16-, 32-, or 64-byte boundaries.
Table 24. Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
Latency Control Read Command Maximum Frequency (MHz)
Fast Read Dual Output Dual I/O Quad Output Quad I/O
0
(legacy read latency)
108
(8 dummy)
108
(8 dummy)
88
(4 mode, 0 dummy)
108
(8 dummy)
78
(2 mode, 4 dummy)
1 5050944349
2 95 85 105 56 59
3 105 95 108 70 69
4 108 105 108 83 78
5 108 108 108 94 86
6 108 108 108 105 95
7 108 108 108 108 105
8 108 108 108 108 108
9 108 108 108 108 108
10 108 108 108 108 108
11 108 108 108 108 108
12 108 108 108 108 108
13 108 108 108 108 108
14 108 108 108 108 108
15 108 108 108 108 108
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8.6 Device Identification
8.6.1 Legacy Device Identification Commands
Three legacy commands are supported to access device identification that can indicate the manufacturer, device type, and capacity
(density). The returned data bytes provide the information as shown in Table 25.
Notes
41. The ABh instruction is followed by three dummy address bytes then the output of Device ID byte. See Section 29 Command Set (ID, Security Commands) on page 65
and Section 10.5.2 Release from Deep-Power-Down / Device ID (ABh) on page 78.
42. The 90h instruction is followed by three address bytes with (Address = 0) followed by the output of Manufacturer ID byte then the Device ID byte See Section 29
Command Set (ID, Security Commands) on page 65. and Section 10.5.3 Read Manufacturer / Device ID (90h) on page 79.
43. The 9Fh instruction is followed by the output of the Manufacturer ID byte then Device ID byte then the Capacity byte. See Section 29 Command Set (ID, Security
Commands) on page 65 and Section 10.5.4 Read JEDEC ID (9Fh) on page 79.
8.6.2 Serial Flash Discove rable Parameters (SFDP)
A Read SFDP (5Ah) command to read a JEDEC standard (JESD216) defined device information structure is supported. The
information is stored in Security Register 0 and described in Section 8.4 Security Register 0 — Serial Flash Discoverable
Parameters (SFDP — JEDEC JESD216B) on page 39.
Table 25. Device Identification
Device OPN Instruction Data 1 Data 2 Data 3
S25FL116K
ABh[41] Device ID = 14h — —
90h[42] Manufacturer ID = 01h Device ID = 14h —
9Fh[43] Manufacturer ID = 01h Device Type = 40h Capacity = 15h
S25FL132K
ABh[41] Device ID = 15h — —
90h[42] Manufacturer ID = 01h Device ID = 15h —
9Fh[43] Manufacturer ID = 01h Device Type = 40h Capacity = 16h
S25FL164K
ABh[41] Device ID = 16h — —
90h[42] Manufacturer ID = 01h Device ID = 16h —
9Fh[43] Manufacturer ID = 01h Device Type = 40h Capacity = 17h
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9. Functional Description
9.1 SPI Operations
9.1.1 Standard SPI Commands
The S25FL1-K is accessed through an SPI compatible bus consisting of four signals: Serial Clock (SCK), Chip Select (CS#), Serial
Data Input (SI) and Serial Data Output (SO). Standard SPI commands use the SI input pin to serially write instructions, addresses or
data to the device on the rising edge of SCK. The SO output pin is used to read data or status from the device on the falling edge
SCK.
SPI bus operation Mode 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3 concerns the normal
state of the SCK signal when the SPI bus master is in standby and data is not being transferred to the serial flash. For Mode 0, the
SCK signal is normally low on the falling and rising edges of CS#. For Mode 3, the SCK signal is normally high on the falling and
rising edges of CS#.
9.1.2 Dual SPI Commands
The S25FL1-K supports Dual SPI operation when using the “Fast Read Dual Output (3Bh)” and “Fast Read Dual I/O (BBh)”
commands. These commands allow data to be transferred to or from the device at two to three times the rate of ordinary serial flash
devices. The Dual SPI Read commands are ideal for quickly downloading code to RAM upon power-up (code-shadowing) or for
executing non-speed-critical code directly from the SPI bus (XIP). When using Dual SPI commands, the SI and SO pins become
bidirectional I/O pins: IO0 and IO1.
9.1.3 Quad SPI Commands
The S25FL1-K supports Quad SPI operation when using the “Fast Read Quad Output (6Bh)”, and “Fast Read Quad I/O (EBh)”
commands. These commands allow data to be transferred to or from the device four to six times the rate of ordinary serial flash. The
Quad Read commands offer a significant improvement in continuous and random access transfer rates allowing fast code-
shadowing to RAM or execution directly from the SPI bus (XIP). When using Quad SPI commands the SI and SO pins become
bidirectional IO0 and IO1, and the WP# and HOLD# pins become IO2 and IO3 respectively. Quad SPI commands require the
nonvolatile or volatile Quad Enable bit (QE) in Status Register-2 to be set.
9.1.4 Hold Function
For Standard SPI and Dual SPI operations, the HOLD# (IO3) signal allows the device interface operation to be paused while it is
actively selected (when CS# is low). The Hold function may be useful in cases where the SPI data and clock signals are shared with
other devices. For example, if the page buffer is only partially written when a priority interrupt requires use of the SPI bus, the Hold
function can save the state of the interface and the data in the buffer so programming command can resume where it left off once
the bus is available again. The Hold function is only available for standard SPI and Dual SPI operation, not during Quad SPI.
To initiate a Hold condition, the device must be selected with CS# low. A Hold condition will activate on the falling edge of the
HOLD# signal if the SCK signal is already low. If the SCK is not already low the Hold condition will activate after the next falling edge
of SCK. The Hold condition will terminate on the rising edge of the HOLD# signal if the SCK signal is already low. If the SCK is not
already low the Hold condition will terminate after the next falling edge of SCK. During a Hold condition, the Serial Data Output, (SO)
or IO0 and IO1, are high impedance and Serial Data Input, (SI) or IO0 and IO1, and Serial Clock (SCK) are ignored. The Chip Select
(CS#) signal should be kept active (low) for the full duration of the Hold operation to avoid resetting the internal logic state of the
device.
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9.2 Write Protection
Applications that use nonvolatile memory must take into consideration the possibility of noise and other adverse system conditions
that may compromise data integrity. To address this concern, the S25FL1-K provides several means to protect the data from
inadvertent program or erase.
9.2.1 Write Protect Features
Device resets when VCC is below threshold
Time delay write disable after Power-Up
Write enable / disable commands and automatic write disable after erase or program
Command length protection
❐All commands that Write, Program or Erase must complete on a byte boundary (CS# driven high after a full 8 bits have been
clocked) otherwise the command will be ignored
Software and Hardware write protection using Status Register control
❐WP# input protection
❐Lock Down write protection until next power-up or Software Reset
❐One-Time Program (OTP) write protection
Write Protection using the Deep Power-Down command
Upon power-up or at power-down, the S25FL1-K will maintain a reset condition while VCC is below the threshold value of VWI, (see
Figure 18. Power-Up Timing and Voltage Levels on page 24). While reset, all operations are disabled and no commands are
recognized. During power-up and after the VCC voltage exceeds VWI, all program and erase related commands are further disabled
for a time delay of tPUW. This includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Registers commands. Note that the chip select pin (CS#) must track the VCC supply level at power-up until the VCC-min level and
tVSL time delay is reached. If needed a pull-up resistor on CS# can be used to accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write Enable Latch (WEL) set to
a 0. A Write Enable command must be issued before a Page Program, Sector Erase, Block Erase, Chip Erase or Write Status
Registers command will be accepted. After completing a program, erase or write command the Write Enable Latch (WEL) is
automatically cleared to a write-disabled state of 0.
Software controlled main flash array write protection is facilitated using the Write Status Registers command to write the Status
Register Protect (SRP0, SRP1) and Block Protect (CMP, SEC,TB, BP2, BP1 and BP0) bits.
The BP method allows a portion as small as 4-kB sector or the entire memory array to be configured as read only. Used in
conjunction with the Write Protect (WP#) pin, changes to the Status Register can be enabled or disabled under hardware control.
SeeStatus Registers on page 50. for further information.
Additionally, the Deep Power-Down (DPD) command offers an alternative means of data protection as all commands are ignored
during the DPD state, except for the Release from Deep-Power-Down (RES ABh) command. Thus, preventing any program or erase
during the DPD state.
9.3 Status Registers
The Read and Write Status Registers commands can be used to provide status and control of the flash memory device.
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10. Commands
The command set of the S25FL1-K is fully controlled through the SPI bus (see Table 26 to Table 29 on page 65). Commands are
initiated with the falling edge of Chip Select (CS#). The first byte of data clocked into the SI input provides the instruction code. Data
on the SI input is sampled on the rising edge of clock with most significant bit (MSB) first.
Commands vary in length from a single byte to several bytes. Each command begins with an instruction code and may be followed
by address bytes, a mode byte, read latency (dummy / don’t care) cycles, or data bytes. Commands are completed with the rising
edge of edge CS#. Clock relative sequence diagrams for each command are included in the command descriptions. All read
commands can be completed after any data bit. However, all commands that Write, Program or Erase must complete on a byte
boundary (CS# driven high after a full 8 bits have been clocked) otherwise the command will be ignored. This feature further protects
the device from inadvertent writes. Additionally, while the memory is being programmed or erased, all commands except for Read
Status Register and Suspend commands will be ignored until the program or erase cycle has completed. When the Status Register
is being written, all commands except for Read Status Register will be ignored until the Status Register write operation has
completed.
Notes
44. Data bytes are shifted with Most Significant Bit First. Byte fields with data in brackets ‘[]’ indicate data being read from the device on the SO pin.
45. Status Register contents will repeat continuously until CS# terminates the command.
46. Set Burst with Wrap Input format to load SR3. See Table 17 on page 51.
IO0 = x, x, x, x, x, x, W4, x]
IO1 = x, x, x, x, x, x, W5, x]
IO2 = x, x, x, x, x, x, W6 x]
IO3 = x, x, x, x, x, x, x,x
47. When changing the value of any single bit, read all other bits and rewrite the same value to them.
Table 26. Command Set (Configuration, Status, Erase, Program Commands [44])
Command Name
BYTE 1
(Instruction) BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
Read Status Register-1 05h SR1[7:0] [45] [47]
Read Status Register-2 35h SR2[7:0] [45] [47]
Read Status Register-3 33h SR3[7:0] [45]
Write Enable 06h
Write Enable for Volatile Status
Register 50h
Write Disable 04h
Write Status Registers 01h SR1[7:0] SR2[7:0] SR3[7:0]
Set Burst with Wrap 77h xxh xxh xxh SR3[7:0] [46]
Set Block / Pointer Protection
(S25FL132K / S25FL164K) 39h A23–A16 A15–A10, x, x xxh
Page Program 02h A23–A16 A15–A8 A7–A0 D7–D0
Sector Erase (4 kB) 20h A23–A16 A15–A8 A7–A0
Block Erase (64 kB) D8h A23–A16 A15–A8 A7–A0
Chip Erase C7h / 60h
Erase / Program Suspend 75h
Erase / Program Resume 7Ah
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Notes
48. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
49. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
50. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
51. Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
52. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0, …..)
IO1 = (x, x, x, x, D5, D1, …..)
IO2 = (x, x, x, x, D6, D2, …..)
IO3 = (x, x, x, x, D7, D3, …..)
53. This command is recommended when using the Dual or Quad “Continuous Read Mode” feature. See Section 10.4.3 a nd Section 10.4.3 on page 76 for more information.
Note
54. This command is recommended when using the Dual or Quad “Continuous Read Mode” feature. See Section 10.4.3 a nd Section 10.4.3 on page 76 for more information.
Table 27. Command Set (Read Commands)
Command Name
BYTE 1
(Instruction) BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
Read Data 03h A23–A16 A15–A8 A7–A0 (D7–D0, …)
Fast Read 0Bh A23–A16 A15–A8 A7–A0 dummy (D7–D0, …)
Fast Read Dual Output 3Bh A23–A16 A15–A8 A7–A0 dummy (D7–D0, …) [48]
Fast Read Quad Output 6Bh A23–A16 A15–A8 A7–A0 dummy (D7–D0, …) [50]
Fast Read Dual I/O BBh A23–A8 [49] A7–A0, M7–
M0 [49] (D7–D0, …) [48]
Fast Read Quad I/O EBh A23–A0,
M7–M0 [51] (x,x,x,x,
D7–D0, …) [52] (D7–D0, …) [50]
Continuous Read Mode
Reset [53] FFh FFh
Table 28. Command Set (Reset Commands)
Command Name
Byte 1
(Instruction) Byte 2 Byte 3 Byte 4 Byte 5 Byte 6
Software Reset Enable 66h
Software Reset 99h
Continuous Read Mode Reset [54] FFh FFh
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Notes
55. The Device ID will repeat continuously until CS# terminates the command.
56. See Section 8.6.1 Legacy Device Identification Commands on page 60 for Device ID information. The 90h instruction is followed by an address. Address = 0 selects
Manufacturer ID as the first returned data as shown in the table. Address = 1 selects Device ID as the first returned data followed by Manufacturer ID.
57. Security Register Address:
Security Register 0: A23-16 = 00h; A15-8 = 00h; A7-0 = byte address
Security Register 1: A23-16 = 00h; A15-8 = 10h; A7-0 = byte address
Security Register 2: A23-16 = 00h; A15-8 = 20h; A7-0 = byte address
Security Register 3: A23-16 = 00h; A15-8 = 30h; A7-0 = byte address
Security Register 0 is used to store the SFDP parameters and is always programmed and locked by Cypress.
10.1 Configuration and Status Commands
10.1.1 Read Status Registers (05h), (35h), (33h)
The Read Status Register commands allow the 8-bit Status Registers to be read. The command is entered by driving CS# low and
shifting the instruction code “05h” for Status Register-1, “35h” for Status Register-2, or 33h for Status Register-3, into the SI pin on
the rising edge of SCK. The Status Register bits are then shifted out on the SO pin at the falling edge of SCK with most significant bit
(MSB) first as shown in Figure 30. The Status Register bits are shown in Section 8.5 Status Registers on page 50.
The Read Status Register-1 (05h) command may be used at any time, even while a Program, Erase, or Write Status Registers cycle
is in progress. This allows the BUSY status bit to be checked to determine when the operation is complete and if the device can
accept another command. The Read Status Register-2 (35h), and Read Status Registers (33h) may be used only when the device
is in standby, not busy with an embedded operation.
Status Registers can be read continuously as each repeated data output delivers the updated current value of each status register.
Example: using the instruction code “05h” for Read Status Register-1, the first output of eight bits may show the device is busy,
SR1[0]=1. By continuing to hold CS# low, the updated value of SR1 will be shown in the next byte output. This repeated reading of
SR1can continue until the system detects the Busy bit has changed back to ready status in one of the status bytes being read out.
The Read Status Register commands are completed by driving CS# high.
Figure 30. Read Status Register Command Sequence Diagram for 05h and 35h
Table 29. Command Set (ID, Security Commands)
Command Name
BYTE 1
(Instruction) BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
Deep Power-down B9h
Release Power down / Device
ID ABh dummy dummy dummy Device ID [55]
Manufacturer / Device ID [56] 90h A23–A16 A15–A8 A7–A0 Manufacturer Device ID
JEDEC ID 9Fh Manufacturer Memory Type Capacity
Read SFDP Register /
Read Unique ID Number 5Ah 00h 00h A7–A0 dummy (D7–D0, …)
Read Security Registers [57] 48h A23–A16 A15–A8 A7–A0 dummy (D7–D0, …)
Erase Security Registers [57] 44h A23–A16 A15–A8 A7–A0
Program Security Registers
[57] 42h A23–A16 A15–A8 A7–A0 D7–D0, …
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Status Updated Status
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Figure 31. Read Status Register-3 Command Sequence Diagram for 33h — S25FL132K / S25FL164K
10.1.2 Write Enable (06h)
The Write Enable command (Figure 32) sets the Write Enable Latch (WEL) bit in the Status Register to a 1. The WEL bit must be set
prior to every Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Registers and Erase / Program Security
Registers command. The Write Enable command is entered by driving CS# low, shifting the instruction code “06h” into the Data
Input (SI) pin on the rising edge of SCK, and then driving CS# high.
Figure 32. Write Enable (WREN 06h) Command Sequence
10.1.3 Write Enable for Volatile Status Register (50h)
The nonvolatile Status Register bits described in Section 8.5 Status Registers on page 50 can also be written to as volatile bits.
During power up reset, the nonvolatile Status Register bits are copied to a volatile version of the Status Register that is used during
device operation. This gives more flexibility to change the system configuration and memory protection schemes quickly without
waiting for the typical nonvolatile bit write cycles or affecting the endurance of the Status Register nonvolatile bits. To write the
volatile version of the Status Register bits, the Write Enable for Volatile Status Register (50h) command must be issued and
immediately followed by the Write Status Registers (01h) command. Write Enable for Volatile Status Register command (Figure 33)
will not set the Write Enable Latch (WEL) bit, it is only valid for the next following Write Status Registers command, to change the
volatile Status Register bit values.
Figure 33. Write Enable for Volatile Status Register Command Sequence
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 23 22 21 20 11 10 9 8
Instruction Status Pointer Address
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
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10.1.4 Write Disable (04h)
The Write Disable command resets the Write Enable Latch (WEL) bit in the Status Register to a 0. The Write Disable command is
entered by driving CS# low, shifting the instruction code “04h” into the SI pin and then driving CS# high. Note that the WEL bit is
automatically reset after Power-up and upon completion of the Write Status Registers, Erase / Program Security Registers, Page
Program, Sector Erase, Block Erase and Chip Erase commands.
Figure 34. Write Disable (WRDI 04h) Command Sequence
10.1.5 Write Status Registers (01h)
The Write Status Registers command allows the Status Registers to be written. Only nonvolatile Status Register bits SRP0, SEC,
TB, BP2, BP1, BP0 (SR1[7:2]) CMP, LB3, LB2, LB1, QE, SRP1 (SR2[6:0]), and the volatile bits SR3[6:0] can be written. All other
Status Register bit locations are read-only and will not be affected by the Write Status Registers command. LB3-0 are nonvolatile
OTP bits; once each is set to 1, it can not be cleared to 0. The Status Register bits are shown in Section 8.5 Status Registers on
page 50. Any reserved bits should only be written to their default value.
To write nonvolatile Status Register bits, a standard Write Enable (06h) command must previously have been executed for the
device to accept the Write Status Registers Command (Status Register bit WEL must equal 1). Once write enabled, the command is
entered by driving CS# low, sending the instruction code “01h”, and then writing the Status Register data bytes as illustrated in
Figure 35.
To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) command must have been executed prior to
the Write Status Registers command (Status Register bit WEL remains 0). However, SRP1 and LB3, LB2, LB1, LB0 can not be
changed because of the OTP protection for these bits. Upon power-off, the volatile Status Register bit values will be lost, and the
nonvolatile Status Register bit values will be restored when power on again.
To complete the Write Status Registers command, the CS# pin must be driven high after the eighth bit of a data value is clocked in
(CS# must be driven high on an 8-bit boundary). If this is not done the Write Status Registers command will not be executed. If CS#
is driven high after the eighth clock the CMP and QE bits will be cleared to 0 if the SRP1 bit is 0. The SR2 bits are unaffected if SRP1
is 1. If CS# is driven high after the eighth or sixteenth clock, the SR3 bits will not be affected.
During nonvolatile Status Register write operation (06h combined with 01h), after CS# is driven high at the end of the Write Status
Registers command, the self-timed Write Status Registers operation will commence for a time duration of tW (see Section 5.8 AC
Electrical Characteristics on page 25). While the Write Status Registers operation is in progress, the Read Status Register command
may still be accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Registers operation and a 0
when the operation is finished and ready to accept other commands again. After the Write Status Registers operation has finished,
the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
During volatile Status Register write operation (50h combined with 01h), after CS# is driven high at the end of the Write Status
Registers command, the Status Register bits will be updated to the new values within the time period of tSHSL2 (see Section 5.8 AC
Electrical Characteristics on page 25). BUSY bit will remain 0 during the Status Register bit refresh period. Refer to Section 8.5
Status Registers on page 50 for detailed Status Register bit descriptions.
Figure 35. Write Status Registers Command Sequence Diagram
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Status Register-1 Input Status Register-2 Input Status Register-3
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10.2 Program and Erase Commands
10.2.1 Page Program (02h)
The Page Program command allows from one byte to 256 bytes (a page) of data to be programmed at previously erased (FFh)
memory locations. A Write Enable command must be executed before the device will accept the Page Program Command (Status
Register bit WEL= 1). The command is initiated by driving the CS# pin low then shifting the instruction code “02h” followed by a 24-
bit address (A23-A0) and at least one data byte, into the SI pin. The CS# pin must be held low for the entire length of the command
while data is being sent to the device. The Page Program command sequence is shown in Figure 36. Page Program Command
Sequence on page 68.
If an entire 256-byte page is to be programmed, the last address byte (the 8 least significant address bits) should be set to 0. If the
last address byte is not zero, and the number of clocks exceed the remaining page length, the addressing will wrap to the beginning
of the page. In some cases, less than 256 bytes (a partial page) can be programmed without having any effect on other bytes within
the same page. One condition to perform a partial page program is that the number of clocks can not exceed the remaining page
length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the page and overwrite previously
sent data.
As with the write and erase commands, the CS# pin must be driven high after the eighth bit of the last byte has been latched. If this
is not done the Page Program command will not be executed. After CS# is driven high, the self-timed Page Program command will
commence for a time duration of tPP (Section 5.8 AC Electrical Characteristics on page 25). While the Page Program cycle is in
progress, the Read Status Register command may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1
during the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other commands
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Page
Program command will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and
BP0) bits.
Figure 36. Page Program Command Sequence
10.2.2 Sector Erase (20h)
The Sector Erase command sets all memory within a specified sector (4 kbytes) to the erased state of all 1’s (FFh). A Write Enable
command must be executed before the device will accept the Sector Erase command (Status Register bit WEL must equal 1). The
command is initiated by driving the CS# pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0)
SeeSupply and Signal Ground (VSS) on page 10. The Sector Erase command sequence is shown in Figure 37 on page 69.
The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Sector Erase command
will not be executed. After CS# is driven high, the self-timed Sector Erase command will commence for a time duration of tSE.
Section 5.8 AC Electrical Characteristics on page 25 While the Sector Erase cycle is in progress, the Read Status Register
command may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and
becomes a 0 when the cycle is finished and the device is ready to accept other commands again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase command will not be executed if
the addressed sector is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (Table 20, FL132K Block
Protection (CMP = 0) on page 54).
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 23 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Input Data 1Input Data 2
Not Recommended for New Design
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Figure 37. Sector Erase Command Sequence
10.2.3 64-kB Block Erase (D8h)
The Block Erase command sets all memory within a specified block (64 kbytes) to the erased state of all 1s (FFh). A Write Enable
command must be executed before the device will accept the Block Erase command (Status Register bit WEL must equal 1). The
command is initiated by driving the CS# pin low and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0)
SeeSupply and Signal Ground (VSS) on page 10. The Block Erase command sequence is shown in Figure 38.
The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Block Erase command
will not be executed. After CS# is driven high, the self-timed Block Erase command will commence for a time duration of tBE (see
Section 5.8 AC Electrical Characteristics on page 25). While the Block Erase cycle is in progress, the Read Status Register
command may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and
becomes a 0 when the cycle is finished and the device is ready to accept other commands again. After the Block Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase command will not be executed if the
addressed sector is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Section 8.5 Status Registers on
page 50).
Figure 38. 64-kB Block Erase Command Sequence
10.2.4 Chip Erase (C7h / 60h)
The Chip Erase command sets all memory within the device to the erased state of all 1’s (FFh). A Write Enable command must be
executed before the device will accept the Chip Erase command (Status Register bit WEL must equal 1). The command is initiated
by driving the CS# pin low and shifting the instruction code “C7h” or “60h”. The Chip Erase command sequence is shown in
Figure 39.
The CS# pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase command will not be
executed. After CS# is driven high, the self-timed Chip Erase command will commence for a time duration of tCE (Section 5.8 AC
Electrical Characteristics on page 25). While the Chip Erase cycle is in progress, the Read Status Register command may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and
the device is ready to accept other commands again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Chip Erase command will not be executed if any page is protected by the Block Protect (CMP,
SEC, TB, BP2, BP1, and BP0) bits (see Section 8.5 Status Registers on page 50).
Figure 39. Chip Erase Command Sequence
CS#
SCK
SI
SO
Phase
7654321023 10
Instruction Address
CS#
SCK
SI
SO
Phase
76543 21023 1 0
Instruction Address
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
Not Recommended for New Design
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10.2.5 Erase / Program Suspend (75h)
The Erase / Program Suspend command allows the system to interrupt a Sector or Block Erase operation, then read from or
program data to any other sector. The Erase / Program Suspend command also allows the system to interrupt a Page Program
operation and then read from any other page or erase any other sector or block. The Erase / Program Suspend command sequence
is shown in Figure 40. Erase / Program Suspend Command Sequence on page 71.
The Write Status Registers command (01h), Program Security Registers (42h), and Erase commands (20h, D8h, C7h, 60h, 44h) are
not allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If written during the Chip
Erase operation, the Erase Suspend command is ignored. The Write Status Registers command (01h), Erase Security Registers
(44h), and Program commands (02h, 32h, 42h) are not allowed during Program Suspend. Program Suspend is valid only during the
Page Program operation.
The Erase / Program Suspend command 75h will be accepted by the device only if the SUS bit in the Status Register equals to 0
and the BUSY bit equals to 1 while a Sector or Block Erase or a Page Program operation is on-going. If the SUS bit equals to 1 or
the BUSY bit equals to 0, the Suspend command will be ignored by the device. Program or Erase command for the sector that is
being suspended will be ignored.
A maximum of time of tSUS (Section 5.8 AC Electrical Characteristics on page 25) is required to suspend the erase or program
operation. The BUSY bit in the Status Register will be cleared from 1 to 0 within tSUS and the SUS bit in the Status Register will be
set from 0 to 1 immediately after Erase / Program Suspend. For a previously resumed Erase / Program operation, it is also required
that the Suspend command 75h is not issued earlier than a minimum of time of tSUS following the preceding Resume command 7Ah.
Unexpected power off during the Erase / Program suspend state will reset the device and release the suspend state. SUS bit in the
Status Register will also reset to 0. The data within the page, sector or block that was being suspended may become corrupted. It is
recommended for the user to implement system design techniques to prevent accidental power interruption, provide nonvolatile
tracking of in process program or erase commands, and preserve data integrity by evaluating the nonvolatile program or erase
tracking information during each system power up in order to identify and repair (re-erase and re-program) any improperly
terminated program or erase operations.
Table 30. Commands Accepted During Suspend
Operation Suspended Command Allowed Instruction
Program or Erase Read Data 03h
Program or Erase Fast Read 0Bh
Program or Erase Fast Read Dual Output 3Bh
Program or Erase Fast Read Quad Output 6Bh
Program or Erase Fast Read Dual I/O BBh
Program or Erase Fast Read Quad I/O EBh
Program or Erase Continuous Read Mode Reset FFh
Program or Erase Read Status Register-1 05h
Program or Erase Read Status Register-2 35h
Program or Erase Write Enable 06h
Erase Page Program 02h
Program Sector Erase 20h
Program Block Erase D8h
Program or Erase Erase / Program Resume 7Ah
Not Recommended for New Design
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Figure 40. Erase / Program Suspend Command Sequence
10.2.6 Erase / Program Resume (7Ah)
The Erase / Program Resume command “7Ah” must be written to resume the Sector or Block Erase operation or the Page Program
operation after an Erase / Program Suspend. The Resume command “7Ah” will be accepted by the device only if the SUS bit in the
Status Register equals to 1 and the BUSY bit equals to 0. After the Resume command is issued the SUS bit will be cleared from 1 to
0 immediately, the BUSY bit will be set from 0 to 1 within 200 ns and the Sector or Block will complete the erase operation or the
page will complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume command “7Ah” will be
ignored by the device. The Erase / Program Resume command sequence is shown in Figure 41.
It is required that a subsequent Erase / Program Suspend command not to be issued within a minimum of time of “tSUS” following a
Resume command.
Figure 41. Erase / Program Resume Command Sequence
10.3 Read Commands
10.3.1 R ea d Da ta (03 h)
The Read Data command allows one or more data bytes to be sequentially read from the memory. The command is initiated by
driving the CS# pin low and then shifting the instruction code “03h” followed by a 24-bit address (A23-A0) into the SI pin. The code
and address bits are latched on the rising edge of the SCK pin. After the address is received, the data byte of the addressed memory
location will be shifted out on the SO pin at the falling edge of SCK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after each byte of data is shifted out allowing for a continuous stream of data. This means
that the entire memory can be accessed with a single command as long as the clock continues. The command is completed by
driving CS# high.
The Read Data command sequence is shown in Figure 42. If a Read Data command is issued while an Erase, Program or Write
cycle is in process (BUSY=1) the command is ignored and will not have any effects on the current cycle. The Read Data command
allows clock rates from DC to a maximum of fR (see Section 5.8 AC Electrical Characteristics on page 25).
Figure 42. Read Data Command Sequence
CS#
SCK
SI
SO
Phase
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0
Suspend Instruction Read Status Instruction Status Instr. During Suspend
Repeat Status Read Until Suspended
t
SUS
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 23 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Data 1 Data 2
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 72 of 90
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10.3.2 Fast Read (0Bh)
The Fast Read command is similar to the Read Data command except that it can operate at higher frequency than the traditional
Read Data command. This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 43. The
dummy clocks allow the devices internal circuits additional time for setting up the initial address. During the dummy clocks the data
value on the SI pin is a “don’t care.”
When variable read latency is enabled, the number of dummy cycles is set by the Latency Control value in SR3 to optimize the
latency for the frequency in use. See. Table 24, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
on page 59.
Figure 43. Fast Read Command Sequence
10.3.3 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) command is similar to the standard Fast Read (0Bh) command except that data is output on two
pins; IO0 and IO1. This allows data to be transferred from the S25FL1-K at twice the rate of standard SPI devices. The Fast Read
Dual Output command is ideal for quickly downloading code from flash to RAM upon power-up or for applications that cache code-
segments to RAM for execution.
Similar to the Fast Read command, the Fast Read Dual Output command can operate at higher frequency than the traditional Read
Data command. This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 44. The dummy
clocks allow the device's internal circuits additional time for setting up the initial address. The input data during the dummy clocks is
“don’t care.” However, the IO0 pin should be high-impedance prior to the falling edge of the first data out clock.
When variable read latency is enabled, the number of dummy cycles is set by the Latency Control value in SR3 to optimize the
latency for the frequency in use. See. Table 24, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
on page 59.
Figure 44. Fast Read Dual Output Command Sequence
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 23 1 0
7 6 5 4 3 2 1 0
Instruction Address Dummy Cycles Data 1
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 23 22 21 0 6 4 2 0 6 4 2 0
7 5 3 1 7 5 3 1
Instruction Address Dummy Data 1 Data 2
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 73 of 90
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10.3.4 Fast Read Quad Output (6Bh)
The Fast Read Quad Output (6Bh) command is similar to the Fast Read Dual Output (3Bh) command except that data is output on
four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must be executed before the device will accept the Fast Read
Quad Output Command (Status Register bit QE must equal 1). The Fast Read Quad Output Command allows data to be transferred
from the S25FL1-K at four times the rate of standard SPI devices.
The Fast Read Quad Output command can operate at higher frequency than the traditional Read Data command. This is
accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 45. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks is “don’t care.” However, the
IO pins should be high-impedance prior to the falling edge of the first data out clock.
When variable read latency is enabled, the number of dummy cycles is set by the Latency Control value in SR3 to optimize the
latency for the frequency in use. See. Table 24, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
on page 59.
Figure 45. Fast Read Quad Output Command Sequence
10.3.5 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) command allows for improved random access while maintaining two IO pins, IO0 and IO1. It is similar
to the Fast Read Dual Output (3Bh) command but with the capability to input the Address bits (A23-0) two bits per clock. This
reduced command overhead may allow for code execution (XIP) directly from the Dual SPI in some applications.
Fast Read Dual I/O with “Continuous Read Mode”
The Fast Read Dual I/O command can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0)
after the input Address bits (A23-0), as shown in Figure 46. The upper nibble of the (M7-4) controls the length of the next Fast Read
Dual I/O command through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t
care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O command (after CS# is raised and then lowered)
does not require the BBh instruction code, as shown in Figure 47. This reduces the command sequence by eight clocks and allows
the Read address to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to
(1,0), the next command (after CS# is raised and then lowered) requires the first byte instruction code, thus returning to normal
operation. A “Continuous Read Mode” Reset command can also be used to reset (M7-0) before issuing normal commands (see
SeeContinuous Read Mode Reset (FFh or FFFFh) on page 76.).
When variable read latency is enabled, the number of latency (Mode + Dummy) cycles is set by the Latency Control value in SR3 to
optimize the latency for the frequency in use. See Table 24, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to
3.6V on page 59. Note that the legacy Read Dual I/O command has four Mode cycles and no Dummy cycles for a total of four
latency cycles, Enabling the variable read latency allows for the addition of more read latency to enable higher frequency operation
of the Dual I/O command.
Figure 46. Fast Read Dual I/O Command Sequence (Initial command or previous M5-4 10)
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7 6 5 4 3 2 1 0 23 1 0 4 0 4 0 4 0 4 0 4 0 4
5 1 5 1 5 1 5 1 5 1 5
6 2 6 2 6 2 6 2 6 2 6
7 3 7 3 7 3 7 3 7 3 7
Instruction Address Dummy D1 D2 D3 D4 D5
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 22 2 0 6 4 2 0 6 4 2 0 6 4 2 0
23 3 1 7 5 3 1 7 5 3 1 7 5 3 1
Instruction Address Mode Dummy Data 1 Data 2
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 74 of 90
S25FL116K/S25FL132K/S25FL164K
Note
58. Least significant 4 bits of Mode are don’t care and it is optional for the host to drive these bits. The host may turn off drive during these cycles to increase bus turn
around time between Mode bits from host and returning data from the memory.
Figure 47. Fast Read Dual I/O Command Sequence (Previous command set M5-4 = 10)
10.3.6 Fast Read Quad I/O (EBh)
The Fast Read Quad I/O (EBh) command is similar to the Fast Read Dual I/O (BBh) command except that address and data bits are
input and output through four pins IO0, IO1, IO2 and IO3 and four Dummy clock are required prior to the data output. The Quad I/O
dramatically reduces instruction overhead allowing faster random access for code execution (XIP) directly from the Quad SPI. The
Quad Enable bit (QE) of Status Register-2 must be set to enable the Fast Read Quad I/O Command.
Fast Read Quad I/O with “Continuous Read Mode”
The Fast Read Quad I/O command can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0)
after the input Address bits (A23-0), as shown in Figure 48. Fast Read Quad I/O Command Sequence (Initial command or previous
M5-4 10) on page 74. The upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O command through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the IO pins
should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O command (after CS# is raised and then lowered)
does not require the EBh instruction code, as shown in Figure 49. Fast Read Quad I/O Command Sequence (Previous command
set M5-4 = 10) on page 75. This reduces the command sequence by eight clocks and allows the Read address to be immediately
entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next command (after CS# is
raised and then lowered) requires the first byte instruction code, thus returning to normal operation. A “Continuous Read Mode”
Reset command can also be used to reset (M7-0) before issuing normal commands (see Section 10.4.3 Continuous Read Mode
Reset (FFh or FFFFh) on page 76).
When variable read latency is enabled, the number of latency (Mode + Dummy) cycles is set by the Latency Control value in SR3 to
optimize the latency for the frequency in use. See. Table 24, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to
3.6V on page 59. Note that the legacy Read Quad I/O command has two Mode cycles plus four Dummy cycles for a total of six
latency cycles, Enabling the variable read latency allows for the addition of more read latency to enable higher frequency operation
of the Quad I/O command.
Figure 48. Fast Read Quad I/O Command Sequence (Initial command or previous M5-4 10)
Note
59. Least significant 4 bits of Mode are don’t care and it is optional for the host to drive these bits. The host may turn off drive during these cycles to increase bus turn
around time between Mode bits from host and returning data from the memory.
CS#
SCK
IO0
IO1
Phase
6 4 2 0 22 2 0 6 4 2 0 6 4 2 0 6 4 2 0
7 5 3 1 23 3 1 7 5 3 1 7 5 3 1 7 5 3 1
Data N Address Mode Dummy Data 1 Data 2
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7654321020 4040 40404040
21 5151 51515151
22 6262 62626262
23 7373 73737373
Instruction Address Mode Dummy D1 D2 D3 D4
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 75 of 90
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Figure 49. Fast Read Quad I/O Command Sequence (Previous command set M5-4 = 10)
Fast Read Quad I/O with “16 / 32 / 64-Byte Wrap Around”
The Fast Read Quad I/O command can also be used to access a specific portion within a page by issuing a “Set Burst with Wrap”
command prior to EBh. The “Set Burst with Wrap” command can either enable or disable the “Wrap Around” feature for the following
EBh commands. When “Wrap Around” is enabled, the data being accessed can be limited to either a 16 / 32 / 64-byte section of
data. The output data starts at the initial address specified in the command, once it reaches the ending boundary of the 16 / 32 / 64-
byte section, the output will wrap around to the beginning boundary automatically until CS# is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards
within a fixed length (16 / 32 / 64-bytes) of data without issuing multiple read commands.
The “Set Burst with Wrap” command allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to enable or disable the “Wrap
Around” operation while W6-5 are used to specify the length of the wrap around section within a page. See Section 10.3.7 Set Burst
with Wrap (77h) on page 75.
10.3.7 Set Burst with Wrap (77h)
The Set Burst with Wrap (77h) command is used in conjunction with “Fast Read Quad I/O” commands to access a fixed length and
alignment of 8 / 16 / 32 / 64-bytes of data. Certain applications can benefit from this feature and improve the overall system code
execution performance. This command loads the SR3 bits.
Similar to a Quad I/O command, the Set Burst with Wrap command is initiated by driving the CS# pin low and then shifting the
instruction code “77h” followed by 24-dummy bits and 8 “Wrap Bits”, W7-0. The command sequence is shown in Figure 50. Set
Burst with Wrap Command Sequence on page 75. Wrap bit W7 and the lower nibble W3-0 are not used. See Status Register-3
(SR3[6:4]) for the encoding of W6-W4 in Section 8.5 Status Registers on page 50.
Once W6-4 is set by a Set Burst with Wrap command, all the following “Fast Read Quad I/O” commands will use the W6-4 setting to
access the 8 / 16 / 32 / 64-byte section of data. Note, Status Register-2 QE bit (SR2[1]) must be set to 1 in order to use the Fast
Read Quad I/O and Set Burst with Wrap commands. To exit the “Wrap Around” function and return to normal read operation,
another Set Burst with Wrap command should be issued to set W4 = 1. The default value of W4 upon power on is 1. In the case of a
system Reset while W4 = 0, it is recommended that the controller issues a Software Reset command or a Set Burst with Wrap
command to reset W4 = 1 prior to any normal Read commands since S25FL1-K does not have a hardware Reset Pin.
Figure 50. Set Burst with Wrap Command Sequence
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 4 0 20 4 0 4 0 4 0 4 0 6 4 2 0
5 1 5 1 21 5 1 5 1 5 1 5 1 7 5 3 1
6 2 6 2 22 6 2 6 2 6 2 6 1 7 5 3 1
7 3 7 3 23 7 3 7 3 7 3 7 1 7 5 3 1
DN-1 DN Address Mode Dummy D1 D2 D3 D4
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7 6 5 4 3 2 1 0 .X .X .X .X .X .X W4 .X
.X .X .X .X .X .X W5 .X
.X .X .X .X .X .X W6 .X
.X .X .X .X .X .X .X .X
Instruction Don’t Care Wrap
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 76 of 90
S25FL116K/S25FL132K/S25FL164K
10.4 Reset Commands
Software controlled Reset commands restore the device to its initial power up state, by reloading volatile registers from nonvolatile
default values. If a software reset is initiated during a Erase, Program or writing of a Register operation the data in that Sector, Page
or Register is not stable, the operation that was interrupted needs to be initiated again.
When the device is in Deep Power-Down mode it is protected from a software reset, the software reset commands are ignored and
have no effect. To reset the device send the Release Power down command (ABh) and after time duration of tRES1 the device will
resume normal operation and the Software reset commands will be accepted.
A software reset is initiated by the Software Reset Enable command (66h) followed by Software Reset command (99h) and then
executed when CS# is brought high after tRCH time at the end of the Software Reset instruction and requires tRST time before
executing the next Instruction after the Software Reset. See Figure 26. Software Reset Input Timing on page 28
Note: The tRCH is a Cypress specific parameter and CS# must be brought high after tRCH time, if not the Software Reset will not be
executed.
Figure 51. Software Reset Command Sequence
10.4.1 Software Reset Enable (66h)
The Reset Enable (66h) command is required immediately before a software reset command (99h) such that a software reset is a
sequence of the two commands. Any command other than Reset (99h) following the Reset Enable (66h) command, will clear the
reset enable condition and prevent a later RST command from being recognized.
10.4.2 Software Reset (99h)
The Reset (99h) command immediately following a Reset Enable (66h) command, initiates the software reset process. Any
command other than Reset (99h) following the Reset Enable (66h) command, will clear the reset enable condition and prevent a
later Reset (99h) command from being recognized.
10.4.3 Continuous Read Mode Reset (FFh or FFFFh)
The “Continuous Read Mode” bits are used in conjunction with “Fast Read Dual I/O” and “Fast Read
Quad I/O” commands to provide the highest random Flash memory access rate with minimum SPI instruction overhead, thus
allowing more efficient XIP (execute in place) with this device family. A device that is in a continuous high performance read mode
may not recognize any normal SPI command or the software reset command may not be recognized by the device. It is
recommended to use the Continuous Read Mode Reset command after a system Power on Reset or, before sending a software
reset, to ensure the device is released from continuous high performance read mode.
The “Continuous Read Mode” bits M7-0 are set by the Dual/Quad I/O Read commands. M5-4 are used to control whether the 8-bit
SPI instruction code (BBh or EBh) is needed or not for the next command. When M5-4 = (1,0), the next command will be treated the
same as the current Dual/Quad I/O Read command without needing the 8-bit instruction code; when M5-4 do not equal to (1,0), the
device returns to normal SPI command mode, in which all commands can be accepted. M7-6 and M3-0 are reserved bits for future
use, either 0 or 1 values can be used.
The Continuous Read Mode Reset command (FFh or FFFFh) can be used to set M4 = 1, thus the device will release the Continuous
Read Mode and return to normal SPI operation, as shown in Figure 52.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 77 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 52. Continuous Read Mode Reset for Fast Read Dual or Quad I/O
Notes
60. To reset “Continuous Read Mode” during Quad I/O operation, only eight clocks are needed. The instruction is “FFh”.
61. To reset “Continuous Read Mode” during Dual I/O operation, sixteen clocks are needed to shift in instruction “FFFFh”.
10.4.4 Host System Reset Commands
Since S25FL1-K does not have a hardware Reset pin, if the host system memory controller resets, without a complete power-down
and power-up sequence, while an S25FL1-K device is set to Continuous Mode Read, the S25FL1-K device will not recognize any
initial standard SPI commands from the controller. To address this possibility, it is recommended to issue a Continuous Read Mode
Reset (FFFFh) command as the first command after a system Reset. Doing so will release the device from the Continuous Read
Mode and allow Standard SPI commands to be recognized. See Section 10.4.3 Continuous Read Mode Reset (FFh or FFFFh) on
page 76.
If Burst Wrap Mode is used, it is also recommended to issue a Set Burst with Wrap (77h) command that sets the W4 bit to one as the
second command after a system Reset. Doing so will release the device from the Burst Wrap Mode and allow standard sequential
read SPI command operation. See Section 10.3.7 Set Burst with Wrap (77h) on page 75.
Issuing these commands immediately after a non-power-cycle (warm) system reset, ensures the device operation is consistent with
the power-on default device operation. The same commands may also be issued after device power-on (cold) reset so that system
reset code is the same for warm or cold reset.
CS#
SCK
IO0
IO1
IO2
IO3
DIO_Phase
QIO_Phase
FFFFh
Optional FFh
Mode Bit Reset for Quad I/O Optional FFh
Not Recommended for New Design
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S25FL116K/S25FL132K/S25FL164K
10.5 ID and Security Commands
10.5.1 D ee p- Powe r-Down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further reduced with the Deep-Power-
Down command. The lower power consumption makes the Deep-Power-Down (DPD) command especially useful for battery
powered applications (see ICC1 and ICC2 in Section 5.8 AC Electrical Characteristics on page 25). The command is initiated by
driving the CS# pin low and shifting the instruction code “B9h” as shown in Figure 53.
The CS# pin must be driven high after the eighth bit has been latched. If this is not done the Deep-Power-Down command will not be
executed. After CS# is driven high, the power-down state will entered within the time duration of tDP (Section 5.8 AC Electrical
Characteristics on page 25). While in the power-down state only the Release from Deep-Power-Down / Device ID command, which
restores the device to normal operation, will be recognized. All other commands are ignored. This includes the Read Status Register
command, which is always available during normal operation. Ignoring all but one command also makes the Power Down state a
useful condition for securing maximum write protection. The device always powers-up in the normal operation with the standby
current of ICC1.
Figure 53. Deep Power-Down Command Sequence
10.5.2 Release from Deep-Power-Down / Device ID (ABh)
The Release from Deep-Power-Down / Device ID command is a multi-purpose command. It can be used to release the device from
the deep-power-down state, or obtain the devices electronic identification (ID) number.
To release the device from the deep-power-down state, the command is issued by driving the CS# pin low, shifting the instruction
code “ABh” and driving CS# high as shown in Figure 54. Release from deep-power-down will take the time duration of tRES1
(Section 5.8 AC Electrical Characteristics on page 25) before the device will resume normal operation and other commands are
accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the deep power-down state, the command is initiated by driving the CS# pin low
and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID bits are then shifted out on the falling edge of
SCK with most significant bit (MSB) first. The Device ID values for the S25FL1-K is listed in Section 8.6.1 Legacy Device
Identification Commands on page 60. The Device ID can be read continuously. The command is completed by driving CS# high.
When used to release the device from the deep-power-down state and obtain the Device ID, the command is the same as previously
described, and shown in Figure 55, except that after CS# is driven high it must remain high for a time duration of tRES2. After this
time duration the device will resume normal operation and other commands will be accepted. If the Release from Deep-Power-Down
/ Device ID command is issued while an Erase, Program or Write cycle is in process (when BUSY equals 1) the command is ignored
and will not have any effects on the current cycle.
Figure 54. Release from Deep-Power-Down Command Sequence
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 79 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 55. Read Electronic Signature (RES ABh) Command Sequence
10.5.3 Read Manufacturer / Device ID (90h)
The Read Manufacturer / Device ID command is an alternative to the Release from Deep-Power-Down / Device ID command that
provides both the JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer / Device ID command is very similar to the Release from Deep-Power-Down / Device ID command. The
command is initiated by driving the CS# pin low and shifting the instruction code “90h” followed by a 24-bit address (A23-A0) of
000000h. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCK with most significant bit
(MSB) first as shown in Figure 56. The Device ID values for the S25FL1-K is listed in Section 8.6.1 Legacy Device Identification
Commands on page 60. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by the
Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The command is
completed by driving CS# high.
Figure 56. READ_ID (90h) Command Sequence
10.5.4 Read JEDEC ID (9Fh)
For compatibility reasons, the S25FL1-K provides several commands to electronically determine the identity of the device. The Read
JEDEC ID command is compatible with the JEDEC standard for SPI compatible serial flash memories that was adopted in 2003.
The command is initiated by driving the CS# pin low and shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID
byte and two Device ID bytes, Memory Type (ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the falling edge of SCK with
most significant bit (MSB) first as shown in Figure 57. For memory type and capacity values refer to Section 8.6.1 Legacy Device
Identification Commands on page 60.
Figure 57. Read JEDEC ID Command Sequence
CS#
SCK
SI
SO
Phase
7654321023 10
76543210
Instruction (ABh) Dummy Device ID
CS#
SCK
SI
SO
Phase
7654321023 10
7654321076543 210
Instruction (90h) Address Manufacturer ID Device ID
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Data 1 Data N
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 80 of 90
S25FL116K/S25FL132K/S25FL164K
10.5.5 Read SFDP Register / Read Unique ID Number (5Ah)
The Read SFDP command is initiated by driving the CS# pin low and shifting the instruction code “5Ah” followed by a 24-bit address
(A23-A0) into the SI pin. Eight “dummy” clocks are also required before the SFDP register contents are shifted out on the falling
edge of the 40th SCK with most significant bit (MSB) first as shown in Figure 58. For SFDP register values and descriptions, refer to
Table 8.6.2, Serial Flash Discoverable Parameters (SFDP) on page 60.
Note: A23-A8 = 0; A7-A0 are used to define the starting byte address for the 256-byte SFDP Register.
The 5Ah command can also be used to access the Read Unique ID Number. This is a factory-set read-only 8-byte number that is
unique to each S25FL1-K device. The ID number can be used in conjunction with user software methods to help prevent copying or
cloning of a system.
Figure 58. Read SFDP Register Command Sequence
10.5.6 Er a se Sec ur ity Re gisters (44h)
The Erase Security Register command is similar to the Sector Erase command. A Write Enable command must be executed before
the device will accept the Erase Security Register Command (Status Register bit WEL must equal 1). The command is initiated by
driving the CS# pin low and shifting the instruction code “44h” followed by a 24-bit address (A23-A0) to erase one of the security
registers.
Note
62. Addresses outside the ranges in the table have undefined results.
The Erase Security Register command sequence is shown in Figure 59. The CS# pin must be driven high after the eighth bit of the
last byte has been latched. If this is not done the command will not be executed. After CS# is driven high, the self-timed Erase
Security Register operation will commence for a time duration of tSE (see Section 5.8 AC Electrical Characteristics on page 25).
While the Erase Security Register cycle is in progress, the Read Status Register command may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is
ready to accept other commands again. After the Erase Security Register cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Security Register Lock Bits (LB3:1) in the Status Register-2 can be used to OTP protect the
security registers. Once a lock bit is set to 1, the corresponding security register will be permanently locked, and an Erase Security
Register command to that register will be ignored (see Section 8.5.10 Security Register Lock Bits (LB3, LB2, LB1, LB0) on page 58).
Figure 59. Erase Security Registers Command Sequence
Address A23-16 A15-8 A7-0
Security Register-1 00h 10h xxh
Security Register-2 00h 20h xxh
Security Register-3 00h 30h xxh
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 23 1 0
7 6 5 4 3 2 1 0
Instruction Address Dummy Cycles Data 1
CS#
SCK
SI
SO
Phase
76543 21023 1 0
Instruction Address
Not Recommended for New Design
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S25FL116K/S25FL132K/S25FL164K
10.5.7 Program Security Registers (42h)
The Program Security Register command is similar to the Page Program command. It allows from one byte to 256 bytes of security
register data to be programmed at previously erased (FFh) memory locations. A Write Enable command must be executed before
the device will accept the Program Security Register Command (Status Register bit WEL= 1). The command is initiated by driving
the CS# pin low then shifting the instruction code “42h” followed by a 24-bit address (A23-A0) and at least one data byte, into the SI
pin. The CS# pin must be held low for the entire length of the command while data is being sent to the device.
Note
63. Addresses outside the ranges in the table have undefined results.
The Program Security Register command sequence is shown in Figure 60. The Security Register Lock Bits (LB3:1) in the Status
Register-2 can be used to OTP protect the security registers. Once a lock bit is set to 1, the corresponding security register will be
permanently locked, and a Program Security Register command to that register will be ignored (see Section 8.5.10 Security Register
Lock Bits (LB3, LB2, LB1, LB0) on page 58 and Section 10.2.1 Page Program (02h) on page 68 for detail descriptions).
Figure 60. Program Security Registers Command Sequence
10.5.8 R ea d Sec ur ity Re gisters (48h)
The Read Security Register command is similar to the Fast Read command and allows one or more data bytes to be sequentially
read from one of the three security registers. The command is initiated by driving the CS# pin low and then shifting the instruction
code “48h” followed by a 24-bit address (A23-A0) and eight “dummy” clocks into the SI pin. The code and address bits are latched
on the rising edge of the SCK pin. After the address is received, and following the eight dummy cycles, the data byte of the
addressed memory location will be shifted out on the SO pin at the falling edge of SCK with most significant bit (MSB) first. Locations
with address bits A23-A16 not equal to zero, have undefined data. The byte address is automatically incremented to the next byte
address after each byte of data is shifted out. Once the byte address reaches the last byte of the register (byte FFh), it will reset to
00h, the first byte of the register, and continue to increment. The command is completed by driving CS# high. The Read Security
Register command sequence is shown in Figure 61. If a Read Security Register command is issued while an Erase, Program, or
Write cycle is in process (BUSY=1), the command is ignored and will not have any effects on the current cycle. The Read Security
Register command allows clock rates from DC to a maximum of FR (see Section 5.8 AC Electrical Characteristics on page 25).
Note
64. Addresses outside the ranges in the table have undefined results.
Address A23-16 A15-8 A7-0
Security Register-1 00h 10h Byte Address
Security Register-2 00h 20h Byte Address
Security Register-3 00h 30h Byte Address
Address A23-16 A15-8 A7-0
Security Register-0 (SFDP) 00h 00h Byte Address
Security Register-1 00h 10h Byte Address
Security Register-2 00h 20h Byte Address
Security Register-3 00h 30h Byte Address
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 23 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Input Data 1 Input Data 2
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 82 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 61. Read Security Registers Command Sequence
10.6 Set Block / Pointer Protection (39h) — S25FL132K and S25FL164K
The user has a choice to enable one of two protection mechanisms: block protection or pointer protection. Only one protection
mechanism can be enabled at one time.
The Set Block / Pointer Protection (39h) is a new command (see Figure 62) and is used to determine which one of the two protection
mechanisms is enabled, and if the pointer protection mechanism is enabled, determines the pointer address. The Write Enable
command must precede the Set Block / Pointer command.
After the Set Block / Pointer Protection command is given, the value of A10 in byte 3 selects whether the block protection or the
pointer protection mechanism will be enabled. If A10 = 1, then the block protection mode is enabled. This is the default state, and the
rest of pointer values are don’t care. If A10=0, then the pointer protection is enabled, and the block protection feature is disabled.
The pointer address values A9 to A0 are don’t care.
If the pointer protection mechanism is enabled, a pointer address determines the boundary between the protected and the
unprotected regions in the memory. The format of the Set Pointer command is the 39h instruction followed by three address bytes.
For the S25FL132K, ten address bits (A21-A12) after the 39h command are used to program the nonvolatile pointer address. For
the 32M, A23 – A22 are don’t care. For the S25FL164K, eleven address bits (A22-A12) after the 39h command are used to program
the nonvolatile pointer address. For the 64M, A23 is a don’t care.
The A11 bit can be used to protect all sectors. If A11=1, then all sectors are protected, and A23 – A12 are don’t cares. If A11=0, then
the unprotected range will be determined by A22-A12 for the 64M and A21-A12 for the 32M. The area that is unprotected will be
inclusive of the 4-kB sector selected by the pointer address.
Bit 5 (Top / Bottom) of SR1 is used to determine whether the region that will be unprotected will start from the top (highest address)
or bottom (lowest address) of the memory array to the location of the pointer. If TB=0 and the 39h command is issued followed by a
24-bit address, then the 4-kB sector which includes that address and all the sectors from the bottom up (zero to higher address) will
be unprotected. If TB=1 and 39h command is issued followed by a 24-bit address then the 4-kB sector which includes that address
and all the sectors from the Top down (max to lower address) will be unprotected.
The SRP1 (SR2 [0]) and SRP0 (SR1 [7]) bits are used to protect the pointer address in the same way they protect SR1 and SR2.
When SRP1 and SRP0 protect SR1 and SR2, the 39h command is ignored. This effectively prevents changes to the protection
scheme using the existing SRP1-SRP0 mechanism – including the OTP protection option.
The 39h command is ignored during a suspend operation because the pointer address cannot be erased and re-programmed during
a suspend.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 23 1 0
7 6 5 4 3 2 1 0
Instruction Address Dummy Cycles Data 1
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 83 of 90
S25FL116K/S25FL132K/S25FL164K
The Read Status Register-3 command 33h (see Figure 31 for 33h timing diagram) reads the contents of SR3 followed by the
contents of the pointer. This allows the contents of the pointer to be read out for test and verification. The read back order is SR3,
A23-A16, A15-A8. If CS# remains low, the Bytes after A15-A8 are undefined.
Notes
65. Amax = 7FFFFFh for the FL164K, and 3FFFFFh for the FL132K.
66. A<21-12> for the FL132K.
Block Erase: In general, if the pointer protect scheme is active (A10=0), protect all sectors is not active (A11=0), and the pointer
address points to anywhere within the block, the whole block will be protected from Block Erase even though part of the block is
unprotected. The 2 exceptions where block erase goes through is if the pointer address points to the TOP sector of the
block(A[15:12]=1111) if TB=0, and if the pointer points to the BOTTOM sector of the block (A[15:12]=0000) and TB=1.
Figure 62. Set Pointer Address (39h)
TB A11 A10
Protect Address
Range
Unprotect Address
Range Comment
xx1
See Block Protect
Method
See Block Protect
Method
A10 = 1 the block protect protection mode is enabled (this is
the default state and the rest of pointer address is don't care).
000
Amax [65] to
(A<22-12>+1)
A<22-12> [66]
to 000000
If TB=0 and the 39h command is issued followed by a 24-bit
address, then the 4-kB sector which includes that address
and all the sectors from the bottom up (zero to higher
address) will be unprotected.
100
(A<22-12>-1)
to 000000
Amax [65]
to A<22-12>
If TB=1 and 39h command is issued followed by a 24-bit
address then the 4-kB sector which includes that address and
all the sectors from the Top down (max to lower address) will
be unprotected.
x10
Amax [65] to
000000 Not Applicable A10=0 and A11 =1 means protect all sectors and Amax-A12
are don't care.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 23 22 21 20 19 18 17 16 15 14 13 12 11 10 X X X X X X X X X X
Instruction Address
Dummy Cycles
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 84 of 90
S25FL116K/S25FL132K/S25FL164K
11. Data Integrity
11.1 Erase Endurance
Note
67. Each write command to a nonvolatile register causes a PE cycle on the entire nonvolatile register array. Re-writing registers with the same value doesn’t cause a PE
cycle. OTP bits in registers internally reside in a separate array that is not cycled.
11.2 Data Retention
11.3 Initial Delivery State
The device is shipped from Cypress with nonvolatile bits / default states set as follows:
The entire memory array is erased: i.e. all bits are set to 1 (each byte contains FFh).
The Unique Device ID is programmed to a random number seeded by the date and time of device test.
The SFDP Security Register address space 0 contains the values as defined in Section 8.6.2 Serial Flash Discoverable
Parameters (SFDP) on page 60. Security Register address spaces 1 to 3 are erased: i.e. all bits are set to 1 (each byte contains
FFh).
Status Register-1 contains 00h.
Status Register-2 contains 04h.
Status Register-3 contains 70h.
Erase Endurance
Parameter Min Unit
Program/Erase cycles main Flash array sector 100K PE cycle
Program/Erase cycles Security Registers nonvolatile register array [67] 1K PE cycle
Parameter Test Conditions Minimum Time Unit
Data Retention Time 10K Program/Erase Cycles 20 Years
100K Program/Erase Cycles 2 Years
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 85 of 90
S25FL116K/S25FL132K/S25FL164K
12. Ordering Information
The ordering part number is formed by a valid combination of the following:
Note
68. Halogen free definition is in accordance with IEC 61249-2-21.
S25FL1 32 K 0X M F I 01 1
Packing Type
0 = Tray
1 = Tube
3 = 13” Tape and Reel
Model Number (Additional Ordering Options)
00 = 16-lead SO package (300 mil)
01 = 8-lead SO package (208 mil) / 8-contact WSON
02 = 5 x 5 ball BGA package
03 = 4 x 6 ball BGA package (208 mil)
04 = 8-lead SO package (150 mil) / 8-contact USON (4 mm 4 mm)
Q1 = 8-lead SO package (208 mil) / 8-contact WSON
(Default quad mode enabled)
Temperature Range
I = Industrial (-40°C to +85°C)
V = Industrial Plus (-40°C to +105°C)
A = Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)
B = Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)
Package Materials[68]
F = Halogen-free, Lead (Pb)-free
H = Halogen-free, Lead (Pb)-free
Package Type
M = 8-lead / 16-lead SO package
N = 8-contact WSON/USON package
B = 24-ball 6 8 mm BGA package, 1.0 mm pitch
Speed
0X = 108 MHz
Device Technology
K = 90 nm floating gate process technology
Density
16 = 16 Mbits
32 = 32 Mbits
64 = 64 Mbits
Device Family
S25FL1
Cypress Memory 3.0 Volt-Only, Serial Peripheral Interface (SPI) Flash Memory
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 86 of 90
S25FL116K/S25FL132K/S25FL164K
Valid Combinations — Standard
Table lists standard configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
Valid Combinations for Standard Part Numbers
Base Ordering Part Number Speed Option Package and Temperature Model Number Packing Type Package Marking
FL116K 0X
MFI
01
0, 1, 3
FL116KIF01
Q1 FL116KIFQ1
04 FL116KIF4
MFV 01 FL116KVF01
04 FL116KVF4
NFI 01 FL116KIF01
Q1 FL116KIFQ1
NFV 01 FL116KVF01
BHI 02
0, 3
FL116KIH02
03 FL116KIH03
BHV 02 FL116KVH02
03 FL116KVH03
FL132K 0X
MFI
01
0, 1, 3
FL132KIF01
04 FL132KIF4
Q1 FL132KIFQ1
MFV 01 FL132KVF01
04 FL132KVF4
NFI
01 FL132KIF01
04 FL132KIF04
Q1 FL132KIFQ1
NFV 01 FL132KVF01
04 FL132KVF04
BHI 02
0, 3
FL132KIH02
03 FL132KIH03
BHV 02 FL132KVH02
03 FL132KVH03
FL164K 0X
MFI
00
0, 1, 3
FL164KIF00
01 FL164KIF01
Q1 FL164KIFQ1
MFV 00 FL164KVF00
01 FL164KVF01
NFI 01 FL164KIF01
Q1 FL164KIFQ1
NFV 01 FL164KVF01
BHI 02
0, 3
FL164KIH02
03 FL164KIH03
BHV 02 FL164KVH02
03 FL164KVH03
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 87 of 90
S25FL116K/S25FL132K/S25FL164K
Valid Combinations — Automotive Grade / AEC-Q100
The table below lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in volume. The
table will be updated as new combinations are released. Consult your local sales representative to confirm availability of specific
combinations and to check on newly released combinations.
Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products.
Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in
combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with
ISO/TS-16949 requirements.
AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949
compliance.
Valid Combinations — Automotive Grade / AEC-Q100
Base Ordering Part Number Speed Option Package and Temperature Model Number Packing Type Package Marking
FL116K 0X
MFA
01
0, 1, 3
FL116KAF01
Q1 FL116KAFQ1
04 FL116KAF4
MFB 01 FL116KBF01
04 FL116KBF4
NFA 01 FL116KAF01
Q1 FL116KAFQ1
NFB 01 FL116KBF01
BHA 02
0, 3
FL116KAH02
03 FL116KAH03
BHB 02 FL116KBH02
03 FL116KBH03
FL132K 0X
MFB 01
0, 1, 3
FL132KBF01
04 FL132KBF4
NFA
01 FL132KAF01
04 FL132KAF04
Q1 FL132KAFQ1
NFB 01 FL132KBF01
04 FL132KBF04
BHA 02
0, 3
FL132KAH02
03 FL132KAH03
BHB 02 FL132KBH02
03 FL132KBH03
FL164K 0X
MFB Q1 0, 1, 3 FL164KAFQ1
BHA 02
0, 3
FL164KAH02
03 FL164KAH03
BHB 02 FL164KBH02
03 FL164KBH03
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 88 of 90
S25FL116K/S25FL132K/S25FL164K
13. Revision History
Document History Page
Document Title: S25FL116K/S25FL132K/S25FL164K, 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/64-Mbit (8 Mbyte), 3.0 V, SPI Flash
Memory
Document Number: 002-00497
Rev. ECN No. Orig. of
Change
Submission
Date Description of Change
** ASPA 04/14/2014
Initial release
Combined S25FL116K_00_06 and S25FL132K_164K_00_05
Global: Promoted data sheet from Preliminary to Full Production
Added 125°C option
*A ASPA 10/10/2014
Migration Notes: FL Generations Comparison table: corrected Sector Erase Time (typ.)
for S25FL1-K
AC Electrical Characteristics: AC Electrical Characteristics — -40°C to +85°C/105°C at
2.7V to 3.6V table: added tRCH and tRST
Input / Output Timing: added Software Reset Input Timing figure
Physical Interface: Corrected figure: 8-Contact WSON (5 mm x 6 mm) Package
Security Register 0 — Serial Flash Discoverable Parameters
(SFDP — JEDEC JESD216B): Updated section based on revised JEDEC JESD216B
spec
Commands: Added Command Set (Reset Commands) table
Reset Commands: Added sections: Reset Commands, Software Reset Enable (66h),
Software Reset (99h)
Updated section: Continuous Read Mode Reset (FFh or FFFFh)
*B ASPA 12/04/2014
Power-Up Timing: Power-Up Timing and Voltage Levels table: corrected TPUW
Valid Combinations: Valid Combinations table: corrected FL116K Model Number and
Package Marking
*C 4891479 BWHA 09/18/2015 Updated to Cypress template.
*D 5044503 BWHA 12/18/2015
Added “USON 4 mm 4 mm” package related information in all instances across the
document.
Updated This product family has been retired and is not recommended for designs. For
new and current designs, S25FL064L supersede the S25FL1-K family. These are the
factory-recommended migration paths. Please refer to the S25FL-L Family datasheets
for specifications and ordering information.:
Updated Package Options.
Updated Physical Interface:
Updated Connection Diagrams:
Updated SOIC 8:
Updated Figure 27.
Updated SOIC 16 — S25FL164K:
Updated Figure 28.
Updated WSON 8:
Updated Figure 29.
Updated FAB024 24-Ball BGA:
Updated Figure 6.1.
Updated FAC024 24-Ball BGA Package:
Updated Figure 6.2.
Updated Physical Diagrams:
Added UNF008 — 8-Contact USON 4 mm x 4 mm.
Updated Ordering Information:
Added “Halogen-free” for “F” under “Package Materials”.
Added Note “GT grade is Cypress’s quality and reliability rating to indicate products that
are tested to meet <10 ppm and intended for high reliability applications such as
automotive.” and referred the same note in “A” under “Temperature Range”.
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 89 of 90
S25FL116K/S25FL132K/S25FL164K
*E 5270099 BWHA 06/29/2016
Added Logic Block Diagram.
Updated Electrical Characteristics:
Added Thermal Resistance.
Updated Data Integrity:
Removed “Endurance”.
Added Data Retention.
Updated Ordering Information:
Updated Valid Combinations — Automotive Grade / AEC-Q100:
Updated Table :
Added a column “Model Number”.
Added a row under “FL164K” and added “MFB” and its corresponding details.
Updated to new template.
*F 5645494 BWHA 02/28/2017
Updated Signal Descriptions:
Updated Input / Output Summary:
Update Table 1:
Updated details in “Description” column corresponding to “DNU”.
Updated Electrical Characteristics:
Updated Operating Ranges:
Updated Table 6:
Removed Extended Temperature range related information.
Updated AC Electrical Characteristics:
Updated Table 10:
Added “tCS” parameter and its details.
Updated Physical Interface:
Updated Physical Diagrams:
Updated SOA008 — 8-Lead Plastic Small Outline Package (150-mils Body Width)
(Updated Package Drawing to Cypress format).
Updated SOC008 — 8-Lead Plastic Small Outline Package (208-mils Body Width)
(Updated Package Drawing to Cypress format).
Updated SO3016 — 16-Lead Plastic Wide Outline Package (300-mils Body Width)
(Updated Package Drawing to Cypress format).
Updated WND008 — 8-Contact WSON 5 mm ´ 6 mm (Updated Package Drawing to
Cypress format).
Updated UNF008 — 8-Contact USON 4 mm x 4 mm (Updated Package Drawing to
Cypress format).
Updated FAB024 — 24-Ball Ball Grid Array (8 mm ´ 6 mm) Package (Updated Package
Drawing to Cypress format).
Updated FAC024 — 24-Ball Ball Grid Array (8 mm ´ 6 mm) Package (Updated Package
Drawing to Cypress format).
Updated Address Space Maps:
Updated Device Identification:
Updated Table 25:
Added Note 41 and referred the same note in “ABh” in “Instruction” column.
Added Note 42 and referred the same note in “90h” in “Instruction” column.
Added Note 43 and referred the same note in “9Fh” in “Instruction” column.
Document History Page (Continued)
Document Title: S25FL116K/S25FL132K/S25FL164K, 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/64-Mbit (8 Mbyte), 3.0 V, SPI Flash
Memory
Document Number: 002-00497
Rev. ECN No. Orig. of
Change
Submission
Date Description of Change
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Page 90 of 90
S25FL116K/S25FL132K/S25FL164K
*F (cont.) 5645494 BWHA 02/28/2017
Updated Commands:
Updated Table 29:
Updated details in “BYTE 2”, “BYTE 3” and “BYTE 4” columns corresponding to
“Manufacturer / Device ID” command.
Update Data Integrity:
Update Data Retention:
Removed “Data Retention Time Security Registers nonvolatile register array” parameter
and its details.
Updated Ordering Information:
Updated Valid Combinations — Automotive Grade / AEC-Q100:
Updated description.
Removed a row corresponding to “MFI” under “FL132K”.
Removed rows corresponding to “MFI”, “MFV”, “NFI” and “NFV” under “FL164K”.
Updated to new template.
*G 5709491 GNKK 04/25/2017 Updated the Cypress logo and copyright information.
*H 5742469 NFB 05/19/2017 Added “Not Recommended for New Design (NRND)” status.
*I 6228963 BWHA 07/04/2018 Updated Ordering Information section and added a note “Halogen free definition is in
accordance with IEC 61249-2-21”
Document History Page (Continued)
Document Title: S25FL116K/S25FL132K/S25FL164K, 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/64-Mbit (8 Mbyte), 3.0 V, SPI Flash
Memory
Document Number: 002-00497
Rev. ECN No. Orig. of
Change
Submission
Date Description of Change
Not Recommended for New Design
Document Number: 002-00497 Rev. *I Revised July 04, 2018 Page 91 of 91
© Cypress Semiconductor Corporation, 2014-2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
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provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation
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TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
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such as unauthorized access to or use of a Cypress product. In addition, the products described in these materials may contain design defects or errors known as errata which may cause the product
to deviate from published specifications. To the extent permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any
liability arising out of the application or use of any product or circuit described in this document. Any information provided in this document, including any sample design information or programming
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and against all claims, costs, damages, and other liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
S25FL116K/S25FL132K/S25FL164K
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Not Recommended for New Design