2SK3564
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3564
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.6 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 900 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 3
Drain current
Pulse (Note 1) IDP 9
A
Drain power dissipation (Tc = 25°C) PD 40 W
Single pulse avalanche energy
(Note 2)
EAS 408 mJ
Avalanche current IAR 3 A
Repetitive avalanche energy (Note 3) EAR 4.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 83 mH, IAR = 3.0 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC ―
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
Start of commercial production
2002-06
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA
Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current IDSS V
DS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON-resistance RDS (ON) V
GS = 10 V, ID = 1.5 A ⎯ 3.7 4.3 Ω
Forward transfer admittance ⎪Yfs⎪ V
DS = 20 V, ID = 1.5 A 0.65 2.6 ⎯ S
Input capacitance Ciss ⎯ 700 ⎯
Reverse transfer capacitance Crss ⎯ 15 ⎯
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ 75 ⎯
pF
Rise time tr ⎯ 20 ⎯
Turn-on time ton ⎯ 60 ⎯
Fall time tf ⎯ 35 ⎯
Switching time
Turn-off time toff
⎯ 125 ⎯
ns
Total gate charge Qg ⎯ 17 ⎯
Gate-source charge Qgs ⎯ 10 ⎯
Gate-drain charge Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 3 A
⎯ 7 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 3 A
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 9 A
Forward voltage (diode) VDSF I
DR = 3 A, VGS = 0 V ⎯ ⎯ −1.9
V
Reverse recovery time trr ⎯ 850 ⎯ ns
Reverse recovery charge Qrr
IDR = 3 A, VGS = 0 V,
dIDR/dt = 100 A/μs ⎯ 4.7 ⎯ μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K3564
Part No. (or abbreviation code)
RL =
133 Ω
0 V
10 V
VGS
VDD ≈ 200 V
ID = 1.5 A VOUT
50 Ω
Duty ≤ 1%, tw = 10 μs
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DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
ID – VDS
DRAIN-SOURCE VOLTAGE VDS (V)
ID – VDS
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
ID – VGS
GATE-SOURCE VOLTAGE VGS (V)
VDS – VGS
DRAIN CURRENT ID (A)
⎪Yfs⎪ – ID
DRAIN CURRENT ID (A)
RDS (ON) – ID
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (Ω)
5
4
3
2
1
0
0 10 20 30 40
VGS = 4.5 V
COMMON SOURCE
Tc = 25°C
PULSE TEST
4.75
5
5.25
8 10
5.5
6
0.01
0.01
0.1
1
10
0.1 1 10
COMMON SOURCE
VDS = 20 V
PULSE TEST
25
100
Tc = −55°C
1
0.01 0.1 1 10
5
3
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
VGS = 10 V
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
4
3
2
1
0
0 4 8 12 16 20
VGS = 4.5 V
COMMON SOURCE
Tc = 25°C
PULSE TEST
4.75
5
5.25
5.5
6
8
10
24
0
0 2 4 6 8 10
1
2
6
COMMON SOURCE
VDS = 20 V
PULSE TEST
Tc = −55°C
25
100
3
4
5
12
0
10
15
20
25
0
ID = 3 A
4 8 12 16 20
COMMON SOURCE
Tc = 25℃
PULSE TEST
0.8
1.5
5
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GATE THRESHOLD VOLTAGE
Vth (V)
CASE TEMPERATURE Tc (°C)
RDS (ON) – Tc
DRAIN-SOURCE ON-RESISTANCE
RDS (ON) ( Ω)
DRAIN-SOURCE VOLTAGE VDS (V)
IDR – VDS
DRAIN REVERSE CURRENT
I
DR (A)
CASE TEMPERATURE Tc (°C)
Vth – Tc
GATE-SOURCE VOLTAGE VGS (V)
TOTAL GATE CHARGE Qg (nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE C (pF)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS
1
0.1
10
100
1000
10000
1 10 100
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
Ciss
Coss
Crss
DRAIN POWER DISSIPATION
PD (W)
CASE TEMPERATURE Tc (°C)
PD – Tc
60
40
0
0 40 80 120 160
20
0
0.1
COMMON SOURCE
Tc = 25°C
PULSE TEST
−0.4
0.3
0.5
1
3
5
10
−0.8 −1.2 −1.6
VGS =1, 0, −1 V
10
3
160 −40 0 40 80 120 −80
20
COMMON SOURCE
PULSE TEST
16
12
8
4
0
ID = 3 A
0.8
1.5
VGS = 10 V
0
100
200
300
400
500
0
4
8
12
16
20
0 4 8 12
COMMON SOURCE
ID = 3 A
Tc = 25°C
PULSE TEST
VDD = 100 V
VDS
VGS
400200
16 20 24
0
1
2
3
4
−80 −40 0 40 80 120 160
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
5
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SAFE OPERATING AREA
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
EAS – Tch
AVALANCHE ENERGY
EAS (mJ)
rth – tw
PULSE WIDTH tw (s)
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
0.01
1
1
10
0.1
100
10 1000 100 10000
* SINGLE NONREPETITIVE PULSE Tc = 2 5 ℃
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS)
DC OPERATION
Tc = 25°C
100 μs *
1 ms *
−15 V
15 V
TEST CIRCUIT WAVEFORM
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 90 V, L = 83 mH ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
500
400
300
200
100
0
25 50 75 100 125 150
0.01
10μ
0.1
1
10
100μ 1ｍ 10ｍ100ｍ1 10
T
PDM
t
Duty = t/T
Rth (ch-c) = 3.125°C/W
Duty=0.5
0.2
0.1
SINGLE PULSE
0.05
0.02
0.01
0.001
VDSS max
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
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except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
