iy <> Ww 2N 914 Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: Schnelle Schalter Applications: Fast switches Abmessungen in mm Dimensions in mm c cy o2) fo 4 an 2 FS a] S a | o z = Hj = ~ < 4 2 Not for new developments Kollektor mit Gehause verbunden Collector connected with case Normgehduse Case 18 A3 DIN 41876 JEDEC TO 18 Gewicht - Weight max. 0,59 Absolute Grenzdaten Absolute maximum ratings Kollektor-Basis-Sperrspannung Ucso 40 Vv Collector-base voltage Kollektor-Emitter-Sperrspannung UcEO 15 Vv Collector-emitter voltage RBe = 100 UcER 20 Emitter-Basis-Sperrspannung VeBO 5 Vv Emitter-base voitage Koliektorstrom Io 500 mA Collector current Gesamiverlustleistung Total power dissipation lamb = 45C Prot 320 mw Sperrschichttemperatur fj 200 C Junction temperature Lagerungstemperaturbereich tstg ~65 ... +200 C Storage temperature range B 2/V.2.543/0875 A 1 447 2N 914 0 40 80 120 160 C amb: case > Warmewiderstande Thermal resistances; Sperrschicht-Umgebung Rina Junction ambient Sperrschicht-Gehause Rinse Junction case Statische KenngrBen DC characteristics lamb = 25C, falis nicht anders angegeben unless otherwise specified Kollektorreststrom Collector cut-off current Ucp = 20V IcBo*) Ucp = 20 V, tamb = 150C leBpo **) Uce = 20 V, Ugg = 0,25 V, famp = 125C Toev) Emitterreststrom Emitter cut-off current Upp = 4V lepo*) *) AQL = 0,65%, **) AQL = 2,5% 448 Typ. Max. 480 C/w 145 C/W 25 nA 15 pA 10 pA 100 nA 2N 914 Min. Typ. Max. Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage Ig =30mA UBRyCceEO *)') 15 v Iq = 30 MA, Rpg = 100 UpryceR') 20 Vv Emitter-Basis-Durchbruchspannung Emitter-base breakdown voltage Tg = 10 pA Upryepo*) 5 V Kollektor-Sattigungsspannung Collector saturation voltage Iq = 200 mA, Ip = 20 mA UcEsat 700 mv lo= 1... 20mA, lo= 10- Zp, lamb =-55 ...+125C UcEsat **) 250 mV Basis-Sattigungsspannung Base saturation voltage Ig = 10 mA, Ig = 1 mA UBEsat 680 800 mV Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio Ucp = 1V Ig = 10mA hee*)') 30 120 Uce =1Vi ig = 10 MA, tamp = -55C Age **)') 12 Uog = 5 Vig = 500 mA Ape) 10 Dynamische KenngrdBen AC characteristics famb = 25C Transitfrequenz Gain bandwidth product Ugg = 10 V, Ig = 20 mA, f = 100 MHz ST 300 MHz Kollektor-Basis-Kapazitat Collector-base capacitance Uop = 10V, f = 1 MHz CoBo 6 pF Emitter-Basis-Kapazitat Emitter-base capacitance Veg =0,5V, f = 1MHz CEBO 9 pF Schaltzeiten Switching characteristics Einschaltzeit Turn-on time . Iq = 200 mA, Igy = 40 mA ton) 40 ns Ausschaltzeit Turn-off time Ig = 200 mA, Igy = 40 MA, ~Zgo = 20 mA tot?) 40 ns Speicherzeit Storage time Iq = 20 mA, Igy = ~Igp = 20mA T;) 20 ns ?) siehe MeBschaltung t = = 1) Po = *) AQL = 0,65%, **) AQL = 2,5%, ') = = 0,01, tp = 0,3 ms, see test circuit 449 2N914 Rg =50Q t=tp< Ins t Pp 7 70.01 ip =O,2H8 70V Oszilloskop: Oscilloscope: _ R,= 100 kO t LL P 5 75501 MeBschaltung fir: tt Test circuit for: om off Rg = 500 7Vv 5Vv Oszilloskop: t tee Oscilloscope: frir<ins tp 100 Q 240 2 R, = 100 kQ 7 = 0.08 1kQ fp S1ns th =0,3ms - ur) 0,1 pF Pp "| 0,1 WF 215 2 Vp Ly -9 2009 MeBschaltung fir: Test circuit for: *s 75502 70241 Tt. tamb = 25 C UE 450